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NOISE in MESFET

A reasonable probability is the only certainty”

 (E.W. Howe)

  1. Anvarifard M.K.: Symmetrical SOI MESFET with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances. Superlattices and Microstructures, Vol. 98, 2016, pp. 492 – 503. DOI 10.1016/j.spmi.2016.09.003

  2. Dordevic Vladica, Marinkovic Zlatica, Markovic Vera, et al.: Extraction of microwave FET noise wave temperatures by using a novel neural approach. COMPEL - The Int. J. for Computation and Mathematics in Electrical and Electronic Eng., Vol. 35, no. 1, 2016, pp. 339 – 349. DOI 10.1108/COMPEL-07-2015-0254

  3. Orouji A.A., Khayatian A., Keshavarzi P.: A novel high-performance high-frequency SOI MESFET by the damped electric field. Physica E - Low-Dimensional Systems & Nanostructures, Vol. 80, 2016, pp. 8 – 13. https://doi.org/10.1016/j.physe.2016.01.006

  4. Guerrieri S.D., Bonani F., Bertazzi F., et al.: NA Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions-Part I: Large-Signal Sensitivity. IEEE Trans in ED, Vol. 63, no. 3, 2016, pp. 1195 – 1201. DOI 10.1109/TED.2016.2517447

  5. Byravarapu Rishitej: Physics Based Analytical Model of Silicon Carbide MESFET with Effective Drift Velocity and Mobility. California State University Northridge, Academic Dissertation, 2016, 66 pages. http://hdl.handle.net/10211.3/162105

  6. Veesam Srikanth: Analytical model of SiC based MESFET for determination of device frequency and noise. California State University Northridge, Academic Dissertation, 2016, 69 pages. http://hdl.handle.net/10211.3/172008

  7. Fares Z., Saidi Y., Aliouat W.: Effect of temperature on (IV) statics characteristics of GaAs Mesfet. Journal of Physics: Conference Series, Vol. 758, 2016, Article # 012011. DOI 10.1088/1742-6596/758/1/012011

  8. Arvydas Matulionis, et al.: Window for optimal frequency operation and reliability of 3DEG and 2DEG channels for oxide microwave MESFETs and HFETs. Final Report, Center for Physical Sciences and Technology State Scientific Research Institute, Award No. FA8655-12-1-2109, European Office of Aerospace Research & Development, 2016, 42 pages. http://www.dtic.mil/dtic/tr/fulltext/u2/1007707.pdf

  9. Thornton T.J., Lepkowski W., Wilk S.J.: Impact Ionization in SOI MESFETs at the 32-nm Node. IEEE Trans on ED, Vol. 10, no. 63, 2016, pp. 4143 – 4146. DOI 10.1109/TED.2016.2601241

  10. Ramezani Z., Orouji A.A., Rahimian M.: High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications. Materials Science in Semiconductor Processing, Vol. 30, 2015, pp. 75 – 84. DOI 10.1016/j.mssp.2014.09.023

  11. Marinkovic Z., Pronic-Rancic O., Markovic V.: New neural method for bias dependent noise modelling of microwave transistors. Journal of Communications Technology and Electronics, Vol. 59, no. 11, 2014, pp. 1303 – 1309. DOI 10.1134/S1064226914110114

  12. Yoon Ki-Cheol, Lee Jong-Chul: A stable low noise and high gain dual-band active band-pass filter with GaAs-MESFET using CRLH metamaterial. Microwave & Optical Techn. Lett., Vol. 56, no. 9, 2014, pp. 1985 – 1988. DOI 10.1002/mop.28509

  13. Ramezani Z., Orouji Ali A., Keshavarzi P.: A novel double-recessed 4H-SiC MESFET using scattering the electric field for high power and RF applications. Physica E-Low-Dimensional Systems & Nanostructures, Vol. 59, 2014, pp. 202 – 209. DOI 10.1016/j.physe.2014.01.002

  14. Orouji Ali A., Ramezani Z., Keshavarzi P., Aminbeidokhti A: A novel high frequency SOI MESFET by modified gate capacitances. Superlattices and Microstructures, Vol. 61, 2013, pp. 69 – 80. DOI 10.1016/j.spmi.2013.06.001

