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NOISE in MESFET

A reasonable probability is the only certainty”

 (E.W. Howe)

  1. Marinkovic Z., Pronic-Rancic O., Markovic V.: New neural method for bias dependent noise modelling of microwave transistors. Journal of Communications Technology and Electronics, Vol. 59, no. 11, 2014, pp. 1303 – 1309. DOI 10.1134/S1064226914110114

  2. Yoon Ki-Cheol, Lee Jong-Chul: A stable low noise and high gain dual-band active band-pass filter with GaAs-MESFET using CRLH metamaterial. Microwave & Optical Techn. Lett., Vol. 56, no. 9, 2014, pp. 1985 – 1988. DOI 10.1002/mop.28509

  3. Ramezani Z., Orouji Ali A., Keshavarzi P.: A novel double-recessed 4H-SiC MESFET using scattering the electric field for high power and RF applications. Physica E-Low-Dimensional Systems & Nanostructures, Vol. 59, 2014, pp. 202 – 209. DOI 10.1016/j.physe.2014.01.002

  4. Orouji Ali A., Ramezani Z., Keshavarzi P., Aminbeidokhti A: A novel high frequency SOI MESFET by modified gate capacitances. Superlattices and Microstructures, Vol. 61, 2013, pp. 69 – 80. DOI 10.1016/j.spmi.2013.06.001

  5. Prameela B., Jagadeesh K.P.: Design of a Mesfet based Low Noise Amplifier with Improved Noise Figure for Low Power Wireless Applications in 2-3 GHz. 3rd Int. Conf on Advances in Computing & Communications (ICACC), 2013, pp. 257 – 260. DOI 10.1109/ICACC.2013.112

  6. Ki-Cheol Yoon, Jaegook Lee, Hyunwook Lee, Jong-Chul Lee: Low noise and high gain dual-band active band-pass filter with GaAs MESFET using CRLH metamaterial. 3rd Asia Pacific Microwave Conference (APMC)-Proceedings, 2013, pp. 697 – 699. DOI 10.1109/APMC.2013.6694959

  7. Ulansky V., Ben Suleiman S.F.: A low phase-noise GaAs FET/BJT voltage-controlled oscillator for microwave applications. Int. Symp. on Physics & Eng. of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013, pp. 407 – 414. DOI 10.1109/MSMW.2013.6622100

  8. Liang Lin, Liang Zhou, Wen-Yan Yin, Lin-Juan Huang: Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band GaAs MESFET-based low noise amplifier(LNA). IEEE Int. Symp. on Electromagnetic Compatibility (EMC), 2012, pp. 329 – 333 DOI 10.1109/ISEMC.2012.6351827

  9. Shanta A. S., Hossain D. B., Huq T. R., Mahmood R., Islam M. S.: Analytical model of GaN MESFETs for high power and microwave frequency applications. Int. Symp. on Instrum. & Measurement, Sensor Network and Automation (IMSNA), Vol. 1, 2012, pp. 28 – 31. DOI 10.1109/MSNA.2012.6324509

  10. Chao Zhang, Guicui Fu, Hantian Gu, Dong Zhang: Simulation of temperature effects on GaAs MESFET based on physical model. IEEE Conf. on Prognostics and System Health Management (PHM), 2012, pp. 1 – 6. DOI 10.1109/PHM.2012.6228796

  11. Jing Jin, Meng-Lin Zhai, Wen-Yan Yin: Susceptibility analysis of wideband RF receiving channel in the presence of an electromagnetic pulse (EMP). Asia-Pacific Symp. on Electromagnetic Compatibility (APEMC), 2012, pp. 433 – 436. DOI 10.1109/APEMC.2012.6237976

  12. Torkhov N.A., Bozhkov V.G., Genneberg V.A., Petrov I.V.: Engineering of low-frequency and low-noise MEFSET average-capacity with regard for fractal properties of gallium arsenide epitaxial layers. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2011, pp. 697 – 698. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6069113&isnumber=6068772

  13. Konczakowska A., Cichosz J., Dokupil D., Flisikowski P., Szewczyk A., Stawarz-Graczyk B.: The low frequency noise behaviour of SiC MESFETs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 444 – 447. DOI 10.1109/ICNF.2011.5994427

  14. Danneville F.: Microwave Noise and FET Devices. IEEE Microwave Magazine, Vol. 11, no. 6, 2010, pp. 53 – 60. DOI 10.1109/MMM.2010.937731

