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NOISE in CARBON NANOTUBE DEVICES

The world is either the effect of cause or chance. If the latter, it is a world for all that,

that is to say, it is a regular and beautiful structure.”

Marcus Aurelius

  1. Martin Landauer Gerhard, Luis Gonzalez Jose: Radio-Frequency Performance of Carbon Nanotube-Based Devices and Circuits Considering Noise and Process Variation. IEEE Trans on Nanotechnology, Vol. 13, no. 2, 2014, pp. 228237. DOI 10.1109/TNANO.2014.2298094

  2. Sydoruk V. A., Goss K., Meyer C., Petrychuk M. V., Danilchenko B. A., Weber P., Stampfer C., Li J., Vitusevich, S. A.: Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation. Nanotechnology, Vol. 25, no. 3, Article # 035703, 2014, DOI 10.1088/0957-4484/25/3/035703

  3. Hossain Z. Md., Rumyantsev S., Shur M.S., Balandin A.A: Reduction of 1/f noise in graphene after electron-beam irradiation. Applied Physics Letters, Vol. 102, no. 15, 2013, Article # 153512. DOI 10.1063/1.4802759

  4. Rengel R., Martín M. J.: Diffusion coefficient, correlation function and power spectral density of velocity fluctuations in monolayer graphene. Journal of Applied Physics, Vol. 114, no. 14, 2013, pp 143702 – 143702-9. DOI 10.1063/1.4824182

  5. Subash S, Kolar J, Chowdhury M.: A New Spatially Rearranged Bundle of Mixed Carbon Nanotubes as VLSI Interconnection. IEEE Trans. on Nanotechnology, Vol. 12, no. 1, 2013, pp 3 – 12. DOI 10.1109/TNAno. 2011.2159014

  6. Huang Huaping, Liu De, Zhang Hongmei, Kong Xiaojun: Electronic transport and shot noise in Thue-Morse sequence graphene superlattice. Journal of Applied Physics, Vol. 113, no. 4, 2013, pp 043702 – 043702-6. DOI 10.1063/1.4788676

  7. Zhuang Jia Ning, Wang Jian: Conductance fluctuation and shot noise in disordered graphene systems, a perturbation expansion approach. Journal of Applied Physics, Vol. 114, no. 6, 2013, pp. 063708 – 063708-8. DOI 10.1063/1.4817885

  8. V. A. Sydoruk, M. V. Petrychuk, A. Ural, G. Bosman, A. Offenhäusser, S. A. Vitusevich : Noise spectroscopy of transport properties in carbon nanotube field-effect transistors. Carbon, Vol. 53, 2013, pp. 252 – 259. DOI 10.1016/j.carbon.2012.10.056

  9. V. A. Sydoruk, M. V. Petrychuk, A. Ural, G. Bosman, A. Offenhäusser, S. A. Vitusevich : Noise spectroscopy of transport properties in carbon nanotube field-effect transistors. Carbon, Vol. 53, 2013, pp. 252 – 259. DOI 10.1016/j.carbon.2012.10.056

  10. Kawahara T., Yamaguchi S., Ohno Y., Maehashi K., Matsumoto K., Mizutani S., Itaka K.: Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy. Applied Surface Science, Vol. 267, Feb. 15 2013, pp. 101 – 105. DOI 10.1016/j.apsusc.2012.08.003

  11. Sharf T., Kevek J. W., DeBorde T., Jenna L. Wardini, Ethan D. Minot  : Origins of Charge Noise in Carbon Nanotube Field-Effect Transistor Biosensors. NANO Lett.  Vol. 12, no. 12, 2012, pp. 6380 – 6384. DOI 10.1021/nl303651t

  12. Kawahara T., Yamaguchi S., Ohno Y., Maehashi K., Matsumoto K., Mizutani S., Itaka K.: Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy. Applied Surface Science, Vol. 267, Feb. 15 2013, pp. 101 – 105. DOI 10.1016/j.apsusc.2012.08.003

  13. Kim Chur, Jung Kwangyun, Kieu Khanh, Jungwon Kim: Low timing jitter and intensity noise from a soliton Er-fiber laser mode-locked by a fiber taper carbon nanotube saturable absorber. Optics Express, Vol. 20, no. 28, 2012, pp. 29524 – 29530. DOI 10.1364/OE.20.029524

  14. Sassine G., Martinez F., El Khoury M., Pascal F., Hoffmann A.: Measurements and Simulations of Surfactant's Impact on the Conductivity and the 1/f Noise in Percolation Carbon Nanotube Networks. IEEE Trans on ED, Vol. 59, no. 10, 2012,  pp. 2803 – 2808. DOI 10.1109/TED.2012.2210046

  15. Lovat G.: Equivalent Circuit for Electromagnetic Interaction and Transmission Through Graphene Sheets. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 101 – 109. DOI 10.1109/TEMC.2011.2169072

