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NOISE in HIGH ELECTRON MOBILITY TRANSISTOR

Do not expect to arrive at certainty in every subject which you pursue”

 (Isaac Watts)

          Note: HEMT is equally called HFET (Heterostructure FET)  or MODFET (Modulation-doped FET)

  1. Pan Wang; Rong Jiang; Jin Chen; En Xia Zhang; M.W. McCurdy; R.D. Schrimpf; D.M. Fleetwood: 1/f Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations. IEEE Trans on Nuclear Science, Vol. 64, no. 1, 2017, pp. 181 – 189. DOI 10.1109/TNS.2016.2636123

  2. Monika Bhattacharya, Jyotika Jogi, R.S. Gupta, Mridula Gupta: Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT. Superlattices and Microstructures, Available online 11 March 2017. http://doi.org/10.1016/j.spmi.2017.02.026

  3. HengShuang Zhang, PeiJun Ma, Yang Lu, BoChao Zhao, JiaXin Zheng, XiaoHua Ma, Yue Hao: Extraction method for parasitic capacitances and inductances of HEMT models. Solid-State Electronics, Vol. 129, 2017, pp. 108 – 113. http://doi.org/10.1016/j.sse.2016.12.003

  4. Shubhankar Majumdar, Dhrubes Biswas: Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model. Microelectronics Journal, Vol. 62, 2017, pp. 43 – 48. http://doi.org/10.1016/j.mejo.2017.02.007

  5. Sindhuri Vodapally, Young In Jang, In Man Kang, et al.: 1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs. IEEE ED Lett., Vol. 38, no. 2, 2017, pp. 252 – 254. DOI 10.1109/LED.2016.2645211

  6. Di Han, C.T. Morris, Woongkul Lee: A Case Study on Common Mode Electromagnetic Interference Characteristics of GaN HEMT and Si MOSFET Power Converters for EV/HEVs. IEEE Trans on Transportation Electrification, Vol. 3, no. 1, 2017, pp. 168 – 179. DOI 10.1109/TTE.2016.2622005

  7. M.R.M. Rizk; Ehab Abou-Bakr; A.A.A. Nasser; El-Sayed A. El-Badawy; Amr M. Mahros: Full characterization of gain and noise boundaries for Nfmin or unity SWRout operation. Analog Integrated Circuits and Signal Processing, Vol. 90, no. 3, 2017, pp. 605 – 613. DOI 10.1007/s10470-016-0906-y

  8. Pan Wang: Gate Voltage Dependence of Low Frequency Noise of AlGaN/GaN HEMTs. MS Thesis, Vanderbilt University, Nashville, Tennessee, 2017.

  9. Caddemi A., Cardillo E., Crupi G.: Microwave noise parameter modeling of a GaAs HEMT under optical illumination. Microwave & Optical Techn. Lett., Vol. 58, no. 1, 2016, pp. 151 – 154. DOI 10.1002/mop.29513

  10. Palanichamy Vimala, L. Vidyashree: Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT. J. of Applied Mathematics & Physics, Vol. 4, no. 10, 2016, pp. 1905 – 1915. DOI 10.4236/jamp.2016.410193

  11. Mikhaylovich S.V.; Fedorov Yu.V.: Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT. Radiophysics and Quantum Electronics, Vol. 59, no. 2, 2016, pp 153 – 160. DOI 10.1007/s11141-016-9685-7

  12. Avirup Dasgupta; Yogesh Singh Chauhan: Modeling of Induced Gate Thermal Noise in HEMTs. IEEE Microwave & Wireless Comp. Lett., Vol. 26, no. 6, 2016, pp. 428 – 430. DOI 10.1109/LMWC.2016.2562642

  13. Khachatrian A.; Roche N.J-H.; Buchner S.P.; Koehler A.D.; Greenlee J.D.: Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique. IEEE Trans on Nuclear Science, Vol. 63, no. 4, 2016, pp. 1995 – 2001. DOI 10.1109/TNS.2016.2588886

  14. Chiu Hsien-Chin; Peng Li-Yi; Wang Hou-Yu; et al.: Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement. Japanese Journal of Applied Physics, Vol. 55, no. 5, 2016, Article # 056502. DOI 10.7567/JJAP.55.056502