  15. Islam M.R., Zahirul Alam A.H.M., Khan S., Shabana A.A.A.: Design of a low noise amplifier with GaAs MESFET at ku_Band. Int. Conf. on Computer and Communication Engineering (ICCCE), 2010, pp. 1 – 5. DOI 10.1109/ICCCE.2010.5556786

  16. Shestakov A.K., Zhuravlev K.S., Arykov V.S., Kagadei V.A.: Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET). IEEE Russia School and Seminar on Fund. Problems of Micro/Nanosystems Technologies (MNST), 2010, pp. 33 – 36. DOI 10.1109/MNST.2010.5687132

  17. Marinkovic Z., Rancic O.P., Markovic V.: Hybrid PKI empirical-neural bias dependent noise model of microwave transistors. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), 2009, pp. 44 – 47. DOI 10.1109/TELSKS.2009.5339493

  18. Freundorfer A.P., Bijumon P.V., Sayer M.: Integrated on-chip Ba2Ti9O20 dielectric resonator oscillator in GaAs technology. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2009, pp. 1105 – 1108. DOI 10.1109/MWSYM.2009.5165894

  19. Hamidi E., Mohammad-Taheri M., Moradi G.: Improvements in the Noise Theory of the MMIC Distributed Amplifiers. IEEE Trans on MTT, Vol. 56, no. 8, 2008, pp. 1797 – 1806. DOI 10.1109/TMTT.2008.927310

  20. Weatherspoon M.H., Langoni D.: Accurate and Efficient Modeling of FET Cold Noise Sources Using ANNs. IEEE Trans on Instr. & Meas., Vol. 57, no. 2, 2008, pp. 432 – 437. DOI 10.1109/TIM.2007.909958

  21. Sancho S., Ramirez F., Suarez A.: Analysis and reduction of the oscillator phase noise from the variance of the phase deviations, determined with harmonic balance. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2008, pp. 1449 – 1452. DOI 10.1109/MWSYM.2008.4633052

  22. Brehm G.E.: Early MMIC developments at Texas Instruments. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2008, pp. 823 – 826. DOI 10.1109/MWSYM.2008.4632959

  23. Resca D., Santarelli A., Raffo A., Cignani R., Vannini G., Filicori F., Schreurs D.M.M.-R.: Scalable Nonlinear FET Model Based on a Distributed Parasitic Network Description. IEEE Trans on MTT, Vol. 56, no 4, 2008, pp 755 – 766. DOI 10.1109/TMTT.2008.918153

  24. Weatherspoon M.H., Langoni D.: Accurate and Efficient Modeling of FET Cold Noise Sources Using ANNs. IEEE Trans on Instr. & Meas., Vol. 57, no. 2, 2008, pp. 432 – 437. DOI 10.1109/TIM.2007.909958

  25. Marinkovic Z., Pronic Rancic O., Markovic V.: Application of Artificial Neural Networks in Noise Wave Modeling of DG MESFETs. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), 2007, pp. 283 – 286. DOI 10.1109/TELSKS.2007.4375992

  26. Gromov D.V., Polevich S.A.: Effects of Powerful Pulsed Microwave Electromagnetic Influence in Low Noise Amplifiers. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2007, pp. 659 – 660. DOI 10.1109/CRMICO.2007.4368891

  27. Hilborn I., Freundorfer A.P., Show J., Keller M.G.: Design of a Single Chip GaAs MESFET Dielectric Resonator Oscillator at 26 GHz. Canadian Conf. on Electrical and Computer Eng. (CCECE), 2007, pp. 671 – 674. DOI 10.1109/CCECE.2007.172

  28. Breitbarth J., Pajic S., Wang N., Popovic Z.: Additive Phase Noise in Linear and High-Efficiency X-Band Power Amplifiers. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2006, pp. 1871 – 1874. DOI 10.1109/MWSYM.2006.249779

  29. Zuo-Min Tsai, Kuo-Jung Sun, Vendelin G.D., Huei Wang: A new feedback method for power amplifier with unilateralization and improved output return loss. IEEE Trans on MTT, Vol. 54, no. 4, 2006, pp. 1590 – 1597. DOI 10.1109/TMTT.2006.871347

