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NOISE in JFET

Noise is the most impertinent of all forms of interruption.

It is not only an interruption, but is also a disruption of thought”

 Arthur Schopenhauer (1788 – 1860)

  1. Gong Xun, Ferreira J.A.: Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives. IEEE Trans on Power Electronics, Vol. 29, no. 4, 2014, pp. 1757 – 1767. DOI 10.1109/TPEL.2013.2271301

  2. Gong Xun, Josifovic I., Ferreira J.A.: Modeling and Reduction of Conducted EMI of Inverters With SiC JFETs on Insulated Metal Substrate. IEEE Trans on Power Electronics, Vol. 28, no. 7, 2013, pp. 3138 – 3146. DOI 10.1109/TPEL.2012.2221747

  3. Hibi Y., Matsuo H., Sekiguchi S., Ikeda H., Fujiwara M.: Evaluation of Submillimeter/Terahertz Camera Performance With the Cryogenic Multi-Channel Read Out System. IEEE Trans on Terahertz Science and Technology, Vol. 3, no. 4, 2013, pp. 422 – 427. DOI 10.1109/TTHZ.2013.2258714

  4. Moh T.S.Y., Nie M., Pandraud G., de Smet L.C.P.M., Sudholter E.J.R., Huang Q-A., Sarro P.M.: Effect of silicon nanowire etching on signal-to-noise ratio of SiNW FETs for (bio)sensor applications. Electronics Lett., Vol. 49, no. 13, 2013, pp. 782 – 784. DOI 10.1049/el.2013.1397

  5. Han C.Y., Qian L.X., Leung C.H., Che C.M., Lai P.T.: A Low-frequency Noise Model with Carrier Generation-Recombination Process for Pentacene Organic Thin-film Transistor. Journal of Applied Physics, Vol. 114, no. 4, 2013, pp. 044503.1 – 044503.6. DOI 10.1063/1.4816103

  6. Holloway G.W., Song Yipu, Haapamaki C.M., LaPierre R.R., Baugh J.: Trapped Charge Dynamics in InAs Nanowires. Journal of Applied Physics, Vol. 113, no. 2, 2013, pp. 024511-1 – 024511-5. DOI 10.1063/1.4773820

  7. Wrzecionko B., Bortis D., Biela J., Kolar J.W.: Novel AC-Coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETs. IEEE Trans on Power Electronics, Vol. 27, no. 7, 2012, pp. 3452 – 3463. DOI 10.1109/TPEL.2011.2182209

  8. Ruxi Wang, Blanchette H.F., Boroyevich D., Mattavelli P.: EMI noise attenuation prediction with mask impedance in motor drive system. Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), 2012, pp. 2279 – 2284. DOI 10.1109/APEC.2012.6166140

  9. Giannoutsos S. V., Pachos P., Manias, Stefanos N.: Performance evaluation of a proposed gate drive circuit for normally-ON SiC JFETs used in PV inverter applications. IEEE Int. Energy Conf. and Exhibition (ENERGYCON), 2012, pp. 26 – 31. DOI 10.1109/EnergyCon.2012.6347765

  10. Amponsah K., Lal A.: Multiple tip nano probe actuators with integrated JFETs. IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS), 2012, pp. 1356 – 1359. DOI 10.1109/MEMSYS.2012.6170418

  11. Gong Xun, Ferreira J.A.: Modeling and reduction of conducted EMI in SiC JFET motor drives with insulated metal substrate. IEEE Energy Conversion Congress and Exposition (ECCE), 2012, pp. 629 – 636. DOI 10.1109/ECCE.2012.6342762

  12. Arnaboldi C., Giachero A., Gotti C., Maino M., Pessina G.: An Amplifier for Bolometric Detectors. IEEE Trans on Nuclear Science, Vol. 58, no. 6, 2011, pp. 3204 – 3211. DOI 10.1109/TNS.2011.2171367

  13. Xuezhou Zhu, Zhi Deng, Yulan Li, Yinong Liu, Qian Yue, Jin Li: A cryogenic ultra-low noise CMOS preamplifier for point-contact HPGe detectors. IEEE Nuclear Science Symp. and Medical Imaging Conf. (NSS/MIC), 2011, pp. 766 – 769. DOI 10.1109/NSSMIC.2011.6154219

