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PHYSICAL SOURCES of NOISE and their MODELS

"The secret to creativity is knowing how to hide your sources"

 (Albert Einstein)

General references

  1. Rumyantsev S., G Liu, W Stillman, M Shur, A A Balandin: Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. J. Phys.: Condens. Matter, Vol. 22, 2010, pp 395302 – 395302-7. DOI 10.1088/0953-8984/22/39/395302 http://ndl.ee.ucr.edu/Balandin-JPCM-Noise-G.pdf

  2. F. Bonani, S. Donati Guerrieri, G. Ghione: Noise source modeling for cyclostationary noise analysis in large-signal device operation. IEEE Trans. on ED, Vol. ED-49, no. 9, 2002, pp. 1640–1647. DOI 10.1109/TED.2002.802638

  3. Pierce J.R.: Physical Sources of Noise. Proc of the IRE, vol. 44, no. 5, 1956, pp. 601 – 608. DOI 10.1109/JRPROC.1956.275123

  4. Petritz R.L.: On the Theory of Noise in P-N Junctions and Related Devices. Proc. of the IRE, vol. 40, no. 11, pp. 1440 – 1456., Nov. 1952 DOI 10.1109/JRPROC.1952.273978

 List on:         1/f noise

Avalanche noise

Barkhausen noise

Burst noise (popcorn or RTS noise)

Diffusion noise

Electrochemical noise

Generation-Recombination noise

Quantum noise

Shot noise

Thermal noise

 

    1/f noise (Flicker noise, Excess noise or Pink noise)

  1. Leibovich N., Dechant A., Lutz E., Barkai E.: Aging Wiener-Khinchin theorem and critical exponents of 1/f b noise. Physical Review E, Vol. 94, 2016, Article # 052130. DOI 10.1103/PhysRevE.94.052130

  2. Niemann M., Barkai E., Kantz H.: Renewal Theory for a System with Internal States. Mathematical Modelling of Nat. Phenomena, Vol. 11, no. 3, 2016, pp. 191 – 239. DOI 10.1051/mmnp/201611312

  3. Grueneis F.: Extremal Properties of an Intermittent Poisson Process Generating 1/f Noise. Fluct. Noise Lett., Vol. 15, no. 4, 2016, Article # 1650028. DOI 10.1142/S0219477516500280

  4. Kumar P., Sendelbach S., Beck M.A., et al.: Origin and Reduction of 1/f Magnetic Flux Noise in Superconducting Devices. Physical Review Applied, Vol. 6, no. 4, 2016, Article # 041001. DOI 10.1103/PhysRevApplied.6.041001

  5. Ruseckas J., Kazakevicius R., Kaulakys B.: 1/f noise from point process and time-subordinated Langevin equations. Journal of Statistical Mechanics - Theory & Experiment, Vol. 2016, 2016, Article # 054022. DOI 10.1088/1742-5468/2016/05/054022

  6. Ruseckas J., Kazakevicius R., Kaulakys B.: Coupled nonlinear stochastic differential equations generating arbitrary distributed observable with 1/f noise. Journal of Statistical Mechanics - Theory & Experiment, Vol. 2016, 2016, Article # 043209. DOI 10.1088/1742-5468/2016/04/043209

  7. Kolodiy Z.A., Mandziy B.A.: Calculation of Flicker Noise Power. Automatic Control & Computer Sciences, Vol. 50, no. 1, 2016, pp. 15 – 19. DOI 10.3103/S0146411616010041

  8. Pellegrini B., Marconcini P., Macucci M., et al.: Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities. Journal of Statistical Mechanics - Theory & Experiment, Vol. 2016, 2016, Article # 054017. DOI 10.1088/1742-5468/2016/05/054017

  9. Sthal F., Devel M., Imbaud J., et al.: Study on the origin of 1/f noise in quartz resonators. Journal of Statistical Mechanics - Theory & Experiment, Vol. 2016, 2016, Article # 054025. DOI 10.1088/1742-5468/2016/05/054025

  10. Wang Lin-Lin, Peng Wu, Jiang Yu-Long: A Modified 1/f Noise Model for MOSFETs With Ultra-Thin Gate Oxide. IEEE ED Lett., Vol. 37, no. 5, 2016, pp. 537 – 540. DOI 10.1109/LED.2016.2536680

  11. Ahmed M., Butler D.P.: Bulk property of 1/f noise for piezoresistive Ni/Cr thin films in pressure sensors on flexible substrate. Microsystem Technologies – Micro & Nanosystems - Information Storage & Processing Systems, Vol. 22, no. 2, 2016, pp. 367 – 370. DOI 10.1007/s00542-014-2387-1

  12. Hsu Chih-Kai, Lin Chi-Yi, Li Wenwu, et al.: The impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistors. 2D Materials, Vol. 3, no. 4, 2016, Article # 045015. DOI 10.1088/2053-1583/3/4/045015

  13. Jozwikowski K., Jozwikowska A., Martyniuk A.: Dislocations as a Noise Source in LWIR HgCdTe Photodiodes. J. of Electronic Materials, Vol. 45, no. 10, 2016, pp. 4769 – 4781. DOI 10.1007/s11664-016-4390-z

  14. Koverda V.P., Skokov V.N.: Stochastic Synchronization in a Spatially Distributed System with 1/f Power Spectrum. Technical Physics, Vol. 61, no. 8, 2016, pp. 1135 – 1140. DOI 10.1134/S1063784216080168

  15. Ansari M.Z., Munjal S., Kumar V., et al.: Electrical conduction noise and its correlation with structural properties of Cu2ZnSnS4 thin films. Materials Research Express, Vol. 3, no. 7, 2016, Article # 076404. DOI 10.1088/2053-1591/3/7/076404

  16. Przybytek J., Fink-Finowicki J., Puzniak R., et al.: High frequency cut-off in 1/f conductivity noise of hole-doped La1-xCaxMnO3 manganite single crystals. Journal of Statistical Mechanics - Theory & Experiment, Vol. 2016, 2016, Article # 054024. DOI 10.1088/1742-5468/2016/05/054024

  17. Carla Marcello: Measure of 1/f noise using the sound card of a PC. American Journal of Physics, Vol. 84, no. 4, 2016, pp. 311 – 316. DOI 10.1119/1.4941305

  18. Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei: Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates. Chinese Physics B, Vol. 25, no. 4, 2016, Article # 046104. DOI 10.1088/1674-1056/25/046104

  19. Yi Wei, Savel'ev S.E., Medeiros-Ribeiro G., et al.: Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors. Nature Communications, Vol. 7, 2016, Article # 11142. DOI 10.1038/ncomms11142

  20. Fang Wen, Veloso A., Simoen E., et al.: Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs. IEEE ED Lett., Vol. 37, no. 4, 2016, pp. 363 – 365. DOI 10.1109/LED.2016.2530849

  21. Kumar A., Kashid R., Ghosh A., et al.: Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode. ACS Applied Materials & Interfaces, Vol. 8, no. 12, 2016, pp. 8213 – 8223. DOI 10.1021/acsami.5b12393

  22. Takeshita Shunpei, Matsuo Sadashige, Tanaka Takahiro, et al.: Anomalous behavior of 1/f noise in graphene near the charge neutrality point. Applied Physics Lett., Vol. 108, no. 10, 2016, Article # 103106. DOI 10.1063/1.4943642

  23. Khurelbaatar Z., Kil Yeon-Ho, Shim Kyu-Hwan, et al.: Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode. Superlattices and Microstructures, Vol. 91, 2016, pp. 306 – 312. DOI 10.1016/j.spmi.2016.01.029

  24. Arnold H.N., Sangwan V.K., Schmucker S.W., et al.: Reducing flicker noise in chemical vapor deposition graphene field-effect transistors. Applied Physics Lett., Vol. 108, no. 7, 2016, Article # 073108. DOI 10.1063/1.4942468

  25. Ninagawa Shigeru, Martinez Genaro J.: 1/f Noise in the Computation Process by Rule 110. Journal of Cellular Automata, Vol. 12, no. 1-2, Special no. SI, 2016, pp. 47 – 61.

  26. Sergeev V.A., Rezchikov S.E.: The Systematic Error of Measurement of the Exponent of the Frequency Dependence of the Spectrum of Low-Frequency Noise. Measurement Techniques, Vol. 58, no. 10, 2016, pp. 1160 – 1166. DOI 10.1007/s11018-015-0859-z

  27. Leibovich N., Barkai E.: Aging Wiener-Khinchin Theorem. Physical Review Lett., Vol. 115, no. 8, 2015, Article # 080602. DOI 10.1103/PhysRevLett.115.080602

  28. Rodriguez M.A.: Class of perfect 1/f noise and the low-frequency cutoff paradox. Physical Review E, Vol. 92, no. 1, 2015, Article # 012112. DOI 10.1103/PhysRevE.92.012112

  29. Grüneis F.: Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors. Fluct. Noise Lett., Vol. 14, no. 02, 2015, Article # 1550018. DOI 10.1142/S0219477515500182

  30. Sthal F., Devel M., Imbaud J., et al.: Fluctuation-dissipation theorem and 1/f noise of bulk acoustic wave cavities. Applied Physics Lett., Vol. 107, no. 10, 2015, Article # 103502. DOI 10.1063/1.4930167

  31. Fleetwood D.M.: 1/f Noise and Defects in Microelectronic Materials and Devices. IEEE Trans on Nuclear Science, Vol. 62, no. 4, 2015, pp. 1462 – 1486. DOI 10.1109/TNS.2015.2405852

  32. Qifeng Zhao, Yiqi Zhuang, Junlin Bao, Wei Hu: 1/f Noise Model for NPN Bipolar Junction Transistors Based on Radiation Effect. IEEE Trans on Nuclear Science, Vol. 62, no. 4, 2015, pp. 1682 – 1688. DOI 10.1109/TNS.2015.2456132

  33. Kayyalha M., Chen Y.P.: Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates. Applied Physics Lett., Vol. 107, no. 11, 2015, Article # 113101. DOI 10.1063/1.4930992

  34. Stolyarov M.A., Liu Guanxiong, Rumyantsev S.L., Shur, Balandin M., Alexander A.: Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors. Applied Physics Lett., Vol. 107, no. 2, 2015, Article # 023106. DOI 10.1063/1.4926872

  35. Ou J.: Determination of transconductance-to-drain-current dependent flicker noise parameters. IEEE Dallas Circuits and Systems Conf. (DCAS), 2015, pp. 1 – 4. DOI 10.1109/DCAS.2015.7356582

  36. Song Xiang-Xiang, Li Hai-Ou, You Jie, et al.: Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot. Scientific Reports, Vol. 5, 2015, Article # 8142. DOI 10.1038/srep08142

  37. Kaulakys B., Alaburda M., Ruseckas J.: 1/f noise from the nonlinear transformations of the variables. Modern Physics Lett. B, Vol. 29, no. 34, 2015, Article # 1550223. DOI 10.1142/S0217984915502231

  38. Palenskis V., Maknys K.: Nature of low-frequency noise in homogeneous semiconductors. Scientific Reports, Vol. 5, 2015, Article # 18305. DOI 10.1038/srep18305

  39. Kendal W.S., Jorgensen B.: A Scale Invariant Distribution of the Prime Numbers. Computation, Vol. 3, no. 4, 2015, pp. 528 – 540. DOI 10.3390/computation3040528

  40. Wu Hao, Li Kui, Shi Wenzhong, et al.: A wavelet-based hybrid approach to remove the flicker noise and the white noise from GPS coordinate time series. GPS Solutions, Vol. 19, no. 4, 2015, pp. 511 – 523. DOI 10.1007/s10291-014-0412-6

  41. Dechant A., Lutz E.: Wiener-Khinchin Theorem for Nonstationary Scale-Invariant Processes. Physical Review Lett., Vol. 115, no. 8, 2015, Article # 080603. DOI 10.1103/PhysRevLett.115.080603

  42. Adak O., Rosenthal E., Meisner J., et al.: Flicker Noise as a Probe of Electronic Interaction at Metal-Single Molecule Interfaces. NANO Lett., Vol. 15, no. 6, 2015, pp. 4143 – 4149. DOI 10.1021/acs.nanolett.5b01270

  43. Z. Kolodiy, S. Yatsyshyn, B. Stadnyk: Metrological Array of Cyber-Physical Systems. Part 4. Non-Invasive Diagnostics. Sensors & Transducers, Vol. 187, no. 4, 2015, pp. 108112. http://www.sensorsportal.com/HTML/DIGEST/P_2652.htm

  44. Giusi G., Aoulaiche M., Swerts J., Popovici M., Redolfi A., Simoen E., Jurczak M.: Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio3 MIM Capacitors. IEEE ED Lett., Vol. 35, no. 9, 2014, pp. 942 – 944. DOI 10.1109/LED.2014.2335771

  45. Anandan P., Nithya A., Mohankumar N.: Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps. Microelectronics Reliability, Vol. 54, no. 12, 2014, pp. 27232727. DOI 10.1016/j.microrel.2014.07.145

  46. Higashi Yusuke, Momo Nobuyuki, Sasaki Hiroki, et al.: Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model. IEEE Trans on ED, Vol. 61, no. 12, 2014, pp. 41974203.

  47. Sadegh Sanaz, Barkai Eli, Krapf Diego: 1/f noise for intermittent quantum dots exhibits non-stationarity and critical exponents. New Journal of Physics, Vol. 16, 2014, Article # 113054. DOI 10.1088/1367-2630/16/11/113054

  48. Dasgupta Avirup, Khandelwal Sourabh, Chauhan, Yogesh Singh: Compact Modeling of Flicker Noise in HEMTs. IEEE Journal of the Electron Dev. Society, Vol. 2, no. 6, 2014, pp. 174178. DOI 10.1109/JEDS.2014.2347991

  49. Rodriguez M.A.: Complete spectral scaling of time series: Towards a classification of 1/f noise. Physical Review E, Vol. 90, no. 4, 2014, Article # 042122. DOI 10.1103/PhysRevE.90.042122

  50. Ali Md Manirul, Lo Ping-Yuan, Zhang Wei-Min: Exact decoherence dynamics of 1/f noise. New Journal of Physics, Vol. 16, 2014, Article # 103010. DOI 10.1088/1367-2630/16/10/103010

  51. Kazakevicius R., Ruseckas J.: Levy flights in inhomogeneous environments and 1/f noise. Physica A - Statistical Mechanics and its Applications, Vol. 411, 2014, pp. 95103. DOI 10.1016/j.physa.2014.06.020

  52. Ruseckas J., Kaulakys B.: Scaling properties of signals as origin of 1/f noise. Journal of Statistical Mechanics - Theory & Experiment, 2014, Article # P06005. DOI 10.1088/1742-5468/2014/06/P06005

  53. Chamberlin R.V., Nasir D.M.: 1/f noise from the laws of thermodynamics for finite-size fluctuations. Physical Review E, Vol. 90, no. 1, 2014, Article # 012142. DOI 10.1103/PhysRevE.90.012142

  54. Grueneis F.: An Intermittent Poisson Process Generating 1/f Noise with Possible Application to Fluorescence Intermittency. Fluct. & Noise Lett., Vol. 13, no. 2, 2014, Article # 1450015. DOI 10.1142/S0219477514500151

  55. Liu Heng, Lhuillier E., Guyot-Sionnest P.: 1/f noise in semiconductor and metal nanocrystal solids. J. of Applied Physics, Vol. 115, no. 15, 2014, Article # 154309. DOI 10.1063/1.4871682

  56. Ye Bin, Qiu Liang: 1/f Noise in Ising Quantum Computers. Fluct. & Noise Lett., Vol. 13, no. 1, 2014, Article # 1450006. DOI 10.1142/S0219477514500060

