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NOISE in JUNCTION DIODE

Never discourage anyone ... who continually makes progress, no matter how slow”

(Platon, 427 BC - 347 BC

  1. Miyasaka Yuji, Hiraki Tatsurou, Okazaki Kota, et al.: Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si. Japanese Journal of Applied Physics, Vol. 55, no. 4, Special no. SI, 2016, pp. EH410 EH410. DOI 10.7567/JJAP.55.04EH10

  2. Campbell J.C.: Recent Advances in Avalanche Photodiodes. J. of Lightwave Technology, Vol. 34, no. 2, 2016, pp. 278 – 285. DOI 10.1109/JSTQE.2004.833971

  3. Kumar Ashutosh, Kashid Ranjit, Ghosh Arindam, et al.: Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode. ACS Applied Materials & Interfaces, Vol. 8, no. 12, 2016, pp. 8213 8223. DOI 10.1021/acsami.5b12393

  4. Zhu Miao, Li Xinming, Li Xiao, et al.: Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector. J. of Applied Physics, Vol. 119, no. 12, 2016, pp. 24303 24303. DOI 10.1063/1.4944945

  5. Lioliou G., Meng X., Ng J.S., et al.: Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature. Nuclear Instruments & Methods in Physics Research: Section A - Accelerators Spectrometers Detectors & Associated Equipment, Vol. 813, 2016, pp. 1 9. DOI 10.1016/j.nima.2015.12.030

  6. Khurelbaatar Zagarzusem, Kil Yeon-Ho, Shim Kyu-Hwan, et al.: Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode. Superlattices and Microstructures, Vol. 91, 2016, pp. 306 312. DOI 10.1016/j.spmi.2016.01.029

  7. Calandri N., Sanzaro M., Tosi A., Zappa F.: Charge Persistence in InGaAs/InP Single-Photon Avalanche Diodes. IEEE Journal of Quantum Electronics, Vol. 52, no. 3, 2016, Article # 4500107. DOI 10.1109/JQE.2016.2526608

  8. Woodson M.E., Ren Min, Maddox S.J., et al.: Low-noise AlInAsSb avalanche photodiode. Applied Physics Letters, Vol. 108, no. 8, 2016, Article # 081102. DOI 10.1063/1.4942372

  9. Qiao L., Cheong J.S., Ong J.S.L., et al.: Avalanche Noise in Al0.52In0.48P Diodes. IEEE Photonics Technology Lett., Vol. 28, no. 4, 2016, pp. 481 484. DOI 10.1109/LPT.2015.2499545

  10. Prince Shanthi, Vibin A.M.: Optical Wireless Audio Communication Using LED Lighting System. Wireless Personal Communications, Vol. 86, no. 3, 2016, pp. 1159 1168. DOI 10.1007/s11277-015-2980-3

  11. Ishii Masashi, Koizumi Atsushi, Fujiwara Yasufumi: Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current. Japanese Journal of Applied Physics, Vol. 55, no. 1, 2016, Article # 015801. DOI 10.7567/JJAP.55.015801

  12. Ko Young-Uk, Yun Ho-Jin, Jeong Kwang-Seok, et al.: Current-voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers. Thin Solid Films, Vol. 598, 2016, pp. 109 114. DOI 10.1016/j.tsf.2015.12.009

  13. Ibuchi Takaaki, Funaki Tsuyoshi, Ujita Shinji, Ishida Masahiro, Ueda Tetsuzo: Conducted noise of GaN Schottky barrier diode in a DC-DC converter. IEICE Electronics Express, Vol. 12, no. 24, 2015, Article # 20150912. DOI 10.1587/elex.12.20150912

  14. Zhu Hui-Hui, Feng Fei, Wang Yue-Lin, Li Xin-Xin: Noise analysis and structural optimal design of diode microbolometer uncooled IRFPAs. J. of Infrared and Millimeter Waves, Vol. 34, no. 6, 2015, pp. 647 653.

