Home
Glossary
Acronyms
Beware
Contact
 
 

NOISE in JFET

Noise is the most impertinent of all forms of interruption.

It is not only an interruption, but is also a disruption of thought”

 Arthur Schopenhauer (1788 – 1860)

  1. Durdaut P., Penner V., Kirchhof C., et al.: Noise of a JFET Charge Amplifier for Piezoelectric Sensors. IEEE Sensors Journal, Vol. 17, no. 22, 2017, pp. 7364 – 7371. DOI 10.1109/JSEN.2017.2759000

  2. Stoop R.L., Thodkar Kishan, Sessolo M., et al.: Charge Noise in Organic Electrochemical Transistors. Physical Review Applied, Vol. 7, no. 1, 2017, Article # 014009. DOI 10.1103/PhysRevApplied.7.014009

  3. Pospieszalski Marian W.: On the Dependence of FET Noise Model Parameters on Ambient Temperature. IEEE Radio and Wireless Symp. (RWS), 2017 Book Series: IEEE Radio and Wireless Symp., pp. 159 – 161. DOI 10.1109/RWS.2017.7885975

  4. Umetani Kazuhiro, Yagyu Keisuke, Hiraki Eiji: A design guideline of parasitic inductance for preventing oscillatory false triggering of fast switching GaN-FET. IEEJ Trans on Electrical & Electronic Engineering, Vol. 11, Supplement: S2, 2016, pp. S84 – S90. DOI 10.1002/tee.22339

  5. Crupi G., Caddemi A., Schreurs D.M. M.-P., Dambrine G.: The Large World of FET Small-Signal Equivalent Circuits. Int. J. of RF and Microwave Computer-Aided Engineering, Vol. 26, no. 9, 2016, pp. 749 – 762. DOI 10.1002/mmce.21028

  6. Park Chan Hyeong, Chung In-Young: Modeling of Electrolyte Thermal Noise in Electrolyte-Oxide-Semiconductor Field-Effect Transistors. J. of Semiconductor Technology & Science, Vol. 16, no. 1, 2016, pp. 106 – 111. DOI 10.5573/JSTS.2016.16.1.106

  7. Iizuka Tetsuya, Abidi Asad A.: FET-R-C Circuits: A Unified Treatment-Part II: Extension to Multi-Paths, Noise Figure, and Driving-Point Impedance. IEEE Trans on CAS I : Regular Papers, Vol. 63, no. 9, 2016, pp. 1337 – 1348. DOI 10.1109/TCSI.2016.2591279

  8. Kim Yonghun, Park Woojin, Yang Jin Ho, et al.: Reduction of low-frequency noise in multilayer MoS2 FETs using a Fermi-level depinning layer. Physica Status Solidi - Rapid Research Lett., Vol. 10, no. 8, 2016, pp. 634 – 638. DOI 10.1002/pssr.201600136

  9. Najari Montassar, Makni Wafa, Samet Hekmet, et al.: Noise and Schottky Barriers Effects in Carbon Nanotube Field Effect Transistor Performances and Its Application in Analog Circuit Design. J. of Nanoelectronics & Optoelectronics, Vol. 11, no. 4, 2016, pp. 416 – 424. DOI 10.1166/jno.2016.1928

  10. Neves F.S., Agopian P.G.D., Martino J.A., et al.: Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Trans on ED, Vol. 63, no. 4, 2016, pp. 1658 – 1665. DOI 10.1109/TED.2016.2533360

  11. Hu Wei, Zhuang Yiqi, Bao Junlin, et al.: Total dose effects on the g-r noise of JFET transistors. J. of Semiconductors, Vol. 37, no. 3, 2016, Article # UNSP 034005. DOI 10.1088/1674-4926/37/3/034005

  12. Opondo Noah, Ramadurgam Sarath, Yang Chen, et al.: Trap studies in silicon nanowire junctionless transistors using low-frequency noise. J. of Vacuum Science & Technology B Vol. 34, no. 1, 2016, Article # 011804. DOI 10.1116/1.4939787

  13. Bhattacharyya Semonti, Banerjee Mitali, Nhalil Hariharan, et al.: Bulk-Induced 1/f Noise at the Surface of Three-Dimensional Topological Insulators. ACS Nano, Vol. 9, no. 12, 2015, pp. 12529 – 12536. DOI 10.1021/acsnano.5b06163

  14. Goswami Rupam, Bhowmick Brinda, Baishya Srimanta: Electrical noise in Circular Gate Tunnel FET in presence of interface traps. Superlattices and Microstructures, Vol. 86, 2015, pp. 342 – 354. DOI 10.1016/j.spmi.2015.07.064

  15. Bianco F., Perenzoni D., Convertino D., et al.: Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide. Applied Physics Lett., Vol. 107, no. 13, 2015, Article # 131104. https://doi.org/10.1063/1.4932091

  16. Ko Seung-Pil, Shin Jong Mok, Kim Yong Jin, et al.: Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors. Applied Physics Lett., Vol. 107, no. 24, 2015, Article # 242102. https://doi.org/10.1063/1.4937618

  17. Lioliou, G., Barnett, A.M.: Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET. Nuclear Instruments & Methods in Physics Research: Section A - Accelerators Spectrometers Detectors & Associated Equipment, Vol. 801, 2015, pp. 63 – 72. DOI 10.1016/j.nima.2015.08.042

  18. Lin Yen-Fu, Xu Yong, Lin Che-Yi, et al.: Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors. Advanced Materials, Vol. 27, no. 42, 2015, pp. 6612 – 6619. DOI 10.1002/adma.201502677

  19. Lezzi F., Ferrari G., Pennetta C., et al.: Suppression of Low-Frequency Electronic Noise in Polymer Nanowire Field-Effect Transistors. NANO Lett., Vol. 15, no. 11, 2015, pp. 7245 – 7252. DOI 10.1021/acs.nanolett.5b02103

  20. Crosser M.S., Brown M.A., McEuen P.L., et al.: Determination of the Thermal Noise Limit of Graphene Biotransistors. NANO Lett., Vol. 15, no. 8, 2015, pp. 5404 – 5407. DOI 10.1021/acs.nanolett.5b01788

  21. Stolyarov M.A., Liu Guanxiong, Rumyantsev S.L., et al.: Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors. Applied Physics Lett., Vol. 107, no. 2, 2015, Article # 023106. https://doi.org/10.1063/1.4926872

  22. Jazaeri Farzan, Sallese Jean-Michel: Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs. IEEE Trans on ED, Vol. 62, no. 8, 2015, pp. 2593 – 2597. DOI 10.1109/TED.2015.2437954

  23. Gong Xun, Ferreira Jan Abraham: Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives. IEEE Trans on Power Electronics, Vol. 29, no. 4, 2014, pp. 1757 – 1767. DOI 10.1109/TPEL.2013.2271301

  24. Thathachary Arun V., Agrawal Nidhi, Liu Lu, et al.: Electron Transport in Multigate In(x)Ga1-x As Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature. NANO Lett., Vol. 14, no. 2, 2014, pp. 626 – 633. DOI 10.1021/nl4038399

  25. Gong Xun, Ferreira J.A.: Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives. IEEE Trans on Power Electronics, Vol. 29, no. 4, 2014, pp. 1757 – 1767. DOI 10.1109/TPEL.2013.2271301

  26. Gong Xun, Josifovic I., Ferreira J.A.: Modeling and Reduction of Conducted EMI of Inverters With SiC JFETs on Insulated Metal Substrate. IEEE Trans on Power Electronics, Vol. 28, no. 7, 2013, pp. 3138 – 3146. DOI 10.1109/TPEL.2012.2221747

  27. Hibi Y., Matsuo H., Sekiguchi S., Ikeda H., Fujiwara M.: Evaluation of Submillimeter/Terahertz Camera Performance With the Cryogenic Multi-Channel Read Out System. IEEE Trans on Terahertz Science and Technology, Vol. 3, no. 4, 2013, pp. 422 – 427. DOI 10.1109/TTHZ.2013.2258714

  28. Moh T.S.Y., Nie M., Pandraud G., de Smet L.C.P.M., Sudholter E.J.R., Huang Q-A., Sarro P.M.: Effect of silicon nanowire etching on signal-to-noise ratio of SiNW FETs for (bio)sensor applications. Electronics Lett., Vol. 49, no. 13, 2013, pp. 782 – 784. DOI 10.1049/el.2013.1397