  14. Cattadori C., Giachero A., Gotti C., Maino M., Pessina G.: GeFRO, a new front-end approach for the phase II of the GERDA experiment. IEEE Nuclear Science Symp. and Medical Imaging Conf (NSS/MIC), 2011, pp. 1463 – 1465. DOI 10.1109/NSSMIC.2011.6154349

  15. Snoeij M.F., Ivanov M.V.: A 36V JFET-input bipolar operational amplifier with 1μV/°C maximum offset drift and −126dB total harmonic distortion. IEEE Int. Solid-State Circ. Conf. Digest of Technical Papers (ISSCC), 2011, pp. 248 – 250. DOI 10.1109/ISSCC.2011.5746305

  16. Xun Gong, Josifovic I., Ferreira J.A.: Comprehensive CM filter design to suppress conducted EMI for SiC-JFET motor drives. IEEE Int. Conf. on Power Electronics and ECCE Asia (ICPE & ECCE), 2011, pp. 720 – 727. DOI 10.1109/ICPE.2011.5944649

  17. Rodriguez A. L., Jimenez Tejada J.A., Gonzalez M.M., Planes M.R., Varo P.L., Godoy A.: Study of 1/f and generation-recombination noise in four gate transistors. Int. Conf on Noise and Fluctuations (ICNF), 2011, pp. 283 – 286. DOI 10.1109/ICNF.2011.5994322

  18. Robutel R., Martin C., Morel H., Mattavelli P., Boroyevitch D., Meuret R., Gazel N.: Integrated common mode capacitors for SiC JFET inverters. Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), 2011, pp. 196 – 202. DOI 10.1109/APEC.2011.5744597

  19. Dubois F., Risaletto D., Bergogne D., Morel H., Buttay C., Meuret R.: Active protections for normally-on SiC JFETs. Proc. of the European Conf. on Power Electronics and Applications (EPE), 2011, pp. 1 – 10. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6020375&isnumber=6020091

  20. Pullia A., Zocca F., Riboldi S., Budjas D., D'Andragora A., Cattadori C.: Cryogenic Performance of a Low-Noise JFET-CMOS Preamplifier for HPGe Detectors. IEEE Trans on Nuclear Science, Vol. 57, no. 2, 2010, pp. 737 – 742. DOI 10.1109/TNS.2009.2038697

  21. Bombelli L., Fiorini C., Frizzi T., Nava R., Greppi A., Longoni A.: Low-noise CMOS charge preamplifier for X-ray spectroscopy detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), 2010, pp. 135 – 138. DOI 10.1109/NSSMIC.2010.5873732

  22. Yun Shi, Rassel R.M., Phelps R.A., Candra P., Hershberger D.B., Xiaowei Tian, Sweeney S.L., Rascoe J., Rainey B.-A., Dunn J., Harame D.: A cost-competitive high performance Junction-FET (JFET) in CMOS process for RF & analog applications. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2010, pp. 237 – 240. DOI 10.1109/RFIC.2010.5477348

  23. Zhikuan Wang, Zhaohuan Tang, Yong Liu, Guohua Shui, Hongqi Ou, Yonghui Yang: Design and application of the high-voltage ultra-shallow junction PJFET. Int. Workshop on Junction Technology (IWJT), 2010, pp. 1 – 4. DOI 10.1109/IWJT.2010.5474906

  24. Wrzecionko B., Kach S., Bortis D., Biela J., Kolar J.W.: Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs. Conf. on IEEE Industrial Electronics Society (IECON), 2010, pp. 605 – 612. DOI 10.1109/IECON.2010.5675214

  25. Zat́ko B., Dubecký F., Boháček P., Nečas V., Ryć L.: Detection of soft X-rays using semi-insulating GaAs detector. Int. Conf. on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010, pp. 219 – 222. DOI 10.1109/ASDAM.2010.5667023