  57. Kwon Hyuk-Jun, Kang Hongki, Jang Jaewon, et al.: Analysis of flicker noise in two-dimensional multilayer MoS2 transistors. Applied Physics Lett., Vol. 104, no. 8, 2014, Article # 083110. DOI 10.1063/1.4866785

  58. Kang Hongki, Subramanian Vivek: Measurement and analysis of 1/f noise under switched bias in organic thin film transistors. Applied Physics Lett., Vol. 104, no. 2, 2014, Article # 023301. DOI 10.1063/1.4858935

  59. Niemann M., Kantz H., Barkai E.: Fluctuations of 1/f Noise and the Low-Frequency Cutoff Paradox. Physical Review Lett., Vol. 110, 2013, Article # 140603. DOI 10.1103/PhysRevLett.110.140603

  60. E.I. Shmelev, A.V. Klyuev, A.V. Yakimov: Complexes of Spatially Multistable Defects as the Source of 1/f Noise in GaAs Devices. Fluct. Noise Lett., Vol. 12, no. 1, 2013, Article # 1350008. DOI 10.1142/S0219477513500089

  61. Rumyantsev S.L., D. Coquillat, R. Ribeiro, M. Goiran, W. Knap, M.S. Shur, A.A. Balandin, M.E. Levinshtein: The effect of a transverse magnetic field on 1/f noise in graphene. Appl. Phys. Lett., Vol. 103, 2013, Article # 173114 (4 pages). DOI 10.1063/1.4826644

  62. Cher Xuan Zhang, Xiao Shen, En Xia Zhang, Fleetwood D.M., Schrimpf R.D., Francis S.A., Roy T., Dhar S., Sei-Hyung Ryu, Pantelides S.T.: Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETs. IEEE Trans on ED, Vol. 60, no. 7, 2013, pp. 2361 – 2367. DOI 10.1109/TED.2013.2263426

  63. Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Cheng O., Po Chin Huang: Comparison of the Trap Behavior Between ZrO2 and HfO2 Gate Stack nMOSFETs by 1/f Noise and Random Telegraph Noise. IEEE ED Lett., Vol. 34, no. 2, 2013, pp. 151 – 153. DOI 10.1109/LED.2012.2226698

  64. Vandamme L.K.J.: How useful is Hooge's empirical relation. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp.1 – 6. DOI 10.1109/ICNF.2013.6578875

  65. Handel P.H., Avanaki K.N.: Dependence of 1/f noise on the distance between wires: Quantum 1/f proximity effect. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578921 http://jci2012.sciencesconf.org/conference/icnf2013/cache/export/12290.pdf

  66. Benedetti C., Paris M.G.A, Buscemi F., Bordone P.: Time-evolution of entanglement and quantum discord of bipartite systems subject to 1/fα noise. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578952

  67. Handel P.H., Tournier A.G.: Quantum 1/f noise in spintronics and the future of downscaling. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578975

  68. Jung-Kyu Lee, Sunghun Jung, Byeong-In Choe, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Chan Hyeong Park, Byung-Gook Park, Jong-Ho Lee: Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide. IEEE ED Lett., Vol. 34, no. 2, 2013, pp 244 – 246. DOI 10.1109/LED.2012.2235401

  69. Kazakov K.A.: A Case Study on the Scaling of 1/f Noise: La2/3Sr1/3MnO3 Thin Films. Journal of Applied Physics, Vol. 113, no. 9, 2013, Article # 094901. DOI 10.1063/1.4794202

  70. Mouetsi S., El Hdiy A.: Contribution to the 1/f Noise Analysis in a Bi-dimensional Electron Gas. Journal of Applied Physics, Vol. 114, no. 10, 2013, pp. 104507-1 – 104507-3. DOI 10.1063/1.4821129

  71. Z. Kolodiy, A. Kolodiy: Fluctuations of flicker type in technical and natural systems. 22nd Int. Conf on Noise Fluctuations, 2013, pp. 131. DOI 10.1109/ICNF.2013.6578927

  72. Hossain M.Z., Rumyantsev S., Shur M.S., Balandin A.A: Reduction of 1/f noise in Graphene after Electron-beam Irradiation. Applied Physics Letters, Vol. 102, no. 15, 2013, Article # 153512. DOI 10.1063/1.4802759

  73. Seongmin Kim, Patrick D. Carpenter, Rand K. Jean, Haitian Chen, Chongwu Zhou, Sanghyun Ju, David B. Janes: Role of Self-Assembled Monolayer Passivation in Electrical Transport Properties and Flicker Noise of Nanowire Transistors. ACS Nano, 2012. DOI 10.1021/nn302484c

  74. Dong Soo Kim, Seung-Man Park, Hee Chul Lee : Surface treatment method for 1/f noise suppression in reactively sputtered nickel oxide film. J. Appl. Phys. Vol. 112, no 2, 2012, pp 024501 (4 pages) DOI 10.1063/1.4736590

  75. P. Gaubert, A. Teramoto, T. Ohmi: 1/f Channel Noise at High Drain Current in MOS Transistors. Fluct. Noise Lett., Vol. 10, no. 4, 2011, pp. 431 – 445. DOI 10.1142/S0219477511000673

  76. Levinzon F. A., L.K.J. Vandamme: Comparison of 1/f Noise in JFETs and MOSFETs with Several Figures of Merit. Fluct. Noise Lett., Vol. 10, no. 4, 2011, pp. 447 – 465. DOI 10.1142/S0219477511000685

  77. Vandamme L.K.J., M. Cölle, D.M. de Leeuw, F. Verbakel: Low-Frequency Noise to Characterize Resistive Switching of Metal Oxide on Polymer Memories. Fluct. Noise Lett., Vol. 10, no. 4, 2011, pp. 497 – 514. DOI 10.1142/S0219477511000739

  78. Mihaila M.N.: Atomic vibration-induced 1/ƒ noise in sensing nanomaterials. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 61 – 64. DOI 10.1109/ICNF.2011.5994385

  79. Shmelev E.I., Klyuev A.V., Yakimov A.V.: Defects influenced by the Jahn-Teller effect as the sources of flicker noise in GaAs based devices. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 176 – 179. DOI 10.1109/ICNF.2011.5994293

  80. Rodriguez A.L., Jimenez Tejada J.A., Gonzalez M.M., Planes M.R., Varo P.L., Godoy A.: Study of 1/f and generation-recombination noise in four gate transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 283 – 286. DOI 10.1109/ICNF.2011.5994322

  81. Marinov O., Deen M.J.: Flicker noise due to variable range hopping in organic thin-film transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 287 – 290. DOI 10.1109/ICNF.2011.5994323

  82. Hossain M.Z., Shahil K.M.F., Teweldebrhan D., Balandin A.A., Rumyantsev S.L., Shur M.: Low-frequency 1/f noise in bismuth selenide Topological Insulators. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 480 – 482. DOI 10.1109/ICNF.2011.5994374

  83. Pascal F., Raoult J., Sagnes B., Hoffmann A., Haendler S., Morin G.: Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 279 – 282. DOI 10.1109/ICNF.2011.5994321

  84. Baek R. H., Baek C.-K., Choi H.-S., Lee J.-S., Yeoh Y. Y., Yeo K. H., Kim D.-W., Kim K, Kim D.-M., Jeong Y.-H.: Characterization and Modeling of 1/f Noise in Si-Nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides. IEEE Trans on Nanotechnology, Vol. 10, no. 3, 2010, pp. 417 – 423. DOI 10.1109/TNAno. 2010.2044188

  85. Grueneis F.: 1/f Noise in Extrinsic Semiconductor Materials Interpreted as Modulated Generation-Recombination Noise. Fluctuation & Noise Lett., Vol. 9, no. 2, 2010, pp. 229 – 243. DOI 10.1142/S0219477510000137

  86. Rajan Nitin K., Routenberg D. A., Chen Jin, Reed M. A.: Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors. Applied Physics Letters, vol. 97, no. 24, 2010, pp. 243501 – 243501-3. DOI 10.1063/1.3526382

  87. Sunkook Kim, Seongmin Kim, David B J., Saeed Mohammadi, Juhee Back, Moonsub Shim: DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology, Vol 21, no 38, 2010, pp 385203. DOI 10.1088/0957-4484/21/38/385203

  88. Dmitriev A.P., M.E. Levinshtein, S.L. Rumyantsev: On the Hooge relation in semiconductors and metals. J. Appl. Phys., Vol. 106, no. 2, 2009, Article # 024514. http://dx.doi.org/10.1063/1.3186620

  89. Andrei P., Kruppa W., Boos J. B., Bennett B. R.: Spatial localization of 1/f noise sources in AlSb/InAs high-electron-mobility transistors. Journal of Applied Physics, vol. 106, no. 3, 2009, pp. 034504 – 034504-7. DOI 10.1063/1.3194312

  90. Crupi F., Giusi G., Iannaccone G., Magnone P., Pace C., Simoen E., Claeys C.: Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures. Journal of Applied Physics, vol. 106, no. 7, 2009, pp. 073710 – 073710-6. DOI 10.1063/1.3236637

  91. Bertuccio G., Caccia S.: Noise Minimization of MOSFET Input Charge Amplifiers Based on Δμ and ΔN1/f Models. IEEE Trans on Nuclear Science, vol. 56, no. 3, 2009, pp. 1511 – 1520. DOI 10.1109/TNS.2008.2012347

  92. Kinch M. A., Wan C.-F., Schaake H., Chandra D.: Universal 1/f noise model for reverse biased diodes. Applied Physics Letters, vol. 94, no. 19, 2009, pp. 193508 – 193508-3. DOI 10.1063/1.3133982

  93. Izpura J.L.: On the Electrical Origin of Flicker Noise in Vacuum Devices. IEEE Trans on Instr. & Meas., Vol. 58, no 10, 2009, pp 3592 – 3601. DOI 10.1109/TIM.2009.2018692

  94. Ferdi Y., Taleb-Ahmed A., Lakehal M.R.: Efficient Generation of 1/fβ Noise Using Signal Modeling Techniques. IEEE Trans on CAS I: Regular Papers, vol. 55, no. 6, 2008, pp. 1704 – 1710. DOI 10.1109/TCSI.2008.918173

  95. Crupi F., Magnone P., Iannaccone G., Giusi G., Pace C., Simoen E., Claeys C.: Modeling the gate current 1/f noise and its application to advanced CMOS devices. 9th Int. Conf on Solid-State and Integrated-Circuit Technology (ICSICT 2008), 2008, pp. 420 – 423. DOI 10.1109/ICSICT.2008.4734564

  96. Magnone P., Crupi F., Iannaccone G., Giusi G., Pace C., Simoen E., Claeys C.: A model for MOS gate stack quality evaluation based on the gate current 1/f noise. 9th Int. Conf on Ultimate Integration of Silicon (ULIS 2008), 2008, pp. 141 – 144. DOI 10.1109/ULIS.2008.4527159

  97. Izpura J.-L.: 1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance. IEEE Trans on Instr. & Meas., Vol. 57, no 3, 2008, pp 509 – 517. DOI 10.1109/TIM.2007.911642

  98. Raoult J., Pascal F., Delseny C., Marin M., Deen M. J.: Impact of carbon concentration on 1/f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors. Journal of Applied Physics, vol. 103, no. 11, 2008, pp. 114508 – 114508-10. DOI 10.1063/1.2939252

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    Avalanche noise

  1. Craig A.P., Reyner C.J., Marshall A.R.J., Huffaker D.L.: Excess Noise in GaAs and AlGaAs Avalanche Photodiodes with GaSb Absorption Regions-Composite Structures Grown Using Interfacial Misfit Arrays. Applied Physics Letters, Vol. 104, no. 21, 2014, Article # 213502. DOI 10.1063/1.4879848

  2. Akbari M.H., Jalali M.: Noise Equivalent Circuit Model of Thin Avalanche Photodiodes. IEEE ED Lett., Vol. 35, no. 6, 2014, pp. 648 – 650. DOI 10.1109/LED.2014.2319207

  3. Pancheri L., Dalla Betta G.-F., Stoppa D.: Low-Noise Avalanche Photodiode With Graded Junction in 0.15-mu m CMOS Technology. IEEE ED Lett., Vol. 35, no. 5, 2014, pp. 566 – 568. DOI 10.1109/LED.2014.2312751

  4. Rubel O., Darbandi A.: First-Principle Prediction of Single-carrier Avalanche Multiplication in Chalcopyrite Semiconductors. Journal of Applied Physics, Vol. 113, no. 20, 2013, pp 203104.1 – 203104.7. DOI 10.1063/1.4807650

  5. Scarcella C., Tosi A., Villa F., Tisa S., Zappa F.: Low-Noise Low-Jitter 32-pixels CMOS Single-Photon Avalanche Diodes Array for Single-Photon Counting from 300 nm to 900 nm. Review of Scientific Instruments, Vol. 84, no. 2, 2013, pp. 123112.1 – 123112.5. DOI 10.1063/1.4850677

  6. Vilella E., Dieguez A.: Readout Schemes for Low Noise Single-Photon Avalanche Diodes Fabricated in Conventional HV-CMOS Technologies. Microelectronics J., Vol. 44, no. 10, Special no. SI, 2013, pp. 941 – 947. DOI 10.1016/j.mejo.2013.01.008

  7. Lee K., Lee B., Yoon S., Hong J.-ho, Yang K.: A Low Noise Planar-Type Avalanche Photodiode Using a Single-Diffusion Process in Geiger-Mode Operation. Japanese Journal of Applied Physics, Vol. 52, no. 7, 2013, Article # UNSP 072201, Part: 1. DOI 10.7567/JJAP.52.072201

  8. Huang Jun, Banerjee K., Ghosh S., Hayat M.: Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes. IEEE Trans on ED, Vol. 60, no. 7, 2013, pp. 2296 – 2301. DOI 10.1109/TED.2013.2264315

  9. Hsu Fang-Ze, Wu Jau-Yang, Lin Sheng-Di: Low-Noise Single-Photon Avalanche Diodes in 0.25 mu m High-Voltage CMOS Technology. Optics Lett., Vol. 38, no. 1, 2013, pp. 55 – 57.

