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NOISE in HETEROJUNCTION BIPOLAR TRANSISTOR

What we call 'Progress' is the exchange of one nuisance for another nuisance”

(Havelock Ellis, 1859 - 1939)

  1. Hou L., Du Z., Fu J.: The Influence of Microwave Pulse Width on the Thermal Burnout Effect of an LNA Constructed by the SiGe HBT. IEEE Trans. on EMC, Vol. 59, no. 1, 2017, pp. 163 – 171. DOI 10.1109/TEMC.2016.2603525

  2. Song I., Moon-Kyu Cho, Nelson E. Lourenco, et al.: The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients. IEEE Trans. on Nuclear Science, Vol. 64, no. 1, 2017, pp. 359 – 366. DOI 10.1109/TNS.2016.2603165

  3. Song I., Raghunathan Uppili S., Nelson E. Lourenco, et al.: An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers. IEEE Trans. on Nuclear Science, Vol. 63, no. 2, 2016, pp. 1099 – 1108. DOI 10.1109/TNS.2016.2518400

  4. Mukherjee C., Jacquet T., Chakravorty A., et al.: Low-Frequency Noise in Advanced SiGe:C HBTs - Part I: Analysis. IEEE Trans. on ED, Vol. 63, no. 9, 2016, pp. 3649 – 3656. DOI 10.1109/TED.2016.2589159

  5. Mukherjee C., Jacquet, T., Chakravorty, A., et al.: Low-Frequency Noise in Advanced SiGe:C HBTs - Part II: Correlation and Modeling. IEEE Trans. on ED, Vol. 63, no. 9, 2016, pp. 3657 – 3662. DOI 10.1109/TED.2016.2588318

  6. Mukherjee C., Jacquet T., Zimmer T., et al.: Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. 46th European Solid-State Device Research Conf. (ESSDERC), 2016, pp. 260 – 263. DOI 10.1109/ESSDERC.2016.7599635

  7. Chen Xiaoming, Wang Lin, Li Boxun, et al.: Modeling Random Telegraph Noise as a Randomness Source and its Application in True Random Number Generation. IEEE Trans. on CAD of Integrated Circuits & Systems, Vol. 35, no. 9, 2016, pp. 1435 – 1448. DOI 10.1109/TCAD.2015.2511074

  8. Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin: Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region. Active and Passive Electronic Components, Vol. 2016, 2016, Article # 8506507, 5 pages. http://dx.doi.org/10.1155/2016/8506507

  9. Sakalas P., Nardmann T., Simukovic A., Schroter M., Zirath H.: Microwave Noise Analysis in InP and GaAs HBTs. IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), 2016, pp. 1 – 4. DOI 10.1109/CSICS.2016.7751054

  10. Coen C.T., ăağrı Ulusoy A.; Song P.; et al.: Design and On-Wafer Characterization of G -Band SiGe HBT Low-Noise Amplifiers. IEEE Trans. on MTT, Vol. 64, no. 11, 2016, pp. 3631 – 3642. DOI 10.1109/TMTT.2016.2608773

  11. Jianjun Gao: Microwave Noise modeling and Parameter Extraction Technique for HBTs. Chapter 7 from the book: Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and parameter Extraction, John Wiley & Sons, 2015, 280 pages. ISBN 1118921542, 9781118921548

  12. Lee C.I., Lin Y.T., Lin W.C.: An Improved Noise Model for SiGe HBT With an Inductive Breakdown Network in the Avalanche Region. IEEE Trans on Device and Materials Reliability, Vol. 15, no. 4, 2015, pp. 588594. DOI 10.1109/TDMR.2015.2490084

  13. Kumar K., Chakravorty A., Fischer G.G., Wipf C.: Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs. IEEE Trans. on ED, Vol. 62, no. 8, 2015, pp. 23842389. DOI 10.1109/TED.2015.2444472

  14. Nallatamby J.C., Laurent S., Prigent M., et al.: Comprehensive analysis of GR noise in InGaP---GaAs HBT by physics-based simulation and low frequency characterization. Journal of Computational Electronics, Vol. 14, no. 1, 2015, pp. 4 – 14. DOI 10.1007/s10825-014-0639-z

  15. Guofu Niu, Rongchen Ma, Lan Luo, Cressler J.D.: Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics. Noise Modelling of High Frequency Semiconductor Devices, Vol. 28, no. 6, 2015, pp. 675 – 683. DOI 10.1002/jnm.2055

