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NOISE in MOSFET

It will fluctuate”

(J.P Morgan, when asked what the stock market will do)

  1. Ioannidis E.G., Pflanzl W.C., Stueckler E., et al.: Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET. Solid-State Electronics, Vol. 126, Dec. 2016, pp. 158 – 162. DOI 10.1016/j.sse.2016.08.003

  2. Patel R., Friedman E.G., Raghavan P.: Power Noise in 14, 10, and 7 nm FinFET CMOS Technologies. IEEE Int. Symp on Circuits and Systems (ISCAS), 2016, pp. 3740. DOI 10.1109/ISCAS.2016.7527164

  3. Jeon Jongwook, Kim Yoon, Kang Myounggon: Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region. Semiconductor Science and Technology, Vol. 31, no. 6, 2016, Article # 065004. DOI 10.1088/0268-1242/31/6/065004

  4. Jeon Jongwook, Kang Myounggon: Shot noise effect on noise source and noise parameter of 10-nm-scale quasi-ballistic n-/p-type MOS devices. Japanese Journal of Applied Physics, Vol. 55, no. 5, 2016, Article # 054102. DOI 10.7567/JJAP.55.054102

  5. Jeon Jongwook, Kang Myounggon: Circuit Level Layout Optimization of MOS Transistor for RF and Noise Performance Improvements. IEEE Trans on ED, Vol. 63, no. 12, 2016, pp. 4674 – 4677. DOI 10.1109/TED.2016.2614275

  6. Park Chan Hyeong, Chung In-Young: Modeling of Electrolyte Thermal Noise in Electrolyte-Oxide-Semiconductor Field-Effect Transistors. J. of Semiconductor Technology & Science, Vol. 16, no. 1, 2016, pp. 106111. DOI 10.5573/JSTS.2016.16.1.106

  7. Kim Choong-Ki, Yu Chan Hak, Hur Jae, et al.: Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps. 2D Materials, Vol. 3, no. 1, 2016, Article # 015007. DOI 10.1088/2053-1583/3/1/015007

  8. Li Xuefei, Du Yuchen, Si Mengwei, et al.: Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale, Vol. 8, no. 6, 2016, pp. 35723578. DOI 10.1039/c5nr06647f

  9. Mavredakis N., Bucher M.: Compact Model for Variability of Low Frequency Noise due to Number Fluctuation Effect. Proc. of the European Solid-State Device Research Conf (ESSDERC), 2016, pp. 464467. DOI 10.1109/ESSDERC.2016.7599686

  10. Sharan Neha, Mahapatra Santanu: Compact noise modelling for common double-gate metal-oxide-semiconductor field-effect transistor adapted to gate-oxide-thickness asymmetry. IET Circuits, Devices & Systems, Vol. 10, no. 1, 2016, pp. 6267. DOI 10.1049/iet-cds.2015.0128

  11. Agarwal Harshit, Kushwaha Pragya, Gupta Chetan, et al.: Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs. Solid-State Electronics, Vol. 115, Part: A, 2016, pp. 3338. DOI 10.1016/j.sse.2015.10.002

  12. Karatsori T.A., Theodorou C.G., Mescot X., et al.: Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements. IEEE Trans on ED, Vol. 63, no. 8, 2016, pp. 32223228. DOI 10.1109/TED.2016.2583504

  13. Goswami Rupam, Bhowmick Brinda, Baishya Srimanta: Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter. Microelectronics J., Vol. 53, 2016, pp. 1624. DOI 10.1016/j.mejo.2016.04.009

  14. Fiorelli R., Peralias E.: Semi-empirical RF MOST model for CMOS 65 nm technologies: Theory, extraction method and validation. Integration - the VLSI Journal, Vol. 52, 2016, pp. 228236. DOI 10.1016/j.vlsi.2015.07.018

  15. Tai Ya-Hsiang, Chang Chun-Yi, Hsieh Chung-Lun: Effects of Illumination on the Noise Behavior of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors. J. of Display Technology, Vol. 12, no. 7, 2016, pp. 685689. DOI 10.1109/JDT.2016.2519045

  16. Jeong Chan-Yong, Kim Hee-Joong, Kim Dae-Hwan, et al.: Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors. IEEE ED Lett., Vol. 37, no. 6, 2016, pp. 739742. DOI 10.1109/LED.2016.2558204