  15. Klyuev A.V., Yakimov A.V.: Investigation of 1/f Noise and Superimposed RTS Noise in Ti-Au/n-Type GaAs Schottky Barrier Diodes. Fluctuation & Noise Lett., Vol. 14, no. 4, 2015, Article # 1550041. DOI 10.1142/S0219477515500418

  16. A.V. Klyuev, A.V. Yakimov, I.S. Zhukova: 1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes. Fluctuation and Noise Lett., Vol. 14, no. 3, 2015, Article # 1550029. DOI 10.1142/S0219477515500297

  17. Klyuev A.V., Shmelev E.I., Yakimov A.V.: Description of the Spectrum of Natural Noise in Semiconductor Diodes Based on the Modified Van der Ziel Relation. Radiophysics and Quantum Electronics, Vol. 57, no. 12, 2015, pp. 891 899. DOI 10.1007/s11141-015-9573-6

  18. Kumar A., Nagarajan S., Sopanen M., et al.: Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode. Semiconductor Science and Technology, Vol. 30, no. 10, 2015, Article # 105022. DOI 10.1088/0268-1242/30/10/105022

  19. Kumar A., Latzel M., Christiansen S., Kumar V., Singh R.: Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes. Applied Physics Letters, Vol. 107, no. 9, 2015, Article # 093502. DOI 10.1063/1.4929829

  20. An Yanbin, Behnam Ashkan, Pop Eric, Bosman Gijs, Ural Ant: Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer. J. of Applied Physics, Vol. 118, no. 11, 2015, Article # 114307. DOI 10.1063/1.4931142

  21. Ito H., Ishibashi T.: Fermi-level managed barrier diode for broadband and low-noise terahertz-wave detection. Electronics Lett., Vol. 51, no. 18, 2015, pp. 1440 – 1442. DOI 10.1049/el.2015.1743

  22. Kasjoo Shahrir R., Singh Arun K., Song Aimin M.: RF characterization of unipolar nanorectifiers at zero bias. Physica Status Solidi A - Applications & Materials Science, Vol. 212, no. 9, 2015, pp. 20912097. DOI 10.1002/pssa.201532147

  23. Blanco-Filgueira B., Lopez Martinez P., Roldan Aranda J.B., Hauer J.: Analytical Model for Crosstalk in p-nwell Photodiodes. IEEE Trans on ED, Vol. 62, no. 2, 2015, pp. 580 586. DOI 10.1109/TED.2014.2375345

  24. Zhang Jiawei, Zhang Linqing, Ma Xiaochen, et al.: Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. Applied Physics Letters, Vol. 107, no. 9, 2015, Article # 093505. DOI 10.1063/1.4930019

  25. Del Vecchio P., Curutchet A., Deshayes Y., et al.: Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. Microelectronics Reliability, Vol. 55, no. 9-10, 2015, pp. 17411745. DOI 10.1016/j.microrel.2015.06.041

  26. Bochkareva N.I., Ivanov A.M., Klochkov A.V., et al.: Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs. Semiconductors, Vol. 49, no. 6, 2015, pp. 827835. DOI 10.1134/S1063782615060056

  27. Ciura L., Kolek A., Wrobel J., et al.: 1/f Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber. IEEE Trans on ED, Vol. 62, no. 6, 2015, pp. 2022 2026. DOI 10.1109/TED.2015.2423555

  28. Rocha P.R.F., Gomes H.L., Asadi K., et al.: Sudden death of organic light-emitting diodes. Organic Electronics, Vol. 20, 2015, pp. 89 96. DOI 10.1016/j.orgel.2015.02.009

  29. Khondkaryan H.D., Gasparyan F.V.: Low-frequency noises in the metal-semiconductor contact. J. of Contemporary Physics - Armenian Academy of Sciences, Vol. 50, no. 2, 2015, pp. 170 176. DOI 10.3103/S1068337215020103

  30. Djidjou T.K., Chen Ying, Basel Tek, et al.: Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes. J. of Applied Physics, Vol. 117, no. 11, 2015, Article # 115501. DOI 10.1063/1.4914519

  31. Ke Lin, Liu Hongwei, Yang Mingfei, et al.: Degradation analysis of Alq(3)-based OLED from noise fluctuations with different driving modes. Chemical Physics Lett., Vol. 623, 2015, pp. 68 71. DOI 10.1016/j.cplett.2015.01.0147

  32. Westlund A., Sangare P., Ducournau G., et al.: Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors. Solid-State Electronics, Vol. 104, 2015, pp. 7985. DOI 10.1016/j.sse.2014.11.014

  33. Garcia-Perez O., Sanchez-Martin H., Mateos J., et al.: Shot-noise suppression effects in In GaAs planar diodes at room temperature. 19th Int. Conf on Electron Dynamics in Semicond., Optoelectronics & Nanostructures (EDISON), Journal of Physics Conf. Series, Vol. 647, 2015, Article # UNSP 012061. DOI 10.1088/1742-6596/647/1/012061