  15. Prameela B., Jagadeesh K.P.: Design of a Mesfet based Low Noise Amplifier with Improved Noise Figure for Low Power Wireless Applications in 2-3 GHz. 3rd Int. Conf on Advances in Computing & Communications (ICACC), 2013, pp. 257 – 260. DOI 10.1109/ICACC.2013.112

  16. Ki-Cheol Yoon, Jaegook Lee, Hyunwook Lee, Jong-Chul Lee: Low noise and high gain dual-band active band-pass filter with GaAs MESFET using CRLH metamaterial. 3rd Asia Pacific Microwave Conference (APMC)-Proceedings, 2013, pp. 697 – 699. DOI 10.1109/APMC.2013.6694959

  17. Ulansky V., Ben Suleiman S.F.: A low phase-noise GaAs FET/BJT voltage-controlled oscillator for microwave applications. Int. Symp. on Physics & Eng. of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013, pp. 407 – 414. DOI 10.1109/MSMW.2013.6622100

  18. Liang Lin, Liang Zhou, Wen-Yan Yin, Lin-Juan Huang: Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band GaAs MESFET-based low noise amplifier(LNA). IEEE Int. Symp. on Electromagnetic Compatibility (EMC), 2012, pp. 329 – 333 DOI 10.1109/ISEMC.2012.6351827

  19. Shanta A. S., Hossain D. B., Huq T. R., Mahmood R., Islam M. S.: Analytical model of GaN MESFETs for high power and microwave frequency applications. Int. Symp. on Instrum. & Measurement, Sensor Network and Automation (IMSNA), Vol. 1, 2012, pp. 28 – 31. DOI 10.1109/MSNA.2012.6324509

  20. Chao Zhang, Guicui Fu, Hantian Gu, Dong Zhang: Simulation of temperature effects on GaAs MESFET based on physical model. IEEE Conf. on Prognostics and System Health Management (PHM), 2012, pp. 1 – 6. DOI 10.1109/PHM.2012.6228796

  21. Jing Jin, Meng-Lin Zhai, Wen-Yan Yin: Susceptibility analysis of wideband RF receiving channel in the presence of an electromagnetic pulse (EMP). Asia-Pacific Symp. on Electromagnetic Compatibility (APEMC), 2012, pp. 433 – 436. DOI 10.1109/APEMC.2012.6237976

  22. Torkhov N.A., Bozhkov V.G., Genneberg V.A., Petrov I.V.: Engineering of low-frequency and low-noise MEFSET average-capacity with regard for fractal properties of gallium arsenide epitaxial layers. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2011, pp. 697 – 698. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6069113&isnumber=6068772

  23. Konczakowska A., Cichosz J., Dokupil D., Flisikowski P., Szewczyk A., Stawarz-Graczyk B.: The low frequency noise behaviour of SiC MESFETs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 12-16 June 2011, pp 444 – 447. DOI 10.1109/ICNF.2011.5994427

  24. Danneville F.: Microwave Noise and FET Devices. IEEE Microwave Magazine, Vol. 11, no. 6, 2010, pp. 53 – 60. DOI 10.1109/MMM.2010.937731

  25. Islam M.R., Zahirul Alam A.H.M., Khan S., Shabana A.A.A.: Design of a low noise amplifier with GaAs MESFET at ku_Band. Int. Conf. on Computer and Communication Engineering (ICCCE), 2010, pp. 1 – 5. DOI 10.1109/ICCCE.2010.5556786

  26. Shestakov A.K., Zhuravlev K.S., Arykov V.S., Kagadei V.A.: Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET). IEEE Russia School and Seminar on Fund. Problems of Micro/Nanosystems Technologies (MNST), 2010, pp. 33 – 36. DOI 10.1109/MNST.2010.5687132

  27. Marinkovic Z., Rancic O.P., Markovic V.: Hybrid PKI empirical-neural bias dependent noise model of microwave transistors. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), 2009, pp. 44 – 47. DOI 10.1109/TELSKS.2009.5339493