  17. Noulis T.: MOSFET gate induced time domain noise simulation accuracy benchmarking. Electronics Lett., Vol. 52, no. 2, 2016, pp. 156 – 157. DOI 10.1049/el.2015.3278

  18. Chiang Te-Kuang: A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Double-Gate MOSFET Working on Subthreshold CMOS Logic Gates. IEEE Trans on ED, Vol. 63, no. 8, 2016, pp. 33543359. DOI 10.1109/TED.2016.2581826

  19. Liu Yuan, Liu Yurong, He Yujuan, et al.: Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology. J. of Semiconductors, Vol. 37, no. 6, 2016, Article # 064012. DOI 10.1088/1674-4926/37/6/064012

  20. Wang Lin-Lin, Peng Wu, Jiang Yu-Long: A Modified 1/f Noise Model for MOSFETs With Ultra-Thin Gate Oxide. IEEE ED Lett., Vol. 37, no. 5, 2016, pp. 537540. DOI 10.1109/LED.2016.2536680

  21. Imamoto Takuya, Ma Yitao, Muraguchi Masakazu, Endoh Tetsuo: Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60nm CMOS technology on 300mm wafer process. Japanese Journal of Applied Physics, Vol. 54, no. 4, Special no. SI, 2015, Article # 04DC11. DOI 10.7567/JJAP.54.04DC11

  22. Yu Panpan, Chen Bo, Gao Jianjun: Microwave noise modeling for MOSFETs. Int. J. of Numerical Modelling - Electronic Networks Devices & Fields, Vol. 28, no. 6, 2015, Special no. SI, pp. 639 – 648. DOI 10.1002/jnm.2061

  23. Olyaei Maryam, Litta Eugenio Dentoni, Hellstrom Per-Erik, et al.: Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs. IEEE ED Lett., Vol. 36, no. 12, 2015, pp. 13551358. DOI 10.1109/LED.2015.2494678

  24. Achour H., Cretu B., Simoen E., et al.: Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy. Solid-State Electronics, Vol. 112, 2015, pp. 16. DOI 10.1016/j.sse.2015.02.014

  25. Mahmutoglu A.G., Demir A.: Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified. IEEE Trans on CAS I : Regular Papers, Vol. 62, no. 4, 2015, pp. 929937. DOI 10.1109/TCSI.2015.2388834

  26. Kim Suna, Park Dae-Woong, Choi Kyoung-Young, et al.: MOSFET Characteristics for Terahertz Detector Application From On-Wafer Measurement. IEEE Trans on Terahertz Science and Technology, Vol. 5, no. 6, 2015, pp. 10681077. DOI 10.1109/TTHZ.2015.2487780

  27. Liu Yuan, Chen Hai-Bo, Liu Yu-Rong, et al.: Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide. Chinese Physics B, Vol. 24, no. 8, 2015, Article # 088503. DOI 10.1088/1674-1056/24/8/088503

  28. Si Mengwei, Conrad Nathan J., Shin Sanghoon, et al.: Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs. IEEE Trans on ED, Vol. 62, no. 11, 2015, pp. 35083515. DOI 10.1109/TED.2015.2433921

  29. Balestra F., Ghibaudo G., Jomaah J.: Modeling of low-frequency noise in advanced CMOS devices. Int. J. of Numerical Modelling - Electronic Networks Devices & Fields, Vol. 28, no. 6, Special no. SI, 2015, pp. 613627. DOI 10.1002/jnm.2052

  30. Goswami Rupam, Bhowmick Brinda, Baishya Srimanta: Electrical noise in Circular Gate Tunnel FET in presence of interface traps. Superlattices and Microstructures, Vol. 86, 2015, pp. 342354. DOI 10.1016/j.spmi.2015.07.064

  31. Chalkiadaki M.-A., Enz C.C.: RF Small-Signal and Noise Modeling Including Parameter Extraction of Nanoscale MOSFET From Weak to Strong Inversion. IEEE Trans on MTT, Vol. 63, no. 7, 2015, pp. 21732184. DOI 10.1109/TMTT.2015.2429636

  32. Chan L.H.K., Kiat Seng Yeo, Chew K.W.J., Shih Ni Ong: High-Frequency Noise Modeling of MOSFETs for Ultra Low-Voltage RF Applications. IEEE Trans on MTT, Vol. 63, no. 1, 2015, pp. 141154. DOI 10.1109/TMTT.2014.2371827