  16. Sakalas P., Schroter M., Zirath H.: mm-Wave noise modeling in advanced SiGe and InP HBTs. Journal of Computational Electronics, Vol. 14, 2015, no. 1, pp. 62 – 71. DOI 10.1007/s10825-015-0664-6

  17. Nanda R.K., Dash T.P., Das S., Maiti C.K.: Noise characterization of Silicon-Germanium HBTs. Int. Conf. on Microwave, Optical & Communication Eng. (ICMOCE), 2015, pp. 284287. DOI 10.1109/ICMOCE.2015.7489747

  18. Seif M., Pascal F., Sagnes B., Hoffmann A., et al.: Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs. Int. Conf on Noise and Fluctuations (ICNF), 2015, pp. 14. DOI 10.1109/ICNF.2015.7288551

  19. Michaelsen R.S., Johansen T.K., Tamborg K., Squartecchia M.: Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology. Integrated Nonlinear Microwave & Millimetre-wave Circuits Workshop (INMMiC), 2015, pp. 13. DOI 10.1109/INMMIC.2015.7330373

  20. Bardin J.C., Coskun A.H., Ayata M., Boynton Z.G., Li J.C.: Broadband Noise Performance of Heterogeneously Integrated InP BiCMOS DHBTs. IEEE Electron Device Lett., Vol. 35, no.10, 2014, pp. 9981000. DOI 10.1109/LED.2014.2343942

  21. Bardin J.C., Li J.C., Coskun A.H., Ayata M., Boynton Z.G.: Microwave noise properties of heterojunction bipolar transistors. IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM), 2014, pp. 1724. DOI 10.1109/BCTM.2014.6981277

  22. Pasquet D., Descamps P., LesÚnÚchal D.: Analytical extraction of the noise sources characteristics of an SiGe HBT. 20th Int. Conf on Microwaves, Radar & Wireless Communications (MIKON), 2014, pp. 1 – 3. DOI 10.1109/MIKON.2014.6899981

  23. Seif M., F. Pascal, B. Sagnes, A. Hoffmann, et al.: Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors. 44th European Solid State Device Research Conf. (ESSDERC), 2014, pp. 373 – 376. DOI 10.1109/ESSDERC.2014.6948838

  24. Thanh Ngoc, Thi Do, H÷rberg M., Lai S., Kuylenstierna D.: Low frequency noise measurements - A technology benchmark with target on oscillator applications. 44th European Microwave Conf., 2014, pp. 1412 – 1415. DOI 10.1109/EuMC.2014.6986710

  25. Kumar P., Chauhan R.K., Gupta M.: TCAD Simulation, Small-Signal and Noise Modeling of Si Based Bandgap Engineered Semiconductor Device for Near THz Applications. 4th Int. Conf. on Advanced Computing & Communication Technologies, 2014, pp. 144 – 149. DOI 10.1109/ACCT.2014.47

  26. Pospieszalski M.W.: On noise properties of transistors and amplifiers: a critical review. 20th Int. Conf on Microwaves, Radar & Wireless Communications (MIKON), 2014, pp. 1 – 5. DOI 10.1109/MIKON.2014.6899979

  27. Xiaojia Jia, Guofu Niu: Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications. IEEE Trans on ED, Vol. 61, no. 7, 2014, pp. 2324 – 2331. DOI 10.1109/TED.2014.2324031

  28. Al Hajjar A., Nallatamby J.-C., Prigent M.: Comprehensive analysis of traps in InGaP/GaAs HBT by GR noise. 10th Conf. on Ph.D. Research in Microelectronics & Electronics (PRIME), 2014, pp.1 – 4 DOI 10.1109/PRIME.2014.6872695

  29. Zeinolabedinzadeh S., Song P., Kaynak M., Kamarei M., Tillack B., Cressler J.D.: Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology. IEEE MTT-S Int. Microwave Symp. Digest (IMS), 2014, pp.1 – 4, DOI 10.1109/MWSYM.2014.6848559

  30. Seif M., Pascal F., Sagnes B., Haendler S.: Characterization and modeling of low frequency noise in 0.13 Ám BiCMOS SiGe:C heterojunction bipolar trasnsistors. 10th Conf. on Ph.D. Research in Microelectronics & Electronics (PRIME), 2014, pp.1 – 4 DOI 10.1109/PRIME.2014.6872699