  30. Sanabria C., Chakraborty A., Hongtao Xu, Rodwell M.J., Mishra U.K., York R.A.: The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs. IEEE ED Lett., Vol. 27, no. 1, 2006, pp. 19 – 21. DOI 10.1109/LED.2005.860889

  31. Zadeh A.R., Nikmehr S.: Noise Considerations in Cascaded Single-Stage Distributed Amplifiers. Int. Conf. on Electrical and Computer Engineering (ICECE), 2006, pp. 92 – 95. DOI 10.1109/ICECE.2006.355298

  32. Jindal R.P.: Compact Noise Models for MOSFETs. IEEE Trans on ED, Vol. 53, no. 9, 2006, pp. 2051 – 2061. DOI 10.1109/TED.2006.880368

  33. Marinkovic Z., Pronic-Rancic O., Markovic V.: Efficient ANN based noise modeling of microwave FETs against temperature. IEEE Mediterranean Electrotechnical Conf (MELECON), 2006, pp. 153 – 156. DOI 10.1109/MELCON.2006.1653059

  34. Bertazzi F., Bonani F., Conte G., Guerrieri S.D., Ghione G.: Physics-based Mixer Noise Simulation. Int. Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2006, pp. 102 – 105. DOI 10.1109/INMMIC.2006.283520

  35. Jevtic M.M., Hadzi-Vukovic J.: Low Frequency Noise of GaAs MESFET Degraded in ESD Test. Int. Conf on Microelectronics (ICM), 2006, pp. 532 – 535. DOI 10.1109/ICMEL.2006.1651020

  36. Jianjun Gao, Boeck G.: Relationships between common source, common gate, and common drain FETs. IEEE Trans on MTT, Vol. 53, no. 12, 2005, pp. 3825 – 3831. DOI 10.1109/TMTT.2005.859863

  37. Hashemi A., Abdipour A., Fassihi A.: A new approach to distributed modeling of MESFETs. Proc. Asia-Pacific Microwave Conf. (APMC), Vol. 2, 2005, pp. 4 DOI 10.1109/APMC.2005.1606399

  38. Marinkovic Z., Pronic O., Markovic V., Randelovic J.: Bias dependent scalable noise models of MESFETs/HEMTs based on neural networks. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), Vol. 2, 2005, pp. 377 – 380. DOI 10.1109/TELSKS.2005.1572131

  39. Moreira C.P., Kerherve E., Jarry P., Belot D., Filho H.T.: Fully-integrated dual-standard BiFET low-noise amplifier for DCS1800/WCDMA applications. SBMO/IEEE MTT-S Int.Microwave & Optoelectronics Conference (IMOC), 2005, pp. 32 – 37. DOI 10.1109/IMOC.2005.1580057

  40. Chien-Chang Huang, Han-Ting Pai, Kuan-Yu Chen: Analysis of microwave MESFET power amplifiers for digital wireless communications systems. IEEE Trans on MTT, Vol. 52, no. 4, 2004, pp. 1284 – 1291. DOI 10.1109/TMTT.2004.825646

  41. Anderson R.J., Spann J., Yang J., Thornton T.J.: The 1/f noise characteristics of a Schottky Junction Transistor: an ultra-low power, radiation hardened sub-threshold MESFET. Proc. IEEE Aerospace Conf., Vol. 4, 2004, pp. 2431 – 2436. DOI 10.1109/AERO.2004.4620172

  42. Romisch S., Weiss M.D.: Experimental investigation of phase noise in high-efficiency class-E amplifiers. Proc. of IEEE Int. Frequency Control Symp., 2004, no., pp. 718 – 724. DOI 10.1109/FREQ.2004.1418553

  43. Heng-Chia Chang: Analysis of coupled phase-locked loops with independent oscillators for beam control active phased arrays. IEEE Trans on MTT, Vol. 52, no. 3, 2004, pp. 1059 – 1066. DOI 10.1109/TMTT.2004.823590

  44. Chakrabarti P., Tiwari B.N., Kumar S.: Noise behavior of an optically controlled GaAs MESFET. Journal of Lightwave Technology, Vol. 22, no. 2, 2004, pp. 534 – 542. DOI 10.1109/JLT.2003.822674

  45. Pronic O., Mitic G., Randelovic J., Markovic V.: Procedure for accurate noise modelling of microwave FETs against temperature. Electronics Lett., Vol. 40, no 24, 2004, pp 1551 – 1553. DOI 10.1049/el:20046718

