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NOISE in HIGH ELECTRON MOBILITY TRANSISTOR

Do not expect to arrive at certainty in every subject which you pursue”

 (Isaac Watts)

          Note: HEMT is equally called HFET (Heterostructure FET)  or MODFET (Modulation-doped FET)

  1. Colangeli S., Bentini A., Ciccognani W., Limiti E.: Polynomial noise modeling of silicon-based GaN HEMTs. Int. J. of Numerical Modelling - Electronic Networks Devices & Fields, Vol. 27, no. 5-6, Special no. SI, 2014, pp. 812821. DOI 10.1002/jnm.1907

  2. Arulkumaran S., Ranjan K., Ng G.I., et al.: High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate. IEEE ED Lett., Vol. 35, no. 10, 2014, pp. 992994. DOI 10.1109/LED.2014.2343455

  3. Sakalas P., Simukovic A., Piotrowicz S., et al.: Compact modelling of InAlN/GaN HEMT for low noise applications. Semiconductor Science and Technology, Vol. 29, no. 9, 2014, Article # 095014. DOI 10.1088/0268-1242/29/9/095014

  4. Liu Yu-An, Zhuang Yi-Qi, Ma Xiao-Hua, et al.: A unified drain current 1/f noise model for GaN-based high electron mobility transistors. Chinese Physics B, Vol. 23, no. 2, 2014, Article # 020701. DOI 10.1088/1674-1056/23/2/020701

  5. Caddemi A., Crupi G., Fazio E., Patane S., Salvo G.: Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination. IEEE Microwave & Wireless Comp. Lett., Vol. 24, no. 2, 2014, pp. 102104. DOI 10.1109/LMWC.2013.2290220

  6. Chiu H.-C., Wang H.-C., Wu C.-H., Huang F.-H., Kao H.-L., Chien F.-T.: An investigation of device reliability for a micro-machined AlGaN/GaN/Si high electron mobility transistor using low frequency noise measurement. Microelectronic Engineering, Vol. 114, 2014, pp. 117120. DOI 10.1016/j.mee.2013.10.005

  7. Kumar Ramnish, Arya Sandeep K., Ahlawat Anil: Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET. Advances in Materials Science & Engineering, Vol. 2014, 2014, Article # 197937 (12 pages). http://dx.doi.org/10.1155/2014/197937

  8. Gardes C., Bagumako S., Desplanque L., et al.: 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications. Scientific World Journal, Vol. 2014, 2014, Article # 136340 (6 pages). http://dx.doi.org/10.1155/2014/136340

  9. Weinreb S., Schleeh J.: Multiplicative and Additive Low-Frequency Noise in Microwave Transistors. IEEE Trans on MTT, Vol. 62, no. 1, 2014, pp. 8391. DOI 10.1109/TMTT.2013.2293123

  10. Dong Q., Liang Y.X., Cavanna A., Gennser U., Couraud L., Ulysse C., Jin Y.: Ultra-low Noise HEMTs for High-Impedance and Low-Frequency Preamplifiers: Realization and Characterization from 4.2K to 77 K. Int. Workshop on Low Temperature Electronics (WOLTE), pp. 21 24, 2014. DOI 10.1109/WOLTE.2014.6881016

  11. Lisen Zhang, Zhihong Feng, Dong Xing, Shixiong Liang, Junlong Wang, Guodong Gu, Yuangang Wang, Peng Xu: 70 nm gate-length THz InP-based In0.7Ga0.3As/In0.52Al0.48As HEMT with fmax of 540 GHz. XXXIst URSI General Assembly and Scientific Symp., 2014, pp.1 – 4. DOI 10.1109/URSIGASS.2014.6929455

  12. Rodilla H., Schleeh J., Nilsson P.-A., Wadefalk N., Mateos J., Grahn J.: Cryogenic Performance of Low-Noise InP HEMTs: A Monte Carlo Study. IEEE Trans on ED, Vol. 60, no. 5, 2013, pp. 1625 – 1631. DOI 10.1109/TED.2013.2253469