  26. Chaste J., Pallecchi E., Morfin P., Feve G., Kontos T., Berroir J.-M., Hakonen P., Placais B.: Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters, Vol. 96, no. 19, 2010, pp. 192103 – 192103-3. DOI 10.1063/1.3425889

  27. Hu Zhiyong, Quan Haiyang, Zhang Fuqiang, Wang Peisheng: Ultra-Low Noise Charge Sensitive Amplifier for MEMS Gyroscope. Int. Conf. on MEMS, NANO, and Smart Systems (ICMENS), 2009, pp. 29 – 32. DOI 10.1109/ICMENS.2009.20

  28. Le H.B., Nam J.W., Ryu S.T., Lee S.G.: Single-chip A/D converter for digital microphones with on-chip preamplifier and time-domain noise isolation. Electronics Lett., Vol. 45, no. 3, 2009, pp. 151 – 153. DOI 10.1049/el:20093009

  29. Noguchi T., Suroso: New topologies of multi-level power converters for use of next-generation ultra high-speed switching devices. IEEE Energy Conversion Congress and Exposition (ECCE), 2009, pp. 1968 – 1975. DOI 10.1109/ECCE.2009.5316432

  30. Pullia A., Zocca F.: Extending the dynamic range of a charge-preamplifier far beyond its saturation limit: A 0.35μm CMOS preamplifier for germanium detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), 2009, pp. 1919 – 1923. DOI 10.1109/NSSMIC.2009.5402152

  31. Pullia A., Zocca F.: Fast low-impedance output stage for CMOS charge preamplifiers able to work at cryogenic temperatures. IEEE Nuclear Science Symp. Conf. Record (NSS), 2009, pp. 353 – 356. DOI 10.1109/NSSMIC.2009.5401702

  32. Safavi-Naeini M., Franklin D.R., Lerch M.L.F., Petasecca M., Pignatel G.U., Reinhard M., Betta G.-F.D., Zorzi N., Rosenfeld A.B.: Evaluation of Silicon Detectors With Integrated JFET for Biomedical Applications. IEEE Trans on Nuclear Science, Vol. 56, no. 3, 2009, pp. 1051 – 1055. DOI 10.1109/TNS.2009.2013949

  33. Levinzon F. A.: Ultra-Low-Noise High-Input Impedance Amplifier for Low-Frequency Measurement Applications. IEEE Trans on CAS I : Regular Papers, Vol. 55, no. 7, 2008, pp. 1815 – 1822. DOI 10.1109/TCSI.2008.918213

  34. Pullia A., Zocca F., Riboldi S., Budjas D., D'Andragora A., Cattadori C.: A cryogenic low-noise JFET-CMOS preamplifier for the HPGe detectors of GERDA. IEEE Nuclear Science Symp. Conf. Record (NSS), 2008, pp. 2056 – 2060. DOI 10.1109/NSSMIC.2008.4774881

  35. Bowers D.F.: A 37nV/√Hz 2.5V reference based on dual-threshold JFET technology. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2008, pp. 13 – 16. DOI 10.1109/BIPOL.2008.4662702

  36. Pullia A., Zocca F., Riboldi S.: A JFET-CMOS Fast Preamplifier for Segmented Germanium Detectors. IEEE Trans on Nuclear Science, Vol. 55, no. 1, 2008, pp. 591 – 594. DOI 10.1109/TNS.2007.914022

  37. Fujiwara M., Nagata H., Matsuo H., Sasaki M.: Optical reduction of low frequency noise in cryogenic GaAs junction field effect transistor. Applied Physics Letters, Vol. 93, no. 4, 2008, pp. 043503 – 043503-3. DOI 10.1063/1.2961034

  38. Kawazu N., Kikuchi K., Akai D., Sawada K., Ishida M.: Integrated 32 x 32 pyroelectric IR sensor array in NMOS/JFET circuitry using highly (001) oriented PZT thin films on epitaxial Y-AL2O3/Si substrates. IEEE Int. Symp. on the Applications of Ferroelectrics (ISAF), Vol. 2, 2008, pp. 1 – 2. DOI 10.1109/ISAF.2008.4693727