  28. Freundorfer A.P., Bijumon P.V., Sayer M.: Integrated on-chip Ba2Ti9O20 dielectric resonator oscillator in GaAs technology. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2009, pp. 1105 – 1108. DOI 10.1109/MWSYM.2009.5165894

  29. Hamidi E., Mohammad-Taheri M., Moradi G.: Improvements in the Noise Theory of the MMIC Distributed Amplifiers. IEEE Trans on MTT, Vol. 56, no. 8, 2008, pp. 1797 – 1806. DOI 10.1109/TMTT.2008.927310

  30. Weatherspoon M.H., Langoni D.: Accurate and Efficient Modeling of FET Cold Noise Sources Using ANNs. IEEE Trans on Instr. & Meas., Vol. 57, no. 2, 2008, pp. 432 – 437. DOI 10.1109/TIM.2007.909958

  31. Sancho S., Ramirez F., Suarez A.: Analysis and reduction of the oscillator phase noise from the variance of the phase deviations, determined with harmonic balance. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2008, pp. 1449 – 1452. DOI 10.1109/MWSYM.2008.4633052

  32. Brehm G.E.: Early MMIC developments at Texas Instruments. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2008, pp. 823 – 826. DOI 10.1109/MWSYM.2008.4632959

  33. Resca D., Santarelli A., Raffo A., Cignani R., Vannini G., Filicori F., Schreurs D.M.M.-R.: Scalable Nonlinear FET Model Based on a Distributed Parasitic Network Description. IEEE Trans on MTT, Vol. 56, no 4, 2008, pp 755 – 766. DOI 10.1109/TMTT.2008.918153

  34. Weatherspoon M.H., Langoni D.: Accurate and Efficient Modeling of FET Cold Noise Sources Using ANNs. IEEE Trans on Instr. & Meas., Vol. 57, no. 2, 2008, pp. 432 – 437. DOI 10.1109/TIM.2007.909958

  35. Marinkovic Z., Pronic Rancic O., Markovic V.: Application of Artificial Neural Networks in Noise Wave Modeling of DG MESFETs. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), 2007, pp. 283 – 286. DOI 10.1109/TELSKS.2007.4375992

  36. Gromov D.V., Polevich S.A.: Effects of Powerful Pulsed Microwave Electromagnetic Influence in Low Noise Amplifiers. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2007, pp. 659 – 660. DOI 10.1109/CRMICO.2007.4368891

  37. Hilborn I., Freundorfer A.P., Show J., Keller M.G.: Design of a Single Chip GaAs MESFET Dielectric Resonator Oscillator at 26 GHz. Canadian Conf. on Electrical and Computer Eng. (CCECE), 2007, pp. 671 – 674. DOI 10.1109/CCECE.2007.172

  38. Breitbarth J., Pajic S., Wang N., Popovic Z.: Additive Phase Noise in Linear and High-Efficiency X-Band Power Amplifiers. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2006, pp. 1871 – 1874. DOI 10.1109/MWSYM.2006.249779

  39. Zuo-Min Tsai, Kuo-Jung Sun, Vendelin G.D., Huei Wang: A new feedback method for power amplifier with unilateralization and improved output return loss. IEEE Trans on MTT, Vol. 54, no. 4, 2006, pp. 1590 – 1597. DOI 10.1109/TMTT.2006.871347

  40. Sanabria C., Chakraborty A., Hongtao Xu, Rodwell M.J., Mishra U.K., York R.A.: The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs. IEEE ED Lett., Vol. 27, no. 1, 2006, pp. 19 – 21. DOI 10.1109/LED.2005.860889

  41. Zadeh A.R., Nikmehr S.: Noise Considerations in Cascaded Single-Stage Distributed Amplifiers. Int. Conf. on Electrical and Computer Engineering (ICECE), 2006, pp. 92 – 95. DOI 10.1109/ICECE.2006.355298

  42. Jindal R.P.: Compact Noise Models for MOSFETs. IEEE Trans on ED, Vol. 53, no. 9, 2006, pp. 2051 – 2061. DOI 10.1109/TED.2006.880368