  34. Yuan Xibo, Walder S., Oswald N.: EMI Generation Characteristics of SiC and Si Diodes: Influence of Reverse-Recovery Characteristics. IEEE Trans on Power Electronics, Vol. 30, no. 3, 2015, pp. 1131 – 1136. DOI 10.1109/TPEL.2014.2340404

  35. Tosi A., Calandri N., Sanzaro M., Acerbi F.: Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 20, no. 6, 2014, Article # 3803406. DOI 10.1109/JSTQE.2014.2328440

  36. Young Sheng-Joue: Photoconductive Gain and Noise Properties of ZnO Nanorods Schottky Barrier Photodiodes. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 20, no. 6, 2014, Article # 3801204. DOI 10.1109/JSTQE.2014.2316599

  37. Huang Xing, Li Xue, Shi Ming, et al.: The 1/f noise characteristics of In0.83Ga0.17As photodiodes with SiNx passivation films fabricated by two different techniques. Infrared Physics & Technology, Vol. 67, 2014, pp. 596599. DOI 10.1016/j.infrared.2014.10.008

  38. Sun Wenlu, Zheng Xiaoguang, Campbell J.C.: Study of Excess Noise Factor Under Nonlocal Effect in Avalanche Photodiodes. IEEE Photonics Technology Lett., Vol. 26, no. 21, 2014, pp. 21502153. DOI 10.1109/LPT.2014.2348914

  39. Garcia-Perez O., Alimi Y., Song A., et al.: Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes. Applied Physics Letters, Vol. 105, no. 11, 2014, Article # 113502. DOI 10.1063/1.4896050

  40. Djidjou T.K., Bevans D.A., Li S., Rogachev A.: Observation of Shot Noise in Phosphorescent Organic Light-Emitting Diodes. IEEE Trans on ED, Vol. 61, no. 9, 2014, pp. 32523257. DOI 10.1109/TED.2014.2339856

  41. Akbari M.H., Jalali M.: Noise Equivalent Circuit Model of Thin Avalanche Photodiodes. IEEE ED Lett., Vol. 35, no. 6, 2014, pp. 648650. DOI 10.1109/LED.2014.2319207

  42. Pancheri L., Dalla Betta G.-F., Stoppa D.: Low-Noise Avalanche Photodiode With Graded Junction in 0.15-mm CMOS Technology. IEEE ED Lett., Vol. 35, no. 5, 2014, pp. 566568. DOI 10.1109/LED.2014.2312751

  43. A.V. Klyuev, E.I. Shmelev, A.V. Yakimov: Physical Origins of 1/f Noise in Si δ-Doped Schottky Diodes. Fluct. Noise Lett., Vol. 13, no. 1, 2014, Article # 1450003. DOI 10.1142/S0219477514500035

  44. Jiang Rong, Yan Dawei, Lu Hai, et al.: Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes. Chinese Science Bulletin, Vol. 59, no. 12, 2014, pp. 12761279. DOI 10.1007/s11434-014-0152-6

  45. E.I. Shabunina, M.E. Levinshtein, N.M. Shmidt, P.A. Ivanov, J.W. Palmour: 1/f noise in forward biased high voltage 4H-SiC Schottky diodes. Solid-State Electronics, Vol. 96, 2014, pp. 44 – 47. DOI 10.1016/j.sse.2014.03.008

  46. A.E. Chernyakov, M.E. Levinshtein, N.A. Talnishnikh, E.I. Shabunina, N.M. Shmidt: Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs. Journal of Crystal Growth, Vol. 401, 2014, pp. 302 – 304. DOI 10.1016/j.jcrysgro.2013.11.097

  47. Papež V., Hájek J., Kojecký B.: Influence of surface states on the reverse and noise properties of silicon power diodes. IET Circuits, Devices & Systems, Vol. 8, no. 3, 2014, pp. 213 – 220 DOI 10.1049/iet-cds.2013.0219

  48. Wang To-Po: Minimized Device Junction Leakage Current at Forward-Bias Body and Applications for Low-Voltage Quadruple-Stacked Common-Gate Amplifier. IEEE Trans on ED, Vol. 61, no. 5, 2014, pp. 1231 – 1236. DOI 10.1109/TED.2014.2309682