  13. Nilsson P. A., Rodilla H., Schleeh J., et al.: Influence of gate-channel distance in low-noise InP HEMTs. 25th IEEE Int. Conf. On Indium Phosphide and Related Materials (IPRM), 2013, pp. 12. DOI 10.1109/ICIPRM.2013.6562602

  14. Schleeh J., Rodilla H., Wadefalk N., Nilsson P.-A., Grahn J.: Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs. IEEE Trans on ED, Vol. 60, no. 1, 2013, pp. 206212. DOI 10.1109/TED.2012.2227485

  15. Nsele S.D., Escotte L., Tartarin J.-G., Piotrowicz S.: Noise Characteristics of AlInN/GaN HEMTs at Microwave Frequencies. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578989

  16. Chen J., Puzyrev Y.S., Zhang C.X., et al.: Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs. IEEE Trans on Nuclear Science, Vol. 60, no. 6, Part 1, 2013, pp. 40804086. DOI 10.1109/TNS.2013.2281771

  17. Lin Ray-Ming, Chu Fu-Chuan, Das Atanu, Liao S.-Y., Su V.-C.: Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer. Japanese Journal of Applied Physics, Vol. 52, no. 11, Part 1, 2013, Article # UNSP 111002. DOI 10.7567/JJAP.52.111002

  18. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: Impact of Temperature and Indium Composition in the Channel on the Microwave Performance of Single-Gate and Double-Gate InAlAs/InGaAs HEMT. IEEE Trans on Nanotechnology, Vol. 12, no. 6, 2013, pp. 965970. DOI 10.1109/TNANO.2013.2276415

  19. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT. J. of Semiconductor Technology & Science, Vol. 13, no. 4, 2013, pp. 331341. DOI 10.5573/JSTS.2013.13.4.331

  20. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization of In0.52Al0.48As/InmGa1-mAs (0,53 <= m <= 0,8) DG-HEMT. IEEE Trans on Device and Materials Reliability, Vol. 13, no. 1, 2013, pp. 293300. DOI 10.1109/TDMR.2013.2243913

  21. Arakawa T., Nishihara Y., Maeda M., Norimoto S., Kobayashi K.: Cryogenic amplifier for shot noise measurement at 20 mK. Applied Physics Letters, Vol. 103, no. 17, 2013, Article # 172104. DOI 10.1063/1.4826681

  22. Shinohara Keisuke, Regan D.C., Tang Yan, et al.: Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications. IEEE Trans on ED, Vol. 60, no. 10, Special no. SI, 2013, pp. 29822996. DOI 10.1109/TED.2013.2268160

  23. Saunier P., Schuette M.L., Chou Tso-Min, et al.: InAlN Barrier Scaled Devices for Very High f(T) and for Low-Voltage RF Applications. IEEE Trans on ED, Vol. 60, no. 10, Special no. SI, 2013, pp. 30993104. DOI 10.1109/TED.2013.2277772

  24. Moschetti G., Lefebvre E., Fagerlind M., et al.: DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation. Solid-State Electronics, Vol. 87, 2013, pp. 8589. DOI 10.1016/j.sse.2013.06.008

  25. Radisic V., Leong K.M.K.H., Zhang Chunbo, Loi K.K., Sarkozy S.: Demonstration of a Micro-Integrated Sub-Millimeter-Wave Pixel. IEEE Trans on MTT, Vol. 61, no. 8, Part 1, 2013, pp. 29492955. DOI 10.1109/TMTT.2013.2272379

  26. Leong K.M.K.H., Mei G., Radisic V., Sarkozy S., Deal W.: THz Integrated Circuits using InP HEMT Transistors. 25th IEEE Int. Conf. On Indium Phosphide and Related Materials (IPRM), 2013, pp. 1 – 4. DOI 10.1109/ICIPRM.2012.6403302

  27. Chiu Hsien-Chin, Lin Chao-Wei, Huang Fan-Hsiu, et al.: Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. Microelectronics Reliability, Vol. 53, no. 3, 2013, pp. 405408. DOI 10.1016/j.microrel.2012.10.005