  29. Han C.Y., Qian L.X., Leung C.H., Che C.M., Lai P.T.: A Low-frequency Noise Model with Carrier Generation-Recombination Process for Pentacene Organic Thin-film Transistor. Journal of Applied Physics, Vol. 114, no. 4, 2013, pp. 044503.1 – 044503.6. DOI 10.1063/1.4816103

  30. Holloway G.W., Song Yipu, Haapamaki C.M., LaPierre R.R., Baugh J.: Trapped Charge Dynamics in InAs Nanowires. Journal of Applied Physics, Vol. 113, no. 2, 2013, pp. 024511-1 – 024511-5. DOI 10.1063/1.4773820

  31. Wrzecionko B., Bortis D., Biela J., Kolar J.W.: Novel AC-Coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETs. IEEE Trans on Power Electronics, Vol. 27, no. 7, 2012, pp. 3452 – 3463. DOI 10.1109/TPEL.2011.2182209

  32. Ruxi Wang, Blanchette H.F., Boroyevich D., Mattavelli P.: EMI noise attenuation prediction with mask impedance in motor drive system. Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), 2012, pp. 2279 – 2284. DOI 10.1109/APEC.2012.6166140

  33. Giannoutsos S. V., Pachos P., Manias, Stefanos N.: Performance evaluation of a proposed gate drive circuit for normally-ON SiC JFETs used in PV inverter applications. IEEE Int. Energy Conf. and Exhibition (ENERGYCON), 2012, pp. 26 – 31. DOI 10.1109/EnergyCon.2012.6347765

  34. Amponsah K., Lal A.: Multiple tip nano probe actuators with integrated JFETs. IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS), 2012, pp. 1356 – 1359. DOI 10.1109/MEMSYS.2012.6170418

  35. Gong Xun, Ferreira J.A.: Modeling and reduction of conducted EMI in SiC JFET motor drives with insulated metal substrate. IEEE Energy Conversion Congress and Exposition (ECCE), 2012, pp. 629 – 636. DOI 10.1109/ECCE.2012.6342762

  36. Arnaboldi C., Giachero A., Gotti C., Maino M., Pessina G.: An Amplifier for Bolometric Detectors. IEEE Trans on Nuclear Science, Vol. 58, no. 6, 2011, pp. 3204 – 3211. DOI 10.1109/TNS.2011.2171367

  37. Xuezhou Zhu, Zhi Deng, Yulan Li, Yinong Liu, Qian Yue, Jin Li: A cryogenic ultra-low noise CMOS preamplifier for point-contact HPGe detectors. IEEE Nuclear Science Symp. and Medical Imaging Conf. (NSS/MIC), 2011, pp. 766 – 769. DOI 10.1109/NSSMIC.2011.6154219

  38. Cattadori C., Giachero A., Gotti C., Maino M., Pessina G.: GeFRO, a new front-end approach for the phase II of the GERDA experiment. IEEE Nuclear Science Symp. and Medical Imaging Conf (NSS/MIC), 2011, pp. 1463 – 1465. DOI 10.1109/NSSMIC.2011.6154349

  39. Snoeij M.F., Ivanov M.V.: A 36V JFET-input bipolar operational amplifier with 1μV/°C maximum offset drift and −126dB total harmonic distortion. IEEE Int. Solid-State Circ. Conf. Digest of Technical Papers (ISSCC), 2011, pp. 248 – 250. DOI 10.1109/ISSCC.2011.5746305

  40. Xun Gong, Josifovic I., Ferreira J.A.: Comprehensive CM filter design to suppress conducted EMI for SiC-JFET motor drives. IEEE Int. Conf. on Power Electronics and ECCE Asia (ICPE & ECCE), 2011, pp. 720 – 727. DOI 10.1109/ICPE.2011.5944649

  41. Rodriguez A. L., Jimenez Tejada J.A., Gonzalez M.M., Planes M.R., Varo P.L., Godoy A.: Study of 1/f and generation-recombination noise in four gate transistors. Int. Conf on Noise and Fluctuations (ICNF), 2011, pp. 283 – 286. DOI 10.1109/ICNF.2011.5994322

  42. Robutel R., Martin C., Morel H., Mattavelli P., Boroyevitch D., Meuret R., Gazel N.: Integrated common mode capacitors for SiC JFET inverters. Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), 2011, pp. 196 – 202. DOI 10.1109/APEC.2011.5744597

  43. Dubois F., Risaletto D., Bergogne D., Morel H., Buttay C., Meuret R.: Active protections for normally-on SiC JFETs. Proc. of the European Conf. on Power Electronics and Applications (EPE), 2011, pp. 1 – 10. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6020375&isnumber=6020091

  44. Pullia A., Zocca F., Riboldi S., Budjas D., D'Andragora A., Cattadori C.: Cryogenic Performance of a Low-Noise JFET-CMOS Preamplifier for HPGe Detectors. IEEE Trans on Nuclear Science, Vol. 57, no. 2, 2010, pp. 737 – 742. DOI 10.1109/TNS.2009.2038697

  45. Bombelli L., Fiorini C., Frizzi T., Nava R., Greppi A., Longoni A.: Low-noise CMOS charge preamplifier for X-ray spectroscopy detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), 2010, pp. 135 – 138. DOI 10.1109/NSSMIC.2010.5873732

  46. Yun Shi, Rassel R.M., Phelps R.A., Candra P., Hershberger D.B., Xiaowei Tian, Sweeney S.L., Rascoe J., Rainey B.-A., Dunn J., Harame D.: A cost-competitive high performance Junction-FET (JFET) in CMOS process for RF & analog applications. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2010, pp. 237 – 240. DOI 10.1109/RFIC.2010.5477348

  47. Zhikuan Wang, Zhaohuan Tang, Yong Liu, Guohua Shui, Hongqi Ou, Yonghui Yang: Design and application of the high-voltage ultra-shallow junction PJFET. Int. Workshop on Junction Technology (IWJT), 2010, pp. 1 – 4. DOI 10.1109/IWJT.2010.5474906

  48. Wrzecionko B., Kach S., Bortis D., Biela J., Kolar J.W.: Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs. Conf. on IEEE Industrial Electronics Society (IECON), 2010, pp. 605 – 612. DOI 10.1109/IECON.2010.5675214

  49. Zat́ko B., Dubecký F., Boháček P., Nečas V., Ryć L.: Detection of soft X-rays using semi-insulating GaAs detector. Int. Conf. on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010, pp. 219 – 222. DOI 10.1109/ASDAM.2010.5667023

  50. Chaste J., Pallecchi E., Morfin P., Feve G., Kontos T., Berroir J.-M., Hakonen P., Placais B.: Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters, Vol. 96, no. 19, 2010, pp. 192103 – 192103-3. DOI 10.1063/1.3425889

  51. Hu Zhiyong, Quan Haiyang, Zhang Fuqiang, Wang Peisheng: Ultra-Low Noise Charge Sensitive Amplifier for MEMS Gyroscope. Int. Conf. on MEMS, NANO, and Smart Systems (ICMENS), 2009, pp. 29 – 32. DOI 10.1109/ICMENS.2009.20

  52. Le H.B., Nam J.W., Ryu S.T., Lee S.G.: Single-chip A/D converter for digital microphones with on-chip preamplifier and time-domain noise isolation. Electronics Lett., Vol. 45, no. 3, 2009, pp. 151 – 153. DOI 10.1049/el:20093009

  53. Noguchi T., Suroso: New topologies of multi-level power converters for use of next-generation ultra high-speed switching devices. IEEE Energy Conversion Congress and Exposition (ECCE), 2009, pp. 1968 – 1975. DOI 10.1109/ECCE.2009.5316432

  54. Pullia A., Zocca F.: Extending the dynamic range of a charge-preamplifier far beyond its saturation limit: A 0.35μm CMOS preamplifier for germanium detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), 2009, pp. 1919 – 1923. DOI 10.1109/NSSMIC.2009.5402152

  55. Pullia A., Zocca F.: Fast low-impedance output stage for CMOS charge preamplifiers able to work at cryogenic temperatures. IEEE Nuclear Science Symp. Conf. Record (NSS), 2009, pp. 353 – 356. DOI 10.1109/NSSMIC.2009.5401702