  15. Crupi F.; Magnone P.; Strangio S.; et al.: Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs. IEEE Trans on ED, Vol. 63, no. 5, 2016, pp. 2219 – 2222. DOI 10.1109/TED.2016.2544798

  16. Srivastava Puneet; Chung SungWon; Piedra Daniel; et al.: GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio. IEEE ED Lett., Vol. 37, no. 10, 2016, pp. 1314 – 1317. DOI 10.1109/LED.2016.2598806

  17. Huang Tongde; Axelsson Olle; Thanh Ngoc Thi Do; et al.: Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation. IEEE Trans on ED, Vol. 63, no. 10, 2016, pp. 3887 – 3892. DOI 10.1109/TED.2016.2597758

  18. Karisan Yasir; Caglayan Cosan; Trichopoulos G.C.; et al.: Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis. IEEE Trans on MTT, Vol. 64, no. 5, 2016, pp. 1419 – 1430. DOI 10.1109/TMTT.2016.2549520

  19. Chen Jin; Puzyrev Y.S.; Zhang En Xia; et al.: High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs. IEEE Trans on Device and Materials Reliability, Vol. 16, no. 3, 2016, pp. 282 – 289. DOI 10.1109/TDMR.2016.2581178

  20. Crupi G., Caddemi A., Raffo A., et al.: GaN HEMT noise modeling based on 50-Ω noise factor. Microwave and Optical Technology Letters, Vol. 57, no. 4, 2015, pp. 937 – 942. DOI 10.1002/mop.28983

  21. Caddemi A., Crupi G., Salvo G.: A link between noise parameters and light exposure in GaAs pHEMT’s. Solid-State Electronics, Vol. 105, 2015, pp. 16 – 20. http://doi.org/10.1016/j.sse.2014.11.021

  22. Axelsson O.; Thorsell M.; Andersson K.; Rorsman N.: The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs. IEEE Trans on Device and Materials Reliability, Vol. 15, no. 1, 2015, pp. 40 – 46. DOI 10.1109/TDMR.2014.2372474

  23. Nalli A.; Raffo A.; Crupi G.; D'Angelo S.; Resca D.; Scappaviva F.; Salvo G.; Caddemi A.; Vannini G.: GaN HEMT Noise Model Based on Electromagnetic Simulations. IEEE Trans on MTT, Vol. 63, no. 8, 2015, pp. 2498 – 2508. DOI 10.1109/TMTT.2015.2447542

  24. Dasgupta A.; Khandelwal S.; Chauhan Y.S.: Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation. IEEE Microwave & Wireless Comp. Lett., Vol. 25, no. 6, 2015, pp. 376 – 378. DOI 10.1109/LMWC.2015.2422472

  25. Do T.N.T.; Malmros A.; Gamarra P.; Lacam C.; Di Forte-Poisson M.-A.; Tordjman M.; Horberg M.; Aubry R.; Rorsman N.; Kuylenstierna D.: Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors. IEEE ED Lett., Vol. 36, no. 4, 2015, pp. 315 – 317. DOI 10.1109/LED.2015.2400472

  26. Ghaffari M.; Orouji A.A.: Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region. Physica E - Low-Dimensional Systems & Nanostructures, Vol. 74, 2015, pp. 303 – 309. DOI 10.1016/j.physe.2015.07.016

  27. Shen Li; Chen Bo; Sun Ling; Gao Jianjun: The effect of the gate-drain distance on high frequency and noise performance for AlGaN/GaN HEMT. Microwave & Optical Techn. Lett., Vol. 57, no. 9, 2015, pp. 2020 – 2023. DOI 10.1002/mop.29256

  28. Shen Li; Chen Bo; Sun Ling; Gao Jianjun: Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling. Journal of Computational and Theoretical Nanoscience, Vol. 12, no. 10, 2015, pp. 3547 – 3555. https://doi.org/10.1166/jctn.2015.4236

  29. Đorđević V.; Marinković Z.; Crupi G., et. al.: Wave approach for noise modeling of gallium nitride high electron‐mobility transistors. Int. J. of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 30, no. 1, 2015, Version of Record online. DOI 10.1002/jnm.2138

  30. Khachatrian A.; Roche N.J.-H.; Buchner S.P.; Koehler A.D.; Greenlee J.D.: UV Single-Photon Absorption Single-Event Transient Testing of Pristine and Irradiated AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers, 2015.