  33. Jazaeri F., Sallese J.-M.: Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs. IEEE Trans on ED, Vol. 62, no. 8, 2015, pp. 25932597. DOI 10.1109/TED.2015.2437954

  34. Wen Fang, Simoen E., Arimura H., Mitard J., Sioncke S., Mertens H., Mocuta A., Collaert N., Jun Luo, Chao Zhao, Voon-Yew Thean A., Claeys C.: Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs. IEEE Trans on ED, Vol. 62, no. 7, 2015, pp. 20782083. DOI 10.1109/TED.2015.2430367

  35. Ioannidis E.G., Theodorou C.G., Karatsori T.A., Haendler S., Dimitriadis C.A., Ghibaudo G.: Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology. IEEE Trans on ED, Vol. 62, no. 5, 2015, pp. 15741579. DOI 10.1109/TED.2015.2411678

  36. Spathis C., Birbas A., Georgakopoulou K.: Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors. AIP Advances, Vol. 5, no. 8, 2015, Article # 087114. DOI 10.1063/1.4928424

  37. Po-Chin Huang, Chen J.F., Tsai S.C., San Lein Wu, Kai-Shiang Tsai, Tsung Hsien Kao, Yean-Kuen Fang, Chien-Ming Lai, Chia-Wei Hsu, Yi-Wen Chen, Cheng O.: Impact of Uniaxial Strain on Random Telegraph Noise in High-k /Metal Gate pMOSFETs. IEEE Trans on ED, Vol. 62, no. 3, 2015, pp. 988993. DOI 10.1109/TED.2015.2391298

  38. Yong Xu, Chuan Liu, Amegadez P.S.K., Gi-Seong Ryu, Huaixin Wei, Balestra F., Ghibaudo G., Yong-Young Noh: On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective. IEEE ED Lett., Vol. 36, no. 10, 2015, pp. 10401043. DOI 10.1109/LED.2015.2467164

  39. Hongyu He, Xueren Zheng, Shengdong Zhang: Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise. IEEE ED Lett., Vol. 36, no. 10, 2015, pp. 10561059. DOI 10.1109/LED.2015.2469723

  40. Giusi G., Giordano O., Scandurra G., Calvi S., Fortunato G., Rapisarda M., Mariucci L., Ciofi C.: Evidence of Correlated Mobility Fluctuations in p-Type Organic Thin-Film Transistors. IEEE ED Lett., Vol. 36, no. 4, 2015, pp. 390392. DOI 10.1109/LED.2015.2400472

  41. Rumyantsev S.L., Chenglong Jiang, Samnakay R., Shur M.S., Balandin A.A.: 1/f Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures. IEEE ED Lett., Vol. 36, no. 5, 2015, pp. 517519. DOI 10.1109/LED.2015.2412536

  42. Hongyu He, Xueren Zheng, Shengdong Zhang: 1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime. IEEE ED Lett., Vol. 36, no. 2, 2015, pp. 156158. DOI 10.1109/LED.2014.2378251

  43. Weifeng Zhou, Liang Zhou, Liang Lin, Wen-Yan Yin, Jun-Fa Mao: Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses. IEEE Trans on EMC, Vol. 56, no. 5, 2014, pp. 11781184. DOI 10.1109/TEMC.2014.2314304

  44. Ioannidis E.G., Theodorou C.G., Haendler S., Dimitriadis C.A., Ghibaudo G.: Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices. Electronics Lett., Vol. 50, no. 19, 2014, pp. 13931395. DOI 10.1049/el.2014.1837

  45. Mingxiang Wang, Ming Wang: A New Model for the 1/f Noise of Polycrystalline Silicon Thin-Film Transistors. IEEE Trans on ED, Vol. 61, no. 9, 2014, pp. 32583264. DOI 10.1109/TED.2014.2336250

  46. Ming-Jer Chen, Kong-Chiang Tu, Huan-Hsiung Wang, Chuan-Li Chen, Shiou-Yi Lai, You-Sheng Liu: A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETs. IEEE Trans on ED, Vol. 61, no. 7, 2014, pp. 24952502. DOI 10.1109/TED.2014.2323259