  10. Dandin M., Abshire P.: High Signal-to-Noise Ratio Avalanche Photodiodes With Perimeter Field Gate and Active Readout. IEEE ED Lett., Vol. 33, no. 4, 2012, pp. 570 – 572. DOI 10.1109/LED.2012.2186112

  11. Tan Chee Hing, Xie Shiyu, Xie Jingjing: Low Noise Avalanche Photodiodes Incorporating a 40 nm AlAsSb Avalanche Region. IEEE Journal of Quantum Electronics, Vol. 48, no. 1, 2012, pp. 36 – 41. DOI 10.1109/JQE.2011.2176105

  12. Yang Yongfeng, Wu Yibao, Farrell R., Dokhale P. A ., Shah K.S. , Cherry S.R.: Signal and Noise Properties of Position-Sensitive Avalanche Photodiodes. Physics in Medicine and Biology, Vol. 56, no. 19, 2011, pp. 6327 – 6336. DOI 10.1088/0031-9155/56/19/011

  13. Marshall A.R.J., Vines P., Ker Pin Jern, David J.P.R, Tan Chee Hing: Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE Journal of Quantum Electronics, Vol. 47, no. 6, 2011, pp. 858 – 864. DOI 10.1109/JQE.2011.2128299

  14. Namekata N, Adachi S, Inoue S.: Ultra-Low-Noise Sinusoidally Gated Avalanche Photodiode for High-Speed Single-Photon Detection at Telecommunication Wavelengths. IEEE Photonics Technology Letters, Vol. 22, no 8, 2010, pp 529 – 531. DOI 10.1109/LPT.2010.2042054

  15. Pan A., Pan Dee-Son, Chui Chi On: Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon. Applied Physics Letters, Vol. 96, no 26, 2010, pp 263503 – 263503-3. DOI 10.1063/1.3457468

  16. Khunkhao S, Umjaruan C, Thaworn A, Nuanloy S, Niemcharoen S, Ruangphanit A, Phongphanchanthra N, Sato K.: Shot noise behavior of planar Mo/n-Si/Mo photodetector structure in avalanche mode. 2010 Int. Conf. on Electrical Eng. / Electronics Computer Telecom. & Information Technology (ECTI-CON), 2010, pp 1137 – 1141. Print ISBN: 978-1-4244-5606-2

  17. J. S. Marsland: Resonance effects on gain and noise in avalanche photodiodes. J Mater Sci: Mater Electron, Vol 20, 2009, pp S514–S518. http://www.springerlink.com/content/r606114wq43223rl/

  18. Mun S. C. Liew Tat, Tan C.H, Goh Y.L, Marshall A.R.J, David J.P.R.: Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. Journal of Applied Physics, Vol. 104, no 1, 2008, pp 013114 – 013114-6. DOI 10.1063/1.2952003

  19. You A.H, Tan S.L, Lim T.L, Cheang P.L.: Multiplication gain and excess noise factor in double heterojunction avalanche photodiodes. IEEE Int. Conf. on Semiconductor Electronics (ICSE 2008), 2008, pp 259 – 262. DOI 10.1109/SMELEC.2008.4770319

  20. Tan L.J.J, Ng J.S, Tan C.H, David J.P.R.: Avalanche Noise Characteristics in Submicron InP Diodes. IEEE Journal of Quantum Electronics, Vol. 44, no 4, 2008, pp 378 – 382. DOI 10.1109/JQE.2007.914771

  21. Celasco E., Celasco M., Eggenhoffner R.: Crackling noise peaks as signature of avalanche correlation. Journal of Applied Physics, Vol. 101, no 5, 2007, pp 054908 – 054908-5. DOI 10.1063/1.2472654

  22. Tan C.H, Goh Y.L, Marshall A.R.J, Tan L.J.J, Ng J.S, David J.P.R.: Extremely low excess noise InAlAs avalanche photodiodes. IEEE 19th Int. Conf. on Indium Phosphide & Related Materials (IPRM '07), 2007, pp 81 – 83. DOI 10.1109/ICIPRM.2007.381127

  23. You A.H, Low L.C, Cheang P.L.: Avalanche Multiplication and Excess Noise Factor of Heterojunction Avalanche Photodiodes. IEEE Int. Conf. on Semiconductor Electronics (ICSE '06), 2006, pp 324 – 328. DOI 10.1109/SMELEC.2006.381074

  24. Groves C, Chia C.K, Tozer R.C, David J.P.R, Rees G.J.: Avalanche noise characteristics of single AlxGa1-xAs(0.3<0.6)-GaAs heterojunction APDs. IEEE Journal of Quantum Electronics, Vol. 41, no 1, 2005, pp 70 – 75. DOI 10.1109/JQE.2004.838530(410) 41

  25. Reklaitis A., Reggiani L.: Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes. Journal of Applied Physics, Vol. 97, no 4, 2005, pp 043709 – 043709-8. DOI 10.1063/1.1853498

  26. Goh Y.L, Tan C.H, Ng J.S, Ng W.K, David J.P.R.: Avalanche noise in In0.53Ga0.47As avalanching regions. Int. Conf. on Indium Phosphide and Related Materials, 2005, pp 428 – 431. DOI 10.1109/ICIPRM.2005.1517521

  27. Paasschens J.C.J, de Kort R.: Modelling the excess noise due to avalanche multiplication in (hetero-junction) bipolar transistors. Proc. of the 2004 Meeting Bipolar/BiCMOS Circuits & Technology, 2004, pp 108 – 111. DOI 10.1109/BIPOL.2004.1365757

  28. Groves C, David J. P. R, Rees G. J, Ong D. S.: Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes. Journal of Applied Physics, Vol. 95, no 11, 2004, pp 6245 – 6251. DOI 10.1063/1.1719269

  29. Schneider H.: Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors. Applied Physics Letters, Vol. 82, no 24, 2003, pp 4376 – 4378. DOI 10.1063/1.1585134

  30. David J.: Low noise avalanche photodiodes. Optical Fiber Comm. Conf. (OFC 2003), Vol. 1, 2003, pp 336 – 337. DOI 10.1109/OFC.2003.1248112

  31. Ng B.K, Yan F, David J.P.R, Tozer R.C, Rees G.J, Qin C, Zhao J.H.: Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photonics Technology Letters, Vol. 14, no 9, 2002, pp 1342 – 1344. DOI 10.1109/LPT.2002.801112

  32. Satyanadh G, Joshi R. P, Abedin N, Singh U.: Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs. Journal of Applied Physics, Vol. 91, no 3, 2002, pp 1331 – 1338. DOI 10.1063/1.1429771

  33. Marinov O., Deen M. J., Loukanov V., Velikov V.: Low frequency noise of reverse biased rectifier diodes in the avalanche breakdown regime. Journal of Applied Physics, vol. 91, no. 11, 2002, pp. 9232 – 9240. DOI 10.1063/1.1470252

  34. Neng-Fu Shih: Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiodes. Trans. on ED, Vol. 48, no 6, 2001, pp 1075 – 1081. DOI 10.1109/16.925229

  35. Saleh M.A, Hayat M.M, Sotirelis P.P, Holmes A.L, Campbell J.C, Saleh B.E.A, Teich M.C.: Impact-ionization and noise characteristics of thin III-V avalanche photodiodes. Trans. on ED, Vol. 48, no 12, 2001, pp 2722 – 2731. DOI 10.1109/16.974696

  36. David J.P.R, Rees G.J.: Low noise avalanche photodiodes. The 14th Annual Meeting of IEEE Lasers and Electro-Optics Society (LEOS 2001), Vol. 2, 2001, pp 693 – 694. DOI 10.1109/LEOS.2001.969003

  37. Li K.F., Ong D., David J., Tozer R., Rees G., Plimmer S.A.; Chang K.Y.; Roberts J.S.: Avalanche Noise Characteristics of Thin GaAs Structures with Distributed Carrier Concentration. IEEE Trans on ED, vol. 47, no. 5, 2000, pp 910 – 914. DOI 10.1109/16.841220

  38. Ng B.K, David J.P.R, Tozer R.C, Rees G.J, Tan C.H, Plimmer S.A, Hopkinson M.: Low avalanche noise behaviour in bulk Al0.8Ga0.2 As. IEEE Int. Symp. on Compound Semiconductors, 2000, pp 519 – 523. DOI 10.1109/ISCS.2000.947209

  39. Tan C. H, Clark J. C, David J. P. R, Rees G. J, Plimmer S. A, Tozer R. C, Herbert D. C, Robbins D. J, Leong W. Y, Newey J.: Avalanche noise measurement in thin Si p+-i-n+ diodes. Applied Physics Letters, Vol. 76, no 26, 2000, pp 3926 – 3928. DOI 10.1063/1.126823

  40. Li K.F, Ong D.S, David J.P.R, Tozer R.C, Rees G.J, Plimmer S.A, Chang K.Y, Roberts J.S.: Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs]. Trans. on ED, Vol. 47, no 5, pp 910 – 914., 2000 DOI 10.1109/16.841220

  41. Li K.F, Ong D.S, David J.P.R, Tozer R.C, Rees G.J, Robson P.N, Grey R.: Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors. IEE Proc. J - Optoelectronics, Vol. 146, no 1, 1999, pp 21 – 24. DOI 10.1049/ip-opt:19990453

  42. Plimmer S. A, Tan C. H, David J. P. R, Grey R, Li K. F, Rees G. J.: The effect of an electric-field gradient on avalanche noise. Applied Physics Letters, Vol. 75, no 19, 1999, pp 2963 – 2965. DOI 10.1063/1.125202

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  44. Li K.F, Plimmer S.A, David J.P.R, Tozer R.C, Rees G.J, Robson P.N, Button C.C, Clark J.C.: Low avalanche noise characteristics in thin InP p+-i-n + diodes with electron initiated multiplication. IEEE Photonics Technology Letters, Vol. 11, no 3, 1999, pp 364 – 366. DOI 10.1109/68.748237

  45. Li K.F, Ong D.S, David J.P.R, Tozer R.C, Rees G.J, Robson P.N, Grey R.: Low excess noise characteristics in thin avalanche region GaAs diodes. Electronics Letters, Vol. 34, no 1, 1998, pp 125 – 126. DOI 10.1049/el:19980021

  46. Li K.F, Ong D.S, David J.P.R, Rees G.J, Tozer R.C, Robson P.N, Grey R.: Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes. Trans. on ED, Vol. 45, no 10, 1998, pp 2102 – 2107. DOI 10.1109/16.725242

  47. Ong D. S, Li K. F, Rees G. J, David J. P. R, Robson P. N, Dunn G. M.: Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes. Applied Physics Letters, Vol. 72, no 2, 1998, pp 232 – 234. DOI 10.1063/1.120695

  48. Ong D. S, Li K. F, Rees G. J, David J. P. R, Robson P. N.: A simple model to determine multiplication and noise in avalanche photodiodes. Journal of Applied Physics, Vol. 83, no 6, 1998, pp 3426 – 3428. DOI 10.1063/1.367111

  49. Kim Jungsang, Yamamoto Yoshihisa, Hogue H. H.: Noise-free avalanche multiplication in Si solid state photomultipliers. Applied Physics Letters, Vol. 70, no 21, 1997, pp 2852 – 2854. DOI 10.1063/1.119022

  50. Herbert D.C.: Avalanche noise in submicrometre pin diodes. Electronics Letters, Vol. 33, no 14, 1997, pp 1257 – 1258. DOI 10.1049/el:19970828

  51. Hu C, Anselm K.A, Streetman B.G, Campbell J.C.: Noise characteristics of thin multiplication region GaAs avalanche photodiodes. Applied Physics Letters, Vol. 69, no 24, 1996, pp 3734 – 3736. DOI 10.1063/1.117205

  52. Chakrabarti P, Chowdhury S.C, Pal B.B.: Noise characteristics of a new heterojunction avalanche photodiode. IEE Proc. J - Optoelectronics, Vol. 137, no 2, 1990, pp 97 – 100. ISSN : 0267-3932

  53. Marsland J. S.: On the effect of ionization dead spaces on avalanche multiplication and noise for uniform electric fields. Journal of Applied Physics, Vol. 67, no 4, 1990, pp 1929 – 1933. DOI 10.1063/1.345596

  54. Peransin J.M, Rigaud D, Alabedra R.: Avalanche noise associated with gate current of Si JFET. Electronics Letters, Vol. 23, no 18, 1987, pp 970 – 971. DOI 10.1049/el:19870682

  55. Teich M, Matsuo K, Saleh B.: Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes. IEEE J. of Quantum Electronics, Vol. 22, no 8, 1986, pp 1184 – 1193. DOI 10.1109/JQE.1986.1073137

  56. Brain M.C.: Absolute noise characterisation of avalanche photodiodes. Electronics Letters, Vol. 14, no 15, 1978, pp 485 – 487. DOI 10.1049/el:19780326

  57. Nishida Katsuhiko: Avalanche-noise dependence on avalanche-photodiode structures. Electronics Letters, Vol. 13, no 14, 1977, pp 419 – 421. DOI 10.1049/el:19770305

  58. Tsironis C, Beneking H.: Avalanche noise in GaAs MESFETs. Electronics Letters, Vol. 13, no 15, 1977, pp 438 – 439. DOI 10.1049/el:19770317

  59. Statz H, Pucel R.A, Simpson J.E, Haus H.A.: Noise in gallium arsenide avalanche Read diodes. Trans. on ED, Vol. 23, no 9, 1976, pp 1075 – 1085. DOI 10.1109/T-ED.1976.18539

  60. Vlaardingerbroek M.T.: On the signal dependence of avalanche noise generation. Trans. on ED, Vol. 22, no 6, 1975, pp 309 – 313. DOI 10.1109/T-ED.1975.18128

  61. Giblin R.A, Scherer E.F, Wierich R.L.: Computer simulation of instability and noise in high-power avalanche devices. Trans on ED, Vol. 20, no 4, 1973, pp 404 – 418. DOI 10.1109/T-ED.1973.17663

  62. Naqvi I.M.: Experimental observation of the dependence of avalanche noise on carrier ionization coefficients. Proc. of the IEEE, Vol. 60, no 12, 1972, pp 1555 – 1556. DOI 10.1109/PROC.1972.8956

  63. Wierich R.L.: Computer simulation of avalanche noise. Electronics Letters, Vol. 8, no 3, 1972, pp 58 – 59. DOI 10.1049/el:19720042

  64. Haitz R. H, Voltmer F. W.: Noise of a Self‐Sustaining Avalanche Discharge in Silicon: Studies at Microwave Frequencies. Journal of Applied Physics, Vol. 39, no 7, 1968, pp 3379 – 3384. DOI 10.1063/1.1656784

  65. Gummel H.K, Blue J.L.: A small-signal theory of avalanche noise in IMPATT diodes. Trans on ED, Vol. 14, no 9, 1967, pp 569 – 580. DOI 10.1109/T-ED.1967.16005

  66. Haitz R. H.: Noise of a Self‐Sustaining Avalanche Discharge in Silicon: Low‐Frequency Noise Studies. Journal of Applied Physics, Vol. 38, no 7, 1967, pp 2935 – 2946. DOI 10.1063/1.1710027

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    Barkhausen noise

  1. Jozef Paľa, Jan Bydžovskż: An Alternative Method to Remove Excitation Field Interference from Magnetic Barkhause Noise. Journal of Magnetism and Magnetic Materials, Vol. 361, 2014, pp. 88 – 93. DOI 10.1016/j.jmmm.2014.02.093

  2. Blaow M.M., Shaw B.A.: Magnetic Barkhausen Noise Profile Analysis: Effect of Excitation Field Strength and Detection Coil Sensitivity in Case Carburized Steel. Materials Science and Appl., Vol. 5, 2014, pp. 258 – 266. DOI 10.4236/msa.2014.55030

  3. Zerovnik P., Fefer D., Grum J.: Surface Integrity Characterization Based on Time-Delay of the Magnetic Barkhausen Noise Voltage Signal. Strojniski Vestnik-Journal of Mechanical Eng., Vol. 60, no. 1, 2014, pp. 21 – 28. http://www.sv-jme.eu/data/upload/2014/01/03_2012_906_Zerovnik_02.pdf

  4. Drehmer A., Gunther G., Missell F.P.: Case Depth in SAE Steel Using Barkhausen Noise. Materials Research, Vol. 16, no. 5, 2013, pp. 1015 – 1019. http://dx.doi.org/10.1590/S1516-14392013005000095

  5. Ping Wang, Lei Zhu, Qiujun Zhu, Xiaoli Ji, Haitao Wang, Guiyun Tian, Entao Yao:
    An Application of Back Propagation Neural Network for the Steel Stress Detection Based on Barkhausen Noise Theory. NDT & E International, Vol. 55, 2013, pp. 9 – 14. DOI 10.1016/j.ndteint.2013.01.007

  6. Khan S., Cohen D.: Note: Magnetic noise from the inner wall of a magnetically shielded room.  Review of Scientific Instruments, Vol. 84, no. 5, 2013, pp. 056101-1 056101-3. DOI 10.1063/1.4802845

  7. Pal'a J., Bydzovsky J., Stoyka V., Kovac F.: Stabilization of the Barkhausen Noise Parameters. IEEE Trans on Magnetics, vol. 46, no. 2, 2010, pp. 207 – 209. DOI 10.1109/TMAG.2009.2034019