  56. Safavi-Naeini M., Franklin D.R., Lerch M.L.F., Petasecca M., Pignatel G.U., Reinhard M., Betta G.-F.D., Zorzi N., Rosenfeld A.B.: Evaluation of Silicon Detectors With Integrated JFET for Biomedical Applications. IEEE Trans on Nuclear Science, Vol. 56, no. 3, 2009, pp. 1051 – 1055. DOI 10.1109/TNS.2009.2013949

  57. Levinzon F. A.: Ultra-Low-Noise High-Input Impedance Amplifier for Low-Frequency Measurement Applications. IEEE Trans on CAS I : Regular Papers, Vol. 55, no. 7, 2008, pp. 1815 – 1822. DOI 10.1109/TCSI.2008.918213

  58. Pullia A., Zocca F., Riboldi S., Budjas D., D'Andragora A., Cattadori C.: A cryogenic low-noise JFET-CMOS preamplifier for the HPGe detectors of GERDA. IEEE Nuclear Science Symp. Conf. Record (NSS), 2008, pp. 2056 – 2060. DOI 10.1109/NSSMIC.2008.4774881

  59. S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, A. Motayed, A.V. Davydov: Low-frequency noise in GaN nanowire transistors. J. Appl. Phys., Vol. 103, no. 6, 2008, Article # 064501. DOI 10.1063/1.2895398

  60. Bowers D.F.: A 37nV/√Hz 2.5V reference based on dual-threshold JFET technology. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2008, pp. 13 – 16. DOI 10.1109/BIPOL.2008.4662702

  61. Pullia A., Zocca F., Riboldi S.: A JFET-CMOS Fast Preamplifier for Segmented Germanium Detectors. IEEE Trans on Nuclear Science, Vol. 55, no. 1, 2008, pp. 591 – 594. DOI 10.1109/TNS.2007.914022

  62. Fujiwara M., Nagata H., Matsuo H., Sasaki M.: Optical reduction of low frequency noise in cryogenic GaAs junction field effect transistor. Applied Physics Letters, Vol. 93, no. 4, 2008, pp. 043503 – 043503-3. DOI 10.1063/1.2961034

  63. Kawazu N., Kikuchi K., Akai D., Sawada K., Ishida M.: Integrated 32 x 32 pyroelectric IR sensor array in NMOS/JFET circuitry using highly (001) oriented PZT thin films on epitaxial Y-AL2O3/Si substrates. IEEE Int. Symp. on the Applications of Ferroelectrics (ISAF), Vol. 2, 2008, pp. 1 – 2. DOI 10.1109/ISAF.2008.4693727

  64. Tejada J.A.J., Rodriguez A.L., Godoy A., Villanueva J.A.L., Gomez-Campos F.M., Rodriguez-Bolivar S.: A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors. IEEE Trans on ED, Vol. 55, no. 3, 2008, pp. 896 – 903. DOI 10.1109/TED.2007.914473

  65. Pullia A., Zocca F., Riboldi S., Budjas D., D'Andragora A., Cattadori C.: A cryogenic low-noise JFET-CMOS preamplifier for the HPGe detectors of GERDA. IEEE Nuclear Science Symp. Conf. Record (NSS), 2008, pp. 2056 – 2060. DOI 10.1109/NSSMIC.2008.4774881

  66. Zhou X.J., Fleetwood D.M., Schrimpf R.D., Faccio F., Gonella L.: Radiation Effects on the 1/f Noise of Field-Oxide Field Effect Transistors. IEEE Trans on Nuclear Science, Vol. 55, no. 6, 2008, pp. 2975 – 2980. DOI 10.1109/TNS.2008.2005107

  67. Ke Lin, Dolmanan Surani Bin, Shen Lu, Vijila Chellappan, Chua Soo Jin, Png Rui-Qi, Chia Perq-Jon, Chua Lay-Lay, Ho Peter K-H.: Impact of self-assembled monolayer on low frequency noise of organic thin film transistors. Applied Physics Letters, Vol. 93, no. 15, 2008, pp. 153507 – 153507-3. DOI 10.1063/1.2995856

  68. Moryashin A., Obolensky S., Perov M., Yakimov A.: Natural ageing effects of Schottky-gate GaAs FETs in current-voltage characteristics and in 1/f noise spectrum. Radiophysics & Quantum Electronics, Vol. 50, no. 2, 2007, pp. 135 – 145. DOI 10.1007/s11141-007-0012-1

  69. Schwartz W., Yasuda H., Steinmann P., Boyd W., Meinel W., Hannaman D., Parsons S.: BiCom3HV - A 36V Complementary SiGe Bipolar- and JFET-Technology. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2007, pp. 42 – 45. DOI 10.1109/BIPOL.2007.4351835

  70. Fiorini C., Gola A., Klatka T., Bombelli L., Frizzi T., Peloso R., Longoni A., Niculae A.: A CMOS pulsed-reset preamplifier for silicon drift detectors with on-chip JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 4, 2007, pp. 2519 – 2521. DOI 10.1109/NSSMIC.2007.4436665

  71. Herrmann S., Buttler W., Hartmann R., Holl P., Meidinger N., Strueder L.: Mixed signal pnCCD readout ASIC for the future X-Ray astronomy mission eROSITA. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 3, 2007, pp. 2398 – 2403. DOI 10.1109/NSSMIC.2007.4436626

  72. Pullia A., Zocca F., Oberlack U., Olsen C., Shagin P.: A cold low noise preamplifier for use in liquid Xenon. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2007, pp. 424 – 428. DOI 10.1109/NSSMIC.2007.4436362

  73. Boiano C., Bassini R., Pagano A., Pullia A., Riboldi S.: A ultra fast hybrid charge-sensitive preamplifier for high-capacitance detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2007, pp. 338 – 339. DOI 10.1109/NSSMIC.2007.4436343

  74. Li T. F., Pashkin Yu. A., Astafiev O., Nakamura Y., Tsai J. S., Im H.: Low-frequency charge noise in suspended aluminum single-electron transistors. Applied Physics Letters, Vol. 91, no. 3, 2007, pp.033107 – 033107-3. DOI 10.1063/1.2759260

  75. Jae-Hong Jung, Jong-Ho Lee: Extraction of Substrate Resistance in Bulk FinFETs Through RF Modeling. IEEE Microwave and Wireless Components Letters, Vol. 17, no. 5, 2007, pp. 358 – 360. DOI 10.1109/LMWC.2007.895709

  76. Pichon L., Boukhenoufa A., Cordier C., Cretu B.: Numerical Simulation of Low-Frequency Noise in Polysilicon Thin-Film Transistors. IEEE Electron Device Letters, Vol. 28, no. 8, 2007, pp. 716 – 718. DOI 10.1109/LED.2007.900849

  77. Ciccognani W., Giannini F., Limiti E., Nanni A., Serino A., Lanzieri C., Peroni M.: Extraction of Microwave FET Noise Parameters Using Frequency- Dependent Equivalent Noise Temperatures. Microwave and Optoelectronics Conf., (IMOC 2007), 2007, pp. 856 – 860. DOI 10.1109/IMOC.2007.4404392

  78. Zocca F., Pullia A.: Design Criteria for the Optimization of Hybrid Charge-Sensitive Preamplifiers for High Resolution g-Ray Spectroscopy. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2006, pp. 360 – 364. DOI 10.1109/NSSMIC.2006.356176

  79. Robertson R.G.H., Van Wechel T.D.: Parametric Amplifier for Ionization Detector Applications. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2006, pp. 223 – 225. DOI 10.1109/NSSMIC.2006.356144

  80. Arnaboldi C., Pessina G.: A Front-End Readout for Micro Bolometers Having Sub Nano Volt Noise Floor. IEEE Trans on Nuclear Science, Vol. 53, no. 5, 2006, pp. 2861 – 2868. DOI 10.1109/TNS.2006.881096

  81. Fiorini C., Porro M., Frizzi T.: An 8-Channel DRAGO Readout Circuit for Silicon Detectors With Integrated Front-End JFET. IEEE Trans on Nuclear Science, Vol. 53, no. 5, 2006, pp. 2998 – 3003. DOI 10.1109/TNS.2006.882605

  82. Betta G.-F.D., Boscardin M., Fenotti F., Pancheri L., Piemonte C., Ratti L., Zorzi N.: Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology. IEEE Trans on Nuclear Science, Vol. 53, no. 5, 2006, pp. 3004 – 3012. DOI 10.1109/TNS.2006.882606