  47. Theodorou C.G., Ioannidis E.G., Andrieu F., Poiroux T., Faynot O., Dimitriadis C.A., Ghibaudo G.: Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs. IEEE Trans on ED, Vol. 61, no. 4, 2014, pp. 11611167. DOI 10.1109/TED.2014.2307201

  48. Delker C.J., Yunlong Zi, Chen Yang, Janes D.B.: Current and Noise Properties of InAs Nanowire Transistors With Asymmetric Contacts Induced by Gate Overlap. IEEE Trans on ED, Vol. 61, no. 3, 2014, pp. 884889. DOI 10.1109/TED.2013.2296298

  49. Smit G.D.J., Scholten A.J., Pijper R.M.T., Tiemeijer L.F., van der Toorn R., Klaassen D.B.M.: RF-Noise Modeling in Advanced CMOS Technologies. IEEE Trans on ED, Vol. 61, no. 2, 2014, pp. 245254. DOI 10.1109/TED.2013.2282960

  50. Tsung-Hsien Kao, San-Lein Wu, Chung-Yi Wu, Yean-Kuen Fang, Bo-Chin Wang, Po Chin Huang, Chien-Ming Lai, Chia-Wei Hsu, Yi-Wen Chen, Cheng O., Shoou-Jinn Chang: Impact of Aluminum Ion Implantation on the Low Frequency Noise Characteristics of Hf-Based High-k /Metal Gate pMOSFETs. IEEE ED Lett., Vol. 35, no. 9, 2014, pp. 954956. DOI 10.1109/LED.2014.2336866

  51. Sang-Hyun Lee, Ye-Ram Kim, Jae-Ho Hong, Eui-Young Jeong, Jun-Sik Yoon, Chang-Ki Baek, Dong-Won Kim, Jeong-Soo Lee, Yoon-Ha Jeong: Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer. IEEE ED Lett., Vol. 35, no. 7, 2014, pp. 702704. DOI 10.1109/LED.2014.2323255

  52. Wenhu Liu, Padovani A., Larcher L., Raghavan N., Kin Leong Pey: Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs. IEEE ED Lett., Vol. 35, no. 2, 2014, pp. 157159. DOI 10.1109/LED.2013.2295923

  53. Ya-Hsiang Tai, Chun-Yi Chang, Chung-Lun Hsieh, Yung-Hsuan Yang, Wei-Kuang Chao, Huan-Ean Chen: Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors. IEEE ED Lett., Vol. 35, no. 2, 2014, pp. 229231. DOI 10.1109/LED.2013.2291565

  54. Suman Datta, Huichu Liu, Vijaykrishnan Narayanan: Tunnel FET technology: A reliability perspective. Microelectronics Reliability, Vol. 54, no. 5, 2014, pp. 861874. DOI10.1016/j.microrel.2014.02.002

  55. Wei Feng, Chun Meng Dou, Niwa M., Yamada K., Ohmori K.: Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias. IEEE ED Lett., Vol. 35, no. 1, 2014, pp. 35. DOI 10.1109/LED.2013.2288981

  56. Ghatak Subhamoy, Mukherjee Sumanta, Jain Manish, et al.: Microscopic origin of low frequency noise in MoS2 field-effect transistors. APL Materials Vol. 2, no. 9, 2014, Article # 092515. DOI 10.1063/1.4895955

  57. Achour H., Cretu B., Routoure J.-M., et al.: In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature. Solid-State Electronics, Vol. 98, 2014, pp. 12 – 19. DOI 10.1016/j.sse.2014.04.001

  58. Pandey Rahul, Rajamohanan Bijesh, Liu Huichu, Narayanan Vijaykrishnan, Datta Suman: Electrical Noise in Heterojunction Interband Tunnel FETs. IEEE Trans on ED, Vol. 61, no. 2, Special Issue, 2014, pp. 552 – 560. DOI 10.1109/TED.2013.2293497

  59. Antonopoulos A., M. Bucher, K. Papathanasiou, N. Makris, N. Mavredakis, Rupendra Kumar Sharma, P. Sakalas, M. Schroter: Modeling of high-frequency noise of silicon CMOS transistors for RFIC design. Int. J. of Numerical Modelling - Electronic Networks Devices & Fields, Vol. 27, no. 5-6, 2014, pp. 802 – 811. DOI 10.1002/jnm.1959