  8. Bukki-Deme A., Szabo I.A.: Magnetization Rate Dependence of the Barkhausen Noise in JRQ Steels. IEEE Trans on Magnetics, vol. 46, no. 2, 2010, pp. 254 – 257. DOI 10.1109/TMAG.2009.2032147

  9. Stupakov O., Perevertov O., Stoyka V., Wood R.: Correlation Between Hysteresis and Barkhausen Noise Parameters of Electrical Steels. IEEE Trans on Magnetics, vol. 46, no. 2, pp. 517 – 520., 2010 DOI 10.1109/TMAG.2009.2030415

  10. Baiotto R., Gerhardt G., Fukuhara M., Yonamine T., Missell F.P.: Barkhausen Noise and Magnetic Properties of Plastically Deformed Silicon Steels. IEEE Trans on Magnetics, vol. 46, no. 2, 2010, pp. 294 – 297. DOI 10.1109/TMAG.2009.2032859

  11. Hoon Song, Park D.G., Cho N.Z.: Barkhausen Noise in Ion Implanted Amorphous Ribbon. IEEE Trans on Magnetics, vol. 46, no. 2, 2010, pp. 525 – 528. DOI 10.1109/TMAG.2009.2032835

  12. Zerovnik P., Grum J., Zerovnik G.: Determination of Hardness and Residual-Stress Variations in Hardened Surface Layers With Magnetic Barkhausen Noise. IEEE Trans on Magnetics, vol. 46, no. 3, 2010, pp. 899 – 904. DOI 10.1109/TMAG.2009.2032417

  13. Soto M., Martinez-de-Guerenu A., Gurruchaga K., Arizti F.: A Completely Configurable Digital System for Simultaneous Measurements of Hysteresis Loops and Barkhausen Noise. IEEE Trans on Instrum. & Meas., vol. 58, no. 5, pp. 1746 – 1755., 2009 DOI 10.1109/TIM.2009.2014510

  14. Sablik M.J., Augustyniak B., de Campos M.F., Landgraf F.: Modeling of Effect of Plastic Deformation on Barkhausen Noise and Magnetoacoustic Emission in Iron With 2% Silicon. IEEE Trans on Magnetics, vol. 44, no. 11, 2008, pp. 3221 – 3224. DOI 10.1109/TMAG.2008.2002803

  15. Pinotti E., Zani M., Puppin E.: Magneto-optical measurement of Barkhausen noise spectra. Review of Scientific Instruments, vol. 76, no. 11 2005, pp. 113906 – 113906-4., DOI 10.1063/1.2134232

  16. Blaow M.M., Evans J.T., Shaw B.A.: Magnetic Barkhausen Noise: The Influence of Microstructure and Deformation in Bending. Acta Materialia, Vol. 53, 2005, pp. 279 – 287. http://dx.doi.org/10.1016/j.actamat.2004.09.021

  17. Yamaguchi K., Tanaka S., Watanabe H., Nittono O., Takagi T., Yamada K.: Monte Carlo simulation for Barkhausen noise. IEEE Trans on Magnetics, vol. 40, no. 2, 2004, pp. 884 – 887. DOI 10.1109/TMAG.2004.824589

  18. Flammini A., Marioli D., Sardini E., Taroni A.: Robust estimation of magnetic Barkhausen noise based on a numerical approach. IEEE Trans on Instrum. & Meas., vol. 51, no. 6, 2002, pp. 1283 – 1288. DOI 10.1109/TIM.2002.807988

  19. Tsuchida Y., Ando T., Enokizono M.: Stress evaluation of steel plates by chaos of Barkhausen noise. IEEE Trans on Magnetics, vol. 38, no. 5, 2002, pp. 3210 – 3212. DOI 10.1109/TMAG.2002.802417

  20. Arnold C. S., McKinstry K. D.: Detection and quantification of Barkhausen noise in magnetoresistive read heads. Journal of Applied Physics, vol. 91, no. 10, 2002, pp. 7282 – 7284. DOI 10.1063/1.1452678

  21. Hamaguchi Takehiko, Ichihara Takayuki, Ohtsu Takayoshi: Analysis of Barkhausen noise failure caused by ESD in a GMR head. Electrical Overstress/Electrostatic Discharge Symp. (EOS/ESD '02), 2002, pp. 119 – 122. Print ISBN: 978-1-5853-7040-5

  22. Vaidyanathan S., Moorthy V., Jayakumar T., Raj B.: Evaluation of Induction Hardened Case Depth through Microstructural Characterization Using Magnetic Barkhausen Emission Techniques. Materials Science & Technology, Vol. 16, no. 2, 2000, pp. 202 – 208. http://dx.doi.org/10.1179/026708300101507550

  23. Enokizono M., Todaka T., Yoshitomi Y.: Chaotic behavior of Barkhausen noise induced in silicon steel sheets. IEEE Trans on Magnetics, vol. 35, no. 5, 1999, pp. 3421 – 3423. DOI 10.1109/20.800544

  24. Saquet O., Chicois J., Vincent A.: Barkhausen Noise from Plain Carbon Steel: Analysis of the Influence of Microstructure. Materials Science & Eng.: A, Vol. 269, no. 1-2, 1999, pp. 73 – 82.

  25. Sablik M. J., Smith Marina Q., Waldhart C. J., McKee D. A., Augustyniak B.: The effects of biaxial stress on Barkhausen noise signals when the magnetic field is noncoaxial with the stress axes. Journal of Applied Physics, vol. 84, no. 11, pp. 6239 – 6249., 1998 DOI 10.1063/1.368943

  26. How H., Sun L., Vittoria C.: Modeling of Barkhausen noise in magnetic core material: Application of Preisach model. Journal of Applied Physics, vol. 81, no. 8, pp. 5594 – 5596., 1997 DOI 10.1063/1.364610

  27. Birsan M., Szpunar J. A., Krause T. W., Atherton D. L.: Correlation between the Barkhausen noise power and the total power losses in 3% Si–Fe. Journal of Applied Physics, vol. 79, no. 8, 1996, pp. 6042 – 6044. DOI 10.1063/1.362084

  28. Birsan M., Szpunar J.A., Krause T.W., Atherton D.L.: Magnetic Barkhausen noise study of domain wall dynamics in grain oriented 3% Si-Fe. IEEE Trans on Magnetics, vol. 32, no. 2, 1996, pp. 527 – 534. DOI 10.1109/20.486543

  29. Farrell G.P., Hill E.W.: The limit of fluxgate sensitivity due to Barkhausen noise for single layer and bi-layer permalloy thin film cores. IEEE Trans on Magnetics, vol. 31, no. 6, 1995, pp. 4050 – 4052. DOI 10.1109/20.489858

  30. Paperno E., Kaplan B.-Z.: Suppression of Barkhausen noise in magnetoresistive sensors employing AC bias. IEEE Trans on Magnetics, vol. 31, no. 6, 1995, pp. 3161 – 3163. DOI 10.1109/20.490314

  31. Sipahi L.B.: Influence of DC bias field, excitation and detection frequencies on magnetic Barkhausen noise analysis. IEEE Trans on Magnetics, vol. 30, no. 6, 1994, pp. 4590 – 4592. DOI 10.1109/20.334158

  32. Sipahi L.B.: Effects of creep damage, shot peening, and case hardening on magnetic Barkhausen noise analysis. IEEE Trans on Magnetics, vol. 30, no. 6, 1994, pp. 4830 – 4832. DOI 10.1109/20.334236

  33. Sablik M. J.: A model for the Barkhausen noise power as a function of applied field and stress (abstract). Journal of Applied Physics, vol. 75, no. 10, 1994, pp. 6769 DOI 10.1063/1.356824

  34. Koomatsubara M., Porteseil J.L., Nakamura H.: Comparison of Barkhausen noise power between soft ferrites and silicon steels. IEEE Trans on Magnetics, vol. 24, no. 2, pp. 1704 – 1706., 1988 DOI 10.1109/20.11576

  35. Tsang C., Decker S. K.: The origin of Barkhausen noise in small permalloy magnetoresistive sensors. Journal of Applied Physics, vol. 52, no. 3, 1981, pp. 2465 – 2467. DOI 10.1063/1.328968

  36. Baldwin J. A., Milstein F.: Barkhausen noise power versus size of a minor hysteresis loop. Journal of Applied Physics, vol. 44, no. 10, 1973, pp. 4739 – 4742. DOI 10.1063/1.1662028

  37. Baldwin J. A., Pickles G. M.: Power spectrum of Barkhausen noise in simple materials. Journal of Applied Physics, vol. 43, no. 11, 1972, pp. 4746 – 4749. DOI 10.1063/1.1661000

  38. Baldwin J. A., Pickles G. M.: Autocorrelation Function of Barkhausen Noise in Simple Materials. Journal of Applied Physics, vol. 43, no. 3, 1972, pp. 1263 – 1268. DOI 10.1063/1.1661248

  39. Krumhansl J. A., Bever R. T.: Barkhausen Noise and Magnetic Amplifiers: Part I-Theory of Magnetic Amplifiers. J. Appl. Phys., Vol. 20, May, 1949, pp. 432 – 436. DOI 10.1063/1.1698399

  40. Krumhansl J. A., Bever R. T.: Barkhausen Noise and Magnetic Amplifiers: Part II-Analysis of the Noise. J. Appl. Phys., Vol. 20, June, 1949, pp. 582 – 586. DOI 10.1063/1.1698430

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Burst noise (Popcorn noise, impulse noise, RTS noise or RTN)

  1. Zhijuan Tu, Zhiping Zhou, Xingjun Wang: Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 20, no. 4, 2014, pp.1 – 6. DOI 10.1109/JSTQE.2013.2288291

  2. Chung Hyun-Jong, Woo Uhm Tae, Won Kim Sung, Gyu You Young, Wook Lee Sang, Ho Jhang Sung, Campbell E.B., Woo Park Yung: Random Telegraph Noise in Metallic Single-Walled Carbon Nanotubes. Applied Physics Letters, Vol. 104, no. 19, 2014, pp. 193102 – 193102-4. DOI 10.1063/1.4876443

  3. Endean D.E., Weigelt C.T., Victora R.H., Dan Dahlberg E.: Tunable Random Telegraph Noise in Individual Square Permalloy Dots. Applied Physics Letters, Vol. 104, no. 25, 2014, pp.252408.1 – 252408.5. DOI 10.1063/1.4884818

  4. Raghavan N., Degraeve R., Fantini A, Goux L., Strangio S., Govoreanu B., Wouters D.J., Groeseneken G., Jurczak M.: Microscopic Origin of Random Telegraph Noise Fluctuations in Aggressively Scaled RRAM and its Impact on Read Disturb Variability. IEEE Int. Reliability Physics Symp. (IRPS), 2013, pp. 5E.3.1 – 5E.3.7. DOI 10.1109/IRPS.2013.6532042

  5. Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Cheng O., Po Chin Huang: Comparison of the Trap Behavior Between ZrO2 and HfO2 Gate Stack nMOSFETs by 1/f Noise and Random Telegraph Noise. IEEE ED Lett., Vol. 34, no. 2, 2013, pp 151 – 153. DOI 10.1109/LED.2012.2226698

  6. Liang-Shun Chang, Chien-Yuan Huang, Yuan-Heng Tseng, Ya-Chin King, Chrong-Jung Lin: Temperature Sensing Scheme Through Random Telegraph Noise in Contact RRAM. IEEE ED Lett., Vol. 34, no. 1, 2013, pp. 12 – 14. DOI 10.1109/LED.2012.2226137

  7. Cher Xuan Zhang, En Xia Zhang, Fleetwood D.M., Schrimpf R.D., Dhar S., Sei-Hyung Ryu, Xiao Shen, Pantelides S.T.: Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs. IEEE ED Lett., Vol. 34, no. 1, 2013, pp 117 – 119. DOI 10.1109/LED.2012.2228161

  8. Amoroso S.M., Compagnoni C.M., Ghetti A., Gerrer L., Spinelli A.S., Lacaita A.L., Asenov A.: Investigation of the RTN Distribution of Nanoscale MOS Devices from Subthreshold to On-State. IEEE ED Lett., Vol. 34, no. 5, 2013, pp 683 – 685. DOI 10.1109/LED.2013.2250477

  9. Aadithya K.V., Demir A., Venugopalan S., Roychowdhury J.: Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs. IEEE Trans on CAD of Integrated Circuits and Systems, Vol. 32, no. 1, 2013, pp. 73 – 86. DOI 10.1109/TCAD.2012.2212897

  10. Holloway G.W., Song Yipu, Haapamaki C.M., LaPierre R.R., Baugh J.: Trapped Charge Dynamics in InAs Nanowires. Journal of Applied Physics, Vol.113, no. 2, 2013, pp 024511-1 – 024511-5. DOI 10.1063/1.4773820

  11. Ito K., Matsumoto T., Nishizawa S., Sunagawa H., Kobayashi K., Onodera H. : Modeling of Random Telegraph Noise under circuit operation — Simulation and measurement of RTN-induced delay fluctuation. 12th Int. Symp. on Quality Electronic Design (ISQED), 2011, pp.1 – 6. DOI 10.1109/ISQED.2011.5770698

  12. Liu W.H., Pey K.L., Raghavan N., Wu X., Bosman M., Kauerauf T.: Random telegraph noise reduction in metal gate high-κ stacks by bipolar switching and the performance boosting technique. IEEE Int. Reliability Physics Symp. (IRPS), 2011, pp.3A.1.1 – 3A.1.8. DOI 10.1109/IRPS.2011.5784474

  13. Goes W., Schanovsky F., Grasser T., Reisinger H., Kaczer B.: Advanced modeling of oxide defects for random telegraph noise. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 204 – 207. DOI 10.1109/ICNF.2011.5994301

  14. Tong Boon Tang, Murray A.F., Roy S.: Methodology of Statistical RTS Noise Analysis With Charge-Carrier Trapping Models. IEEE Trans on CAS I: Regular Papers, vol. 57, no. 5, 2010, pp. 1062 – 1070. DOI 10.1109/TCSI.2010.2043988

  15. Teramoto A., Fujisawa T., Abe K., Sugawa S., Ohmi T.: Statistical evaluation for trap energy level of RTS characteristics. 2010 Symp on VLSI Technology (VLSIT), 2010, pp. 99 – 100. DOI 10.1109/VLSIT.2010.5556186

  16. Zanolla N., Siprak D., Tiebout M., Baumgartner P., Sangiorgi E., Fiegna C.: Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias. IEEE Trans on ED, vol. 57, no. 5, 2010, pp.1119 – 1128. DOI 10.1109/TED.2010.2043554

  17. Mori Yuki, Takeda Kenichi, Yamada Ren-ichi: Random telegraph noise of junction leakage current in submicron devices. Journal of Applied Physics, vol. 107, no. 1, 2010, pp. 014509 – 014509-10. DOI 10.1063/1.3268479

  18. Pavelka J., Sikula J., Chvatal M., Tacano M., Toita M.: RTS noise amplitude and electron concentration in MOSFETs. Proc of 27th Int. Conf on Microelectronics (MIEL), 2010, pp. 475 – 478. DOI 10.1109/MIEL.2010.5490439

  19. Karami M. A., Carrara L., Niclass C., Fishburn M., Charbon E.: RTS Noise Characterization in Single-Photon Avalanche Diodes. IEEE ED Letters, vol. 31, no. 7, 2010, pp. 692 – 694. DOI 10.1109/LED.2010.2047234

  20. Hong B.B., Choi L., Jung Y.C., Hwang S.W., Cho K.H., Yeo K.H., Kim D., Jin G.Y., Park D., Song S.H., Lee Y.Y., Son M.H., Ahn D.: Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors. IEEE Trans on Nanotechnology, Vol 9, no 6, 2010, pp 754 – 758. DOI 10.1109/TNANO.2010.2045006