  31. Deng M., Poulain L., Gloria D., et al.: Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130-170 GHz Range. IEEE Trans on MTT, Vol. 24 , no. 9, 2014, pp. 649 – 651. DOI 10.1109/LMWC.2014.2331762

  32. Vitale F., van der Toorn R.: Lumped Models for Assessment and Optimization of Bipolar Device RF Noise Performance. IEEE Trans on ED, Vol. 60, no. 11, 2013, pp. 3870 – 3876. DOI 10.1109/TED.2013.2281237

  33. Vitale F., van der Toorn R.: Comparative analysis of compact noise model formulations for SiGe-HBTs. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, pp. 131 – 134. DOI 10.1109/BCTM.2013.6798161

  34. Jungemann C., Sung-Min Hong: Investigation of electronic noise in THz SiGe HBTs by microscopic simulation. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, pp. 1 – 8. DOI 10.1109/BCTM.2013.6798131

  35. Sakalas P., Schroter M.: Microwave noise in InP and SiGe HBTs: Modeling and challenges. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 6. DOI 10.1109/ICNF.2013.6578897

  36. Seif M., Pascal F., Sagnes B., Hoffmann A., Haendler S., Chevalier P., Gloria D.: Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578977

  37. Sevimli O., Parker A.E., Mahon S.J., Fattorini A.P.: Time-varying low-frequency noise in InGaP/GaAs HBTs. Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578956

  38. Pacheco-Sanchez A., Ramirez-Garcia E., Rodriguez-Mendez L., Galaz-Larios M., Marquez-Beltran C., Enciso-Aguilar M.: Microwave noise sources contributions to SiGe:C/Si and InP/InGaAs HBT's performances. Revista Mexicana de Fisica, Vol. 59 , no. 2, 2013, pp. 148 – 152.

  39. Bimana Abahahigwa, Sinha Saurabh: Impact of SiGe HBT Parameters to the Performance of LNAs for Highly Sensitive SKA Receivers. 23rd Int. Conf. Radioelektronika (RADIOELEKTRONIKA), 2013, pp. 50 – 54.

  40. Kejun Xia, Guofu Niu, Ziyan Xu: A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling. IEEE Trans on ED, Vol. 59, no. 2, 2012, pp. 302 – 308. DOI 10.1109/TED.2011.2174795

  41. Luis-Pineda L.F., Ramirez-Garcia E., Zerounian N., Aniel F., Aguilar M.A.E.: Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT. 9th Int. Conf. on Electrical Eng., Computing Science & Automatic Control (CCE), 2012, pp. 1 – 4. DOI 10.1109/ICEEE.2012.6421151

  42. Poh C.H.J., Seth S., Schmid R.L., Cressler J.D., Papapolymerou J.: Low-power and low-voltage x-band silicongermanium heterojunction bipolar transistor low-noise amplifier. IET Microwaves, Antennas & Propagation, Vol. 6, no. 12, 2012, pp. 1325 – 1331. DOI 10.1049/iet-map.2012.0224

  43. Ramirez-Garcia E., Aniel F., Enciso-Aguilar M.A., Zerounian N.: Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors. European Microwave Integrated Circuits Conf (EuMIC), 2012, pp. 175 – 178. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6483764&isnumber=6483692

  44. Augustine N., Kumar K., Chakravorty A., Bhattacharyya A., Zimmer T.: Efficient models for non-quasi-static effects and correlated noise in SiGe HBTs. IEEE Int. Conf. of Electron Devices and Solid-State Circuits (EDSSC), 2012, pp. 1 – 4. DOI 10.1109/EDSSC.2012.6482848

  45. Dacquay E., Tomkins A., Yau K.H.K., Laskin E., Chevalier P., Chantre A., Sautreuil B., Voinigescu S. P.: D-Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology. IEEE Trans. on MTT, Vol. 60, no. 3, 2012, pp. 813 – 826. DOI 10.1109/TMTT.2012.2184132

  46. Zhao Y., Ojefors E., Aufinger K., Meister T. F., Pfeiffer U. R.: A 160-GHz Subharmonic Transmitter and Receiver Chipset in an SiGe HBT Technology. IEEE Trans on MTT, Vol. 60, no. 10, 2012, pp. 3286 – 3299. DOI 10.1109/TMTT.2012.2209450