  83. Castoldi A., Galimberti A., Guazzoni C.: Impact of non ideal signal transfer of on-chip source-follower JFET on Silicon Drift Detector noise performance. IEEE Nuclear Science Symp. Conf. Record, Vol. 2, 2006, pp. 1263 – 1267. DOI 10.1109/NSSMIC.2006.356073

  84. Fiorini C., Frizzi T., Longoni A., Porro M.: A CMOS Readout Circuit for Silicon Drift Detectors With on-Clip JFET and Feedback Capacitor. IEEE Trans on Nuclear Science, Vol. 53, no. 4, 2006, pp. 2196 – 2203. DOI 10.1109/TNS.2006.878131

  85. Frizzi T., Bombelli L., Fiorini C., Longoni A.: The SIDDHARTA chip: a CMOS multi-channel circuit for Silicon Drift Detectors Readout in Exotic Atoms Research. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 2, 2006, pp. 850 – 856. DOI 10.1109/NSSMIC.2006.355983

  86. Akarvardar K., Dufrene B.M., Cristoloveanu S., Gentil P., Blalock B.J., Mojarradi M.M.: Low-frequency noise in SOI four-gate transistors. IEEE Trans on ED, Vol. 53, no. 4, 2006, pp. 829 – 835. DOI 10.1109/TED.2006.870272

  87. Sarpeshkar R., Salthouse C., Ji-Jon Sit, Baker M.W., Zhak S.M., Lu T.K.-T., Turicchia L., Balster S.: An ultra-low-power programmable analog bionic ear processor. IEEE Trans on Biomedical Eng., Vol. 52, no. 4, 2005, pp. 711 – 727. DOI 10.1109/TBME.2005.844043

  88. Levinzon F. A.: Measurement of low-frequency noise of modern low-noise junction field effect transistors. IEEE Trans on Instr. & Meas., Vol. 54, no. 6, 2005, pp. 2427 – 2432. DOI 10.1109/TIM.2005.858534

  89. Levinzon F. A.: Noise of piezoelectric accelerometer with integral FET amplifier. IEEE Sensors Journal, Vol. 5, no. 6, 2005, pp. 1235 – 1242. DOI 10.1109/JSEN.2005.859256

  90. Fiorini C., Bellini M., Gola A., Longoni A., Perotti F., Lechner P., Soltau H., Struder L.: A Monolithic Array of 77 Silicon Drift Detectors for X-Ray Spectroscopy and Gamma-Ray Imaging Applications. IEEE Trans on Nuclear Science, Vol. 52, no. 4, 2005, pp. 1165 – 1170. DOI 10.1109/TNS.2005.852727

  91. Nagata H., Kobayashi J., Matsuo H., Akiba M., Fujiwara M.: Cryogenic readout integrated circuits for submillimeter-wave camera. The Joint Int. Conf. on Infrared and Millimeter Waves & Int. Conf. on Terahertz Electronics (IRMMW-THz), Vol. 2, 2005, pp. 630 – 631. DOI 10.1109/ICIMW.2005.1572699

  92. Fiorini C., Frizzi T., Longoni A., Porro M.: A CMOS circuit for high-stability X-ray spectroscopy with silicon drift detectors with on-chip JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 2, 2005, pp. 901 – 903. DOI 10.1109/NSSMIC.2005.1596400

  93. Arnaboldi C., Pessina G.: A front-end readout for micro bolometers having sub nano volt noise floor. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2005, pp. 418 – 422. DOI 10.1109/NSSMIC.2005.1596284

  94. Yue Fu, Hei Wong, Liou J.J.: Modeling of Low-Frequency Noise in Junction Field-Effect Transistor with Self-Aligned Planer Technology. Int. Conf of Electron Devices and Solid-State Circuits (EDSSC), 2005, pp. 39 – 42. DOI 10.1109/EDSSC.2005.1635200

  95. Dalla Betta G.-F., Boscardin M., Candelori A., Fenotti F., Pancheri L., Piemonte C., Ratti L., Zorzi N.: An improved fabrication technology for silicon detectors with integrated JFET/MOSFET electronics. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 3, 2005, pp. 1422 – 1426. DOI 10.1109/NSSMIC.2005.1596587

  96. Akarvardar K., Dufrene B., Cristoloveanu S., Chroboczek J.A., Gentil P., Blalock B.J., Mojarradi M.: Surface vs. bulk noise in SOI four-gate transistors. IEEE Int. SOI Conf. (SOI), 2005, pp. 161 – 162. DOI 10.1109/SOI.2005.1563574

  97. Fiorini C., Porro M., Frizzi T.: A 8-channels low-noise CMOS circuit for silicon detectors with on-chip front-end JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2005, pp. 403 – 405. DOI 10.1109/NSSMIC.2005.1596280

  98. Jindal R.P.: Effect of induced gate noise at zero drain bias in field-effect transistors. IEEE Trans on ED, Vol. 52, no. 3, March 2005, pp 432 – 434. DOI 10.1109/TED.2005.843891

  99. Ghione G., Bonani F., Donati S., Bertazzi F., Conte G.: Physics-based noise modelling of semiconductor devices in large signal operation including low-frequency noise conversion effects. IEDM Technical Digest. IEEE Int. Electron Devices Meeting, 2005, pp. 212 – 215. DOI 10.1109/IEDM.2005.1609309

  100. Hansen K., Reckleben C.: Noise analysis of an Si-drift detector system with time-variant shaping. IEEE Trans on Nuclear Science, Vol. 51, no. 6, 2004, pp. 3845 – 3852. DOI 10.1109/TNS.2004.839369

  101. Arnaboldi C., Boella G., Panzeri E., Pessina G.: JFET transistors for low-noise applications at low frequency. IEEE Trans on Nuclear Science, Vol. 51, no. 6, 2004, pp. 2975 – 2982. DOI 10.1109/TNS.2004.839063

  102. Fiorini C., Porro M.: DRAGO chip: a low-noise CMOS preamplifier-shaper for silicon drift detectors with on-chip JFET. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2004, pp. 47 – 49. DOI 10.1109/NSSMIC.2004.1462066

  103. Manghisoni M., Ratti L., Re V., Speziali V., Traversi G., Betta G.F.D., Boscardin M., Batignani G., Giorgi M., Bosisio L.: JFET front-end circuits integrated in a detector-grade silicon substrate. IEEE Trans on Nuclear Science, Vol. 50, no. 4, 2003, pp. 942 – 947. DOI 10.1109/TNS.2003.815177

  104. Betta G.F.D., Manghisoni M., Ratti L., Re V., Speziali V., Traversi G.: Effects of g-rays on JFET devices and circuits fabricated in a detector-compatible process. IEEE Trans on Nuclear Science, Vol. 50, no. 6, 2003, pp. 2474 – 2480.
    DOI 10.1109/TNS.2003.820631

  105. Riehl P.S., Scott K.L., Muller R.S., Howe R.T., Yasaitis J.A.: Electrostatic charge and field sensors based on micromechanical resonators. Journal of Microelectromechanical Systems, Vol. 12, no. 5, 2003, pp. 577 – 589. DOI 10.1109/JMEMS.2003.818066

  106. Baker M.W., Sarpeshkar R.: A low-power high-PSRR current-mode microphone preamplifier. IEEE Journal of SSC, Vol. 38, no. 10, 2003, pp. 1671 – 1678. DOI 10.1109/JSSC.2003.817255

  107. Arnaboldi C., Boella G., Panzeri E., Pessina G.: JFET transistors for low noise applications at low frequency. IEEE Nuclear Science Symp. Conf. Record, Vol. 2, 2003, pp. 1210 – 1214. DOI 10.1109/NSSMIC.2003.1351910

  108. Fiorini C., Longoni A., Perotti F., Labanti C., Rossi E., Lechner P., Soltau H., Struder L.: A monolithic array of silicon, drift detectors for high-resolution gamma-ray imaging. IEEE Trans on Nuclear Science, Vol. 49, no. 3, 2002, pp. 995 – 1000. DOI 10.1109/TNS.2002.1039603

  109. Manghisoni M., Ratti L., Re V., Speziali V., Graversi G., Betta G.F.D., Boscardin M., Batignani G., Giorgi M., Bosisio L.: JFET front-end circuits integrated in a detector-grade silicon substrate. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2002, pp. 116 – 120. DOI 10.1109/NSSMIC.2002.1239280