  28. Marinkovic Z., Ivkovic N., Pronic-Rancic O., et al.: Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors. Microelectronics Reliability, Vol. 53, no. 3, 2013, pp. 414419. DOI 10.1016/j.microrel.2012.09.003

  29. Li Yihu, Ling Goh Wang, Ng Geok Ing, et al.: Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon. Electronics Lett., Vol. 49, no. 2, 2013, pp. 156157. DOI 10.1049/el.2012.4285

  30. Sadeghi S., Vadizadeh M., Faez R.: Compare Noise Characteristic of DC-HEMT and HEMT. 21st Iranian Conf. on Electrical Engineering (ICEE), 2013. DOI 10.1109/IranianCEE.2013.6599546

  31. Karboyan, S., Tartarin, J. G., Labat, N., Lambert B.: Gate and Drain Low Frequency Noise of AlGaN/GaN HEMTs Featuring High and Low Gate Leakage Currents. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013. DOI 10.1109/ICNF.2013.6578954

  32. Tartarin J.G., Karboyan S., Carisetti D., Lambert B.: Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013, pp.14. DOI 10.1109/ICNF.2013.6578987

  33. Shiktorov P., Gruzinskis V., Starikov E., et al.: Monte Carlo Simulation of Low-Frequency Excess Noise in InP MOSFETs/HEMTs at Impact Ionization Conditions. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013. DOI 10.1109/ICNF.2013.6578932

  34. Rudolph M., Doerner R.: Towards a Large-Signal Noise Model for GaN HEMT Devices. 8th European Microwave Integrated Circuits Conf (EuMIC), 2013, pp. 484487. INSPEC Accession Number: 13990893.

  35. Leszczynski M., Prystawko P., Kruszewski P., et al.: Comparison of SiC and GaN Substrates Used for Epitaxy of HEMT Structures. 8th European Microwave Integrated Circuits Conf (EuMIC), 2013, pp. 526 – 529. INSPEC Accession Number: 13999554.

  36. Colangeli S., Bentini A., Ciccognani W., Limiti E., Nanni A.: GaN-Based Robust Low-Noise Amplifiers. IEEE Trans on ED, Vol. 60, no. 10, Special no. SI, 2013, pp. 32383248. DOI 10.1109/TED.2013.2265718

  37. Schleeh J., Alestig G., Halonen J., Malmros A., Nilsson B., Nilsson P. A., Starski J. P., Wadefalk N., Zirath H., Grahn J.: Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz. IEEE ED Letters, Vol. 33, no. 5, 2012, pp. 664 – 666. DOI 10.1109/LED.2012.2187422

  38. Hsien-Chin Chiu, Jia-Hsuan Wu, Chih-Wei Yang, Fan-Hsiu Huang, Hsuan-Ling Kao: Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked Al2O3/Ga2O3/Gd2O3 Gate Dielectric. IEEE ED Letters, Vol. 33, no. 7, 2012, pp. 958 – 960. DOI 10.1109/LED.2012.2194980

  39. Medjdoub F., Tagro Y., Zegaoui M., Grimbert B., Danneville F., Ducatteau D., Rolland N., Rolland P.A.: Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz. IEEE ED Letters, Vol. 33, no. 9, 2012, pp. 1258 – 1260. DOI 10.1109/LED.2012.2205215

  40. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetric Tied-Gate InAlAs/InGaAs DG-HEMT. IEEE Trans on ED, Vol. 59, no. 6, 2012, pp. 1644 – 1652. DOI 10.1109/TED.2012.2190738

  41. Takahashi T., Sato M., Nakasha Y., Hirose T., Hara N.: Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs. IEEE Trans on ED, Vol. 59, no. 8, 2012, pp. 2136 – 2141. DOI 10.1109/TED.2012.2200254

  42. Kobayashi K. W.: An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3. IEEE Journal of SSC, Vol. 47, no. 10, 2012, pp. 2316 – 2326. DOI 10.1109/JSSC.2012.2204929