  39. Tejada J.A.J., Rodriguez A.L., Godoy A., Villanueva J.A.L., Gomez-Campos F.M., Rodriguez-Bolivar S.: A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors. IEEE Trans on ED, Vol. 55, no. 3, 2008, pp. 896 – 903. DOI 10.1109/TED.2007.914473

  40. Pullia A., Zocca F., Riboldi S., Budjas D., D'Andragora A., Cattadori C.: A cryogenic low-noise JFET-CMOS preamplifier for the HPGe detectors of GERDA. IEEE Nuclear Science Symp. Conf. Record (NSS), 2008, pp. 2056 – 2060. DOI 10.1109/NSSMIC.2008.4774881

  41. Zhou X.J., Fleetwood D.M., Schrimpf R.D., Faccio F., Gonella L.: Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors. IEEE Trans on Nuclear Science, Vol. 55, no. 6, 2008, pp. 2975 – 2980. DOI 10.1109/TNS.2008.2005107

  42. Ke Lin, Dolmanan Surani Bin, Shen Lu, Vijila Chellappan, Chua Soo Jin, Png Rui-Qi, Chia Perq-Jon, Chua Lay-Lay, Ho Peter K-H.: Impact of self-assembled monolayer on low frequency noise of organic thin film transistors. Applied Physics Letters, Vol. 93, no. 15, 2008, pp. 153507 – 153507-3. DOI 10.1063/1.2995856

  43. Moryashin A., Obolensky S., Perov M., Yakimov A.: Natural ageing effects of Schottky-gate GaAs FETs in current-voltage characteristics and in 1/f noise spectrum. Radiophysics & Quantum Electronics, Vol. 50, no. 2, 2007, pp. 135 – 145. DOI 10.1007/s11141-007-0012-1

  44. Schwartz W., Yasuda H., Steinmann P., Boyd W., Meinel W., Hannaman D., Parsons S.: BiCom3HV - A 36V Complementary SiGe Bipolar- and JFET-Technology. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2007, pp. 42 – 45. DOI 10.1109/BIPOL.2007.4351835

  45. Fiorini C., Gola A., Klatka T., Bombelli L., Frizzi T., Peloso R., Longoni A., Niculae A.: A CMOS pulsed-reset preamplifier for silicon drift detectors with on-chip JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 4, 2007, pp. 2519 – 2521. DOI 10.1109/NSSMIC.2007.4436665

  46. Herrmann S., Buttler W., Hartmann R., Holl P., Meidinger N., Strueder L.: Mixed signal pnCCD readout ASIC for the future X-Ray astronomy mission eROSITA. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 3, 2007, pp. 2398 – 2403. DOI 10.1109/NSSMIC.2007.4436626

  47. Pullia A., Zocca F., Oberlack U., Olsen C., Shagin P.: A cold low noise preamplifier for use in liquid Xenon. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2007, pp. 424 – 428. DOI 10.1109/NSSMIC.2007.4436362

  48. Boiano C., Bassini R., Pagano A., Pullia A., Riboldi S.: A ultra fast hybrid charge-sensitive preamplifier for high-capacitance detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2007, pp. 338 – 339. DOI 10.1109/NSSMIC.2007.4436343

  49. Li T. F., Pashkin Yu. A., Astafiev O., Nakamura Y., Tsai J. S., Im H.: Low-frequency charge noise in suspended aluminum single-electron transistors. Applied Physics Letters, Vol. 91, no. 3, 2007, pp.033107 – 033107-3. DOI 10.1063/1.2759260

  50. Jae-Hong Jung, Jong-Ho Lee: Extraction of Substrate Resistance in Bulk FinFETs Through RF Modeling. IEEE Microwave and Wireless Components Letters, Vol. 17, no. 5, 2007, pp. 358 – 360. DOI 10.1109/LMWC.2007.895709

  51. Pichon L., Boukhenoufa A., Cordier C., Cretu B.: Numerical Simulation of Low-Frequency Noise in Polysilicon Thin-Film Transistors. IEEE Electron Device Letters, Vol. 28, no. 8, 2007, pp. 716 – 718. DOI 10.1109/LED.2007.900849