  110. Hofler T.J., Polydorou Lt.S.: A compact and inexpensive hydrophone with an internal ultra-low-noise preamp. OCEANS '02 MTS/IEEE, Vol. 4, 2002, pp. 2310 – 2314. DOI 10.1109/OCEANS.2002.1191989

  111. Vandamme L. K. J., Feyaerts R., Trefan Gy., Detcheverry C.: 1/f noise in pentacene and poly-thienylene vinylene thin film transistors. Journal of Applied Physics, Vol. 91, no. 2, 2002, pp. 719 – 723. DOI 10.1063/1.1423389

  112. Grassi V., Colombo C.F., Camin D.V.: Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs. IEEE Trans on ED, Vol. 48, no. 12, 2001, pp. 2899 – 2905. DOI 10.1109/16.974725

  113. Pichler B.J., Pimpl W., Buttler W., Kotoulas L., Boning G., Rafecas M., Lorenz E., Ziegler S.I.: Integrated low-noise low-power fast charge-sensitive preamplifier for avalanche photodiodes in JFET-CMOS technology. IEEE Trans on Nuclear Science, Vol. 48, no. 6, 2001, pp. 2370 – 2374. DOI 10.1109/23.983270

  114. Oh E. S., Sharp E. H., Fixsen D. J., Cheng E. S., Inman C. A., Silver C.: A low noise cryogenic preamplifier for the cosmic microwave background radiation anisotropy experiment. Review of Scientific Instruments, Vol. 72, no. 6, 2001, pp. 2735 – 2737. DOI 10.1063/1.1372167

  115. Fujihara A., Miyamoto H., Yamanoguchi K., Mizuki E., Samoto N., Tanaka S.: V-band MMIC LNA using superlattice-inserted InP heterojunction FETs. IEEE Int. Conf. On Indium Phosphide and Related Materials (ICIPRM), 2001, pp. 622 – 625. DOI 10.1109/ICIPRM.2001.929233

  116. Peacock S.C., Stauffer M.A., Van Slyke A.M., Ferre-Pikal E.S.: Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers. Proc. of IEEE Int. Frequency Control Symp. (FREQ), 2001, pp. 200 – 204. DOI 10.1109/FREQ.2001.956186

  117. Fazzi A., Betta G.D., Pignatel G.U., Boscardin M., Gregori P., Zorzi N.: PIN diode and integrated JFET on high resistivity silicon: a new test structure. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2001, pp. 219 – 222. DOI 10.1109/NSSMIC.2001.1008445

  118. Fiorini C., Longoni A., Perotti F., Labanti C., Rossi E., Lechner P., Soltau H., Struder, L.: A monolithic array of silicon drift detectors for high-resolution gamma-ray imaging. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 2001, pp. 25 – 28. DOI 10.1109/NSSMIC.2001.1008402

  119. Danneville F., Tamen B., Cappy A., Juraver J.B., Llopis O., Graffeuil J.: Low frequency noise conversion in FETs under nonlinear operation. Proc. of the 9th European Gallium Arsenide and Other Semiconductor Application Symp., GAAS 2001, London, UK, September 24-25, 2001, pp 247 – 250. http://amsacta.cib.unibo.it/32/1/G_10_1.pdf

  120. Mercha A., L. K. J. Vandamme, L. Pichon, R. Carin, O. Bonnaud: Current crowding and 1/f noise in polycrystalline silicon thin film transistors. J. Appl. Phys., Vol. 90, 2001, pp. 4019 – 4026. DOI 10.1063/1.1404418

  121. Deen J., Marinov O., Yu J., Holdcroft S., Woods W.: Low-Frequency Noise in Polymer Transistors. IEEE Trans on ED, vol 48, no 8, Aug. 2001, pp 1688 – 1694. DOI 10.1109/16.936690

  122. Llopis O., Juraver J.B., Cibiel G., Graffeuil J.: Low level and reflection phase noise measurements on a FET. Electronics Lett., Vol. 37, no 2, 2001, pp 127 – 129. DOI 10.1049/el:20010081

  123. Sonsky J., Koornneef R.N., Nanver L.K., Lubking G.W., Huizenga J., Hollander R.W., van Eijk C.W.E.: Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detectors. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 2, 2000, pp. 9/204 – 9/208. DOI 10.1109/NSSMIC.2000.949901

  124. Glass E.C., Jenn-Hwa Huang, Staudinger J., Shields M., Martinez M.J., Hartin O.L., Valentine W., Lan E.: Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits. IEEE Journal of SSC, Vol. 35, no. 9, 2000, pp. 1276 – 1284. DOI 10.1109/4.868036

  125. Das N.C., Monroy C., Jhabvala M., Shu P.: Evaluation of Germanium JFET for low temperature operation. Proc. of the European Solid-State Device Research Conf (ESSDERC), 2000, pp. 436 – 439. DOI 10.1109/ESSDERC.2000.194808

  126. Levinzon F. A.: Noise of the JFET Amplifier. IEEE Trans. on CAS I, Vol. 47, no.7, July 2000, pp 981 – 985. DOI 10.1109/81.855453

  127. Pala N., Lu J.-Q., Shur M.S.: Low frequency noise in GaAs heterodimensional junction field effect transistors. Electronics Lett., Vol. 36, no 7, 30 Mar. 2000, pp 675 – 677. DOI 10.1049/el:20000498

  128. Danneville F., Tamen B., Dambrine G., Cappy A.: Temperature noise model for FET mixers. Second Int. Conf. on Unsolved Problems of Noise and Fluctuations, UPoN'99, Adelaide, SA, Australia, July 12-15 1999, AIP Conf. Proc., Vol 511, 2000, pp 541 – 546. DOI 10.1063/1.60009

  129. Vandamme E. P., L. K. J. Vandamme: Current crowding and its effect on l/f noise and third harmonic distortion—A case-study for quality assessment of resistors. Microelectron. Reliab., Vol. 40, 2000, pp. 1847 – 1853. doi:10.1016/S0026-2714(00)00091-3

  130. Moradi G., Abdipour A., Ghorbani A.: An analytical method for noise analysis of a dual gate FET mixer. 2nd Int. Conf on Microwave and Millimeter Wave Technology, (ICMMT 2000), 2000, pp. 92 – 95. DOI 10.1109/ICMMT.2000.895628

  131. Weiss L., Mathis W.: A thermodynamic noise model for nonlinear resistors. IEEE ED Lett., Vol. 20, no. 8, 1999, pp. 402 – 404. DOI 10.1109/55.778157

  132. Weiss L., Mathis W.: Noise equivalent circuit for nonlinear resistors. IEEE Int. Symp on Circuits and Systems (ISCAS), Vol. 5, 1999, pp. 314 – 317. DOI 10.1109/ISCAS.1999.777572

  133. Manfredi P.F., Ratti L., Re V., Speziali V.: Noise degradation induced by g-rays on P- and N-channel junction field-effect transistors. IEEE Trans on Nuclear Science, Vol. 46, no. 5, 1999, pp. 1294 – 1299. DOI 10.1109/23.795806

  134. Manfredi P.F., Ratti L., Re V., Speziali V.: Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes. European Conf. on Radiation and its Effects on Components and Systems (RADECS), 1999, pp. 285 – 288. DOI 10.1109/RADECS.1999.858596

  135. Alessandrello A., Brofferio C., Cremonesi O., Giuliani A., Monfardini A., Nucciotti A., Pavan M., Pessina G., Previtali E.: A front-end for an array of μ-bolometers for the study of the neutrino mass. IEEE Nuclear Science Symp. Conf. Record (NSS), Vol. 1, 1999, pp. 390 – 395. DOI 10.1109/NSSMIC.1999.842515

  136. Heymann P., Rudolph M., Prinzler H., Doerner R., Klapproth L., Bock G.: Experimental Evaluation of Microwave Field-Effect-Transistor Noise Models. IEEE Trans. on MTT, Vol. 47, no. 2, Febr. 1999, pp 156 – 163. DOI 10.1109/22.744290

  137. Mathew S.J., Guofu Niu, Dubbelday W.B., Cressler J.D., Ott J.A., Chu J.O., Mooney P.M., Kavanagh K.L., Meyerson B.S., Lagnado I.: Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire. IEEE ED Letters, Vol. 20, no. 4, 1999, pp. 173 – 175. DOI 10.1109/55.753757