  43. Mateos J., Gonzalez T.: Plasma Enhanced Terahertz Rectification and Noise in InGaAs HEMTs. IEEE Trans on Terahertz Science and Technology, Vol. 2, no. 5, 2012, pp. 562 – 569. DOI 10.1109/TTHZ.2012.2209970

  44. Kong C., Li H., Chen X., Jiang S., Zhou J., Chen C.: A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor. IEEE Trans on MTT, Vol. 60, no. 11, 2012, pp. 3413 – 3419. DOI 10.1109/TMTT.2012.2209442

  45. Chiu H.-C., Yang C.-W., Chen C.-H., Wu C.-H.: Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. IEEE Trans on ED, Vol. 59, no. 12, 2012, pp. 3334 – 3338. DOI 10.1109/TED.2012.2215872

  46. Rendek K., Satka A., Donoval D.: Measurement set-up for low-frequency noise characterization of GaN HEMT transistors. Int. Conf. Radioelektronika (RADIOELEKTRONIKA), 2012, pp. 1 – 4. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6207675&isnumber=6207636

  47. Wiatr W.: Source-pull noise characterization of GaAs pHEMTs. Int. Conf on Microwave Radar and Wireless Communications (MIKON), Vol. 2, 2012, pp. 794 – 798. DOI 10.1109/MIKON.2012.6233579

  48. Schleeh J., Wadefalk N., Nilsson P. A., Starski J. P., Alestig G., Halonen J., Nilsson B., Malmros A., Zirath H., Grahn J.: Cryogenic 0.5–13 GHz low noise amplifier with 3 K mid-band noise temperature. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259542

  49. Masuda Satoshi, Yamada Masao, Kamada Youichi, Ohki Toshihiro, Makiyama Kozo, Okamoto Naoya, Imanishi Kenji, Kikkawa Toshihide, Shigematsu Hisao: GaN single-chip transceiver frontend MMIC for X-band applications. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259470

  50. Samoska L., Varonen M., Reeves R., Cleary K., Gawande R., Kangaslahti P., Gaier T., Lai R., Sarkozy S.: W-Band cryogenic InP MMIC LNAs with noise below 30K. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6258356

  51. Gawande R., Reeves R., Cleary K., Readhead A. C., Gaier T., Kangaslahti P., Samoska L., Church S., Sieth M., Voll P., Harris A., Lai R., Sarkozy S.: W-band heterodyne receiver module with 27 K noise temperature. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259612

  52. Chehrenegar P., Abbasi M., Grahn J., Andersson K.: Highly linear 1–3 GHz GaN HEMT low-noise amplifier. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259764

  53. Reising S. C., Kangaslahti P., Brown S. T., Dawson D. E., Lee A., Albers D., Montes O., Gaier T. C., Hoppe D. J., Khayatian B.: InP HEMT low-noise amplifier-based millimeter-wave radiometers from 90 to 180 GHz with internal calibration for remote sensing of atmospheric wet-path delay. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259773

  54. Niehenke E.C.: The evolution of low noise devices and amplifiers. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6258248

  55. Ma Bob Y., Bergman J., Kim Dae Hyun, Chen P., Griffith Z., Hacker J., Urteaga M., Chun Huang, Quyet Vo, Salam N.: Commercial wideband MMIC low noise amplifier with 50nm gate-length E-mode InGaAs PHEMT. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259443

  56. Deal W. R., Chattopadhyay G.: InP HEMT integrated circuits for Submillimeter Wave radiometers in earth remote sensing. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6258434

  57. Aja B., Seelmann-Eggebert M., Leuther A., Massler H., Schlechtweg M., Gallego J. D., Lopez-Fernandez I., Diez C., Malo I., Villa E., Artal E.: 4–12 GHz and 25–34 GHz cryogenic MHEMT MMIC Low Noise Amplifiers for radio astronomy. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259592

  58. Pospieszalski M.W.: Cryogenic amplifiers for Jansky Very Large Array receivers. Int. Conf on Microwave Radar and Wireless Communications (MIKON), Vol. 2, 2012, pp. 748 – 751. DOI 10.1109/MIKON.2012.6233589