  49. Xu X., Cao Y.Q., Lu P., Xu J., Li W., Chen K.J.: Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction. IEEE Photonics Journal, Vol. 6, no. 1, 2014, pp. 1 – 7. DOI 10.1109/JPHOT.2013.2295467

  50. V. Palenskis, J. Matukas, J. Vyšniauskas, S. Pralgauskaitė, H. Shtrikman, D. Seliuta, I. Kašalynas, G. Valušis: Analysis of Noise Characteristics of GaAs Tunnel Diodes. Fluct. Noise Lett., Vol. 12, no. 3, 2013, Article # 1350014. DOI 10.1142/S0219477513500144

  51. N. Shmidt, A. Greshnov, A. Chernyakov, M. Levinshtein, A. Zakgeim, E. Shabunina: Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs. Physica Status Solidi (c), Vol. 10, no. 3, 2013, pp. 332 – 334. DOI 10.1002/pssc.201200657

  52. A.L. Zakheim, M.E. Levinshtein, V.P. Petrov, A.E. Chernyakov, E.I. Shabunina, N.M. Shmidt: Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs. Semiconductors, Vol. 46, no. 2, 2012, pp. 208 – 212. DOI 10.1134/S106378261202025X

  53. Chernyakov A. E., Levinshtein M. E., Petrov P, V, Shmidt N. M., Shabunina E. I., Zakheim A. L.: Failure mechanisms in blue InGaN/GaN LEDs for high power operation. Microelectronics Reliability, Vol. 52, no. 9-10, 2012, pp. 2180 – 2183. DOI 10.1016/j.microrel.2012.06.051

  54. Pralgauskaite S., Palenskis V., Matukas J., Seliuta D., Kasalynas I., Valusis G.: White noise peculiarities in diode structures. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578988

  55. Meng L., Street A.G., Phang J.C.H., Bhatia C.S.: Single contact electron beam induced current technique for solar cell characterization. 39th IEEE Photovoltaic Specialists Conf. (PVSC), 2013, pp. 0951 – 0955. DOI 10.1109/PVSC.2013.6744299

  56. Klyuev A.V., Shmelev E.I., Yakimov A.V.: 1/f noise in TiAu/SiO2/GaAs Schottky diodes. 22nd Int. Conf on Noise and Fluctuations (ICNF), 2013, pp. 1 – 4. DOI 10.1109/ICNF.2013.6578990

  57. Yan L., Krozer V., Michaelsen R., Djurhuus T., Johansen T.K.: Physical based Schottky barrier diode modeling for THz applications. IEEE Int. Wireless Symp. (IWS), 2013, pp. 1 – 4. DOI 10.1109/IEEE-IWS.2013.6616741

  58. Abe Kenichi, Fujisawa Takafumi, Suzuki H., Watabe Shunichi, Kuroda R., Sugawa S., Teramoto Akinobu, Ohmi T.: A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and its Noise. IEEE Trans on Semiconductor Manufacturing, Vol. 25, no. 3, 2012, pp. 303 – 309. DOI 10.1109/TSM.2012.2202751

  59. Dalla Mora A., Contini D., Pifferi A., Cubeddu R., Tosi A., Zappa F.: Afterpulse-like noise limits dynamic range in time-gated applications of thin-junction silicon single-photon avalanche diode. Applied Physics Letters, Vol. 100, no. 24, 2012, pp. 241111 – 241111-4. DOI 10.1063/1.4729389

  60. Trabert J.F., Blau K.: Dynamic range of a P-I-n-diodes based SP4T switch-IC for broadband Ka-band satellite communication applications. 7th German Microwave Conference (GeMiC), 2012, pp. 1 – 4. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6185218&isnumber=6185137

  61. Lunak M., Chobola Z., Vanek J., Hulicius E.: Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy. 28th Int. Conf on Microelectronics (MIEL), 2012, pp. 343 – 346. DOI 10.1109/MIEL.2012.6222870

  62. Yanbin An, Hemant Rao, Gijs Bosman, Ant Ural: Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions. Appl. Phys. Lett., Vol. 100, no 21, 2012, pp 213102 (4 pages) http://dx.doi.org/10.1063/1.4719094