  138. Franca-Neto L. M., Harris J. S.: Excess Noise in Sub-micron Silicon FET: Characterization, Prediction and Control. Proc of European ESSDERC'99, ISBN: 2-86332-245-1, Vol. 1, 1999, pp 252 – 255. DOI 10.1109/ESSDERC.1999.195069

  139. Svelto F.: Very Accurate High-Frequency Noise Spectral Analysis of P-Channel FET's. IEEE Trans. on Instr. Meas., Vol. 47, no. 2, April 1998, pp 417 – 422. DOI 10.1109/19.744184

  140. Alessandrello A., Brofferio C., Bucci C., Camin D.V., Cremonesi O., Giuliani A., Nucciotti A., Pavan M., Pessina G., Previtali E., Sablich G.: A low DC drift read-out system for a large mass bolometric detector. IEEE Trans on Nuclear Science, Vol. 44, no. 3, 1997, pp. 416 – 423. DOI 10.1109/23.603683

  141. Struder L., Brauninger H., Briel U., Hartmann R., Hartner G., Hauff D., Krause N., Maier B., Meidinger N., Pfeffermann E., Popp M., Reppin C., Richter R., Stotter D., Trumper J., Weber U., Holl P., Kemmer J., Soltau H., Viehl A., Zanthier C.V: A 36 cm2 large monolythic pn-charge coupled device x-ray detector for the European XMM satellite mission. Review of Scientific Instruments, Vol. 68, no. 11, 1997, pp. 4271 – 4274. DOI 10.1063/1.1148341

  142. Godoy A., Jimenez-Tejada J. A., Palma A., Cartujo P.: Influence of the doping profile and deep level trap characteristics on generation-recombination noise. Journal of Applied Physics, Vol. 82, no. 7, 1997, pp. 3351 – 3357. DOI 10.1063/1.365647

  143. Winson P.B., Lardizabal S.M., Dunleavy L.: A table-based bias and temperature-dependent small-signal and noise equivalent circuit model. IEEE Trans on MTT, Vol. 45, no. 1, 1997, pp. 46 – 51. DOI 10.1109/22.552031

  144. Caddemi A., Di Prima F., Sannino M.: Dependence of the noise resistance of microwave FET's from the device characteristics. Int. Semiconductor Conference (CAS), Vol. 2, 1997, pp. 377 – 380. DOI 10.1109/SMICND.1997.651199

  145. S. J. Mathew, G. F. Niu, W. B. Dubbelday, J. D. Cressler, J. A. Ott, J. O. Chu, P. M. Mooney, K. L. Kavanagh, B. S. Meyerson, I. Lagnado: Hole confinement and its impact on low-frequency noise in SiGe pFET's on sapphire. IEDM'97 Tech. Dig., 1997, pp. 815 – 818. DOI 10.1109/IEDM.1997.650506

  146. Yoshida J., Akahori Y., Ikeda M., Uchida N., Kozen A.: Sensitivity limits of long-wavelength monolithically integrated p-i-n JFET photoreceivers. Journal of Lightwave Technology, Vol. 14, no. 5, 1996, pp. 770 – 779. DOI 10.1109/50.495157

  147. Liou J.J., Yue Y.: An improved model for four-terminal junction field-effect transistors. IEEE Trans on ED, Vol. 43, no. 8, 1996, pp. 1309 – 1311. DOI 10.1109/16.506786

  148. Hiemstra D. M.: Dose rate and total dose noise performance of a commercial off the shelf dielectrically isolated JFET operational amplifier during irradiation. IEEE Radiation Effects Data Workshop (REDW), 1996, pp. 1 – 5. DOI 10.1109/REDW.1996.574181

  149. Verdier J., Llopis O., Plana R., Graffeuil J.: Analysis of noise up-conversion in microwave field-effect transistor oscillators. IEEE Trans on MTT, Vol. 44, no. 8, 1996, pp. 1478 – 1483. DOI 10.1109/22.536031

  150. Godoy A., Palma A., Jimenez‐Tejada J. A., Carceller J. E.: Influence of the position of deep levels on generation‐recombination noise. Applied Physics Letters, Vol. 67, no. 24, 1995, pp. 3581 – 3583. DOI 10.1063/1.115324

  151. Citterio M., Rescia S., Radeka V.: Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices. IEEE Trans on Nuclear Science, Vol. 42, no. 6, 1995, pp. 2266 – 2270. DOI 10.1109/23.489425

  152. Cesura G., Re V.: Effects of g-rays and neutrons on the noise behaviour of monolithic JFET circuits. IEEE Trans on Nuclear Science, Vol. 41, no. 3, 1994, pp. 577 – 582. DOI 10.1109/23.299802

  153. Jung T.S., Guckel H., Seefeldt J., Ott G., Ahn Y. C.: A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors. IEEE Trans on Nuclear Science, Vol. 41, no. 4, 1994, pp. 1240 – 1245. DOI 10.1109/23.322892

  154. Kandiah K.: Random telegraph signal currents and low-frequency noise in junction field effect transistors. IEEE Trans on ED, Vol. 41, no. 11, 1994, pp. 2006 – 2015. DOI 10.1109/16.333818

  155. Bruno A., Giraudet L., Legros E., Ghirardi F., Menigaux L., Scavennec A., Carenco A.: 3dB coupler-balanced pin pair JFET circuit integrated on InP for coherent detection. Electronics Lett., Vol. 29, no. 22, 1993, pp. 1986 – 1987. DOI 10.1049/el:19931322

  156. Scherrer D., Kruse J., Laskar J., Feng M., Wada M., Takano C., Kasahara J.: Low-power performance of 0.5-mm JFET for low-cost MMIC's in personal communications. IEEE ED Lett., Vol. 14, no. 9, 1993, pp. 428 – 430. DOI 10.1109/55.244717

  157. T. Ohgihara, S. Kusunoki, M. Wada, Y. Murakami: GaAs JFET front-end MMICs for L-band personal communications. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. (MCS), 1993, pp. 9 – 12. DOI 10.1109/MCS.1993.247488

  158. Wurtz L.T., Wheless W.P., Jr.: Design of a high-performance, low-noise charge preamplifier. IEEE Trans on CAS I: Fundamental Theory and Applications, Vol. 40, no. 8, 1993, pp. 541 – 545. DOI 10.1109/81.242329

  159. Radeka V., Rescia S., Rehn L.A., Manfredi P.F., Speziali V.: Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders. IEEE Trans on Nuclear Science, Vol. 40, no. 5, 1993, pp. 1321 – 1324. DOI 10.1109/23.234543

  160. Close J.P., Santos F.: A JFET input single supply operational amplifier with rail-to-rail output. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1993, pp. 149 – 152. DOI 10.1109/BIPOL.1993.617487

  161. Merkel B.: Evaluation of fast neutron irradiation effects at liquid argon temperature. European Conf. on Radiation and its Effects on Components and Systems (RADECS), 1993, pp. 318 – 319. DOI 10.1109/RADECS.1993.316530

  162. Wurtz L.T., Wheless W.P., Jr.: Design of a low-noise, radiation-hardened charge preamplifier. Proc. of IEEE Southeastcon (SECON), 1993, pp. 6 DOI 10.1109/SECON.1993.465735

  163. Buttler W., Cesura G., Manfredi P., Re V., Speziali V., Vogt H.: A bulk-JFET and CMOS/SIMOX technology for low noise, high speed charge-sensitive amplifier. IEEE Int. SOI Conf. (SOI), 1993, pp. 186 – 187. DOI 10.1109/SOI.1993.344544

  164. Hughes B.: Designing FET's for broad noise circles. IEEE Trans on MTT, Vol. 41, no. 2, 1993, pp. 190 – 198. DOI 10.1109/22.216456

  165. Tikkanen T., Jalas P., Laakso M., Grahn K., Leinonen K.: Modelling of the depleted p-JFET radiation detector. IEEE Trans on Nuclear Science, Vol. 39, no. 5, 1992, pp. 1519 – 1522. DOI 10.1109/23.173236

  166. Blaser M., Melchior H.: High-performance monolithically integrated In/sub 0.53/Ga/sub 0.47/As/InP p-i-n /JFET optical receiver front-end with adaptive feedback control. IEEE Photonics Technology Lett., Vol. 4, no. 11, 1992, pp. 1244 – 1247. DOI 10.1109/68.166956