  46. Wu Lu, Kumar V., Piner E.L., Adesida I.: DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration. IEEE Transactions on ED, vol. 50, no. 4, 2003, pp. 1069 – 1074. DOI 10.1109/TED.2003.812083

  47. Tzeng S. Y., Cich M. J., Zhao R., Feick H., Weber E. R.: Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs. Applied Physics Letters, vol. 82, no. 7, 2003, pp.1063 – 1065. DOI 10.1063/1.1555710

  48. P. Chakrabarti, Badri Nath Tiwari, Suman Kumar: Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies. SPIE Digital Library, Optical Engineering, Vol 42, no 2, 2003, pp. 447. DOI 10.1117/1.1532332

  49. Ramirez F., de Cos M.E., Suarez A.: Nonlinear analysis tools for the optimized design of harmonic-injection dividers. IEEE Trans on MTT, Vol. 51, no. 6, 2003, pp. 1752 – 1762. DOI 10.1109/TMTT.2003.812579

  50. Heng-Chia Chang: Phase noise in self-injection-locked oscillators - theory and experiment. IEEE Trans on MTT, Vol. 51, no. 9, 2003, pp. 1994 – 1999. DOI 10.1109/TMTT.2003.815872

  51. Ahmed M.M.: An improved method to estimate intrinsic small signal parameters of a GaAs MESFET from measured dc characteristics. IEEE Trans on ED, Vol. 50, no.11, 2003, pp. 2196 – 2201. DOI 10.1109/TED.2003.818391

  52. Yan Chen, Zhizhang Chen: A dual-gate FET subharmonic injection-locked self-oscillating active integrated antenna for RF transmission. IEEE Microwave & Wireless Comp. Lett., Vol. 13, no. 6, 2003, pp. 199 – 201. DOI 10.1109/LMWC.2003.814093

  53. Iqbal M.A., Khan S.H.: Generation-recombination noise characteristics of GaAs MESFETs. Proc. of IEEE Int. Multi Topic Conference (INMIC), 2003, pp. 192 – 196. DOI 10.1109/INMIC.2003.1416694

  54. Zolper J.C.: Status, challenges, and future opportunities for compound semiconductor electronics. IEEE Gallium Arsenide Integrated Circuit Symp. Technical Digest (GaAs IC), 2003, pp. 3 – 6. DOI 10.1109/GAAS.2003.1252350

  55. Brauner T., Kung R., Vogt R., Bachtold W.: 5-6 GHz low-noise active antenna array for multi-dimensional channel-sounding. SBMO/IEEE MTT-S Int.Microwave & Optoelectronics Conference (IMOC), Vol. 1, 2003, pp. 297 – 301. DOI 10.1109/IMOC.2003.1244874

  56. Madureira M.A.M., Monteiro P.M.P., Aguiar R.L., Violas M., Gloanec M., Leclerc E., Lefebvre B.: High gain GaAs 10 Gbps transimpedance amplifier with integrated bondwire effects. IEEE Int. Symp on Circuits and Systems (ISCAS), Vol. 2, 2003, pp. II-173 – II-176. DOI 10.1109/ISCAS.2003.1205924

  57. Byunghoo Jung, Gopinath A., Harjani R.: A novel noise optimization design technique for radio frequency low noise amplifiers. IEEE Int. Symp on Circuits and Systems (ISCAS), Vol. 1, 2003, pp. I-209 – I-212. DOI 10.1109/ISCAS.2003.1205537

  58. Ahmed M.M.: Simulated I-V characteristics of non-uniformly doped microwave GaAs MESFET's. IEEE Int. Conf. on Vacuum Electronics (IVEC), 2003, pp. 239. DOI 10.1109/IVEC.2003.1286274

  59. Pantisano L., Cheung K. P.: Origin of microwave noise from an n-channel metal–oxide–semiconductor field effect transistor. Journal of Applied Physics, vol. 92, no. 11, 2002, pp. 6679 – 6683. DOI 10.1063/1.1518763

  60. Moradi G., Abdipour A.: A simplified noise modeling of mm-wave FETs. Int. Conf on Microwave and Millimeter Wave Technology (ICMMT), 2002, pp. 312 – 314. DOI 10.1109/ICMMT.2002.1187699

  61. Krasilnikov S.V.: High-stable low-noise microwave oscillator. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2002, pp. 123- 124 DOI 10.1109/CRMICO.2002.1137171