  60. Loo X.S., Yeo K.S., Chew K.W.J.: THRU-Based Cascade De-embedding Technique for On-Wafer Characterization of RF CMOS Devices. IEEE Trans on ED, Vol. 60, no. 9, 2013, pp. 2892 – 2899. DOI 10.1109/TED.2013.2275197

  61. Mahmud M.I., Celik-Butler Z., Pinghai Hao, Srinivasan P., Fan-Chi Hou, Xu Cheng, Amey B.L., Pendharkar S.: A Physics-Based Analytical 1/f Noise Model for RESURF LDMOS Transistors. IEEE Trans on ED, Vol. 60, no. 2, 2013, pp 677 – 683. DOI 10.1109/TED.2012.2226178

  62. dos Santos S.D., Nicoletti T., Martino J.A., Aoulaiche M., Veloso A., Jurczak M., Simoen E., Claeys C.: On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Trans on ED, Vol. 60, no. 1, 2013, pp 444 – 450. DOI 10.1109/TED.2012.2227749

  63. Chuan Xu, Banerjee K.: Physical Modeling of the Capacitance and Capacitive Coupling Noise of Through-Oxide Vias in FDSOI-Based Ultra-High Density 3-D ICs. IEEE Trans on ED, Vol. 60, no. 1, 2013, pp 123 – 131. DOI 10.1109/TED.2012.2227966

  64. Kuo-Liang Yeh, Jyh-Chyurn Guo: Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs. IEEE Trans on ED, Vol. 60, no. 1, 2013, pp 109 – 116. DOI 10.1109/TED.2012.2228196

  65. Mavredakis N., Bucher M., Friedrich R., Bazigos A., Krummenacher F., Sallese J., Gneiting T., Pflanzl W., Seebacher E.: Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs. IEEE Trans on ED, Vol. 60, no. 2, 2013, pp 670 – 676. DOI 10.1109/TED.2012.2230329

  66. Cher Xuan Zhang, En Xia Zhang, Fleetwood D.M., Schrimpf R.D., Dhar S., Sei-Hyung Ryu, Xiao Shen, Pantelides S.T.: Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs. IEEE ED Lett., Vol. 34, no. 1, 2013, pp 117 – 119. DOI 10.1109/LED.2012.2228161

  67. Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Cheng O., Po Chin Huang: Comparison of the Trap Behavior Between ZrO2 and HfO2 Gate Stack nMOSFETs by 1/f Noise and Random Telegraph Noise. IEEE ED Lett., Vol. 34, no. 2, 2013, pp 151 – 153. DOI 10.1109/LED.2012.2226698

  68. Amoroso S.M., Compagnoni C.M., Ghetti A., Gerrer L., Spinelli A.S., Lacaita A.L., Asenov A.: Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State. IEEE ED Lett., Vol. 34, no. 5, 2013, pp 683 – 685. DOI 10.1109/LED.2013.2250477

  69. Wahl R.E., Wang F., Chung H.E., Kunnen G.R., Yip S., Lee E.H., Pun E.Y.B., Raupp G.B., Allee D.R., Ho J.C.: Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors. IEEE ED Lett., Vol. 34, no. 6, 2013, pp 765 – 767. DOI 10.1109/LED.2013.2250896

  70. Shih Chang Tsai, San Lein Wu, Bo Chin Wang, Shoou Jinn Chang, Che Hua Hsu, Chih Wei Yang, Chien Ming Lai, Chia Wei Hsu, Cheng O., Po Chin Huang, Chen J.F.: Low-Frequency Noise Characteristics for Various ZrO2 -Added HfO2 -Based 28-nm High-k /Metal-Gate nMOSFETs. IEEE ED Lett., Vol. 34, no. 7, 2013, pp 834 – 836. DOI 10.1109/LED.2013.2261858

  71. Xu Y., Liu C., Scheideler W., Li S., Li W., Lin Y.-F., Balestra F., Ghibaudo G., Tsukagoshi K.: Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise. IEEE ED Lett., Vol. 34, no. 10, 2013, pp 1298 – 1300. DOI 10.1109/LED.2013.2277613

  72. Kazakov Kirill A.: A case study on the scaling of 1/f noise: La2/3Sr1/3MnO3 Thin films. Journal of Applied Physics, Vol. 113, no. 12, 2013, pp 094901-1 – 094901-4.
    DOI 10.1063/1.4795603