  63. Sobis P.J., Wadefalk N., Emrich A., Stake J.: A Broadband, Low Noise, Integrated 340 GHz Schottky Diode Receiver. IEEE Microwave and Wireless Comp. Letters, Vol. 22, no 7, 2012, pp 366 – 368. DOI 10.1109/LMWC.2012.2202280

  64. Donati S.: Responsivity and Noise of Self-Mixing Photodetection Schemes. IEEE Journal of Quantum Electronics, Vol. 47, no. 11, 2011, pp. 1428 – 1433. DOI 10.1109/JQE.2011.2169653

  65. Ze Zhang, Rajavel R., Deelman P., Fay P.: Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 pW/Hz1/2 Noise Equivalent Power. IEEE Microwave & Wireless Comp. Lett., Vol. 21, no. 5, 2011, pp. 267 – 269. DOI 10.1109/LMWC.2011.2123878

  66. Balocco C., Kasjoo S.R., ZhangL.Q., Alimi Y., Winnerl S., Song A.M.: Planar terahertz nanodevices. European Microwave Integrated Circuits Conf (EuMIC), 2011, pp. 585 – 588. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6102937&isnumber=6102757

  67. Anti M., Acerbi F., Tosi A., Zappa F.: Integrated simulator for single photon avalanche diodes. 11th Int. Conf on Numerical Simulation of Optoelectronic Devices (NUSOD), 2011, pp. 47 – 48. DOI 10.1109/NUSOD.2011.6041130

  68. Pancheri L., Stoppa D.: Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology. Proc. of the European Solid-State Device Research Conf (ESSDERC), 2011, pp. 179 – 182. DOI 10.1109/ESSDERC.2011.6044205

  69. Jungjin Park, Taewook Kang, Daeyoung Woo, Joong-Kon Son, Jong-Ho Lee, Park Byung-Gook, Hyungcheol Shin: Non-ideal characteristic analysis of GaN-based light-emitting diode using current-voltage (I–V) and low-frequency noise experiment. 18th IEEE Int. Symp on the Physical & Failure Analysis of Integrated Circuits (IPFA), 2011, pp. 1 – 4. DOI 10.1109/IPFA.2011.5992713

  70. Rumyantsev S.L., Levinshtein M.E., Shur M.S., Palmour J.W., Agarwal A.K., Das M.K.: Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions. 21st Int. Conf on Noise and Fluctuations (ICNF), 2011, pp. 100 – 101. DOI 10.1109/ICNF.2011.5994272

  71. Szewczyk A., Cichosz J.: Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 440 – 443. DOI 10.1109/ICNF.2011.5994365

  72. Klyuev A.V., Shmelev E.I., Yakimov A.V.: Sources of 1/f noise in Si delta-doped Schottky diodes. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 102 – 105. DOI 10.1109/ICNF.2011.5994273

  73. Mateos J., Iniguez-de-la-Torre I., Gonzalez T.: Noise and Terahertz rectification in semiconductor diodes and transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 16 – 21. DOI 10.1109/ICNF.2011.5994291

  74. Mahi F.Z., Varani L., Shiktorov P., Starikov E., Gruzhinskis V.: High-frequency voltage noise of nanometric Schottky-barrier diodes and heterostructure barrier varactor in cyclostationary conditions. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 216 – 219. DOI 10.1109/ICNF.2011.5994304

  75. Pardo D., Perez S., Grajal J., Mateos J., Gonzalez T.: Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 106 – 109. DOI 10.1109/ICNF.2011.5994274

  76. Leung K.K., Fong W.K., Surya C.: Low-frequency noise in GaN diodes. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 291 – 296. DOI 10.1109/ICNF.2011.5994325

  77. Rumyantsev S.L., Levinshtein M.E., Shur M.S., Palmour J.W., Agarwal A.K., Das M.K.: Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 100 – 101. DOI 10.1109/ICNF.2011.5994272

  78. Mori Yuki; Takeda Kenichi, Yamada Ren-ichi: Random telegraph noise of junction leakage current in submicron devices. Journal of Applied Physics, vol. 107, no. 1, 2010, pp. 014509 – 014509-10. DOI 10.1063/1.3268479

  79. Karami M. A., Carrara L., Niclass C., Fishburn M., Charbon E.: RTS Noise Characterization in Single-Photon Avalanche Diodes. IEEE ED Letters, vol. 31, no. 7, 2010, pp. 692 – 694. DOI 10.1109/LED.2010.2047234