  167. Delevoye E., Chovet A.: White noise study of JFET's on a new mixed rad-hard technology. Proc. of the European Solid-State Device Research Conf (ESSDERC), 1992, pp. 759 – 762. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5435402&isnumber=5435105

  168. Radeka V., Rescia S., Manfredi P.F., Speziali V., Svelto F.: Low noise, high radiation hardness front-end circuits based upon an upgraded JFET monolithic process. IEEE Nuclear Science Symp. and Medical Imaging Conf (NSS/MIC), Vol. 1, 1992, pp. 421 – 423. DOI 10.1109/NSSMIC.1992.301279

  169. Wilson M.R., Chasson D.E., Krongard B.S., Rosenberry R.W., Shah N.A., Welch B.M.: Process optimization of high performance ion implanted GaAs JFETs. IEEE Gallium Arsenide Integrated Circuit Symp. Technical Digest (GaAs IC), 1992, pp. 169 – 172. DOI 10.1109/GAAS.1992.247198

  170. Citterio M., Rescia S., Radeka V.: A study of low noise JFETs exposed to large doses of gamma-rays and neutrons. IEEE Nuclear Science Symp. and Medical Imaging Conf (NSS/MIC), Vol. 2, 1992, pp. 794 – 796. DOI 10.1109/NSSMIC.1992.301428

  171. Lund J.C., Olschner F.: Junction field effect transistors as radiation detectors. IEEE Nuclear Science Symp. and Medical Imaging Conf (NSS/MIC), Vol. 1, 1992, pp. 47 – 49. DOI 10.1109/NSSMIC.1992.301183

  172. Hughes B.: A Temperature Noise Model for Extrinsic FETs. IEEE Trans on MTT, Vol. 40, no; 9, Sept. 1992, pp 1821 – 1832. DOI 10.1109/22.156610

  173. Buttler W., Vogt H., Lutz G., Manfredi P.F., Speziali V.: JFET-PMOS technology, in the design of monolithic preamplifier systems for multielectrode detectors. IEEE Trans on Nuclear Science, Vol. 38, no. 2, pp. 69-76, 1991 DOI 10.1109/23.289265

  174. Kruppa W., Boos J.B., Carruthers T.F.: Low-frequency gain dispersion, optical response, and 1/f noise in ion-implanted InP JFETs. IEEE Int. Conf. On Indium Phosphide and Related Materials (ICIPRM), 1991, pp. 300 – 303. DOI 10.1109/ICIPRM.1991.147358

  175. Rohde U.: Improved Noise Modeling of GaAs FETs. Part 1: Using an Enhanced Equivalent Circuit Technique. Microwave Journal, Vol. 34, no. 11, Nov. 1991, pp 87 – 102. http://adsabs.harvard.edu/abs/1991MiJo...34...87R

  176. Nayak D., J. C. S. Woo, J. S. Park, K. L. Wang, K. P. MacWilliams: Enhancement-mode quantum-well GeSi PMOS. IEEE Electron Device Lett., Vol. 12, no 4, 1991, pp. 154 – 156. DOI 10.1109/55.75748

  177. Rohde U.: Improved Noise Modeling of GaAs FETs. Part 2: Using a Noise De-Embedding Technique. Microwave Journal, Vol. 34, no. 12, Dec. 1991, pp 87 – 95.

  178. Buttler W., Hosticka B.J., Lutz G., Manfredi P.F.: A JFET-CMOS radiation-tolerant charge-sensitive preamplifier. IEEE Journal of SSC, Vol. 25, no. 4, 1990, pp. 1022 – 1024. DOI 10.1109/4.58299

  179. Escotte L., Mollier J. C.: Semidistributed Model of Millimeter-Wave FET for S-Parameter and Noise Figure Predictions. IEEE Trans. on MTT, Vol. 38, no. 6, June 1990, pp 748 – 753. DOI 10.1109/22.130969

  180. Froelich R. K.: An Improved Model for Noise Characterization of Microwave GaAs FET's. IEEE Trans. on MTT, Vol. 38 no. 6, June 1990, pp 703 – 706. DOI 10.1109/22.130963

  181. Lo D.C.W., Forrest S.R.: Performance of In0.53Ga0.47As and InP junction field-effect transistors for optoelectronic integrated circuits. II. Optical receiver analysis. Journal of Lightwave Technology, Vol. 7, no. 6, 1989, pp. 966 – 971. DOI 10.1109/50.32365

  182. Radeka V., Rehak P., Rescia S., Gatti E., Longoni A., Sampietro M., Bertuccio G., Holl P., Struder L., Kemmer J.: JFET for Completely Depleted High Resistivity Silicon. Proc. of the European Solid-State Device Research Conf (ESSDERC), 1988, pp. C4-363 – c4-366. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5436927&isnumber=5436685

  183. Escotte L., Mollier J.C., Lecreff M.: Noise and small-signal distributed model of millimeter-wave FETs. 1988 IEEE MTT-S Int. Microwave Symp. Digest, Vol. 2, pp. 919 – 922., 1988 DOI 10.1109/MWSYM.1988.22181

  184. Peransin J.M., Rigaud D., Alabedra R.: Avalanche noise associated with gate current of Si JFET. Electronics Lett., Vol. 23, no. 18, 1987, pp. 970 – 971. DOI 110.1049/el:19870682

  185. Podor B.: On the temperature dependence of the 1/f noise Hooge parameter αHin n-channel Silicon JFET's. IEEE ED Lett., Vol. 7, no. 11, 1986, pp. 610 – 611. DOI 10.1109/EDL.1986.26491

  186. Stephen J. H.: Low Noise Junction Field Effect Transistors Exposed to Intense Ionizing Radiation. IEEE Trans on Nuclear Science, Vol. 33, no. 6, 1986, pp. 1465 – 1470. DOI 10.1109/TNS.1986.4334624

  187. Klein S., Innes W., Price J. C.: Audiofrequency measurement of JFET noise versus temperature in a high‐impedance preamplifier. Review of Scientific Instruments, Vol. 56, no. 10, 1985, pp. 1941 – 1945. DOI 10.1063/1.1138531

  188. Pawlikiewicz A., van der Ziel A.: Temperature dependence of the Hooge parameter in n-channel Silicon JFET's. IEEE ED Lett., Vol. 6, no. 10, 1985, pp. 500 – 501. DOI 10.1109/EDL.1985.26208

  189. Smith S. W.: Internal noise of low‐frequency preamplifiers. Review of Scientific Instruments, Vol. 55, no. 5, 1984, pp. 812 – 813. DOI 10.1063/1.1137833

  190. Boos J.B., Dietrich H.B., Weng T.H., Sleger K.J., Binari S.C., Henry R.L.: Fully ion implanted InP junction FET's. IEEE ED Lett., Vol. 3, no. 9, 1982, pp. 256 – 258. DOI 10.1109/EDL.1982.25559

  191. Nordholt E.H., Van Eerden B.: An integrated amplifier for an active car-radio antenna. IEEE Journal of SSC, Vol. 17, no. 3, 1982, pp. 591 – 593. DOI 10.1109/JSSC.1982.1051781

  192. Podell A. F.: A Functional GaAs FET Noise Model. IEEE Trans. on ED, Vol. ED-28, no. 5, May 1981, pp 511 – 517. DOI 10.1109/T-ED.1981.20375

  193. Carnez B., Cappy A., Fauquemberge R., Constant E., Salmer G.: Noise Modeling in Submicrometer-Gate FETs. IEEE Trans on ED, Vol. ED-28, no. 7, July 1981, pp 784 – 789. DOI 10.1109/T-ED.1981.20431

  194. Takagi K., Tazunegi K., van der Ziel A.: Noise in triode-like JFET's. IEEE Trans on ED, Vol. 26, no. 6, 1979, pp. 977 – 980. DOI 10.1109/T-ED.1979.19528

  195. van Vliet K.M., Rucker L.M.: Theory of carrier multiplication and noise in avalanche devices—Part I: One-carrier processes. IEEE Trans on ED, Vol. 26, no. 5, 1979, pp. 746 – 751. DOI 10.1109/T-ED.1979.19489

  196. Schräder D., Weinhausen G.: Calculation of thermal noise in j.f.e.t.s. IEE Journal on Solid-State and Electron Devices, Vol. 3, no. 5, 1979, pp. 137 – 141. DOI 10.1049/ij-ssed:19790029