  62. Kanaya K., Kawakami K., Hisaka T., Ishikawa T., Sakamoto S.: A 94 GHz high performance quadruple subharmonic mixer MMIC. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 2, 2002, pp. 1249 – 1252. DOI 10.1109/MWSYM.2002.1011886

  63. Sungmin Ock, Kichon Han, Jong-Ryul Lee, Bumman Kim: A modified cascode type low noise amplifier using dual common source transistors. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 3, 2002, pp. 1423 – 1426. DOI 10.1109/MWSYM.2002.1012122

  64. Danneville F., Tamen B., Cappy A., Juraver J.B., Llopis O., Graffeuil J.: Low frequency noise conversion in FETs under nonlinear operation. Fluctuation and Noise Letters, Vol. 1, no 3, 2001, pp L189 – L195. DOI 10.1142/S021947750100041X

  65. Kachi T., Isobe A., Sumioka A., Asai K., Hikita M.: Spurious suppression technique for edge-trap-type SAW resonators and their application to 1-GHz wide-band SAW-VCOs for mobile communications. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 1, 2001, pp. 359 – 362. DOI 10.1109/MWSYM.2001.966906

  66. Ratna P., Kirty V.S.R.: A novel technique for accurate noise modelling. Proc. Asia-Pacific Microwave Conf. (APMC), Vol. 2, 2001, pp. 730 – 734. DOI 10.1109/APMC.2001.985475

  67. Angelov I., Kozhuharov R., Zirath H.: A simple bias dependant LF FET noise model for CAD. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 1, 2001, pp. 407 – 410. DOI 10.1109/MWSYM.2001.966917

  68. Sang-Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, Laskar J., Songcheol Hong: A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance. IEEE Gallium Arsenide Integrated Circuit Symp. Technical Digest (GaAs IC), 2001, pp. 45 – 48. DOI 10.1109/GAAS.2001.964342

  69. Ain M.F., Lancaster M.J., Gardner P.: Design of L-band microwave oscillators. IEEE High Frequency Postgraduate Student Colloquium, pp. 19-24, 2001 DOI 10.1109/HFPSC.2001.962153

  70. Peacock S.C., Stauffer M.A., Van Slyke A.M., Ferre-Pikal, E.S.: Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers. Proc. of IEEE Int. Frequency Control Symp., 2001, pp. 200 – 204. DOI 10.1109/FREQ.2001.956186

  71. Ahmed M.M., Ahmed N., Chaudhary K.S., Iqbal M.F.: Estimation of intrinsic small signal parameters of a GaAs MESFET from DC measurements. Proc. of IEEE Int. Multi Topic Conference (INMIC), 2001, pp. 97 – 103. DOI 10.1109/INMIC.2001.995322

  72. Nosal Z.M.: Simple model for dynamic range estimate of GaAs amplifiers. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 3, 2001, pp. 1963 – 1966. DOI 10.1109/MWSYM.2001.967294

  73. Pronic O.R., Markovic V.V.: Microwave transistors noise modeling by using variable noise wave temperatures. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), Vol. 1, 2001, pp. 313 – 316. DOI 10.1109/TELSKS.2001.954899

  74. Krutov A.V., Mitlin V.A., Rebrov A.S.: Some circuit aspects of low noise microwave amplifier design. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2001, pp. 123 – 125. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1173727&isnumber=20757

  75. Khosravi, R., Abdipour, A.: Green's function concept for noise model of microwave FET analysis. Int. Symp. on Electron Devices for Microwave and Optoelectronic Applications (EDMO), 2001, pp. 279 – 284. DOI 10.1109/EDMO.2001.974320

  76. Markovic V., Marinkovic Z.: Neural models of microwave transistor noise parameters based on bias conditions and S-parameters. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), Vol. 2, 2001, pp. 683 – 686. DOI 10.1109/TELSKS.2001.955864

  77. Gebara E., Nuttinck S., Murti M.R., Heo D., Harris M., Laskar J.: Temperature-dependent small-signal and power and noise characterization of GaAs power FETs. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 23rd Annual Technical Digest, 2001, pp. 233 – 236. DOI 10.1109/GAAS.2001.964385

  78. Khosravi R., Abdipour A.: Green's function concept for noise model of microwave FET analysis. 2001 Int. Symp. on Electron Devices for Microwave and Optoelectronic Applications, 2001, pp.279 – 284. DOI 10.1109/EDMO.2001.974320