  47. Debin Hou, Yong-Zhong Xiong, Wang-Ling Goh, Wei Hong, Madihian M.: A D-Band Cascode Amplifier With 24.3 dB Gain and 7.7 dBm Output Power in 0.13 mm SiGe BiCMOS Technology. IEEE Microwave & Wireless Comp. Lett., Vol. 22, no. 4, 2012, pp. 191 – 193. DOI 10.1109/LMWC.2012.2188624

  48. Liu G., Trasser A., Schumacher H.: A 64–84-GHz PLL With Low Phase Noise in an 80-GHz SiGe HBT Technology. IEEE Trans on MTT, Vol. 60, no. 12, part 1, 2012, pp. 3739 – 3748. DOI 10.1109/TMTT.2012.2213833

  49. Kobayashi K. W.: An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3. IEEE J. of SSC, Vol. 47, no. 10, 2012, pp. 2316 – 2326. DOI 10.1109/JSSC.2012.2204929

  50. Herricht J., Sakalas P., Ramonas M., Schroter M., Jungemann C., Mukherjee A., Moebus K. E.: Systematic Compact Modeling of Correlated Noise in Bipolar Transistors. IEEE Trans on MTT, Vol. 60, no. 11, 2012, pp. 3403 – 3412. DOI 10.1109/TMTT.2012.2216284

  51. Dinc T., Zihir S., Gurbuz Y.: SiGe building blocks for on-chip X-Band T/R modules. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Syst. (SiRF), 2012, pp. 57 – 60. DOI 10.1109/SiRF.2012.6160132

  52. Quemerais T., Gloria D., Jan S., Derrier N., Chevalier P.: Millimeter-wave characterization of Si/SiGe HBTs noise parameters featuring fT/fMAX of 310/400 GHz. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2012, pp. 351 – 354. DOI 10.1109/RFIC.2012.6242297

  53. Saha P.K., Shankar S., Schmid R., Mills R., Cressler J.D.: Analysis and design of a 3–26 GHz low-noise amplifier in SiGe HBT technology. IEEE Radio and Wireless Symposium (RWS), 2012, pp. 203 – 206. DOI 10.1109/RWS.2012.6175372

  54. Ziyan Xu, Guofu Niu: Compact modeling based extraction of RF noise in SiGe HBT terminal currents. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Syst. (SiRF), 2012, pp. 137 – 140. DOI 10.1109/SiRF.2012.6160162

  55. Wang Cong, Kim Nam-Young: Design of low phase noise LC VCO using asymmetric inductance tank and HNFF technology in InGaP/GaAs HBT process. IEEE MTT-S Int. Microwave Symp Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259493

  56. Niehenke. E.C.: The evolution of low noise devices and amplifiers. IEEE MTT-S Int. Microwave Symp Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6258248

  57. Pei Shen, Guofu Niu, Ziyan Xu, Wanrong Zhang: Impact of high frequency correlated noise on SiGe HBT low noise amplifier design. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Syst. (SiRF), 2012, pp. 125 – 128. DOI 10.1109/SiRF.2012.6160163

  58. Szhau Lai, Mingquan Bao, Kuylenstierna D., Zirath H.: A method to lower VCO phase noise by using HBT Darlington pair. IEEE MTT-S Int. Microwave Symp Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6259421

  59. Lu Z.Y., Xie H.Y., Zhang W.R., Guo Z.J., Xing G.H., Zhang Y.J.: Design of dual band SiGe HBT LNA with EM simulation. Int. Conf on Microwave and Millimeter Wave Technology (ICMMT), 2012, Vol. 5, pp. 1 – 3. DOI 10.1109/ICMMT.2012.6230470

  60. Kozhuharov R., Bao Mingquan, Gavell M., Zirath H.: A W- and G-band MMIC source using InP HBT technology. IEEE MTT-S Int. Microwave Symp Digest (MTT), 2012, pp. 1 – 3. DOI 10.1109/MWSYM.2012.6258435

  61. Wipf C.: A new method to analyze the behavior of SiGe:C HBTs under RF large signal stress. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Syst. (SiRF), 2012, pp. 97 – 100. DOI 10.1109/SiRF.2012.6160152

  62. Jahn M., Aufinger K., Meister T.F., Stelzer A.: 125 to 181 GHz fundamental-wave VCO chips in SiGe technology. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2012, pp. 87 – 90. DOI 10.1109/RFIC.2012.6242238