  31. Avirup Dasgupta, Sourabh Khandelval, Yogesh Singh Chauhan: Compact Modeling of Flicker Noise in HEMTs. IEEE Journal of the Electron Dev. Society, Vol. 2, no. 6, 2014, pp. 174 – 178. DOI 10.1109/JEDS.2014.2347991

  32. Murase Yasuhiro; Asano Kazunori; Takenaka Isao; et al.: T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and f(MAX). IEEE ED Lett., Vol. 35, no. 5, 2014, pp. 524 – 526. DOI 10.1109/LED.2014.2308313

  33. Schleeh J.; Rodilla H.; Wadefalk N.; Nilsson P. A., Grahn J.: Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate. Solid-State Electronics, Vol. 91, 2014, pp. 74 – 77. DOI 10.1016/j.sse.2013.10.004

  34. Moro-Melgar D.; Mateos J.; Gonzalez T.; et al.: Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor. J. of Applied Physics, Vol. 116, no. 23, 2014, Article # 234502. DOI 10.1063/1.4903971

  35. Arai Tomoyuki; Sato Masaru; Nara Naoki: Suppressing the 1/f noise and noise figure of InP-based high electron mobility transistors. Japanese Journal of Applied Physics, Vol. 53, no. 4, 2014, Article # 041201. DOI 10.7567/JJAP.53.041201

  36. Rudolph M.; Doerner R.: Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices. German Microwave Conference (GeMIC), 2014, Print ISBN 978-3-8007-3585-3.

  37. Nalli A.; Raffo A.; Vannini G., D'Angelo S.; Resca D.; Scappaviva F.; Crupi G.; Salvo G.; Caddemi A.: A scalable HEMT noise model based on FW-EM analyses. 9th European Microwave Integrated Circuit Conf (EuMIC), 2014. DOI 10.1109/EuMIC.2014.6997896

  38. Rudolph M., Escotte L., Doerner R.: GaN HEMT noise model performance under nonlinear operation. 9th European Microwave Integrated Circuit Conf (EuMIC), 2014. DOI 10.1109/EuMIC.2014.6997895

  39. Colangeli S., Bentini A., Ciccognani W., Limiti E.: Polynomial noise modeling of silicon-based GaN HEMTs. Int. J. of Numerical Modelling - Electronic Networks Devices & Fields, Vol. 27, no. 5-6, Special no. SI, 2014, pp. 812821. DOI 10.1002/jnm.1907

  40. Arulkumaran S., Ranjan K., Ng G.I., et al.: High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate. IEEE ED Lett., Vol. 35, no. 10, 2014, pp. 992994. DOI 10.1109/LED.2014.2343455

  41. Sakalas P., Simukovic A., Piotrowicz S., et al.: Compact modelling of InAlN/GaN HEMT for low noise applications. Semiconductor Science and Technology, Vol. 29, no. 9, 2014, Article # 095014. DOI 10.1088/0268-1242/29/9/095014

  42. Liu Yu-An, Zhuang Yi-Qi, Ma Xiao-Hua, et al.: A unified drain current 1/f noise model for GaN-based high electron mobility transistors. Chinese Physics B, Vol. 23, no. 2, 2014, Article # 020701. DOI 10.1088/1674-1056/23/2/020701

  43. Caddemi A., Crupi G., Fazio E., Patane S., Salvo G.: Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination. IEEE Microwave & Wireless Comp. Lett., Vol. 24, no. 2, 2014, pp. 102104. DOI 10.1109/LMWC.2013.2290220

  44. Chiu H.-C., Wang H.-C., Wu C.-H., Huang F.-H., Kao H.-L., Chien F.-T.: An investigation of device reliability for a micro-machined AlGaN/GaN/Si high electron mobility transistor using low frequency noise measurement. Microelectronic Engineering, Vol. 114, 2014, pp. 117120. DOI 10.1016/j.mee.2013.10.005