  43. Marinkovic Z., Pronic-Rancic O., Markovic V.: Efficient ANN based noise modeling of microwave FETs against temperature. IEEE Mediterranean Electrotechnical Conf (MELECON), 2006, pp. 153 – 156. DOI 10.1109/MELCON.2006.1653059

  44. Bertazzi F., Bonani F., Conte G., Guerrieri S.D., Ghione G.: Physics-based Mixer Noise Simulation. Int. Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2006, pp. 102 – 105. DOI 10.1109/INMMIC.2006.283520

  45. Jevtic M.M., Hadzi-Vukovic J.: Low Frequency Noise of GaAs MESFET Degraded in ESD Test. Int. Conf on Microelectronics (ICM), 2006, pp. 532 – 535. DOI 10.1109/ICMEL.2006.1651020

  46. Jianjun Gao, Boeck G.: Relationships between common source, common gate, and common drain FETs. IEEE Trans on MTT, Vol. 53, no. 12, 2005, pp. 3825 – 3831. DOI 10.1109/TMTT.2005.859863

  47. Hashemi A., Abdipour A., Fassihi A.: A new approach to distributed modeling of MESFETs. Proc. Asia-Pacific Microwave Conf. (APMC), Vol. 2, 2005, pp. 4 DOI 10.1109/APMC.2005.1606399

  48. Marinkovic Z., Pronic O., Markovic V., Randelovic J.: Bias dependent scalable noise models of MESFETs/HEMTs based on neural networks. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), Vol. 2, 2005, pp. 377 – 380. DOI 10.1109/TELSKS.2005.1572131

  49. Moreira C.P., Kerherve E., Jarry P., Belot D., Filho H.T.: Fully-integrated dual-standard BiFET low-noise amplifier for DCS1800/WCDMA applications. SBMO/IEEE MTT-S Int.Microwave & Optoelectronics Conference (IMOC), 2005, pp. 32 – 37. DOI 10.1109/IMOC.2005.1580057

  50. Chien-Chang Huang, Han-Ting Pai, Kuan-Yu Chen: Analysis of microwave MESFET power amplifiers for digital wireless communications systems. IEEE Trans on MTT, Vol. 52, no. 4, 2004, pp. 1284 – 1291. DOI 10.1109/TMTT.2004.825646

  51. Anderson R.J., Spann J., Yang J., Thornton T.J.: The 1/f noise characteristics of a Schottky Junction Transistor: an ultra-low power, radiation hardened sub-threshold MESFET. Proc. IEEE Aerospace Conf., Vol. 4, 2004, pp. 2431 – 2436. DOI 10.1109/AERO.2004.4620172

  52. Romisch S., Weiss M.D.: Experimental investigation of phase noise in high-efficiency class-E amplifiers. Proc. of IEEE Int. Frequency Control Symp., 2004, no., pp. 718 – 724. DOI 10.1109/FREQ.2004.1418553

  53. Heng-Chia Chang: Analysis of coupled phase-locked loops with independent oscillators for beam control active phased arrays. IEEE Trans on MTT, Vol. 52, no. 3, 2004, pp. 1059 – 1066. DOI 10.1109/TMTT.2004.823590

  54. Chakrabarti P., Tiwari B.N., Kumar S.: Noise behavior of an optically controlled GaAs MESFET. Journal of Lightwave Technology, Vol. 22, no. 2, 2004, pp. 534 – 542. DOI 10.1109/JLT.2003.822674

  55. Pronic O., Mitic G., Randelovic J., Markovic V.: Procedure for accurate noise modelling of microwave FETs against temperature. Electronics Lett., Vol. 40, no 24, 2004, pp 1551 – 1553. DOI 10.1049/el:20046718

  56. Wu Lu, Kumar V., Piner E.L., Adesida I.: DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration. IEEE Transactions on ED, vol. 50, no. 4, 2003, pp. 1069 – 1074. DOI 10.1109/TED.2003.812083