  59. Eskanadri S., Hamedani F.T.: Design and progress of a wideband 120–210 GHz low noise amplifier. Int. Conf on Microwave Radar and Wireless Communications (MIKON), Vol. 2, 2012, pp. 757 – 760. DOI 10.1109/MIKON.2012.6233630

  60. Wiatr W.: Source-pull noise characterization of GaAs pHEMTs. Int. Conf on Microwave Radar and Wireless Communications (MIKON), Vol. 2, 2012, pp. 794 – 798. DOI 10.1109/MIKON.2012.6233579

  61. Limiti E., Colangeli S., Bentini A., Nanni A.: Characterization and modeling of low-cost, high-performance GaN-Si technology. Int. Conf on Microwave Radar and Wireless Communications (MIKON), Vol. 2, 2012, pp. 599 – 604. DOI 10.1109/MIKON.2012.6233597

  62. Oupeng Li, Yuehang Xu, Yunchuan Guo, Lei Wang, Ruimin Xu, Bo Yan: 60 GHz GaAs MMIC low noise amplifier. Int. Conf on Microwave and Millimeter Wave Technology (ICMMT), Vol. 1, 2012, pp. 1 – 3. DOI 10.1109/ICMMT.2012.6229981

  63. Jeng-Han Tsai, Ji-Yang Lin, Kun-Yao Ding: Design of a 9–25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process. Int. Conf on Microwave and Millimeter Wave Technology (ICMMT), Vol. 5, 2012, pp. 1 – 4. DOI 10.1109/ICMMT.2012.6230368

  64. Guilin Lan, Yuehang Xu, Yongbo Chen, Yunchuan Guo, Ruimin Xu: High frequency noise performance of AlGaN/InGaN/GaN HEMTs with AlN interlayer. Int. Conf on Microwave and Millimeter Wave Technology (ICMMT), Vol. 5, 2012, pp. 1 – 4. DOI 10.1109/ICMMT.2012.6230421

  65. Eskanadri S., Hamedani F.T.: Extracting the parameters of an EEHEMT nonlinear model for InP HEMT operating at G-band frequency. Proc of the Int. Conf Mixed Design of Integrated Circuits and Systems (MIXDES), 2012, pp. 360 – 363. INSPEC Accession Number: 12836515

  66. Pang Lei, Chen Xiaojuan, Liu Xinyu: An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier. Int. Workshop on Microwave & Millimeter Wave Circ. and System Technology (MMWCST), 2012, pp. 1 – 3. DOI 10.1109/MMWCST.2012.6238209

  67. Hoque M.E., Heimlich M., Parker A.E., Mahon S.J.: Performance analysis of distributed HEMT model with geometry. IEEE Wireless and Microwave Technology Conf. (WAMICON), 2012, pp. 1 – 4. DOI 10.1109/WAMICON.2012.6208443

  68. Ben Ooi Zee Min, Wong Chee Ling, Hoh Cheng Wei, Leong Bi Jun: Use of the overdrive voltage in the design of an internally matched MMIC low noise amplifier. IEEE Wireless and Microwave Technology Conf. (WAMICON), 2012, pp. 1 – 10. DOI 10.1109/WAMICON.2012.6208470

  69. Boubanga-Tombet S., Tanimoto Y., Watanabe T., Suemitsu T., Yuye W., Minamide H., Ito H., Popov V., Otsuji T.: Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection. Annual Device Research Conf. (DRC), 2012, pp. 169 – 170. DOI 10.1109/DRC.2012.6256927

  70. Rendek K., Satka A., Donoval D.: Measurement set-up for low-frequency noise characterization of GaN HEMT transistors. Int. Conf. Radioelektronika (RADIOELEKTRONIKA), 2012, pp. 1 – 4. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6207675&isnumber=6207636

  71. Zech C., Diebold S., Wagner S., Schlechtweg M., Leuther A., Ambacher O., Kallfass I.: An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology. German Microwave Conference (GeMiC), 2012, pp. 1 – 4. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6185178&isnumber=6185137