  45. Kumar Ramnish, Arya Sandeep K., Ahlawat Anil: Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET. Advances in Materials Science & Engineering, Vol. 2014, 2014, Article # 197937 (12 pages). http://dx.doi.org/10.1155/2014/197937

  46. Gardes C., Bagumako S., Desplanque L., et al.: 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications. Scientific World Journal, Vol. 2014, 2014, Article # 136340 (6 pages). http://dx.doi.org/10.1155/2014/136340

  47. Weinreb S., Schleeh J.: Multiplicative and Additive Low-Frequency Noise in Microwave Transistors. IEEE Trans on MTT, Vol. 62, no. 1, 2014, pp. 8391. DOI 10.1109/TMTT.2013.2293123

  48. Dong Q., Liang Y.X., Cavanna A., Gennser U., Couraud L., Ulysse C., Jin Y.: Ultra-low Noise HEMTs for High-Impedance and Low-Frequency Preamplifiers: Realization and Characterization from 4.2K to 77 K. Int. Workshop on Low Temperature Electronics (WOLTE), pp. 21 24, 2014. DOI 10.1109/WOLTE.2014.6881016

  49. Lisen Zhang, Zhihong Feng, Dong Xing, Shixiong Liang, Junlong Wang, Guodong Gu, Yuangang Wang, Peng Xu: 70 nm gate-length THz InP-based In0.7Ga0.3As/In0.52Al0.48As HEMT with fmax of 540 GHz. XXXIst URSI General Assembly and Scientific Symp., 2014, pp.1 – 4. DOI 10.1109/URSIGASS.2014.6929455

  50. Rodilla H., Schleeh J., Nilsson P.-A., Wadefalk N., Mateos J., Grahn J.: Cryogenic Performance of Low-Noise InP HEMTs: A Monte Carlo Study. IEEE Trans on ED, Vol. 60, no. 5, 2013, pp. 1625 – 1631. DOI 10.1109/TED.2013.2253469

  51. Nilsson P. A., Rodilla H., Schleeh J., et al.: Influence of gate-channel distance in low-noise InP HEMTs. 25th IEEE Int. Conf. On Indium Phosphide and Related Materials (IPRM), 2013, pp. 12. DOI 10.1109/ICIPRM.2013.6562602

  52. Schleeh J., Rodilla H., Wadefalk N., Nilsson P.-A., Grahn J.: Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs. IEEE Trans on ED, Vol. 60, no. 1, 2013, pp. 206212. DOI 10.1109/TED.2012.2227485

  53. Nsele S.D., Escotte L., Tartarin J.-G., Piotrowicz S.: Noise Characteristics of AlInN/GaN HEMTs at Microwave Frequencies. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578989

  54. Chen J., Puzyrev Y.S., Zhang C.X., et al.: Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs. IEEE Trans on Nuclear Science, Vol. 60, no. 6, Part 1, 2013, pp. 40804086. DOI 10.1109/TNS.2013.2281771

  55. Lin Ray-Ming, Chu Fu-Chuan, Das Atanu, Liao S.-Y., Su V.-C.: Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer. Japanese Journal of Applied Physics, Vol. 52, no. 11, Part 1, 2013, Article # UNSP 111002. DOI 10.7567/JJAP.52.111002

  56. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: Impact of Temperature and Indium Composition in the Channel on the Microwave Performance of Single-Gate and Double-Gate InAlAs/InGaAs HEMT. IEEE Trans on Nanotechnology, Vol. 12, no. 6, 2013, pp. 965970. DOI 10.1109/TNANO.2013.2276415

  57. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT. J. of Semiconductor Technology & Science, Vol. 13, no. 4, 2013, pp. 331341. DOI 10.5573/JSTS.2013.13.4.331

  58. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization of In0.52Al0.48As/InmGa1-mAs (0,53 <= m <= 0,8) DG-HEMT. IEEE Trans on Device and Materials Reliability, Vol. 13, no. 1, 2013, pp. 293300. DOI 10.1109/TDMR.2013.2243913