  21. Martin-Gonthier P., Magnan P.: RTS noise impact in CMOS image sensors readout circuit. 16th IEEE Int. Conf on Electronics, Circuits, and Systems (ICECS 2009), 2009, pp. 928 – 931. DOI 10.1109/ICECS.2009.5410825

  22. Tong Boon Tang, Murray A.F.: Integrating RTS noise into circuit analysis. IEEE Int. Symp on Circuits and Systems (ISCAS 2009), 2009, pp. 585 – 588. DOI 10.1109/ISCAS.2009.5117816

  23. Konczakowska A., Cichosz J., Szewczyk A.: A New Method for RTS Noise of Semiconductor Devices Identification. IEEE Trans on Instrum. & Meas., vol. 57, no. 6, 2008, pp. 1199 – 1206. DOI 10.1109/TIM.2007.915098

  24. Sikula J., Pavelka J., Tacano M., Toita M.: GRT model of RTS noise in MOSFETs. 2009 Int. Conf on Microelectronics (ICM), 2009, pp. 296 – 299. DOI 10.1109/ICM.2009.5418625

  25. Pavelka J., Sikula J., Tacano M., Toita M.: Amplitude of RTS noise in MOSFETs. 2009 Int. Conf on Microelectronics (ICM), 2009, pp. 346 – 349. DOI 10.1109/ICM.2009.5418614

  26. Sing-Rong Li, McMahon W., Lu Y.-L.R., Yung-Huei Lee: RTS Noise Characterization in Flash Cells. IEEE ED Letters, vol. 29, no. 1, 2008, pp. 106 – 108. DOI 10.1109/LED.2007.910776

  27. Raoult J., Pascal F., Delseny C., Marin M., Deen M. J.: Impact of carbon concentration on 1/f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors. Journal of Applied Physics, vol. 103, no. 11, 2008, pp. 114508 – 114508-10. DOI 10.1063/1.2939252

  28. Konczakowska A., Cichosz J., Szewczyk A.: A New Method for RTS Noise of Semiconductor Devices Identification. IEEE Trans on Instr. & Meas., Vol. 57, no. 6, 2008, pp 1199 – 1206. DOI 10.1109/TIM.2007.915098

  29. Zanolla N., Siprak D., Tiebout M., Baumgartner P., Sangiorgi E., Fiegna C.: The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias. 9th Int. Conf. on Solid-State and Integrated-Circuit Technology, (ICSICT 2008), 2008, pp. 80 – 83. DOI 10.1109/ICSICT.2008.4734476

  30. Grandchamp B., Maneux C., Labat N., Touboul A., Scavennec A., Riet M., Godin J.: Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT. 20th Int. Conf on Indium Phosphide and Related Materials (IPRM 2008), 2008, pp. 1 – 4. DOI 10.1109/ICIPRM.2008.4703044

  31. Neng-Ping Wang, S. Heinze, J. Tersoff: Random-Telegraph-Signal Noise and Device Variability in Ballistic Nanotube Transistors. Nano Lett., 2007, Vol 7, no 4, pp 910 – 913. DOI 10.1021/nl062742h

  32. Giusi G., Crupi F., Pace C.: A Procedure For Extracting 1/f Noise From Random Telegraph Signals. Proc of IEEE Instrum. and Measurement Technology Conf, (IMTC 2007), 2007, pp. 1 – 4. DOI 10.1109/IMTC.2007.379385

  33. Miller D. A., Poocharoen P., Forbes L.: 1/f Noise and RTS (Random Telegraph Signal) Errors in Sense Amplifiers. IEEE Workshop on Microelectronics and Electron Devices (WMED 2007), 2007, pp. 21 – 22. DOI 10.1109/WMED.2007.368839

  34. Sing-Rong Li, Lu Y.-L.R., McMahon W., Yung-Huei Lee, Mielke N.: RTS and 1/f Noise in Flash Memory. Int. Symp on VLSI Technology, Systems and Applications (VLSI-TSA 2007), 2007, pp. 1 – 2. DOI 10.1109/VTSA.2007.378918

  35. Fantini P., Ghetti A., Marinoni A., Ghidini G., Visconti A., Marmiroli A.: Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices. IEEE Electron Device Letters, vol. 28, no. 12, 2007, pp. 1114 – 1116. DOI 10.1109/LED.2007.909835

  36. Miller D. A., Poocharoen P., Forbes L.: Subthreshold Leakage Due to 1/F Noise and RTS (Random Telegraph Signals). IEEE Workshop on Microelectronics and Electron Devices (WMED 2007), 2007, pp. 23 – 24. DOI 10.1109/WMED.2007.368840

  37. Fei Liu, Wang K.L., Chao Li, Chongwu Zhou: Study of Random Telegraph Signals in Single-Walled Carbon Nanotube Field Effect Transistors. IEEE Trans on Nanotechnology, Vol. 5, no 5, 2006, pp 441 – 445. DOI 10.1109/TNANO.2006.880906

  38. Kolhatkar J.S., Hoekstra E., Salm C., van der Wel A.P., Klumperink E.A.M., Schmitz J., Wallinga H.: Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation. IEEE Int. Electron Devices Meeting, IEDM Technical Digest, 2004, pp. 759 – 762. DOI 10.1109/IEDM.2004.1419283

  39. Van der Wel A.P., Klumperink E.A.M., Vandamme L.K.J., Nauta B.: Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise. IEEE Trans on ED, vol. 50, no. 5, 2003, pp. 1378 – 1384. DOI 10.1109/TED.2003.813247

  40. Pogany D., Chroboczek J. A., Ghibaudo G.: Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics. Journal of Applied Physics, vol. 89, no. 7, 2001, pp. 4049 – 4058. DOI 10.1063/1.1352560

  41. Martin S., Li G.P., Huinan Guan, D'Souza S.: A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise. IEEE ED Letters, vol. 21, no. 1, 2000, pp. 30 – 33. DOI 10.1109/55.817443

  42. Yuzhelevski Y., Yuzhelevski M., Jung G.: Random telegraph noise analysis in time domain. Review of Scientic Instruments, Vol. 71, No. 4, 2000, pp 1682 – 1688. DOI 10.1063/1.1150519

  43. Martin S., Li G.P., Guan H., D'Souza S., Matloubian M., Claudius G., Compton G.: BSIM3 based RTS and 1/f noise models suitable for circuit simulators. Int. Electron Devices Meeting, IEDM '98 Technical Digest, 1998, pp. 85 – 88. DOI 10.1109/IEDM.1998.746284

  44. Ouisse T., Platel E., Billon T., Lahreche H.: Observation of random telegraph signal in SiC Schottky diodes. Electronics Letters, vol. 33, no. 22, pp. 1907 – 1909., 1997 DOI 10.1049/el:19971302

  45. Simoen E., Claeys C.: Gate length effect on the RTS noise amplitude in SOI MOSFETs. IEEE ED Letters, vol. 17, no. 4, pp. 181 – 183., 1996 DOI 10.1109/55.485167

  46. Liu F.H., Kryder M.H.: Inductance fluctuation, domain instability and popcorn noise in thin film heads. IEEE Trans on Magnetics, vol. 30, no. 6, 1994, pp. 3885 – 3887. DOI 10.1109/20.333933

  47. Liu F. H., Kryder M. H.: Dynamic domain instability and popcorn noise in thin‐film heads. Journal of Applied Physics, vol. 75, no. 10, pp. 6391 – 6393., 1994
    DOI 10.1063/1.355360

  48. Simoen E., Dierickx B., Claeys C.L., Declerck G.J.: Explaining the amplitude of RTS noise in submicrometer MOSFETs. IEEE Trans on ED, vol. 39, no. 2, 1992, pp. 422 – 429. DOI 10.1109/16.121702

  49. Morikawa K., Matsuura T., Horibata S., Shibata H.: A study of popcorn noise for thin film heads. IEEE Trans on Magnetics, vol. 27, no. 6, 1991, pp. 4939 – 4941. DOI 10.1109/20.278702

  50. Roux O., Dierickx B., Simoen E., Claeys C., Ghibaudo G., Brini J.: Investigation of Drain Current RTS Noise in Small Area Silicon MOS Transistors. 21st European Solid State Device Research Conf. (ESSDERC '91), 1991, pp. 547 – 550. Print ISBN: 0444890661

  51. Cottle J., Chen C.: Computerized Analysis of Burst Noise in Thick Film Resistors. IEEE Trans on Components, Hybrids, and Manufacturing Technology, vol. 6, no. 2, 1983, pp. 163 – 167. DOI 10.1109/TCHMT.1983.1136172

  52. Roedel R., Viswanathan C.R.: Reduction of popcorn noise in integrated circuits. IEEE Trans on ED, vol. 22, no. 10, 1975, pp. 962 – 964. DOI 10.1109/T-ED.1975.18251

  53. Koji T.: The effect of emitter-current density on popcorn noise in transistors. IEEE Trans on ED, vol. 22, no. 1, 1975, pp. 24 – 25. DOI 10.1109/T-ED.1975.18067

  54. Koji T.: Popcorn noise and generation-recombination noise observed in ion-implanted silicon resistors. Electronics Letters, vol. 11, no. 9, 1975, pp. 185 – 186. DOI 10.1049/el:19750141

  55. Oren R.: Discussion of various views on popcorn noise. IEEE Trans on ED, vol. 18, no. 12, 1971, pp. 1194 – 1195. DOI 10.1109/T-ED.1971.17359

  56. Hsu S. T., Whittier R.J., Mead C. A.: Physical Model for Burst Noise in Semiconductor Devices. Solid-State Electronics, Vol. 13, no 7, 1970, pp 1055 – 1071. doi:10.1016/0038-1101(70)90102-4

  57. Hsu S.T., Whittier R.J.: Characteristics of burst (popcorn) noise in transistors and operational amplifiers. 1969 Int Electron Devices Meeting, vol. 15, 1969, pp. 86 – 88. DOI 10.1109/IEDM.1969.188144

  58. Leonard P.L., Jaskolski S.V.: Micro-plasma model of Popcorn noise. 1969 Int Electron Devices Meeting, vol. 15, 1969, pp. 84 – 86. DOI 10.1109/IEDM.1969.188143

  59. Leonard P.L., Jaskolski S.V.: An investigation into the origin and nature of Popcorn noise. Proc of the IEEE, vol. 57, no. 10, 1969, pp. 1786 – 1788. DOI 10.1109/PROC.1969.7412

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    Diffusion noise

  1. Buscemi F., Piccinini E., Rudan M., Brunetti R., Jacoboni C.: Diffusion and High-Frequency Noise of Electrons in Amorphous Semiconductors at Low Electric Fields. Fluctuation & Noise Lett., Vol. 11, no. 3, Special no. SI, 2012, Article # 1242004. DOI 10.1142/S0219477512420047

  2. Rocha P.R.F., Gomes H.L.l, Vandamme L.K.J., Chen Q., Kiazadeh A., de Leeuw D.M., Meskers S.C.J.: Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal-Oxide Polymer Structure. IEEE Trans on ED, Vol. 59, no. 9, 2012, pp. 2483 – 2487. DOI 10.1109/TED.2012.2204059

  3. Nougier J.P., Varani L.: Noise and diffusion of hot carriers in semiconductor materials and devices. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 1 – 8. DOI 10.1109/ICNF.2011.5994299

  4. Sungjae Lee, Webb K.J: A Correlated Diffusion Noise Model for the Field-Effect Transistor. IEEE Trans on CAD of Integrated Circuits and Systems, Vol. 26, no 10, 2007, pp. 1782-1789 DOI 10.1109/TCAD.2007.895770

  5. Zocchi F. E: Generation-recombination and thermal noise coupling in the drift-diffusion mode. Journal of Applied Physics, vol 102, no. 10, 2007, pp. 103712 – 103712-5. DOI 10.1063/1.2811847

  6. Moktadir Z, van Honschoten J. W, Elwenspoek M: Long range diffusion noise in platinum microwires with metallic adhesion layers. Applied Physics Letters, Vol. 90, no 23, 2007, pp. 233506 – 233506-3. DOI 10.1063/1.2746961

  7. Otten F, Kish L. B, Granqvist C.-Gł, Vandamme L. K. J, Vajtai R, Kruis F. E, Fissan H: Charge diffusion noise in monocrystalline PbS nanoparticle films. Applied Physics Letters, Vol. 77, no 21, 2000, pp. 3421 – 3422. DOI 10.1063/1.1327614

  8. Gomila G., Bulashenko O. M., Rubi J. M: Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory. Journal of Applied Physics, vol 83, no. 5, 1998, pp. 2619 – 2630. DOI 10.1063/1.367024

  9. Wu Y, Niu G.F, Ruan G: Monte Carlo simulation of diffusion noise in AlGaAs/InGaAs/GaAs hetero-structure. Conf Proc. Seventh Int. Conf on Indium Phosphide and Related Materials, pp. 401-403, 1995 DOI 10.1109/ICIPRM.1995.522164

  10. Yeom K., Hinckley J. M., Singh J.: The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1. Journal of Applied Physics, Vol. 78, no. 9, pp. 5454-5459, Nov 1995 DOI 10.1063/1.359660

  11. Mateos J., Gonzalez T., Pardo D.: Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures. Applied Physics Letters, Vol. 67, no 5, 1995, pp. 685 – 687. DOI 10.1063/1.115203

  12. Ghione G, Wang B, Curow M: Comments on numerical large-signal simulation of the diffusion noise in GaAs Gunn devices' [and reply]. IEEE Trans on ED, Vol. 40, no 10, 1993, pp. 1902 – 1903. DOI 10.1109/16.277358

  13. Wang B, Curow M: Numerical large-signal simulation of the diffusion noise in GaAs Gunn devices., IEEE Trans on ED, Vol. 39, no 9, 1992, pp. 2176 – 2178. DOI 10.1109/16.155890

  14. Li Z.-M, McAlister S.P, Day D.J: Analytical model of low-frequency diffusion noise in GaAs MESFETs. IEEE Trans on ED, Vol. 38, no 2, 1991, pp. 232 – 236. DOI 10.1109/16.69899

  15. Brunetti R., Goodnick S. M: A Monte Carlo Analysis of Diffusion-Noise Properties in GaAs-AlGaAs Quantum Wells. 17th European Solid State Device Research Conf, (ESSDERC '87), 1987, pp. 181 – 184. Print ISBN: 0444704779

  16. Duh K.H, Zhu X.C, van der Ziel A: Low-frequency diffusion noise in GaAs MESFET's. IEEE ED Letters, Vol. 5, no 6, 1984, pp. 202 – 204. DOI 10.1109/EDL.1984.25887

  17. Grondin R.O., Blakey P.A., East J.R., Rothman E.D.: Monte Carlo estimation of hot carrier noise at millimeter- and submillimeter-wave frequencies. IEEE Trans on ED, vol. 28, no. 8, 1981, pp. 914 – 923. DOI 10.1109/T-ED.1981.20459

  18. Huang C.H, van der Ziel A, van Vliet K.M: Diffusion noise in double-injection diodes in the ohmic relaxation regime. Electronics Letters, Vol. 7, no 11, 1971, pp. 291 – 292. DOI 10.1049/el:19710201

  19. de Murcia M., Gasquet D., Elamri A., Nougier J.-P., Vanbremeersch J: Diffusion and noise in GaAs material and devices. IEEE Trans on ED, vol 38, no. 11, 1991, pp. 2531 – 2539. DOI 10.1109/16.97419