  72. Watanabe Takayuki, Tombet S. B., Tanimoto Yudai, Fukushima Tetsuya, Otsuji Taiichi, Fateev D., Popov V., Coquillat D., Knap W., Meziani Y., Wang Yuye, Minamide Hiroaki, Ito Hiromasa: Ultrahigh sensitive plasmonic terahertz detection using asymmetric dual-grating gate HEMT structures. Conf. on Lasers and Electro-Optics (CLEO), 2012, pp. 1 – 2. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6326050&isnumber=6325355

  73. Kobayashi K.W.: Bias optimized IP2 & IP3 linearity and NF of a decade-bandwidth GaN MMIC feedback amplifier. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2012, pp. 479 – 482. DOI 10.1109/RFIC.2012.6242326

  74. Hsien-Chin Chiu, Bo-Yu Ke: High performance V-band GaAs power amplifier and low noise amplifier using low-loss transmission line technology. Int. High Speed Intelligent Communication Forum (HSIC), 2012, pp. 1 – 4. DOI 10.1109/HSIC.2012.6212968

  75. Kao H.L., Shih S.P., Yeh C.S., Chang L.C.: A low phase noise Ka-band voltage controlled oscillator using 0.15 Ám GaAs pHEMT technology. IEEE Int. Symp on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2012, pp. 79 – 82. DOI 10.1109/DDECS.2012.6219029

  76. Jha C.K., Gupta N.: Design of a front end low noise amplifier for wireless devices. Students Conf. on Engineering and Systems (SCES), 2012, pp. 1 – 4. DOI 10.1109/SCES.2012.6199043

  77. Meziani Y.M., Garcia-Garcia E., Velazquez-Perez J.E., Coquillat D., Dyakonova N., Knap W., Grigelionis I., Fobelets K.: Terahertz Imaging Using Strained-Si MODFETs as Sensors. Int. Silicon-Germanium Technology and Device Meeting (ISTDM), 2012, pp. 1 – 2. DOI 10.1109/ISTDM.2012.6222464

  78. Deal W., Mei X.B., Leong K.M.K.H., Radisic V., Sarkozy S., Lai R.: THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors. IEEE Trans on Terahertz Science and Technology, Vol.1, no.1, 2011, pp. 25 – 32. DOI 10.1109/TTHZ.2011.2159539

  79. Rao H., Bosman G.: Device reliability study of GaN HEMTs using both low frequency noise and microwave noise temperature spectroscopy. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 464 – 467. DOI 10.1109/ICNF.2011.5994370

  80. Marinchio H., Palermo C., Varani L., Shiktorov P., Starikov E., Gruzinskis V.: Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 180 – 183. DOI 10.1109/ICNF.2011.5994294

  81. Chih-Chan Hu, Yue-Ming Hsin, Dong-Ming Lin, Chien-Chang Huang, Cheng-Kuo Lin, Yu-Chi Wang: Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 212 – 215. DOI 10.1109/ICNF.2011.5994303

  82. Rodilla H., Vasallo B.G., Mateos J., Moschetti G., Grahn J., Gonzalez T.: Monte Carlo study of the noise performance of isolated-gate InAs HEMTs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 184 – 187. DOI 10.1109/ICNF.2011.5994295

  83. Mateos J., Iniguez-de-la-Torre I., Gonzalez T.: Noise and Terahertz rectification in semiconductor diodes and transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 16 – 21. DOI 10.1109/ICNF.2011.5994291

  84. Labat N., Malbert N., Maneux C., Curutchet A., Grandchamp B.: Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 458 – 463. DOI 10.1109/ICNF.2011.5994368

  85. Tartarin J.G.: Diagnostic tools for accurate reliability investigations of GaN devices. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 452 – 457. DOI 10.1109/ICNF.2011.5994367

  86. Manouchehri F., Valizadeh P., Kabir M.Z.: Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 220 – 222. DOI 10.1109/ICNF.2011.5994305

  87. Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Chun-Chia Chen, Chung-I Kao, Wen-Chau Liu: Performance of Metamorphic Transistors with δ-Doped Structures. The Journal of Physical Chemistry C, 2011. DOI 10.1021/jp204203e

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