  52. Ciccognani W., Giannini F., Limiti E., Nanni A., Serino A., Lanzieri C., Peroni M.: Extraction of Microwave FET Noise Parameters Using Frequency- Dependent Equivalent Noise Temperatures. Microwave and Optoelectronics Conf., (IMOC 2007), 2007, pp. 856 – 860. DOI 10.1109/IMOC.2007.4404392

  53. Zocca F., Pullia A.: Design Criteria for the Optimization of Hybrid Charge-Sensitive Preamplifiers for High Resolution g-Ray Spectroscopy. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2006, pp. 360 – 364. DOI 10.1109/NSSMIC.2006.356176

  54. Robertson R.G.H., Van Wechel T.D.: Parametric Amplifier for Ionization Detector Applications. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2006, pp. 223 – 225. DOI 10.1109/NSSMIC.2006.356144

  55. Arnaboldi C., Pessina G.: A Front-End Readout for Micro Bolometers Having Sub Nano Volt Noise Floor. IEEE Trans on Nuclear Science, Vol. 53, no. 5, 2006, pp. 2861 – 2868. DOI 10.1109/TNS.2006.881096

  56. Fiorini C., Porro M., Frizzi T.: An 8-Channel DRAGO Readout Circuit for Silicon Detectors With Integrated Front-End JFET. IEEE Trans on Nuclear Science, Vol. 53, no. 5, 2006, pp. 2998 – 3003. DOI 10.1109/TNS.2006.882605

  57. Betta G.-F.D., Boscardin M., Fenotti F., Pancheri L., Piemonte C., Ratti L., Zorzi N.: Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology. IEEE Trans on Nuclear Science, Vol. 53, no. 5, 2006, pp. 3004 – 3012. DOI 10.1109/TNS.2006.882606

  58. Castoldi A., Galimberti A., Guazzoni C.: Impact of non ideal signal transfer of on-chip source-follower JFET on Silicon Drift Detector noise performance. IEEE Nuclear Science Symp. Conf. Record, Vol. 2, 2006, pp. 1263 – 1267. DOI 10.1109/NSSMIC.2006.356073

  59. Fiorini C., Frizzi T., Longoni A., Porro M.: A CMOS Readout Circuit for Silicon Drift Detectors With on-Clip JFET and Feedback Capacitor. IEEE Trans on Nuclear Science, Vol. 53, no. 4, 2006, pp. 2196 – 2203. DOI 10.1109/TNS.2006.878131

  60. Frizzi T., Bombelli L., Fiorini C., Longoni A.: The SIDDHARTA chip: a CMOS multi-channel circuit for Silicon Drift Detectors Readout in Exotic Atoms Research. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 2, 2006, pp. 850 – 856. DOI 10.1109/NSSMIC.2006.355983

  61. Akarvardar K., Dufrene B.M., Cristoloveanu S., Gentil P., Blalock B.J., Mojarradi M.M.: Low-frequency noise in SOI four-gate transistors. IEEE Trans on ED, Vol. 53, no. 4, 2006, pp. 829 – 835. DOI 10.1109/TED.2006.870272

  62. Sarpeshkar R., Salthouse C., Ji-Jon Sit, Baker M.W., Zhak S.M., Lu T.K.-T., Turicchia L., Balster S.: An ultra-low-power programmable analog bionic ear processor. IEEE Trans on Biomedical Eng., Vol. 52, no. 4, 2005, pp. 711 – 727. DOI 10.1109/TBME.2005.844043

  63. Levinzon F. A.: Measurement of low-frequency noise of modern low-noise junction field effect transistors. IEEE Trans on Instr. & Meas., Vol. 54, no. 6, 2005, pp. 2427 – 2432. DOI 10.1109/TIM.2005.858534

  64. Levinzon F. A.: Noise of piezoelectric accelerometer with integral FET amplifier. IEEE Sensors Journal, Vol. 5, no. 6, 2005, pp. 1235 – 1242. DOI 10.1109/JSEN.2005.859256