  80. Rumyantsev S.L., Levinshtein M.E., Shur M.S., Palmour J.W., Agarwal A.K., Das M.K.: Effect of forward current stress on low frequency noise in 4H–SiC p-n junctions. Journal of Applied Physics, Vol. 108, no. 2, 2010, pp. 024508 – 024508-5. DOI 10.1063/1.3457789

  81. Pau J.L., Piqueras J., Rogers D.J., Hosseini Teherani F., Minder K., McClintock R., Razeghi M.: On the interface properties of ZnO/Si electroluminescent diodes. Journal of Applied Physics, Vol. 107, no. 3, 2010, pp. 033719 – 033719-7. DOI 10.1063/1.3305530

  82. An Chen, Woodall J.M.: Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P. Applied Physics Letters, Vol. 94, no. 2, 2009, pp. 021102 – 021102-3. DOI 10.1063/1.3069282

  83. Merchant C.A., Markovic N.: Current and shot noise measurements in a carbon nanotube-based spin diode. Journal of Applied Physics, Vol. 105, no. 7, 2009, pp. 07C711 – 07C711-4. DOI 10.1063/1.3072020

  84. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González: Monte Carlo analysis of noise spectra in self-switching nanodiodes. J. of Appl. Physics, Vol. 103, no. 2, 2008, pp. 024502-1 – 024502-6. DOI: 10.1063/1.2832505

  85. A.P. Dmitriev, M.E. Levinshtein, E.N. Kolesnikova, J.W. Palmour, M.K. Das, B.A. Hull: A model of the 1/f noise in a forward-biased p-n diode. Semicond. Science Technology, Vol. 23, no. 1, 2008, Article # 015011. DOI 10.1088/0268-1242/23/1/015011

  86. Loshitskyi P.P., Pavlyuchenko A.V.: The research of avalanche diode noise generation in anomaly mode. 18th Int. Crimean Conf on Microwave & Telecom. Technology (CriMiCo), 2008, pp 100 – 102. DOI 10.1109/CRMICO.2008.4676306

  87. Schulman J.N., Hsu T.Y., Moyer H.P., Lynch J.J.: 1/f Noise of Sb-Heterostructure Diodes for Pre-Amplified Detection. IEEE Microwave and Wireless Components Letters, Vol. 17, no 5, 2007, pp 355 – 357. DOI 10.1109/LMWC.2007.895707

  88. Dobrzanski L., Strupinski W.: On Charge Transport and Low-Frequency Noise in the GaN p-i-n Diode. IEEE Journal of Quantum Electronics, Vol. 43, no 2, 2007, pp 188 – 195. DOI 10.1109/JQE.2006.889052

  89. L.A. Kosyachenko, V.M. Sklyarchuk, O.F. Sklyarchuk, V.A. Gnatyuk: Features of generation-recombination processes in CdTe-based Schottky diodes. Semicond. Sci. Techn., Vol. 22, no. 8, 2007, pp. 911 – 918. DOI 10.1088/0268-1242/22/8/015

  90. J.L. Hesler, T.W. Crowe: Responsivity and Noise Measurements of Zero-Bias Schottky Diode Detectors. 18th Intl. Symp. Space Terahertz Techn., Pasadena, March 2007. http://virginiadiodes.com/VDI/pdf/VDI%20Detector%20Char%20ISSTT2007.pdf

  91. P Shiktorov, E. Starikov, V. Gruzinskis, S. Perez, T. Gonzalez, L. Reggiani, L. Varani, J.C. Vaissiere: Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits. Semicond. Sci. Technol., Vol. 21, 2006, pp 550 – 557. DOI 10.1088/0268-1242/21/4/023

  92. S.L. Rumyantsev, A.P. Dmitriev, M.E. Levinshtein, D. Veksler, M.S. Shur, J.W. Palmour, M.K. Das, B.A. Hull: Generation-recombination noise in forward-biased 4H-SiC p-n diode. J. Appl. Phys., Vol. 100, no. 6, 2006, Article # 064505. DOI 10.1117/12.723444

  93. Malyshev V.M., Borodin A.M.: Computer Modeling of Shottky Diodes Low-Frequency Noise at Direct Current Bias and in a Mode of Detecting VHF Carrier. Int. Conf. on Actual Problems of Electron Devices Eng., 2006, pp 148 – 160. DOI 10.1109/APEDE.2006.307402

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