  63. Hamouda M., Fischer G., Weigel R., Ussmueller T.: A low power SiGe HBT LNA For UWB applications. The 7th German Microwave Conference (GeMiC), 2012, pp. 1 – 4. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6185167&isnumber=6185137

  64. Ping-Hsun Wu, Jian-Yu Li, Yu-Chi Wang, Powen Hsu: GaAs Bi-FET RF front-end MMIC for WiMAX applications. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2012, pp. 287 – 290. DOI 10.1109/RFIC.2012.6242283

  65. Yibing Zhao, Bin Hou, Shuyun Zhang: Monolithically integrated high performance digital variable gain amplifiers. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2012, pp. 159 – 162. DOI 10.1109/RFIC.2012.6242254

  66. Vitale F., Pijper R., van der Toorn R.: Compact noise modeling of SiGe Heterojunction Bipolar Transistors: Relevance of base-collector shot noise correlation and non quasi-static effects in the quasi-neutral emitter. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, pp. 178 – 181. DOI 10.1109/BCTM.2011.6082776

  67. Fjer M., Persson S., Escobedo-Cousin E., O'Neill A.G.: Noise performance in strained Si Heterojunction Bipolar Transistors. Proc. of the European Solid-State Device Research Conf (ESSDERC), 2011, pp. 271 – 274. DOI 10.1109/ESSDERC.2011.6044182

  68. Kumar K., Chakravorty A.: Modeling high-frequency noise in SiGe HBTs using delayed minority charge. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, pp. 183 – 186. DOI 10.1109/BCTM.2011.6082777

  69. Seth S., Poh C.H.J., Thrivikraman T., Arora R., Cressler J.D.: Using saturated SiGe HBTs to realize ultra-low voltage/power X-band low noise amplifiers. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, pp. 103 – 106. DOI 10.1109/BCTM.2011.6082758

  70. Waldhoff N., Danneville F., Rolland N., Rolland P., Aufinger K.: Bias point optimization for low power / low noise applications of advanced SiGe HBT. European Microwave Integrated Circuits Conf (EuMIC), 2011, pp. 386 – 389. Print ISBN: 978-1-61284-236-3

  71. Fjer M., Persson S., Escobedo-Cousin E., O'Neill A.G.: Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors. IEEE Trans on ED, Vol. 58, no. 12, 2011, pp. 4196 – 4203. DOI 10.1109/TED.2011.2167753

  72. Jin Tang, Babcock J.A., Krakowski T.L., Smith L., Cestra G.: Characterization and modeling of SiGe HBT low-frequency noise in inverse operating condition. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, pp. 174 – 177. DOI 10.1109/BCTM.2011.6082775

  73. Yau K.H.K., Chevalier P., Chantre A., Voinigescu S.P.: Characterization of the Noise Parameters of SiGe HBTs in the 70–170-GHz Range. IEEE Trans on MTT, Vol. 59, no. 8, 2011, pp. 1983 – 2000. DOI 10.1109/TMTT.2011.2153869

  74. Pacheco-Sanchez A., Enciso-Aguilar M., Rodriguez-Mendez L., Ramirez-Garcia E.: Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias. SBMO/IEEE MTT-S Int.Microwave & Optoelectronics Conf (IMOC), 2011, pp. 901 – 904. DOI 10.1109/IMOC.2011.6169331

  75. Magnee P.H.C., van Dalen R., Mertens H., Vanhoucke T., van Velzen B., Huiskamp P., Brunets I., Donkers J.J.T.M., Klaassen D.B.M.: SiGe:C profile optimization for low noise performance. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, pp. 166 – 169. DOI 10.1109/BCTM.2011.6082773

  76. Diop M., Ighilahriz S., Cacho F., Huard V.: 250 GHz heterojunction bipolar transistor: From DC to AC reliability. IEEE Int. Reliability Physics Symp. (IRPS), 2011, pp. 4E.5.1 – 4E.5.5. DOI 10.1109/IRPS.2011.5784513

  77. Pascal F., Raoult J., Sagnes B., Hoffmann A., Haendler S., Morin G.: Improvement of 1/f noise in advanced 0.13 Ám BiCMOS SiGe:C Heterojunction Bipolar Transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 279 – 282. DOI 10.1109/ICNF.2011.5994321