  65. Fiorini C., Bellini M., Gola A., Longoni A., Perotti F., Lechner P., Soltau H., Struder L.: A Monolithic Array of 77 Silicon Drift Detectors for X-Ray Spectroscopy and Gamma-Ray Imaging Applications. IEEE Trans on Nuclear Science, Vol. 52, no. 4, 2005, pp. 1165 – 1170. DOI 10.1109/TNS.2005.852727

  66. Nagata H., Kobayashi J., Matsuo H., Akiba M., Fujiwara M.: Cryogenic readout integrated circuits for submillimeter-wave camera. The Joint Int. Conf. on Infrared and Millimeter Waves & Int. Conf. on Terahertz Electronics (IRMMW-THz), Vol. 2, 2005, pp. 630 – 631. DOI 10.1109/ICIMW.2005.1572699

  67. Fiorini C., Frizzi T., Longoni A., Porro M.: A CMOS circuit for high-stability X-ray spectroscopy with silicon drift detectors with on-chip JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 2, 2005, pp. 901 – 903. DOI 10.1109/NSSMIC.2005.1596400

  68. Arnaboldi C., Pessina G.: A front-end readout for micro bolometers having sub nano volt noise floor. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2005, pp. 418 – 422. DOI 10.1109/NSSMIC.2005.1596284

  69. Yue Fu, Hei Wong, Liou J.J.: Modeling of Low-Frequency Noise in Junction Field-Effect Transistor with Self-Aligned Planer Technology. Int. Conf of Electron Devices and Solid-State Circuits (EDSSC), 2005, pp. 39 – 42. DOI 10.1109/EDSSC.2005.1635200

  70. Dalla Betta G.-F., Boscardin M., Candelori A., Fenotti F., Pancheri L., Piemonte C., Ratti L., Zorzi N.: An improved fabrication technology for silicon detectors with integrated JFET/MOSFET electronics. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 3, 2005, pp. 1422 – 1426. DOI 10.1109/NSSMIC.2005.1596587

  71. Akarvardar K., Dufrene B., Cristoloveanu S., Chroboczek J.A., Gentil P., Blalock B.J., Mojarradi M.: Surface vs. bulk noise in SOI four-gate transistors. IEEE Int. SOI Conf. (SOI), 2005, pp. 161 – 162. DOI 10.1109/SOI.2005.1563574

  72. Fiorini C., Porro M., Frizzi T.: A 8-channels low-noise CMOS circuit for silicon detectors with on-chip front-end JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2005, pp. 403 – 405. DOI 10.1109/NSSMIC.2005.1596280

  73. Jindal R.P.: Effect of induced gate noise at zero drain bias in field-effect transistors. IEEE Trans on ED, Vol. 52, no. 3, March 2005, pp 432 – 434. DOI 10.1109/TED.2005.843891

  74. Ghione G., Bonani F., Donati S., Bertazzi F., Conte G.: Physics-based noise modelling of semiconductor devices in large signal operation including low-frequency noise conversion effects. IEDM Technical Digest. IEEE Int. Electron Devices Meeting, 2005, pp. 212 – 215. DOI 10.1109/IEDM.2005.1609309

  75. Hansen K., Reckleben C.: Noise analysis of an Si-drift detector system with time-variant shaping. IEEE Trans on Nuclear Science, Vol. 51, no. 6, 2004, pp. 3845 – 3852. DOI 10.1109/TNS.2004.839369

  76. Arnaboldi C., Boella G., Panzeri E., Pessina G.: JFET transistors for low-noise applications at low frequency. IEEE Trans on Nuclear Science, Vol. 51, no. 6, 2004, pp. 2975 – 2982. DOI 10.1109/TNS.2004.839063

  77. Fiorini C., Porro M.: DRAGO chip: a low-noise CMOS preamplifier-shaper for silicon drift detectors with on-chip JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2004, pp. 47 – 49. DOI 10.1109/NSSMIC.2004.1462066

  78. Manghisoni M., Ratti L., Re V., Speziali V., Traversi G., Betta G.F.D., Boscardin M., Batignani G., Giorgi M., Bosisio L.: JFET front-end circuits integrated in a detector-grade silicon substrate. IEEE Trans on Nuclear Science, Vol. 50, no. 4, 2003, pp. 942 – 947. DOI 10.1109/TNS.2003.815177