  20. Nougier J. P.: Identity between spreading and noise diffusion coefficients for hot carriers in semiconductors. Applied Physics Letters, Vol. 32, no. 10, 1978, pp. 671 – 673. DOI 10.1063/1.89850

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    Electrochemical noise

  1. Jez M., Mitoraj M., Godlewska E., Jakubowska M., Bas B.: Evaluation of Corrosion Behaviour of Selected Metallic Samples by Electrochemical Noise Measurements. Journal of Solid State Electrochemistry, Vol. 18, no. 6, 2014, pp. 1635 – 1646. DOI 10.1007/s10008-014-2387-1

  2. Suresh Girija, Mudali U.K.: Electrochemical Noise Analysis of Pitting Corrosion of Type 304L Stainless Steel. Corrosion, Vol. 70, no. 3, 2014, pp. 283 – 293. DOI 10.5006/1003

  3. Jamali S.S., Mills D.J., Sykes J.M.: Measuring Electrochemical Noise of a Single Working Electrode for Assessing Corrosion Resistance of Polymer Coated Metals. Progress in Organic Coatings, Vol. 77, no. 3, 2014, pp. 733 – 741. DOI 10.1016/j.porgcoat.2013.12.014

  4. Markhali B.P., Naderi R., Mandavian M.: Characterization of Corrosion Inhibition Performance of Azole Compounds Through Power Spectral Density of Electrochemical Noise. Journal of Electroanalytical Chemistry, Vol. 714, 2014, pp. 56 – 62. DOI 10.1016/j.jelechem.2013.12.024

  5. Bosch R-W., Cottis R.A., Csecs K., et al.: Reliability of Electrochemical Noise Measurements: Results of Round-Robin Testing on Electrochemical Noise. Electrochimica Acta, Vol. 120, 2014, pp. 379 – 389. DOI 10.1016/j.electacta.2013.12.093

  6. Rathod R.C., Sapate S.G., Raman R., Rathod W.S.: Stress Corrosion Cracking Study of Aluminum Alloys Using Electrochemical Noise Analysis. J. of Materials Eng. & Performance, Vol. 22, no. 12, 2013, pp. 3801 – 3809. DOI 10.1007/s11665-013-0705-x

  7. Curioni M., Cottis R.A., Thompson G.E.: Application of Electrochemical Noise Analysis to Corroding Aluminium Alloys. Surface & Interface Analysis, Vol. 45, no. 10, 2013, pp. 1564 – 1569. DOI 10.1002/sia.5173

  8. Curioni M., Cottis R.A., Thompson G.E.: Interpretation of Electrochemical Noise Generated by Multiple Electrodes. Corrosion, Vol. 69, no. 2, 2013, pp. 158 – 166. DOI 10.5006/0701

  9. Homborg A.M., Tinga T., Zhang X., van Westing E.P.M., Oonincx P.J., Ferrari G.M., de Wit J.H.W., Mol J.M.C.: Transient Analysis Through Hilbert Spectra of Electrochemical Noise Signals for the Identification of Localized Corrosion of Stainless Steel. Electrochimica Acta, Vol. 104, 2013, pp. 84 – 93. DOI 10.1016/j.electacta.2013.04.085

  10. Shahidi M., Moghaddam R. Farrehi Gholamhosseinzadeh M.R., Hosseini S.M.A: Investigation of the cathodic process influence on the electrochemical noise signals arising from pitting corrosion of Al alloys using wavelet analysis. J. of Electroanalytical Chemistry, Vol. 693, 2013, pp. 114 121. DOI 10.1016/j.jelechem.2013.01.020

  11. Heyn A., Goellner J.: Analysis and Monitoring of Corrosion using Electrochemical Noise - 5(th) Part. Materials & Corrosion - Werkstoffe & Korrosion, Vol. 64, no. 8, 2013, pp. 663 – 663. DOI 10.1002/maco.201390020

  12. Safizadeh F., Ghali E.: Electrochemical Noise of Copper Anode Behaviour in Industrial Electrolyte Using Wavelet Analysis. Trans of Nonferrous Metals Society of China, Vol. 23, no. 6, 2013, pp. 1854 – 1862. DOI 10.1016/S1003-6326(13)62670-9

  13. Wang Xuehui, Wang Jihui, Fu Congwei, Gao Yingkun: Determination of Corrosion Type by Wavelet-Based Fractal Dimension from Electrochemical Noise. Int. J. of Electrochemical Science, Vol. 8, no. 5, 2013, pp. 7211 – 7222.

  14. Li Jian, Kong Weikang, Shi Jiangbo, Wang Ke, Wang Weikui, Zhao Weipu, Zeng Zhoumo: Determination of Corrosion Types from Electrochemical Noise by Artificial Neural Networks. Int. J. of Electrochemical Science, Vol. 8, no. 2, 2013, pp. 2365 – 2377.

  15. Nava-Dino C.G., Orozco-Carmona V.M., Monreal-Romero H.A., et al.: Fuzzy Sets and Electrochemical Noise to Predict Corrosion Behavior of Ti Alloys. Int. J. of Electrochemical Science, Vol. 8, no. 4, 2013, pp. 4996 – 5006.

  16. Macia L.F., Tourwe E., Pintelon R., Hubin A.: A New Modeling Method for Determining Electrochemical Parameters from LSV Experiments Using the Stochastic Noise. Part I: Theory and Validation. J. of Electroanalytical Chemistry, Vol. 690, 2013, pp. 127 – 135. DOI 10.1016/j.jelechem.2012.11.030

  17. Xia Dahai, Shi Jiangbo, Gong Wenqi, Zhou Rongji, Gao Zhiming, Wang Jihui: The Significance of Correlation Dimension Obtained from Electrochemical Noise. Electrochemistry, Vol. 80, no. 11, 2012, pp. 907 – 912. DOI 10.5796/electrochemistry.80.907

  18. Rivera A L., Castano V.M.: Corrosion Analysis by Electrochemical Noise: A Teaching Approach. J. of Materials Education, Vol. 34, no. 5-6, 2012, pp. 151 – 159.

  19. Shahidi M., Jafari A.H., Hosseini S.M.A.: Comparison of Symmetrical and Asymmetrical Cells by Statistical and Wavelet Analysis of Electrochemical Noise Data. Corrosion, Vol. 68, no. 11, 2012, pp. 1003 – 1014. DOI 10.5006/0626

  20. Loto C.A.: Electrochemical Noise Measurement Technique in Corrosion Research. Int. J. of Electrochemical Science, Vol. 7, no. 10, 2012, pp. 9248 – 9270.

  21. Homborg A.M., Tinga T., Zhang X., van Westing E.P.M., Oonincx P.J., de Wit J.H.W., Mol J.M.C.: Time-Frequency Methods for Trend Removal in Electrochemical Noise Data. Electrochimica Acta, Vol. 70, 2012, pp. 199 – 209. DOI 10.1016/j.electacta.2012.03.062

  22. Ritter S., Huet F., Cottis R.A.: Guideline for an Assessment of Electrochemical Noise Measurement Devices. Materials & Corrosion - Werkstoffe & Korrosion, Vol. 63, no. 4, 2012, pp. 297 – 302. DOI 10.1002/maco.201005839

  23. Wei Shicheng, Yi Liang, Yi Liu, Wang Yujing, Xu Binshi: Research of Electrochemical Noise Technology on Corrosion Resistance. Rare Metal Materials & Engineering, Vol. 41, Supplement: 1, 2012, pp. 164 – 167.

  24. Xia Dahai, Song Shizhe, Wang Jihui, Shi Jiangbo , Bi Huichao , Gao Zhiming: Determination of Corrosion Types from Electrochemical Noise by Phase Space Reconstruction Theory. Electrochemistry Communications, Vol. 15, no. 1, 2012, pp. 88 – 92. DOI 10.1016/j.elecom.2011.11.032

  25. Montesperelli G., Gusmano G.: Electrochemical Noise for Corrosion Detection. Corrosion Reviews, Vol. 29, no. 5-6, Special no. SI, 2011, pp. 247 – 252. DOI 10.1515/CORRREV.2011.012

  26. Kim Jong Jip: Interpretation of Electrochemical Noise by Wavelet Transform and Fractal Analysis. Metals & Materials Int., Vol. 17, no. 5, 2011, pp. 777 – 782. DOI 10.1007/s12540-011-1013-3

  27. Grafov B.M.: Gibbs Fluctuation Theory in the Context of Electrochemical Equilibrium Noise. Pure & Applied Chemistry, Vol. 83, no. 2, 2011, pp. 253 – 257. DOI 10.1351/PAC-CON-10-07-10

  28. Muniandy S.V., Chew W.X., Kan C.S.: Multifractal Modelling of Electrochemical Noise in Corrosion of Carbon Steel. Corrosion Science, Vol. 53, no. 1, 2011, pp. 188 – 200. DOI 10.1016/j.corsci.2010.09.005

  29. Kim Jong Jip: Electrochemical Noise Analysis of Localized Corrosion by Wavelet Transform. Metals & Materials Int., Vol. 16, no. 5, 2010, pp. 747 – 753. DOI 10.1007/s12540-010-1008-5

  30. Huang J.Y., Qiu Y.B., Guo X.P.: Comparison of Polynomial Fitting and Wavelet Transform to Remove Drift in Electrochemical Noise Analysis. Corrosion Eng. Science & Technology, Vol. 45, no. 4, 2010, pp. 288 – 294. DOI 10.1179/147842208X338956

  31. Soltis J., Krouse D.P., Laycock N.J., Zavadil, K. R.: Automated Processing of Electrochemical Current Noise in the Time Domain: I. Simulated Signal. Corrosion Science, Vol. 52, no. 3, 2010, pp. 838 – 847. DOI 10.1016/j.corsci.2009.11.007

  32. Safizadeh F., Lafront A.-M., Ghali E., Houlach G.: Monitoring the Quality of Copper Deposition by Statistical and Frequency Analyses of Electrochemical Noise. Hydrometallurgy, Vol. 100, no. 3-4, 2010, pp. 87 – 94. DOI 10.1016/j.hydromet.2009.10.005

  33. Smith M.T., Macdonald D.D.: Wavelet Analysis of Electrochemical Noise Data. Corrosion, Vol. 65, no. 7, 2009, pp. 438 – 448.

  34. Kim Jong Jip: On the Determination of Electrochemical Noise Resistance. Metals & Materials Int., Vol. 15, no. 2, 2009, pp. 279 – 283. DOI 10.1007/s12540-009-0279-1

  35. Huang J.Y., Qiu Y.B., Guo X.P.: Cluster and Discriminant Analysis of Electrochemical Noise Statistical Parameters. Electrochimica Acta, Vol. 54, no. 8, 2009, pp. 2218 – 2223. DOI 10.1016/j.electacta.2008.10.039

  36. H. S. Klapper, J. Goellner: Electrochemical noise from oxygen reduction on stainless steel surfaces. Corrosion Science, Vol 51, 2009, pp 144 – 150. doi:10.1016/j.corsci.2008.10.009

  37. Jun Zhan, Xiaofang Liu, Qian Zhang, Qingjie Liu, Feng Long: Chaos analysis of the influence of tensile stress on electrochemical noise. Int. Conf. on Industrial Mechatronics and Automation (ICIMA 2009), 2009, pp 418 – 421. DOI 10.1109/ICIMA.2009.5156652

  38. Hong Men, Caihong Wang, Yan Peng, Shanrang Yang, Zhiming Xu: Analysis of electrochemical noise based on wavelet signal de-nosing. IEEE Int. Conf. on Intelligent Computing and Intelligent Systems (ICIS 2009), Vol. 3, 2009, pp 248 – 252. DOI 10.1109/ICICISYS.2009.5358173

  39. Smulko J.M., Darowicki K., Zieliski A.: On Electrochemical Noise Analysis for Monitoring of Uniform Corrosion Rate. IEEE Trans. on Instrum. & Meas., Vol. 56, no 5, 2007, pp 2018 – 2023. DOI 10.1109/TIM.2007.895624

  40. Smulko J.: Novel Method of Local Corrosion Events Characterization by Electrochemical Noise Analysis. Proc. of the IEEE Instrum. & Meas. Technology Conf. (IMTC 2006), 2006, pp 706 – 709. DOI 10.1109/IMTC.2006.328142

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    G-R noise

  1. Theodorou C.G., Ioannidis E.G., Andrieu F., Poiroux T., Faynot O., Dimitriadis C.A, Ghibaudo G.: Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs. IEEE Trans on ED, Vol. 61, no. 4, 2014, pp. 1161 – 1167. DOI 10.1109/TED.2014.2307201

  2. Scarpino M., Gupta S., Lin D., Alian A, Crupi F., Collaert N., Thean A, Simoen E.: Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise. IEEE ED Lett., Vol. 35, no. 7, 2014, pp. 720 – 722. DOI 10.1109/LED.2014.2322388

  3. Nsele S.D., Escotte L., Tartarin J.-G., Piotrowicz S.: Noise Characteristics of AlInN/GaN HEMTs at Microwave Frequencies. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578989

  4. Palenskis V., Matukas J., Pralgauskaite S., Seliuta D., Kasalynas I., Subacius L., Valusis G., Khanna S.P., Linfield E.H.: Low-frequency Noise Properties of Beryllium δ-doped GaAs/AlAs Quantum Wells Near the Mott Transition. Journal of Applied Physics, Vol.113, no. 8, 2013, pp. 083707.1 – 083707.7. DOI 10.1063/1.4792741

  5. Han C.Y., Qian L.X., Leung C.H., Che C.M., Lai P.T.: A Low-frequency Noise Model with Carrier Generation-Recombination Process for Pentacene Organic Thin-film Transistor. Journal of Applied Physics, Vol.114, no. 4, 2013, pp. 044503.1 – 044503.6. DOI 10.1063/1.4816103

  6. Escotte L., Gonneau E.: Generation-Recombination Noise, Allan Variance, and Low-Frequency Gain Instabilities in Microwave Amplifiers. Int. Conf on Noise and Fluctuations (ICNF), 2013. DOI 10.1109/ICNF.2013.6579003

  7. Sydoruk V.A, Goss K., Meyer C., Danilchenko B.A, Petrychuk M.V., Li J., Pud S., Vitusevich S.: Noise Properties of Carbon Nanotube FETs with Top-and Side-Gate Geometries: Effect of Gamma Irradiation. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578937

  8. Simoen E., de Andrade M.G.C., Aoulaiche M., Collaert N., Claeys C.: Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells. IEEE Trans on ED, Vol. 59, no. 5, 2012, pp.1272 – 1278. DOI 10.1109/TED.2012.2186815

  9. Luque Rodriguez A., Tejada J.A.J.., Rodriguez-Bolivar S., Almeida L.M., Aoulaiche M., Claeys C., Simoen E.: Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs. IEEE Trans on ED, Vol. 59, no. 10, 2012, pp. 2780 – 2786. DOI 10.1109/TED.2012.2208970

  10. Theodorou C.G., Tsormpatzoglou A, Dimitriadis C.A, Khan S.A, Hatalis M.K., Jomaah J., Ghibaudo G.: Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors. IEEE ED Lett., Vol. 32, no. 7, 2011, pp. 898 – 900. DOI 10.1109/LED.2011.2143386

  11. Sokolov V. N., Kochelap V. A., Kim K. W.: Generation-Recombination Noise in Bipolar Graphene. Journal of Applied Physics, Vol. 110, no. 4, 2011, pp. 044327.1 – 044327.4. DOI 10.1063/1.3626820

  12. Maione I. A., Pellegrini B., Fiori G., Macucci M., Guidi L., Basso G.: Shot Noise Suppression in P-N Junctions Due to Carrier Generation-Recombination. Physical Review B, Vol. 83, no. 15, 2011, Article # 155309. DOI 10.1103/PhysRevB.83.155309