  57. Tzeng S. Y., Cich M. J., Zhao R., Feick H., Weber E. R.: Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs. Applied Physics Letters, vol. 82, no. 7, 2003, pp.1063 – 1065. DOI 10.1063/1.1555710

  58. P. Chakrabarti, Badri Nath Tiwari, Suman Kumar: Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies. SPIE Digital Library, Optical Engineering, Vol 42, no 2, 2003, pp. 447. DOI 10.1117/1.1532332

  59. Ramirez F., de Cos M.E., Suarez A.: Nonlinear analysis tools for the optimized design of harmonic-injection dividers. IEEE Trans on MTT, Vol. 51, no. 6, 2003, pp. 1752 – 1762. DOI 10.1109/TMTT.2003.812579

  60. Heng-Chia Chang: Phase noise in self-injection-locked oscillators - theory and experiment. IEEE Trans on MTT, Vol. 51, no. 9, 2003, pp. 1994 – 1999. DOI 10.1109/TMTT.2003.815872

  61. Ahmed M.M.: An improved method to estimate intrinsic small signal parameters of a GaAs MESFET from measured dc characteristics. IEEE Trans on ED, Vol. 50, no.11, 2003, pp. 2196 – 2201. DOI 10.1109/TED.2003.818391

  62. Yan Chen, Zhizhang Chen: A dual-gate FET subharmonic injection-locked self-oscillating active integrated antenna for RF transmission. IEEE Microwave & Wireless Comp. Lett., Vol. 13, no. 6, 2003, pp. 199 – 201. DOI 10.1109/LMWC.2003.814093

  63. Iqbal M.A., Khan S.H.: Generation-recombination noise characteristics of GaAs MESFETs. Proc. of IEEE Int. Multi Topic Conference (INMIC), 2003, pp. 192 – 196. DOI 10.1109/INMIC.2003.1416694

  64. Zolper J.C.: Status, challenges, and future opportunities for compound semiconductor electronics. IEEE Gallium Arsenide Integrated Circuit Symp. Technical Digest (GaAs IC), 2003, pp. 3 – 6. DOI 10.1109/GAAS.2003.1252350

  65. Brauner T., Kung R., Vogt R., Bachtold W.: 5-6 GHz low-noise active antenna array for multi-dimensional channel-sounding. SBMO/IEEE MTT-S Int.Microwave & Optoelectronics Conference (IMOC), Vol. 1, 2003, pp. 297 – 301. DOI 10.1109/IMOC.2003.1244874

  66. Madureira M.A.M., Monteiro P.M.P., Aguiar R.L., Violas M., Gloanec M., Leclerc E., Lefebvre B.: High gain GaAs 10 Gbps transimpedance amplifier with integrated bondwire effects. IEEE Int. Symp on Circuits and Systems (ISCAS), Vol. 2, 2003, pp. II-173 – II-176. DOI 10.1109/ISCAS.2003.1205924

  67. Byunghoo Jung, Gopinath A., Harjani R.: A novel noise optimization design technique for radio frequency low noise amplifiers. IEEE Int. Symp on Circuits and Systems (ISCAS), Vol. 1, 2003, pp. I-209 – I-212. DOI 10.1109/ISCAS.2003.1205537

  68. Ahmed M.M.: Simulated I-V characteristics of non-uniformly doped microwave GaAs MESFET's. IEEE Int. Conf. on Vacuum Electronics (IVEC), 2003, pp. 239. DOI 10.1109/IVEC.2003.1286274

  69. Pantisano L., Cheung K. P.: Origin of microwave noise from an n-channel metal–oxide–semiconductor field effect transistor. Journal of Applied Physics, vol. 92, no. 11, 2002, pp. 6679 – 6683. DOI 10.1063/1.1518763

  70. Moradi G., Abdipour A.: A simplified noise modeling of mm-wave FETs. Int. Conf on Microwave and Millimeter Wave Technology (ICMMT), 2002, pp. 312 – 314. DOI 10.1109/ICMMT.2002.1187699

  71. Krasilnikov S.V.: High-stable low-noise microwave oscillator. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2002, pp. 123- 124 DOI 10.1109/CRMICO.2002.1137171