  78. Labat N., Malbert N., Maneux C., Curutchet A., Grandchamp B.: Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 458 – 463. DOI 10.1109/ICNF.2011.5994368

  79. Gang Liu, Trasser A., Schumacher H. : 33 – 43 GHz and 66 – 86 GHz VCO With High Output Power in an 80 GHz fT SiGe HBT Technology. IEEE Microwave and Wireless Components Letters, Vol. 20, no. 10, 2010, pp. 557 – 559. DOI 10.1109/LMWC.2010.2066262

  80. Rodriguez-Testera A., Mojon O, Fernandez-Barciela M, Sanchez E, Tasker P J: Nonlinear HBT table-based model including low-frequency noise effects. Electronics Lett., Vol. 46, no. 9, 2010, pp. 635 – 636. DOI 10.1049/el.2010.2883

  81. Jiahui Yuan, Cressler J.D., Krithivasan R., Thrivikraman T., Khater M.H., Ahlgren D.C., Joseph A.J., Jae-Sung Rieh: On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds. IEEE Trans on ED, Vol 56, no. 5, 2009, pp. 1007 – 1019. DOI 10.1109/TED.2009.2016017

  82. Hong S.-M., Jungemann C.: Electron transport in extremely scaled SiGe HBTs. IEEE BCTM (Bipolar/BiCMOS Circuits and Technology Meeting), 2009, pp. 67 – 74. DOI 10.1109/BIPOL.2009.5314141

  83. Waldhoff N., Danneville F., Dambrine G., Geynet B., Chevalier P.: Investigation of SiGe HBT potentialities under cryogenic temperature. Proc of ESSDERC '09, 2009, pp. 121 – 124. DOI 10.1109/ESSDERC.2009.5331374

  84. Rudolph M., Bonani F.: Low-frequency noise in nonlinear systems. IEEE Microwave Magazine, Vol. 10, no 1,2009, pp. 84 – 92. DOI 10.1109/MMM.2008.930678

  85. Kuylenstierna D., Zirath H.; Kozuharov R., Mingquan Bao, Tsai T.C.: Low phase noise MMIC oscillators in InGaP HBT technology. APMC 2008 Microwave Conference, 2008, pp. 1 – 4. DOI 10.1109/APMC.2008.4957918

  86. Ferre-Pikal E., Savage F.H.: Up-converted 1/f PM and AM noise in linear HBT amplifiers. IEEE Trans on Ultrasonics, Ferroelectrics and Frequency Control, Vol. 55, no. 8, 2008, pp. 1698 – 1704. DOI 10.1109/TUFFC.2008.855

  87. Rudolph M., Korndrfer F., Heymann P., Heinrich W. : Compact Large-Signal Shot-Noise Model for HBTs. IEEE Trans on MTT, Vol. 56, no. 1, 2008, pp. 7 – 14. DOI 10.1109/TMTT.2007.911944

  88. Grandchamp B., Maneux C., Labat N., Touboul A., Scavennec A., Riet M., Godin J.: Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT. 20th Int. Conf on Indium Phosphide and Related Materials (IPRM 2008), 2008, pp. 1 – 4. DOI 10.1109/ICIPRM.2008.4703044

  89. Raoult J., Pascal F., Delseny C., Marin M., Deen M. J.: Impact of carbon concentration on 1/f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors. Journal of Applied Physics, Vol. 103, no. 11, 2008, pp. 114508 – 114508-10. DOI 10.1063/1.2939252

  90. Kun-Ming Chen, Han-Yu Chen, Guo-Wei Huang, Wen-Shiang Liao, Chun-Yen Chang: RF noise modeling of SiGe HBTs using four-port de-embedding method. Proc. Asia-Pacific Microwave Conf. (APMC), 2008, pp. 1 – 4. DOI 10.1109/APMC.2008.4958381

  91. Hui Li, Zhenqiang Ma, Guofu Niu: Transport shot noise models and Nfmin comparison for SiGe HBTs under different operation configurations. 2007 European Microwave Integrated Circuit Conf. (EuMIC 2007), 2007, pp. 203 – 206. DOI 10.1109/EMICC.2007.4412684

  92. Banerjee B., Venkataraman S., Chang – Ho Lee, Laskar J.: Broadband Noise Modeling of SiGe HBT under Cryogenic Temperatures. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2007 , pp. 765 – 768. DOI 10.1109/RFIC.2007.380995

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