  13. Rodriguez A.L., Jimenez Tejada J.A., Gonzalez M.M., Planes M.R., Varo P.L., Godoy A.: Study of 1/f and generation-recombination noise in four gate transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 283 – 286. DOI 10.1109/ICNF.2011.5994322

  14. Andreev A., Raska M., Sikula J., Grmela L.: Noise sources of p-type CdTe single crystal. 31st Int. Spring Seminar on Electronics Technology (ISSE '08), 2008, pp 25 – 27. DOI 10.1109/ISSE.2008.5276487

  15. Szentpali B.: Noise Limitations of the Applications of Miniature Thermal Resistors. IEEE Sensors Journal, Vol. 7, no 9, 2007, pp 1293 – 1299. DOI 10.1109/JSEN.2007.901267

  16. Zocchi F. E.: Generation-recombination and thermal noise coupling in the drift-diffusion model. Journal of Applied Physics, Vol. 102, no 10, 2007, pp 103712 – 103712-5. DOI 10.1063/1.2811847

  17. Jha S. K., C. Surya, K. J. Chen, K. M. Lau: Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor. Proc. of the 36th European Solid-State Device Research Conf. (ESSDERC), 2006, pp 105 – 108. DOI 10.1109/ESSDER.2006.307649

  18. Rumyantsev S. L., Dmitriev A. P., Levinshtein M. E., Veksler D., Shur, Michael S., Palmour J. W., Das M. K., Hull B. A.: Generation-recombination noise in forward biased 4H-SiC p-n diodes. Journal of Applied Physics, Vol. 100, no 6, 2006, pp 064505 – 064505-6. DOI 10.1063/1.2345037

  1. Kunets V.P., Pomraenke R., Dobbert J., Kissel H., Muller U., Kostial H., Wiebicke E., Tarasov G.G., Mazur Y.I., Masselink W.T.: Generation-recombination noise in pseudomorphic Modulation-doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs micro-Hall devices. IEEE Sensors Journal, Vol. 5, no 5, 2005, pp 883 – 888. DOI 10.1109/JSEN.2004.841436

  2. Edwards P.J.: Recombination noise in semiconductor junction devices. IEE Proc. Circuits, Devices and Systems, Vol. 151, no. 2, 2004, pp. 175 – 183. DOI 10.1049/ip-cds:20040464

  3. Hastas N. A., Dimitriadis C. A., Kamarinos G.: Correlation of the generation-recombination noise with reliability issues of polycrystalline silicon thin-film transistors. Applied Physics Letters, Vol. 85, no 2, 2004, pp 311 – 313. DOI 10.1063/1.1769073

  4. Seghier D., Arinbjarnason T.M., Gislason H.P.: Deep-defect related generation-recombination noise in GaAs. 13th Int. Conf. on Semiconducting and Insulating Materials (SIMC-XIII-2004), 2004, pp 234 - 237. DOI 10.1109/SIM.2005.1511426

  5. Tzeng S. Y., Cich M. J., Zhao R., Feick H., Weber E. R.: Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs. Applied Physics Letters, Vol. 82, no 7, 2003, pp 1063 – 1065. DOI 10.1063/1.1555710

  6. Van Vliet Carolyne M.: Electronic noise due to multiple trap levels in homogeneous solids and in space-charge layers. J of Applied Physics, Vol. 93, no 10, 2003, pp 6068 – 6077. DOI 10.1063/1.1563291

  7. Ang D.S., Lun Z., Ling C.H.: Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling. IEEE Trans. on ED, Vol. 50, no 12, 2003, pp 2490 – 2498. DOI 10.1109/TED.2003.819371

  8. Sanchez J.E., Bosman G., Law M.E.: Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models. IEEE Trans. on ED, Vol. 50, no 5, 2003, pp 1353 – 1362. DOI 10.1109/TED.2003.813448

  9. Iqbal, M.A., Khan, S.H.: Generation-recombination noise characteristics of GaAs MESFETs. 7th Int. Multi Topic Conf. (INMIC), 2003, pp 192 – 196. DOI 10.1109/INMIC.2003.1416694

  10. Gomila G., Reggiani L.: Size effects on generation-recombination noise. Applied Physics Letters, Vol. 81, no 23, 2002, pp 4380 – 4382. DOI 10.1063/1.1526915

  11. Tejada J.A.J., Godoy A., Palma A., Cartujo P.: Temperature dependence of generation-recombination noise in p-n junctions. Proc. of the 5th European Workshop on Low Temperature Electronics, 2002, pp 71 – 74. DOI 10.1109/WOLTE.2002.1022453

  12. Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S., Gaska, R., Khan, M.A.: Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride. IEE Proc. - Circuits, Devices and Systems, Vol. 149, no 1, 2002, pp 32 – 39. DOI 10.1049/ip-cds:20020328

  13. Pala N., Rumyantsev S., Gaska R., Shur M., Yang J., Hu X., Simin G., Khan M.A.: Low frequency noise in Al0.4Ga0.6N thin films. Proc. IEEE Lester Eastman Conf. on High Performance Devices, 2002, pp 164 – 171. DOI 10.1109/LECHPD.2002.1146746

  14. Tejada J. A., Jimenez Godoy A., Palma A., Villanueva J. A. L.: Generation-recombination noise in highly asymmetrical p–n junctions. Journal of Applied Physics, Vol. 92, no 1, 2002, pp 320 – 329. DOI 10.1063/1.1486252

  15. Fan-Chi Hou, Bosman G., Law M.E.: Maximum allowable bulk defect density for generation-recombination noise-free device operation. IEEE Trans. on ED, Vol. 49, no 11, 2002, pp 2080 – 2082. DOI 10.1109/TED.2002.804705

  16. Sanchez J.E., Bosman G., Law M.E.: Device simulation of generation-recombination noise under periodic large-signal conditions. Int. Electron Devices Meeting (IEDM) Technical Digest, 2001, pp 21.1.1 – 21.1.4. DOI 10.1109/IEDM.2001.979549

  17. Babcock J.A., Loftin B., Madhani P., Xinfen Chen, Pinto A., Schroder D.K.: Comparative low frequency noise analysis of bipolar and MOS transistors using an advanced complementary BiCMOS technology. IEEE Conf. on. Custom Integrated Circuits, 2001, pp 385 – 388. DOI 10.1109/CICC.2001.929806

  18. Ang D.S., Lun Z., Ling C.H.: Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region. IEEE ED Letters, Vol. 22, no 11, 2001, pp 545 – 547. DOI 10.1109/55.962658

  19. Rumyantsev S.L., Pala N., Shur M.S., Borovitskaya E., Dmitriev A.P., Levinshtein M.E., Gaska R., Khan M.A., Jinwei Yang, Xuhong Hu, Simin G.: Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors. IEEE Trans. on ED, Vol. 48, no 3, 2001, pp 530 – 534. DOI 10.1109/16.906447

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  21. Perez S., Gonzalez T., Delage S. L., Obregon J.: Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields. Journal of Applied Physics, Vol. 88, no 2, 2000, pp 800 – 807. DOI 10.1063/1.373739

  22. Mohammadi S., Pavlidis D.: A nonfundamental theory of low-frequency noise in semiconductor devices. IEEE Trans. on ED, Vol. 47, no 11, 2000, pp 2009 – 2017. DOI 10.1109/16.877159

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  24. Yuping Chen, VanVliet C.M., Larkins G.L., Jr., Morkoc H.: Generation-recombination noise in nongated and gated AlxGa1-xAs/GaAs TEGFETs in the range 1 Hz to 1 MHz. IEEE Trans. on ED, Vol. 47, no 11, 2000, pp 2045 – 2053. DOI 10.1109/16.877165

  25. F. Bonani, G. Ghione: Generation-recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations. Solid State Electronics, Vol. 43, no. 2, 1999, pp. 285–295. DOI 10.1016/S0038-1101(98)00253-6

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  27. Lukyanchikova N., Petrichuk M., Garbar N., Simoen E., Claeys C.: Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs. IEEE Trans. on ED, Vol. 43, no 3, 1996, pp 417 – 423. DOI 10.1109/16.485655

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  29. Lin H.S., Colestock P.A., Fang P., Chen T.M.: Generation-recombination noise in GaAs p+-i-n+ diodes. Proc. IEEE Southeastcon '89 Energy and Information Technologies in the Southeast, Vol. 3, 1989, pp 1295 – 1297. DOI 10.1109/SECON.1989.132631

  30. Kugler S.: Generation-recombination noise in the saturation regime of MODFET structures. IEEE Trans. on ED, Vol. 35, no 5, 1988, pp 623 – 628. DOI 10.1109/16.2504

  31. Macucci M., Pellegrini B., Terreni P., Reggiani L.: Correlation between thermal and generation recombination noise sources: Analytical and Monte Carlo approaches. Journal of Applied Physics, Vol. 63, no 11, 1988, pp 5369 – 5374. DOI 10.1063/1.340354

  32. Forbes L., Canfield P., Gleason R., McCamant A.: VIB-2 Separation of generation-recombination and 1/f noise components in GaAs FET's. IEEE Trans. on ED, Vol. 31, no 12, 1984, pp 1986. DOI 10.1109/T-ED.1984.21890

  33. Zhang X.N., van der Ziel A., Duh K.H., Morkoc H.: Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors. IEEE ED Letters, Vol. 5, no 7, 1984, pp 277 – 279. DOI 10.1109/EDL.1984.25916

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    Quantum noise

  1. Yu C.C., Zhi Chen: Noise in Superconducting Qubits and Spin Glasses. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6579005

  2. Handel P.H.: Decoherence and Conventional Quantum 1/f Noise. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578914

  3. Vuglar S.L., Petersen I.R.: Quantum Implemention of an LTI System with the Minimal Number of Additional Quantum Noise Inputs. European Control Conference (ECC), 2013, pp. 2724 – 2727. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6669508&isnumber=6669080

  4. Nan Zhao, Jia-Lin Zhu, R-B Liu, C P Sun: Quantum noise theory for quantum transport through nanostructures. New J. Phys., Vol 13, no 1, 2011, pp 013005-1 – 013005-12. DOI 10.1088/1367-2630/13/1/013005

  5. Zhang W., Khosropanah P., Gao J. R., Kollberg E. L., Yngvesson K. S., Bansal T., Barends R., Klapwijk T. M.: Quantum noise in a terahertz hot electron bolometer mixer. Applied Physics Letters, Vol. 96, no. 11, 2010, pp. 111113 – 111113-3. DOI 10.1063/1.3364936

  6. Pant M., Ang L.K., Koh W.S.: Quantum shot noise reduction for electron field emission from different shapes. 8th Int. Vacuum Electron Sources Conf. and Nanocarbon (IVESC), 2010, pp. 266-267 DOI 10.1109/IVESC.2010.5644265

  7. Khosropanah P., Wen Zhang; Kollberg E.L., Yngvesson K.S., Gao J.R., Bansal T., Hajenius M.: Analysis of NbN Hot Electron Bolometer Receiver Noise Temperatures Above 2 THz With a Quantum Noise Model. IEEE Trans. on Applied Superconductivity, Vol. 19, no. 3, 2009, pp. 274 – 277. DOI 10.1109/TASC.2009.2018817

  8. J. Gabelli, B. Reulet: High frequency dynamics and the third cumulant of quantum noise. J. Stat. Mech., 2009, P01049. DOI 10.1088/1742-5468/2009/01/P01049

  9. A . Alarcón, X. Oriols: Computation of quantum electron transport with local current conservation using quantum trajectories. J. Stat. Mech., 2009, P01051. DOI 10.1088/1742-5468/2009/01/P01051

  10. Huntington E.H., Harb C.C., Heurs M., Ralph T.C.: The Quantum Noise Limits to Simultaneous Intensity and Frequency Stabilization of Solid-State Lasers. Conf. on Lasers and Electro-Optics (CLEO), pp. 1 – 2., 2007 DOI 10.1109/CLEO.2007.4453689

  11. Kollberg E.L., Yngvesson K.S.: Quantum-noise theory for terahertz hot electron bolometer mixers. IEEE Trans. on MTT, Vol. 54, no. 5, 2006, pp. 2077 – 2089. DOI 10.1109/TMTT.2006.873628

  12. Oriols X.: Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation. IEEE Trans on ED, Vol. 50, no. 9, 2003, pp. 1830 – 1836. DOI 10.1109/TED.2003.815369

  13. Shore K.A., Kane D.M.: Quantum noise penalty in laser diode arrays. IEE Proc. - Optoelectronics, Vol. 150, no. 2, 2003, pp. 163 – 166. DOI 10.1049/ip-opt:20030455

  14. Shore K.A., Kane D.M.: Low quantum noise laser diodes. IEE Proc. - Optoelectronics, Vol. 148, no. 56, 2001, pp. 247 – 250. DOI 10.1049/ip-opt:20010795

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    Shot noise

  1. Altimiras C., Parlavecchio O., Joyez P., Vion D., Roche P., Esteve D., Portier F.: Dynamical Coulomb Blockade of Shot Noise. Physical Review Lett., Vol. 112, no. 23, 2014, Article # 236803 DOI 10.1103/PhysRevLett.112.236803

  2. Prokeova M., Dvorak J.: Statistics for Inhomogeneous Space-Time Shot-Noise Cox Processes. Methodology & Computing in Applied Probability, Vol. 16, no. 2, Special no. SI, 2014, pp. 433 – 449. DOI 10.1007/s11009-013-9324-0

  3. Iksanov A., Marynych A., Meiners M.: Limit Theorems for Renewal Shot Noise Processes with Eventually Decreasing Response Functions. Stochastic Processes & Their Applications, Vol. 124, no. 6, 2014, pp. 2132 – 2170. DOI 10.1016/j.spa.2014.02.007

  4. Li Jiaming, Luo Le, Carvell J., Cheng Ruihua, Lai Tianshu, Wang Zixin: Shot-Noise-Limited Optical Faraday Polarimetry with Enhanced Laser Noise Cancelling. Journal of Applied Physics, Vol. 115, no. 10, 2014, Article # 103101. DOI 10.1063/1.4867743

  5. Jedidi Wissem: Poisson Shot Noise Traffic Model and Approximation of Significant Functionals. Abstract & Applied Analysis, 2014, Article # 261568. http://dx.doi.org/10.1155/2014/261568

  6. Huang Huaping, Liu De, Zhang Hongmei, Kong Xiaojun: Electronic Transport and Shot Noise in Thue-Morse Sequence Graphene Superlattice. Journal of Applied Physics, Vol. 113, no. 4, 2013, pp. 043702-1 – 043702-6. DOI 10.1063/1.4788676

  7. Tan Z.B., Puska A., Nieminen T., Duerr F., Gould C., Molenkamp L.W., Trauzettel B., Hakonen P.J: Shot Noise in Lithographically Patterned Graphene Nanoribbons. Physical Review B, Vol. 88, no. 24, 2013, Article # 245415. DOI 10.1103/PhysRevB.88.245415

  8. Jang Jiwook, Dassios A.: A Bivariate Shot Noise Self-exciting Process for Insurance. Insurance Mathematics & Economics, Vol. 53, no. 3, 2013, pp. 524 – 532. DOI 10.1016/j.insmatheco.2013.08.003

  9. Pearce A.J., Cavaliere F., Mariani E.: Conductance and Shot Noise in Strained Bilayer Graphene. Journal of Physics: Condensed Matter, Vol. 25, no. 37, 2013, pp. 375301.1 – 375301.10. DOI 10.1088/0953-8984/25/37/375301

  10. Tikhonov E.S., Khrapai V.S., Shovkun D.V., Schuh D.: Finite-size Effect in Shot Noise in Hopping Conduction. JETP Lett., Vol. 98, no. 2, 2013, pp. 121 – 126. DOI 10.1134/S0021364013150150