  72. Kanaya K., Kawakami K., Hisaka T., Ishikawa T., Sakamoto S.: A 94 GHz high performance quadruple subharmonic mixer MMIC. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 2, 2002, pp. 1249 – 1252. DOI 10.1109/MWSYM.2002.1011886

  73. Sungmin Ock, Kichon Han, Jong-Ryul Lee, Bumman Kim: A modified cascode type low noise amplifier using dual common source transistors. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 3, 2002, pp. 1423 – 1426. DOI 10.1109/MWSYM.2002.1012122

  74. Danneville F., Tamen B., Cappy A., Juraver J.B., Llopis O., Graffeuil J.: Low frequency noise conversion in FETs under nonlinear operation. Fluctuation and Noise Letters, Vol. 1, no 3, 2001, pp L189 – L195. DOI 10.1142/S021947750100041X

  75. Kachi T., Isobe A., Sumioka A., Asai K., Hikita M.: Spurious suppression technique for edge-trap-type SAW resonators and their application to 1-GHz wide-band SAW-VCOs for mobile communications. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 1, 2001, pp. 359 – 362. DOI 10.1109/MWSYM.2001.966906

  76. Ratna P., Kirty V.S.R.: A novel technique for accurate noise modelling. Proc. Asia-Pacific Microwave Conf. (APMC), Vol. 2, 2001, pp. 730 – 734. DOI 10.1109/APMC.2001.985475

  77. Angelov I., Kozhuharov R., Zirath H.: A simple bias dependant LF FET noise model for CAD. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 1, 2001, pp. 407 – 410. DOI 10.1109/MWSYM.2001.966917

  78. Sang-Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, Laskar J., Songcheol Hong: A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance. IEEE Gallium Arsenide Integrated Circuit Symp. Technical Digest (GaAs IC), 2001, pp. 45 – 48. DOI 10.1109/GAAS.2001.964342

  79. Ain M.F., Lancaster M.J., Gardner P.: Design of L-band microwave oscillators. IEEE High Frequency Postgraduate Student Colloquium, pp. 19-24, 2001 DOI 10.1109/HFPSC.2001.962153

  80. Peacock S.C., Stauffer M.A., Van Slyke A.M., Ferre-Pikal, E.S.: Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers. Proc. of IEEE Int. Frequency Control Symp., 2001, pp. 200 – 204. DOI 10.1109/FREQ.2001.956186

  81. Ahmed M.M., Ahmed N., Chaudhary K.S., Iqbal M.F.: Estimation of intrinsic small signal parameters of a GaAs MESFET from DC measurements. Proc. of IEEE Int. Multi Topic Conference (INMIC), 2001, pp. 97 – 103. DOI 10.1109/INMIC.2001.995322

  82. Nosal Z.M.: Simple model for dynamic range estimate of GaAs amplifiers. IEEE MTT-S Int. Microwave Symp. Digest (MTT), Vol. 3, 2001, pp. 1963 – 1966. DOI 10.1109/MWSYM.2001.967294

  83. Pronic O.R., Markovic V.V.: Microwave transistors noise modeling by using variable noise wave temperatures. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), Vol. 1, 2001, pp. 313 – 316. DOI 10.1109/TELSKS.2001.954899

  84. Krutov A.V., Mitlin V.A., Rebrov A.S.: Some circuit aspects of low noise microwave amplifier design. Int.Crimean Conf. Microwave and Telecomm. Technology (CriMiCo), 2001, pp. 123 – 125. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1173727&isnumber=20757

  85. Khosravi, R., Abdipour, A.: Green's function concept for noise model of microwave FET analysis. Int. Symp. on Electron Devices for Microwave and Optoelectronic Applications (EDMO), 2001, pp. 279 – 284. DOI 10.1109/EDMO.2001.974320

  86. Markovic V., Marinkovic Z.: Neural models of microwave transistor noise parameters based on bias conditions and S-parameters. Int.Conf on Telecom. in Modern Satellite, Cable, and Broadcasting Services (TELSIKS), Vol. 2, 2001, pp. 683 – 686. DOI 10.1109/TELSKS.2001.955864