  79. Betta G.F.D., Manghisoni M., Ratti L., Re V., Speziali V., Traversi G.: Effects of g-rays on JFET devices and circuits fabricated in a detector-compatible process. IEEE Trans on Nuclear Science, Vol. 50, no. 6, 2003, pp. 2474 – 2480.
    DOI 10.1109/TNS.2003.820631

  80. Riehl P.S., Scott K.L., Muller R.S., Howe R.T., Yasaitis J.A.: Electrostatic charge and field sensors based on micromechanical resonators. Journal of Microelectromechanical Systems, Vol. 12, no. 5, 2003, pp. 577 – 589. DOI 10.1109/JMEMS.2003.818066

  81. Baker M.W., Sarpeshkar R.: A low-power high-PSRR current-mode microphone preamplifier. IEEE Journal of SSC, Vol. 38, no. 10, 2003, pp. 1671 – 1678. DOI 10.1109/JSSC.2003.817255

  82. Arnaboldi C., Boella G., Panzeri E., Pessina G.: JFET transistors for low noise applications at low frequency. IEEE Nuclear Science Symp. Conf. Record, Vol. 2, 2003, pp. 1210 – 1214. DOI 10.1109/NSSMIC.2003.1351910

  83. Fiorini C., Longoni A., Perotti F., Labanti C., Rossi E., Lechner P., Soltau H., Struder L.: A monolithic array of silicon, drift detectors for high-resolution gamma-ray imaging. IEEE Trans on Nuclear Science, Vol. 49, no. 3, 2002, pp. 995 – 1000. DOI 10.1109/TNS.2002.1039603

  84. Manghisoni M., Ratti L., Re V., Speziali V., Graversi G., Betta G.F.D., Boscardin M., Batignani G., Giorgi M., Bosisio L.: JFET front-end circuits integrated in a detector-grade silicon substrate. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2002, pp. 116 – 120. DOI 10.1109/NSSMIC.2002.1239280

  85. Hofler T.J., Polydorou Lt.S.: A compact and inexpensive hydrophone with an internal ultra-low-noise preamp. OCEANS '02 MTS/IEEE, Vol. 4, 2002, pp. 2310 – 2314. DOI 10.1109/OCEANS.2002.1191989

  86. Vandamme L. K. J., Feyaerts R., Trefan Gy., Detcheverry C.: 1/f noise in pentacene and poly-thienylene vinylene thin film transistors. Journal of Applied Physics, Vol. 91, no. 2, 2002, pp. 719 – 723. DOI 10.1063/1.1423389

  87. Grassi V., Colombo C.F., Camin D.V.: Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs. IEEE Trans on ED, Vol. 48, no. 12, 2001, pp. 2899 – 2905. DOI 10.1109/16.974725

  88. Pichler B.J., Pimpl W., Buttler W., Kotoulas L., Boning G., Rafecas M., Lorenz E., Ziegler S.I.: Integrated low-noise low-power fast charge-sensitive preamplifier for avalanche photodiodes in JFET-CMOS technology. IEEE Trans on Nuclear Science, Vol. 48, no. 6, 2001, pp. 2370 – 2374. DOI 10.1109/23.983270

  89. Oh E. S., Sharp E. H., Fixsen D. J., Cheng E. S., Inman C. A., Silver C.: A low noise cryogenic preamplifier for the cosmic microwave background radiation anisotropy experiment. Review of Scientific Instruments, Vol. 72, no. 6, 2001, pp. 2735 – 2737. DOI 10.1063/1.1372167

  90. Fujihara A., Miyamoto H., Yamanoguchi K., Mizuki E., Samoto N., Tanaka S.: V-band MMIC LNA using superlattice-inserted InP heterojunction FETs. IEEE Int. Conf. On Indium Phosphide and Related Materials (ICIPRM), 2001, pp. 622 – 625. DOI 10.1109/ICIPRM.2001.929233

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Links to JFET

http://www-inst.eecs.berkeley.edu/~ee217/sp03/projectsSP99/Dist_Amp_b+r.pdf

http://khup.com/keyword/page-2/fet-theory.html


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