  11. Babiker Sharief F.: Shot Noise in Resistively Coupled Single Tunnel Junctions. Solid-State Electronics, Vol. 85, 2013, pp. 43 – 47. DOI 10.1016/j.sse.2013.02.061

  12. Quinlan F., Fortier T.M., Jiang Haifeng, Diddams S.A.: Analysis of Shot Noise in the Detection of Ultrashort Optical Pulse Trains. Journal of the Optical Society of America B - Optical Physics, Vol. 30, no. 6, 2013, pp. 1775 – 1785. DOI 10.1364/JOSAB.30.001775

  13. Zhuang Jia Ning, Wang Jian: Conductance Fluctuation and Shot Noise in Disordered Graphene Systems, a Perturbation Expansion Approach. Journal of Applied Physics, Vol. 114, no. 6, 2013, pp 063708.1 – 063708.8. DOI 10.1063/1.4817885

  14. Logoteta D., Marconcini P., Macucci M.: Numerical Simulation of Shot Noise in Disordered Graphene. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578889

  15. Liu Zheng-Fang, Liu Nian-Hua, Wu Qing-Ping: Magnetoresistance and Shot Noise in Graphene-based Nanostructure with Effective Exchange Field. Journal of Applied Physics, Vol. 112, no. 12, 2012, Article # 123719. DOI 10.1063/1.4770494

  16. I.L. Ho, D.S. Chung, M.T. Lee, C.S. Wu, Y.C. Chang, C.D. Chen : Shot noise of multichannel transport in mesoscopic junction systems. J. Appl. Phys. Vol. 111, no 6, 2012, pp 064501 (7 pages) DOI 10.1063/1.3692805 http://jap.aip.org/resource/1/japiau/v111/i6/p064501_s1?isAuthorized=no

  17. Chang Bo, Liang Jiu-Qing: Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet. Chinese Phys. B, Vol. 20, no 1, 2011, pp 017307. DOI 10.1088/1674-1056/20/1/017307

  18. Kumar M., Smit R.H.M., van Ruitenbeek J.M., Tal O.: Inelastic scattering effects and electronic shot noise. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 376 – 380. DOI 10.1109/ICNF.2011.5994347

  19. Sayer R.A., Sunkook Kim, Franklin A.D., Mohammadi S., Fisher T.S.: Shot Noise Thermometry for Thermal Characterization of Templated Carbon Nanotubes. IEEE Trans. on Components and Packaging Technologies, vol. 33, no. 1, 2010, pp. 178 – 183. DOI 10.1109/TCAPT.2009.2038488

  20. Sekiguchi K, Arakawa T, Yamauchi Y, Chida K, Yamada M, Takahashi H, Chiba D, Kobayashi K, Ono T.: Observation of full shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions. Applied Physics Letters, Vol. 96, no 25, 2010, pp 252504 – 252504-3. DOI 10.1063/1.3456548

  21. Graffeuil J, Liman R.A, Muraro J.L, Llopis O.: Cyclostationary Shot-Noise Measurements in RF Schottky-Barrier Diode Detectors. IEEE Electron Device Letters, Vol. 31, no 1, 2010, pp 74 – 76. DOI 10.1109/LED.2009.2035339

  22. Khunkhao S, Umjaruan C, Thaworn A, Nuanloy S, Niemcharoen S, Ruangphanit A, Phongphanchanthra N, Sato K.: Shot noise behavior of planar Mo/n-Si/Mo photodetector structure in avalanche mode. Int. Conf. on Electrical Eng./Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010, pp 1137 – 1141. Print ISBN: 978-1-4244-5606-2

  23. P. J. Wheeler, J. N. Russom, K. Evans, N. S. King, D. Natelson : Shot Noise Suppression at Room Temperature in Atomic-Scale Au Junctions. Nano Lett., Vol. 10, no 4, 2010, pp 1287 – 1292 DOI:10.1021/nl904052r

  24. Yositake Takane : Nonuniversal Shot Noise in Disordered Quantum Wires with Channel-Number Imbalance. J. Phys. Soc. Jpn., Vol. 79, 2010, pp 104706 (4 pages) DOI 10.1143/JPSJ.79.104706

  25. Jeon J, Lee J, Kim J, Park C.H, Lee H, Oh H, Kang H.-K, Park B.-G, Shin H.: The first observation of shot noise characteristics in 10-nm scale MOSFETs. Symp. on VLSI Technology, 2009, pp 48 – 49. Print ISBN: 978-1-4244-3308-7

  26. Betti A, Fiori G, Iannaccone G.: Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors. Trans. on ED, Vol. 56, no 9, 2009, pp 2137 – 2143. DOI 10.1109/TED.2009.2026512

  27. Hoshino K, Zhang Deng, Nishimura T.H.: Reduction of photon shot noise using M-transform. IEEE Int. Symp. on Industrial Electronics (ISIE 2009), 2009, pp 560 – 564. DOI 10.1109/ISIE.2009.5217936

  28. Gong Yiyang, Guo Yong: Magnetically induced enhancement of shot noise in graphene-based structures. Journal of Applied Physics, Vol. 105, no 6, 2009, pp 063717 – 063717-4. DOI 10.1063/1.3103306

  29. Betti A, Fiori G, Iannaccone G.: Shot noise in quasi one-dimensional FETs. IEEE Int. Electron Devices Meeting (IEDM 2008), 2008, pp 1 – 4.
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  30. Bing Dong, Lei X.L, Horing N.J.M.: Robust Negative Differential Conductance and Enhanced Shot Noise in Transport Through a Molecular Transistor With Vibration Assistance. IEEE Sensors Journal, Vol. 8, no 6, 2008, pp 885 – 890. DOI 10.1109/JSEN.2008.923271

  31. Teng Chen, Madey J.M.J.: Effects of Electron Shot Noise and Quantum Field Fluctuations on the Photon Statistics of the Coherent Spontaneous Harmonic Radiation. IEEE Journal of Quantum Electronics, Vol. 44, no 3, 2008, pp 294 – 302. DOI 10.1109/JQE.2007.912464

  32. Rudolph M, Korndorfer F, Heymann P, Heinrich W.: Compact Large-Signal Shot-Noise Model for HBTs. Trans. on MTT, Vol. 56, no 1, 2008, pp 7 – 14. DOI 10.1109/TMTT.2007.911944

  33. Song W., Chong Y., Kim K.-T.: Setup of shot noise measurement in a tunnel junction for noise thermometry. Conf. on Precision Electromagnetic Measurements Digest (CPEM 2008), 2008, pp 138 – 139. DOI 10.1109/CPEM.2008.4574691

  34. Sayer R.A, Fisher T.S.: Shot noise thermometry with carbon nanotubes. 11th Intersociety Conf. on Thermal and Thermomec. Phenomena in Electronic Syst. (ITHERM 2008), 2008, pp 931 – 936. DOI 10.1109/ITHERM.2008.4544367

  35. Yan Cui, Guofu Niu, Rezvani A, Taylor S.S.: Measurement and Modeling of Drain Current Thermal Noise to Shot Noise Ratio in 90nm CMOS. IEEE Topical Meeting on Silicon Monolithic IC in RF Systems (SiRF 2008), 2008, pp 118 – 121. DOI 10.1109/SMIC.2008.36

  36. He Yuhui, Hou Danqiong, Han Ruqi: Spin-current shot noise in mesoscopic conductors. Journal of Applied Physics, Vol. 101, no 2, 2007, pp 023710 – 023710-7. DOI 10.1063/1.2430925

  37. Hui Li, Zhenqiang Ma, Guofu Niu: Transport shot noise models and NFmin comparison for SiGe HBTs under different operation configurations. Microwave Integrated Circuit Conf., 2007. EuMIC 2007. European , Vol. , no , pp 203-206, 8-10 Oct. 2007 DOI 10.1109/EMICC.2007.4412684

  38. Cho B, Itagaki T, Oshima C.: Record of the lowest frequency shot noise measurement below 10 Hz. Applied Physics Letters, Vol. 91, no 5, 2007, pp 051916 – 051916-3. DOI 10.1063/1.2767234

  39. Ang L.K, Wu L.: Shot Noise of High Current Electron Field Emission. IEEE 34th Int. Conf. on Plasma Science, (ICOPS 2007), 2007, pp 580. DOI 10.1109/PPPS.2007.4345886

  40. Zhu Rui, Guo Yong: Current shot noise characteristics in resonant tunneling step-barrier structures. Journal of Applied Physics, Vol. 102, no 8, 2007, pp 083706 – 083706-7. DOI 10.1063/1.2798515

  41. An Xing-Tao, Liu Jian-Jun: Shot noise of spin-dependent currents in ferromagnetic/semiconductor/ferromagnetic heterojunctions. Journal of Applied Physics, Vol. 102, no 12, 2007, pp 123706 – 123706-6. DOI 10.1063/1.2825405

  42. Rudolph M, Heymann P.: Comparative study of shot-noise models for HBTs. European Microwave Integrated Circuit Conf. (EuMIC 2007), 2007, pp 191 – 194. DOI 10.1109/EMICC.2007.4412681

  43. Zhu Rui, Guo Yong: Shot noise in the graphene-based double-barrier structures. Applied Physics Letters, Vol. 91, no 25, 2007, pp 252113-252113-3 DOI 10.1063/1.2825571

  44. Tempel M, Boeck G.: Shot-Noise Analysis in Circuits with Large Signal Excitations using Harmonic Balance Simulators. 13th IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS '06), 2006, pp 581 – 583. DOI 10.1109/ICECS.2006.379855

  45. Ridolfi A, Win M.Z.: Ultrawide bandwidth signals as shot noise: a unifying approach. IEEE Journal on Selected Areas in Communications, Vol. 24, no 4, 2006, pp 899 – 905. DOI 10.1109/JSAC.2005.863881

  46. Jagadish Venkataraman, Haenggi M, Collins O.: Shot Noise Models for Outage and Throughput Analyses in Wireless Ad Hoc Networks. IEEE Military Communications Conf. (MILCOM 2006), 2006, pp 1 – 7. DOI 10.1109/MILCOM.2006.302418

  47. Yuhui He, Danqiong Hou, Xiaoyan Liu, Ruqi Han: Spin-Current Shot Noise in Spin Transitors. 8th Int. Conf. on Solid-State and IC Technology (ICSICT '06), 2006, pp 1086 – 1088. DOI 10.1109/ICSICT.2006.306689

  48. Neureuther A. R, Pease R. F. W, Yuan L, Baghbani Parizi K, Esfandyarpour H, Poppe W. J, Liddle J. A, Anderson E. H.: Shot noise models for sequential processes and the role of lateral mixing. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, no 4, 2006, pp 1902 – 1908. DOI 10.1116/1.2218875

  49. Aghassi J., Thielmann A., Hettler M. H, Schon G.: Strongly enhanced shot noise in chains of quantum dots. Applied Physics Letters, Vol. 89, no 5, 2006, pp 052101 – 052101-3. DOI 10.1063/1.2260827

  50. Andersson S, Svensson C.: Direct experimental verification of shot noise in short channel MOS transistors. Electronics Letters, Vol. 41, no 15, 2005, pp 869 – 871. DOI 10.1049/el:20051474

  51. Spear J. D.: Shot noise in x-ray measurements with p-i-n diodes. Review of Scientific Instruments, Vol. 76, no 7, 2005, pp 076101 – 076101-3. DOI 10.1063/1.1947776

  52. Djuric I., Dong Bing, Cui H. L.: Super-Poissonian shot noise in the resonant tunneling due to coupling with a localized level. Applied Physics Letters, Vol. 87, no 3, 2005, pp 032105 – 032105-3. DOI 10.1063/1.1999020

  53. Roschier L., Heikkila T. T, Hakonen P.: Cyclostationary shot noise in mesoscopic measurements. Journal of Applied Physics, Vol. 96, no 10, 2004, pp 5927 – 5929. DOI 10.1063/1.1803103

  54. Gillingham D.R, Antonsen T.M. Jr.: Linear theory of shot noise in harmonic gyroklystrons and gyro-TWT amplifiers. IEEE Trans. on Plasma Science, Vol. 32, no 3, 2004, pp 987 – 993. DOI 10.1109/TPS.2004.827583

  55. Mallinson J.C.: Analogy between magnetic recording media noise and shot noise. IEEE Trans. on Magnetics, Vol. 40, no 5, 2004, pp 3407 – 3410.
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  56. McNeil B.W.J, Robb G.R.M, Poole M.W.: A numerical model of electron beam shot noise. Proc. of the Particle Accelerator Conf. (PAC 2003), Vol. 2, 2003, pp 950 – 952. DOI 10.1109/PAC.2003.1289559

  57. Pouyet V, Brown E.R.: Shot-noise reduction in multiple-quantum-well resonant tunneling diodes. Trans. on ED, Vol. 50, no 4, 2003, pp 1063 – 1068. DOI 10.1109/TED.2003.811414

  58. Krishnan R., Cahay M.: Transition from sub-Poissonian to super-Poissonian shot noise in planar cold cathodes. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, no 4, 2003, pp 1278 – 1285. DOI 10.1116/1.1575251

  59. Fiegna C.: Analysis of gate shot noise in MOSFETs with ultrathin gate oxides. IEEE Electron Device Letters, Vol. 24, no 2, 2003, pp 108 – 110. DOI 10.1109/LED.2002.807695

  60. Ilyasov Yu.P.: Shot noise and radio telescope sensitivity. 4th Int. Conf. on Antenna Theory and Techniques, Vol. 2, 2003, pp 648 – 650. DOI 10.1109/ICATT.2003.1238826

  61. Iannaccone G, Crupi F, Neri B, Lombardo S.: Theory and experiment of suppressed shot noise in stress-induced leakage currents. Trans. on ED, Vol. 50, no 5, 2003, pp 1363 – 1369. DOI 10.1109/TED.2003.812500

  62. Dallakyan S, Mazumdar S.: Sub-Poissonian shot noise in molecular wires. Applied Physics Letters, Vol. 82, no 15, 2003, pp 2488 – 2490. DOI 10.1063/1.1567805

  63. Gomila G, Cantalapiedra I. R, Reggiani L.: Unipolar transport and shot noise in metal–semiconductor–metal structures. Journal of Applied Physics, Vol. 93, no 1, 2003, pp 375 – 383. DOI 10.1063/1.1525863

  64. Ferrari G, Sampietro M, Bertuccio G, Gomila G, Reggiani L.: On the origin of shot noise in CdTe detectors. Applied Physics Letters, Vol. 83, no 12, 2003, pp 2450 – 2452. DOI 10.1063/1.1611648

  65. George P. K, Wu Y, White R. M, Murdock Ed, Tondra M.: Shot noise in low-resistance magnetic tunnel junctions. Applied Physics Letters, Vol. 80, no 4, 2002, pp 682 – 684. DOI 10.1063/1.1446210

  66. Moller J, Heinernann B, Herzel F.: An improved model for high-frequency noise in BJTs and HBTs interpolating between the quasi-thermal approach and the correlated-shot-noise model. Proc. of the 2002 Bipolar/BiCMOS Circuits and Technology Meeting, 2002, pp 228 – 231. DOI 10.1109/BIPOL.2002.1042924

  67. Manheimer W.M.: Uniform plasma model of shot noise in gyroklystrons. IEEE Trans. on Plasma Science, Vol. 29, no 4, 2001, pp 639 – 648. DOI 10.1109/27.940959

  68. Gomila G, Reggiani L, Rubi J. M.: Shot-noise suppression in Schottky barrier diodes. Journal of Applied Physics, Vol. 88, no 5, 2000, pp 3079 – 3081. DOI 10.1063/1.1288219

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Thermal noise

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