  87. Gebara E., Nuttinck S., Murti M.R., Heo D., Harris M., Laskar J.: Temperature-dependent small-signal and power and noise characterization of GaAs power FETs. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 23rd Annual Technical Digest, 2001, pp. 233 – 236. DOI 10.1109/GAAS.2001.964385

  88. Khosravi R., Abdipour A.: Green's function concept for noise model of microwave FET analysis. 2001 Int. Symp. on Electron Devices for Microwave and Optoelectronic Applications, 2001, pp.279 – 284. DOI 10.1109/EDMO.2001.974320

  89. Dallas P.A., Everard J.K.A.: Characterization of Flicker Noise in GaAs MESFET's for Oscillator Applications. IEEE Trans. on MTT, vol. 48, no. 2, Feb. 2000, pp 245 – 257. DOI 10.1109/22.821771

  90. Pronic O., Markovic V.: Wave approach to S-parameter and noise parameter prediction of FET devices. 2nd Int. Conf. Microwave and Millimeter Wave Technology (ICMMT 2000), 2000, pp. 164 – 167. DOI 10.1109/ICMMT.2000.895647

  91. Markovic V., Marinkovic Z., Males-Ilic N.: Microwave FET transistor noise modeling using neural networks. 4th Int. Conf. on Telecommunications in Modern Satellite, Cable and Broadcasting Services, vol. 2, 1999, pp. 403 – 406. DOI 10.1109/TELSKS.1999.806240

  92. Onodera K., Nishimura K., Aoyama S., Sugitani S., Yamane Y., Hirano,M.: Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gate. IEEE Trans on ED, vol. 46, no. 2, 1999, pp. 310 – 319. DOI 10.1109/16.740895

  93. Onodera K., Sugitani S., Nishimura K., Tokumitsu M.: V-band monolithic low-noise amplifiers using ion-implanted n+ -self-aligned GaAs MESFETs. IEEE Microwave and Guided Wave Lett., vol. 9, no. 4, 1999, pp. 148 – 150. DOI 10.1109/75.763243

  94. Pascht A., Reimann M., Berroth M.: Comparison of advanced transistor technologies with regard to their noise figures. Symp. on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), 1999, pp. 125 – 130. DOI 10.1109/EDMO.1999.821472

  95. Danneville F., Dambrine G., Cappy A.: Noise Modeling in MESFET and HEMT Mixers Using a Uniforme Noisy Line Model. IEEE Trans on ED, vol. 45, no. 10, Oct. 1998, pp 2207 – 2212. DOI 10.1109/16.725255

  96. Struble W.: Noise parameter extraction of GaAs MESFETs and PHEMTs from swept noise figure measurements. 52nd ARFTG Conference Digest on Computer-Aided Design and Test for High-Speed Electronics, 1998, pp. 67 – 72.
    DOI 10.1109/ARFTG.1998.768626

  97. Young-Jin Jeon, Man-Young Jeon, Jin-Myung Kim, Yoon-Ha Jeong, Dong-Ho Jeong, Dae Mann Kim: Monolithic feedback low noise X-band amplifiers using 0.5-μm GaAs MESFETs: comparative theoretical study and experimental characterization. IEEE JSSC, vol. 33, no. 2, 1998, pp. 275 – 279. DOI 10.1109/4.658630

  98. Pantoja J.M.M., Chih-I Lin, Shaalan M., Sebastian J.L., Hartnagel H.L.: Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP. IEEE Trans on MTT, vol. 48, no. 7, 2000, pp.1275 – 1279. DOI 10.1109/22.853472

  99.  Fendrich J. A., Feng M.: Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies. Applied Physics Letters, vol. 73, no. 15, 1998, pp. 2182 – 2184. DOI 10.1063/1.122416

  100. Markovic V., Milovanovic B., Pronic O., Males-Ilic N.: MESFET noise modeling by using explicit relations for three equivalent temperatures. 9th Mediterranean Electrotechnical Conf. (MELECON 98), vol. 1, 1998, pp. 311 – 315. DOI 10.1109/MELCON.1998.692405

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