  197. Netzer Y.: Low-Noise Optimization of FET Input Stage for Capacitive Current Sources. Proc. of the IEEE, Vol. 65, July 1977, pp 1068 – 1069. DOI 10.1109/PROC.1977.10618

  198. Wang A.S., Dell'Oca C.J.: A compatible bipolar and JFET process. Int. Electron Devices Meeting, Vol. 22, 1976, pp. 45 – 47. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1478693&isnumber=31758

  199. Liechti C.A.: Microwave Field-Effect Transistors – 1976. IEEE Trans. on MTT, Vol. MTT-24, no. 6, June 1976, pp 279 – 300. DOI 10.1109/TMTT.1976.1128845

  200. Hiatt C.F., van der Ziel A., van Vliet K.M.: Generation-recombination noise produced in the channel of JFET's. IEEE Trans on ED, Vol. 22, no. 8, 1975, pp. 614 – 616. DOI 10.1109/T-ED.1975.18187

  201. J.W. Haslett, E.J.M. Kendall, F.J. Scholz: Design Considerations for Improving Low-Temperature Noise Performance of Silicon JFET’s. Solid State Electronics, Vol. 18, 1975, pp. 199 – 207. DOI 10.1016/0038-1101(75)90103-3

  202. van Vliet K.M., Hiatt C.F.: Theory of generation-recombination noise in the channel of junction field-effect transistors. IEEE Trans on ED, Vol. 22, no. 8, 1975, pp. 616 – 617. DOI 10.1109/T-ED.1975.18188

  203. Wang K.K., van der Ziel A., Chenette E.R.: Neutron-induced noise in junction field-effect transistors. IEEE Trans on ED, Vol. 22, no. 8, 1975, pp. 591 – 593. DOI 10.1109/T-ED.1975.18182

  204. Chiwaki M., Tomimasu T.: The Effect of Radiation Damage on the Noise Performance of FET's. IEEE Trans on Nuclear Science, Vol. 22, no. 6, 1975, pp. 2696 – 2702. DOI 10.1109/TNS.1975.4328192

  205. McKenzie J. M., Witt L. J.: Low Noise Jfet with Integral Reset Diode. IEEE Trans on Nuclear Science, Vol. 21, no. 1, 1974, pp. 794 – 797. DOI 10.1109/TNS.1974.4327552

  206. Das M.B., Moore J.M.: Measurements and interpretation of low-frequency noise in FET's. IEEE Trans on ED, Vol. 21, no. 4, 1974, pp. 247 – 257. DOI 10.1109/T-ED.1974.17906

  207. Russell R., Culmer D.: Ion-implanted JFET-bipolar monolithic analog circuits. IEEE Int. Solid-State Circ. Conf. Digest of Technical Papers (ISSCC), Vol. XVII, 1974, pp. 140 – 141. DOI 10.1109/ISSCC.1974.1155311

  208. Lecoy D., Rigaud D.,Sodini D.: Equivalent Noise Generators in JG FET. Solid-State Electronics, Vol. 17, 1974, pp 11 – 16. DOI 10.1016/0038-1101(74)90107-5

  209. Statz H., Haus H., Pucel R.: Noise Characteristics of Gallium Arsenide Field Effect Transistors. IEEE Trans. on ED, Vol. ED-21, no. 9, Sept. 1974, pp 549 – 562. DOI 10.1109/T-ED.1974.17966

  210. Haslett J.W., Kendall E.J.M.: Effects of field-dependent carrier mobility on low-frequency noise in silicon JFET's. Proc. of the IEEE, Vol. 61, no. 7, 1973, pp. 1050 – 1051. DOI 10.1109/PROC.1973.9203

  211. Elad E.: Drain Feedback - A Novel Feedback Technique for Low-Noise Cryogenic Preamplifiers. IEEE Trans on Nuclear Science, Vol. 19, no. 1, 1972, pp. 403 – 411. DOI 10.1109/TNS.1972.4326541

  212. Haslett J.W., Kendall E.J.M.: Temperature dependence of low-frequency excess noise in junction-gate FET's. IEEE Trans on ED, Vol. 19, no. 8, 1972, pp. 943 – 950. DOI 10.1109/T-ED.1972.17523

  213. Das M.B.: FET noise sources and their effects on amplifier performance at low frequencies. IEEE Trans on ED, Vol. 19, no. 3, 1972, pp. 338 – 348. DOI 10.1109/T-ED.1972.17423

  214. Baechtold W.: Noise Behaviour of GaAs Field-Effect Transistors with Short Gate Length. IEEE Trans. on ED, Vol. ED-19, no. 5, May 1972, pp 674 – 680. DOI 10.1109/T-ED.1972.17473

  215. Baechtold W.: Noise Behavior of Schottky Barrier Gate Field-Effect Transistors at Microwave Frequencies. IEEE Trans. on ED, Vol. ED-18, Feb. 1971, pp 97 – 104. DOI 10.1109/T-ED.1971.17156

  216. Kern H. E., McKenzie J. M.: Noise Studies of Ceramic Encapsulated Junction Field Effect Transistors (JFETs). IEEE Trans on Nuclear Science, Vol. 17, no. 3, 1970, pp. 425 – 432. DOI 10.1109/TNS.1970.4325720

  217. Kern H. E., McKenzie J. M.: Methods of Reducing Noise of Junction Field Effect Transistor (JFET) Amplifiers. IEEE Trans on Nuclear Science, Vol. 17, no. 1, 1970, pp. 260 – 268. DOI 10.1109/TNS.1970.4325587

  218. Kern H. E., McKenzie J. M.: Noise from Neutron Induced Defects in Junction Field Effect Transistors. IEEE Trans on Nuclear Science, Vol. 17, no. 6, 1970, pp. 256 – 261. DOI 10.1109/TNS.1970.4325802

  219. Klaassen F.M.: On the influence of hot carrier effects on the thermal noise of field-effect transistors. IEEE Trans on ED, Vol. 17, no. 10, 1970, pp. 858 – 862. DOI 10.1109/T-ED.1970.17087

  220. Kasser R.: A new noise equivalent circuit for the junction FET with uncorrelated noise sources. Proc of the IEEE, Vol. 58, no. 7, 1970, pp. 1171 – 1172. DOI 10.1109/PROC.1970.7887

  221. Haslett J.W., F.N. Trofimenkoff: Generation Noise in Junction Field-Effect Transistors at Pinch-Off. Solid State Electronics, Vol. 12, no. 9, 1969, pp. 747 – 750. DOI 10.1016/0038-1101(69)90072-0

  222. Klaassen F.M., Prins J.: Noise of field-effect transistors at very high frequencies. IEEE Trans on ED, Vol. 16, no. 11, 1969, pp. 952 – 957. DOI 10.1109/T-ED.1969.16886

  223. Haslett J.W., Trofimenkoff F.N.: Thermal noise in field-effect devices. Proc of the Institution of Electrical Engineers, Vol. 116, no. 11, 1969, pp. 1863 – 1868. DOI 10.1049/piee.1969.0343

  224. Bruncke W. C., Van der Ziel A.: Thermal Noise in Junction-Gate Field Effect Transistors. IEEE Trans. on ED, Vol. ED-13, no. 3, March 1966, pp 323 – 329. DOI 10.1109/T-ED.1966.15688

  225. Trofimenkoff F.N.: Thermal noise in field-effect transistors. Proc of the IEEE, Vol. 53, no. 9, 1965, pp. 1236 – 1237. DOI 10.1109/PROC.1965.4183

  226. Sah C.T.: Theory of low-frequency generation noise in junction-gate field-effect transistors. Proc of the IEEE, Vol. 52, no. 7, 1964, pp. 795 – 814. DOI 10.1109/PROC.1964.3123

  227. Van der Ziel A.: Gate Noise in Field-Effect Transistors at Moderately High Frequencies. Proc. of IEEE, Vol. 57, March 1963, pp 461 – 467. DOI 10.1109/PROC.1963.1849

  228. Van der Ziel A.: Thermal Noise in Field-Effect Transistors. Proc. of the I.R.E., Vol. 50, no. 8, Aug. 1962, pp 1808 – 1812. DOI 10.1109/JRPROC.1962.288221

 

Links to JFET

http://www-inst.eecs.berkeley.edu/~ee217/sp03/projectsSP99/Dist_Amp_b+r.pdf

http://khup.com/keyword/page-2/fet-theory.html


Copyright 2010 © UNESCO - All Rights Reserved.