  79. Dallas P.A., Everard J.K.A.: Characterization of Flicker Noise in GaAs MESFET's for Oscillator Applications. IEEE Trans. on MTT, vol. 48, no. 2, Feb. 2000, pp 245 – 257. DOI 10.1109/22.821771

  80. Pronic O., Markovic V.: Wave approach to S-parameter and noise parameter prediction of FET devices. 2nd Int. Conf. Microwave and Millimeter Wave Technology (ICMMT 2000), 2000, pp. 164 – 167. DOI 10.1109/ICMMT.2000.895647

  81. Markovic V., Marinkovic Z., Males-Ilic N.: Microwave FET transistor noise modeling using neural networks. 4th Int. Conf. on Telecommunications in Modern Satellite, Cable and Broadcasting Services, vol. 2, 1999, pp. 403 – 406. DOI 10.1109/TELSKS.1999.806240

  82. Onodera K., Nishimura K., Aoyama S., Sugitani S., Yamane Y., Hirano,M.: Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gate. IEEE Trans on ED, vol. 46, no. 2, 1999, pp. 310 – 319. DOI 10.1109/16.740895

  83. Onodera K., Sugitani S., Nishimura K., Tokumitsu M.: V-band monolithic low-noise amplifiers using ion-implanted n+ -self-aligned GaAs MESFETs. IEEE Microwave and Guided Wave Lett., vol. 9, no. 4, 1999, pp. 148 – 150. DOI 10.1109/75.763243

  84. Pascht A., Reimann M., Berroth M.: Comparison of advanced transistor technologies with regard to their noise figures. Symp. on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), 1999, pp. 125 – 130. DOI 10.1109/EDMO.1999.821472

  85. Danneville F., Dambrine G., Cappy A.: Noise Modeling in MESFET and HEMT Mixers Using a Uniforme Noisy Line Model. IEEE Trans on ED, vol. 45, no. 10, Oct. 1998, pp 2207 – 2212. DOI 10.1109/16.725255

  86. Struble W.: Noise parameter extraction of GaAs MESFETs and PHEMTs from swept noise figure measurements. 52nd ARFTG Conference Digest on Computer-Aided Design and Test for High-Speed Electronics, 1998, pp. 67 – 72.
    DOI 10.1109/ARFTG.1998.768626

  87. Young-Jin Jeon, Man-Young Jeon, Jin-Myung Kim, Yoon-Ha Jeong, Dong-Ho Jeong, Dae Mann Kim: Monolithic feedback low noise X-band amplifiers using 0.5-μm GaAs MESFETs: comparative theoretical study and experimental characterization. IEEE JSSC, vol. 33, no. 2, 1998, pp. 275 – 279. DOI 10.1109/4.658630

  88. Pantoja J.M.M., Chih-I Lin, Shaalan M., Sebastian J.L., Hartnagel H.L.: Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP. IEEE Trans on MTT, vol. 48, no. 7, 2000, pp.1275 – 1279. DOI 10.1109/22.853472

  89.  Fendrich J. A., Feng M.: Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies. Applied Physics Letters, vol. 73, no. 15, 1998, pp. 2182 – 2184. DOI 10.1063/1.122416

  90. Markovic V., Milovanovic B., Pronic O., Males-Ilic N.: MESFET noise modeling by using explicit relations for three equivalent temperatures. 9th Mediterranean Electrotechnical Conf. (MELECON 98), vol. 1, 1998, pp. 311 – 315. DOI 10.1109/MELCON.1998.692405

  91. Jae Kyoung Mun, Haecheon Kim, Chung-Hwan Kim, Min-Gun Kim, Jae Jin Lee, Kwang-Eui Pyun: Failure analysis of noise characteristics in GaAs MESFETs with parametric modeling approach. Proc of the 1997 6th Int. Symp. on Physical & Failure Analysis of Integrated Circuits, 1997, pp. 260 – 263. DOI 10.1109/IPFA.1997.638342

  92. Winson P.B., Lardizabal S.M., Dunleavy L.: A table-based bias and temperature-dependent small-signal and noise equivalent circuit model. IEEE Trans on MTT, Vol. 45, no 1, 1997, pp 46 – 51. DOI 10.1109/22.552031