  59. Arakawa T., Nishihara Y., Maeda M., Norimoto S., Kobayashi K.: Cryogenic amplifier for shot noise measurement at 20 mK. Applied Physics Letters, Vol. 103, no. 17, 2013, Article # 172104. DOI 10.1063/1.4826681

  60. Shinohara Keisuke, Regan D.C., Tang Yan, et al.: Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications. IEEE Trans on ED, Vol. 60, no. 10, Special no. SI, 2013, pp. 29822996. DOI 10.1109/TED.2013.2268160

  61. Saunier P., Schuette M.L., Chou Tso-Min, et al.: InAlN Barrier Scaled Devices for Very High f(T) and for Low-Voltage RF Applications. IEEE Trans on ED, Vol. 60, no. 10, Special no. SI, 2013, pp. 30993104. DOI 10.1109/TED.2013.2277772

  62. Moschetti G., Lefebvre E., Fagerlind M., et al.: DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation. Solid-State Electronics, Vol. 87, 2013, pp. 8589. DOI 10.1016/j.sse.2013.06.008

  63. Radisic V., Leong K.M.K.H., Zhang Chunbo, Loi K.K., Sarkozy S.: Demonstration of a Micro-Integrated Sub-Millimeter-Wave Pixel. IEEE Trans on MTT, Vol. 61, no. 8, Part 1, 2013, pp. 29492955. DOI 10.1109/TMTT.2013.2272379

  64. Leong K.M.K.H., Mei G., Radisic V., Sarkozy S., Deal W.: THz Integrated Circuits using InP HEMT Transistors. 25th IEEE Int. Conf. On Indium Phosphide and Related Materials (IPRM), 2013, pp. 1 – 4. DOI 10.1109/ICIPRM.2012.6403302

  65. Chiu Hsien-Chin, Lin Chao-Wei, Huang Fan-Hsiu, et al.: Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. Microelectronics Reliability, Vol. 53, no. 3, 2013, pp. 405408. DOI 10.1016/j.microrel.2012.10.005

  66. Marinkovic Z., Ivkovic N., Pronic-Rancic O., et al.: Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors. Microelectronics Reliability, Vol. 53, no. 3, 2013, pp. 414419. DOI 10.1016/j.microrel.2012.09.003

  67. Li Yihu, Ling Goh Wang, Ng Geok Ing, et al.: Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon. Electronics Lett., Vol. 49, no. 2, 2013, pp. 156157. DOI 10.1049/el.2012.4285

  68. Sadeghi S., Vadizadeh M., Faez R.: Compare Noise Characteristic of DC-HEMT and HEMT. 21st Iranian Conf. on Electrical Engineering (ICEE), 2013. DOI 10.1109/IranianCEE.2013.6599546

  69. Karboyan, S., Tartarin, J. G., Labat, N., Lambert B.: Gate and Drain Low Frequency Noise of AlGaN/GaN HEMTs Featuring High and Low Gate Leakage Currents. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013. DOI 10.1109/ICNF.2013.6578954

  70. Tartarin J.G., Karboyan S., Carisetti D., Lambert B.: Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013, pp.14. DOI 10.1109/ICNF.2013.6578987

  71. Shiktorov P., Gruzinskis V., Starikov E., et al.: Monte Carlo Simulation of Low-Frequency Excess Noise in InP MOSFETs/HEMTs at Impact Ionization Conditions. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013. DOI 10.1109/ICNF.2013.6578932

  72. Rudolph M., Doerner R.: Towards a Large-Signal Noise Model for GaN HEMT Devices. 8th European Microwave Integrated Circuits Conf (EuMIC), 2013, pp. 484487. INSPEC Accession Number: 13990893.

  73. Leszczynski M., Prystawko P., Kruszewski P., et al.: Comparison of SiC and GaN Substrates Used for Epitaxy of HEMT Structures. 8th European Microwave Integrated Circuits Conf (EuMIC), 2013, pp. 526 – 529. INSPEC Accession Number: 13999554.