  73. Antonopoulos A., M. Bucher, K. Papathanasiou, N. Mavredakis, N. Makris, R. K. Sharma, P. Sakalas, M. Schroter: Small-Signal and Thermal Noise Compact Modelling at High Frequencies. IEEE Trans on ED, Vol. 60, no. 11, 2013, pp. 3726 – 3733. DOI 10.1109/TED.2013.2283511

  74. Antonopoulos A., M. Bucher, K. Papathanasiou, N. Makris, R. K. Sharma, P. Sakalas, M. Schroter: CMOS RF Noise, Scaling, and Compact Modeling for RFIC Design. Proc. IEEE RFIC Symp. (RFIC), 2013, pp. 53 – 56. DOI 10.1109/RFIC.2013.6569520

  75. M. J. Martin, E. Pascual, R. Rengel: RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs. Solid-State Electronics, Vol. 73, 2012, pp 64 – 73. DOI 10.1016/j.sse.2012.04.027

  76. Tagro Y., des Etangs-Levallois A., Lecavelier, Poulain L., Lepilliet S., Gloria D., Raynaud C., Dubois E., Danneville F.: High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012, pp. 89 – 92. DOI 10.1109/SiRF.2012.6160147

  77. Simoen E., de Andrade M. G. C., Aoulaiche M., Collaert N., Claeys C.: Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells. IEEE Trans. on ED, Vol. 59, no. 5, 2012, pp. 1272 – 1278. DOI 10.1109/TED.2012.2186815

  78. Kim Joo-Hyung, Kim Jung-Joo, Lee Kyu-Ok, Lee Chang-Eun, Lee Jong-Ho, Kim Dong-Seok, Kim Nam-Joo, Yoo Kwang-Dong: Effect of arsenic and phosphorus doping on polysilicon resistor noise and TCR. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012, pp. 121 – 124. DOI 10.1109/SiRF.2012.6160161

  79. Tsukuda M., Kawakami K., Omura I.: Scattering parameter approach to power MOSFET design for EMI. IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2012, pp. 181 – 184. DOI 10.1109/ISPSD.2012.6229053

  80. Rengel R., Martín M. J., Danneville F.: Microscopic modelling of RF noise in Laterally Asymmetric Channel MOSFETs. IEEE Electron Device Lett., Vol. 32, no. 1, 2011, pp. 72 – 74. DOI 10.1109/LED.2010.2082488

  81. Ohmori K., Hettiarachchi R., Feng W., Matsuki T., Yamada K.: Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 321 – 324. DOI 10.1109/ICNF.2011.5994332

  82. Rumyantsev S.L., M.S. Shur, M.E. Levinshtein, P.A. Ivanov, J.W. Palmour, A.K. Agarwal, S. Dhar: Si-like low-frequency noise characteristics of 4H-SiC MOSFETs. Semicond. Sci. Techn., Vol. 26, no. 8, 2011, Article # 085015, (5 pages). DOI 10.1088/0268-1242/26/8/085015

  83. Ge Tan, Chih-Hung Chen, Bigchoug Hung, Peiming Lei, Chune-Sin Yeh: Channel thermal noise and its scaling impact on deep sub-100nm MOSFETs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 356 – 359. DOI 10.1109/ICNF.2011.5994342

  84. Marinov O., Deen M.J.: Frozen noise origin of temporal low-frequency noise in electronic devices. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 158 – 161. DOI 10.1109/ICNF.2011.5994288

  85. ElHusseini J., Martinez F., Armand J., Bawedin M., Valenza M., Pascal F., Ritzenthaler R., Lime F., Iniguez B., Faynot O.: Low frequency noise modeling of SOI MOSFETs using Green's function approach. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 348 – 351. DOI 10.1109/ICNF.2011.5994339

  86. Rodriguez A.L., Jimenez Tejada J.A., Gonzalez M.M., Planes M.R., Varo P.L., Godoy A.: Study of 1/f and generation-recombination noise in four gate transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 283 – 286. DOI 10.1109/ICNF.2011.5994322

  87. Pascual E., Rengel R., Martin M.J.: Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 230 – 233. DOI 10.1109/ICNF.2011.5994310

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