  93. Chertouk M., Chovet A.: Origins and Characterization of Low-Frequency Noise in GaAs MESFET's Grown on InP Substrates. IEEE Trans on ED, vol. 43, no. 1, Jan. 1996, pp 123 – 128. DOI 10.1109/16.477602

  94. Han J.H., Lee K.: A Physically-Based High-Frequency Noise Model of MESFET's Taking Static Feedback into Account. IEEE Trans. on ED, vol. 43, no. 8, Aug. 1996, pp 1046 – 1053. DOI 10.1109/16.502413

  95. Freundorfer A.P., Nguyen T.L.: Noise in Distributed MESFET Preamplifiers. IEEE J. of Solid State Circ., vol. 31, no. 8, Aug. 1996, pp 1100 – 1111. DOI 10.1109/4.508257

  96. Greaves S.D., Unwin R.T.: The extraction of GaAs MESFET intrinsic noise parameters and their variation with bias. IEE Colloquium on RF Design Scene, 1996, pp. 10/1 – 10/4. DOI 10.1049/ic:19960178

  97. Lardizabal S.M., Fernandez A.S., Dunleavy L.P.: Temperature dependent modeling of GaAs MESFETs. IEEE Trans on MTT, Vol. 44, no 3, 1996, pp 357 – 363. DOI 10.1109/22.486144

  98. González T., Pardo D., Varani L., Reggiani L.: Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET’s. IEEE Trans. Electron Devices, vol. 42, May, 1995, pp. 991–998. DOI 10.1109/16.381998

  99. Nosal Z.: Temperature dependent functional small-signal and noise model of GaAs FET. IEEE MTT-S International Microwave Symposium Digest, vol. 3, 1995, pp. 1339 – 1342. DOI 10.1109/MWSYM.1995.406218

  100. Abdipour A., Pacaud A.: A new semidistributed model for the noise and scattering parameters of the M(H)MIC FETs. Proc of Microwave and Optoelectronics Int. Conf., vol. 2, 1995, pp. 755 – 760. DOI 10.1109/SBMOMO.1995.511021

  101. Prichett S., Fernandez A., Bridges D., Whelan K.: Improved FET noise model extraction method for statistical model development. IEEE MTT Symp. Dig., 16-20 May 1995, Vol. 2, 1995, pp 943 – 946. DOI 10.1109/MWSYM.1995.405893

  102. Apostolakis P.J., Middleton J.R., Scherrer D., Feng M., Lepore A.N.: Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications. IEEE Electron Device Letters, vol. 15, no. 7, 1994, pp. 239 – 241. DOI 10.1109/55.294082

  103. Onodera K., Nishimura K., Asai K., Sugitani S.: High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFETs with Au/WSiN T-shaped gate. IEEE Trans on ED, vol. 40, no. 1, 1993, pp. 18 – 24. DOI 10.1109/16.249418

  104. Feng M., Laskar J.: On the speed and noise performance of direct ion-implanted GaAs MESFETs. IEEE Trans on ED, vol. 40, no. 1, 1993, pp. 9 – 17. DOI 10.1109/16.249417

  105. Laskar J., Feng M., Kruse J.: Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation. IEEE Electron Device Letters, vol. 14, no. 2, 1993, pp. 57 – 59. DOI 10.1109/55.215107

  106. Feng M., Laskar J., Kruse J., Neidhard R.: Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications. IEEE Microwave and Guided Wave Letters, vol. 2, no. 5, 1992, pp. 194 – 195. DOI 10.1109/75.134352

  107. Shiga N., Nakajima S., Otobe K., Sekiguchi T., Kuwata N., Matsuzaki K., Hayashi H.: Modeling on statistical distribution of noise parameters in pulse-doped GaAs MESFETs. IEEE MTT-S Int. Microwave Symp. Digest, 1992, vol. 2, pp. 655 – 658. DOI 10.1109/MWSYM.1992.188068

  108. Lee S.B., Tchah K.H.: Design centring for yield and noise figure improvement of GaAs MESFETs. IEE Proc. G - Circuits, Devices and Systems, vol. 138, no. 4, 1991, pp. 467 – 473.