  74. Colangeli S., Bentini A., Ciccognani W., Limiti E., Nanni A.: GaN-Based Robust Low-Noise Amplifiers. IEEE Trans on ED, Vol. 60, no. 10, Special no. SI, 2013, pp. 32383248. DOI 10.1109/TED.2013.2265718

  75. Schleeh J., Alestig G., Halonen J., Malmros A., Nilsson B., Nilsson P. A., Starski J. P., Wadefalk N., Zirath H., Grahn J.: Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz. IEEE ED Letters, Vol. 33, no. 5, 2012, pp. 664 – 666. DOI 10.1109/LED.2012.2187422

  76. Hsien-Chin Chiu, Jia-Hsuan Wu, Chih-Wei Yang, Fan-Hsiu Huang, Hsuan-Ling Kao: Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked Al2O3/Ga2O3/Gd2O3 Gate Dielectric. IEEE ED Letters, Vol. 33, no. 7, 2012, pp. 958 – 960. DOI 10.1109/LED.2012.2194980

  77. Medjdoub F., Tagro Y., Zegaoui M., Grimbert B., Danneville F., Ducatteau D., Rolland N., Rolland P.A.: Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz. IEEE ED Letters, Vol. 33, no. 9, 2012, pp. 1258 – 1260. DOI 10.1109/LED.2012.2205215

  78. Bhattacharya M., Jogi J., Gupta R.S., Gupta M.: An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetric Tied-Gate InAlAs/InGaAs DG-HEMT. IEEE Trans on ED, Vol. 59, no. 6, 2012, pp. 1644 – 1652. DOI 10.1109/TED.2012.2190738

  79. Takahashi T., Sato M., Nakasha Y., Hirose T., Hara N.: Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs. IEEE Trans on ED, Vol. 59, no. 8, 2012, pp. 2136 – 2141. DOI 10.1109/TED.2012.2200254

  80. Kobayashi K. W.: An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3. IEEE Journal of SSC, Vol. 47, no. 10, 2012, pp. 2316 – 2326. DOI 10.1109/JSSC.2012.2204929

  81. Mateos J., Gonzalez T.: Plasma Enhanced Terahertz Rectification and Noise in InGaAs HEMTs. IEEE Trans on Terahertz Science and Technology, Vol. 2, no. 5, 2012, pp. 562 – 569. DOI 10.1109/TTHZ.2012.2209970

  82. Kong C., Li H., Chen X., Jiang S., Zhou J., Chen C.: A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor. IEEE Trans on MTT, Vol. 60, no. 11, 2012, pp. 3413 – 3419. DOI 10.1109/TMTT.2012.2209442

  83. Chiu H.-C., Yang C.-W., Chen C.-H., Wu C.-H.: Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. IEEE Trans on ED, Vol. 59, no. 12, 2012, pp. 3334 – 3338. DOI 10.1109/TED.2012.2215872

  84. Rendek K., Satka A., Donoval D.: Measurement set-up for low-frequency noise characterization of GaN HEMT transistors. Int. Conf. Radioelektronika (RADIOELEKTRONIKA), 2012, pp. 1 – 4. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6207675&isnumber=6207636

  85. Wiatr W.: Source-pull noise characterization of GaAs pHEMTs. Int. Conf on Microwave Radar and Wireless Communications (MIKON), Vol. 2, 2012, pp. 794 – 798. DOI 10.1109/MIKON.2012.6233579

  86. Schleeh J., Wadefalk N., Nilsson P. A., Starski J. P., Alestig G., Halonen J., Nilsson B., Malmros A., Zirath H., Grahn J.: Cryogenic 0.5–13 GHz low noise amplifier with 3 K mid-band noise temperature. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259542

  87. Masuda Satoshi, Yamada Masao, Kamada Youichi, Ohki Toshihiro, Makiyama Kozo, Okamoto Naoya, Imanishi Kenji, Kikkawa Toshihide, Shigematsu Hisao: GaN single-chip transceiver frontend MMIC for X-band applications. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259470

  88. Samoska L., Varonen M., Reeves R., Cleary K., Gawande R., Kangaslahti P., Gaier T., Lai R., Sarkozy S.: W-Band cryogenic InP MMIC LNAs with noise below 30K. IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6258356

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