  109. Onodera K., Nishimura K., Sugitani S., Asai K.: Ultra-low-noise fully ion-implanted GaAs-MESFET with Au/WSiN refractory metal gate. Technical Digest of 1991 Int. Electron Devices Meeting (IEDM '91), 1991, pp. 251 – 254. DOI 10.1109/IEDM.1991.235455

  110. Raggio Jeff: Results of an On-Wafer Noise-Parameter Measurement Comparison. 36th ARFTG Conference Digest-Fall, vol. 18, 1990, pp. 26 – 35. DOI 10.1109/ARFTG.1990.323993

  111. Shiga N., Nakajima S., Otobe K., Sekiguchi T., Kuwata N., Matsuzaki K.-I., Hayashi H.: X-band monolithic four-stage LNA with pulse-doped GaAs MESFETs. Technical Digest of 12th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symp., 1990, pp. 237 – 240. DOI 10.1109/GAAS.1990.175496

  112. Rizzoli V., Mastri F., Cecchetti C.: Computer-Aided Noise Analysis of MESFET and HEMT Mixers. IEEE Trans. on MTT, vol. 37, no. 9, Sept. 1989, pp 1601 – 1610. DOI 10.1109/22.32224

  113. Heinrich W.: High-Frequency MESFET Noise Modeling Including Distributed Effects. IEEE Trans. on MTT, vol. 37, no. 5, May 1989, pp 836 – 842. DOI 10.1109/22.17449

  114. Pospieszalski M.: Modelling of Noise Parameters of MESFET's and MODFET's and Their Frequency and Temperature Dependence. IEEE Trans on MTT, vol. 37, no. 9, Sept. 1989, pp 1340 – 1350. DOI 10.1109/22.32217

  115. Park M.-S., Shim C.-S., Kang M.-H.: Analysis of sensitivity degradation caused by the flicker noise of GaAs-MESFETs in fiber-optic receivers. J. of Lightwave Technology, Vol. 6, no. 5, 1988, pp 660 – 667. DOI 10.1109/50.4051

  116. Banerjee I., Chye P.W., Gregory P.E.: Unusual C-V profiles of Si-implanted (211) GaAs substrates and unusually low-noise MESFETs fabricated on them. IEEE Electron Device Letters, vol. 9, no. 1, 1988, pp. 10 – 12. DOI 10.1109/55.20397

  117. Tehrani S., Nair V., Weitzel C.E., Tam G.: The effects of parasitic capacitance on the noise figure of MESFETs. IEEE Trans on ED, vol. 35, no. 5, 1988, pp. 703 – 706. DOI 10.1109/16.2517

  118. Gupta M.S.Jr., Pitzalis O., Rosenbaum S.E., GreiIing P.T.: Microwave Noise Characterization of GaAs MESFETs by On-Wafer Measurement of the Output Noise Current. IEEE MTT-S Int. Microwave Symp. Digest, vol. 1, 1987, pp. 513 – 516. DOI 10.1109/MWSYM.1987.1132447

  119. Liu S.-M.J., Das M.B., Chin-Kun Peng, Klem J., Henderson T.S., Kopp W.F., Morkoc H.: Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2 to 108 Hz. IEEE Trans on ED, vol. 33, no. 5, 1986, pp. 576 – 582. DOI 10.1109/T-ED.1986.22535

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  124. Brewitt-Taylor C., Robson P. N., Sitch J. E.: Noise Figure of MESFETs. IEE Proceedings I: Solid State & Electron Devices, vol. 127, no. 1, Febr. 1980, pp 1 – 8. DOI 10.1049/ip-i-1:19800001

  125. Golio J.M., Trew R.J.: Compound semiconductors for low-noise microwave MESFET applications. IEEE Trans on ED, vol. 27, no. 7, 1980, pp. 1256 – 1262. DOI 10.1109/T-ED.1980.20017

  126. Fukui H.: Optimal Noise Figure of Microwave GaAs MESFET's. IEEE Trans on ED, vol. ED-36, no. 7, July 1979, pp 1032 – 1037. DOI 10.1109/T-ED.1979.19541

  127. Fukui H.: Design of Microwave GaAs MESFET's for Broad-Band Low-Noise Amplifiers. IEEE Trans. on MTT, vol. MTT-27, no. 7, July 1979, pp 643 – 650. DOI 10.1109/TMTT.1979.1129694

  128. Tsironis Chr., Beneking H.: Dependence of the Noise Parameters of the GaAs MESFET on Technology, Parasitic Components and Bias Conditions in the Frequency Range Up to 12 GHz. 7th European Microwave Conf., 1977, pp. 85 – 89. DOI 10.1109/EUMA.1977.332407

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