  16. D'Amore M., D'Aloia A.G., Sarto M.S., Tamburrano A.: Near Field Radiated From Carbon Nanotube Bundles. IEEE Trans on EMC, Vol. 54, no. 5, 2012, pp. 998 – 1005. DOI 10.1109/TEMC.2012.2196045

  17. Jin-Bong Kim, Joon-Hyung Byun: Salisbury Screen Absorbers of Dielectric Lossy Sheets of Carbon Nanocomposite Laminates. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 37 – 42. DOI 10.1109/TEMC.2011.2172983

  18. Stievano I.S., Manfredi P., Canavero F.G.: Carbon Nanotube Interconnects: Process Variation via Polynomial Chaos. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 140 – 148. DOI 10.1109/TEMC.2011.2171490

  19. Quiévy, N., Bollen P., Thomassin J., Detrembleur C., Pardoen T., Bailly C., Huynen I.: Electromagnetic Absorption Properties of Carbon Nanotube Nanocomposite Foam Filling Honeycomb Waveguide Structures. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 43 – 51. DOI 10.1109/TEMC.2011.2179928

  20. Jiang-Peng Cui, Wen-Sheng Zhao, Wen-Yan Yin, Jun Hu: Signal Transmission Analysis of Multilayer Graphene Nano-Ribbon (MLGNR) Interconnects. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 126 – 132. DOI 10.1109/TEMC.2011.2172947

  21. Wen-Sheng Zhao, Wen-Yan Yin, Yong-Xin Guo: Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 149 – 157. DOI 10.1109/TEMC.2011.2167336

  22. Chiariello A.G., Maffucci A., Miano G.: Electrical Modeling of Carbon Nanotube Vias. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 158 – 166. DOI 10.1109/TEMC.2011.2180024

  23. Maehashi K., Kishimoto T., Ohno Y., Inoue K., Matsumoto K.: Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 30, no. 3, 2012, pp. 03D108 – 03D108-4. DOI 10.1116/1.3697527

  24. Gulbahar B., Akan O.B.: A Communication Theoretical Modeling of Single-Walled Carbon Nanotube Optical Nanoreceivers and Broadcast Power Allocation. IEEE Trans on Nanotechnology, Vol. 11, no. 2, 2012, pp. 395 – 405. DOI 10.1109/TNANO.2011.2177500

  25. Bartsch S. T., Rusu A., Ionescu A. M.: Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor. Applied Physics Letters, Vol. 101, no. 15, 2012, pp. 153116 – 153116-5. DOI 10.1063/1.4758991

  26. Landauer G. M., Gonzalez J. L.: Carbon nanotube FET process variability and noise model for radiofrequency investigations. IEEE Conf. on Nanotechnology (IEEE-NANO), 2012, pp. 1 – 5. DOI 10.1109/NANO.2012.6321963

  27. Pribat D., Bondavalli P.: Thin-Film Transistors and Circuits Based on Carbon Nanotubes. Journal of Display Technology, Vol. 8, no. 1, 2012, pp. 54 – 60. DOI 10.1109/JDT.2011.2162817

  28. Liu Guanxiong, Rumyantsev S., Shur M., Balandin A. A. : Graphene thickness-graded transistors with reduced electronic noise. Applied Physics Letters , Vol. 100, no. 3, 2012, pp. 033103 – 033103-3. DOI 10.1063/1.3676277

  29. Moon J. S., Antcliffe M., Seo H. C., Lin S. C., Schmitz A., Milosavljevic I., McCalla K., Wong D., Gaskill D. K., Campbell P. M., Lee K.-M., Asbeck P.: Graphene review: An emerging RF technology. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012, pp. 199 – 202. DOI 10.1109/SiRF.2012.6160170

  30. Majumder M.K., Pandya N.D., Kaushik B.K., Manhas S.K.: Dynamic crosstalk effect in mixed CNT bundle interconnects. Electronics Lett., Vol. 48, no. 7, 2012, pp. 384 – 385. DOI 10.1049/el.2012.0536

  31. Yanbin An, H. Rao, G. Bosman, Ant Ural : Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions. Appl. Phys. Lett., Vol. 100, no 21, 2012, pp 213102 (4 pages) http://dx.doi.org/10.1063/1.4719094

  32. Sun S., Ang L. K.: Shot noise of low energy electron field emission due to Klein tunneling. Journal of Applied Physics, Vol. 112, no. 1, 2012, pp. 016104 – 016104-3. DOI 10.1063/1.4733349

  33. Hakamata Y., Ohno Y., Maehashi K., Koichi Inoue, Kazuhiko Matsumoto : Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks. Japanese Journal of Applied Physics, Vol. 50, no. 6, 2011, Special Issue SI, Article # 06GE03, Part 2 DOI 10.1143/JJAP.50.06GE03

  34. Stadler A. Witold, Zawislak Zbigniew, Sloma Marcin, Jakubowska M.: Noise properties of CNT-based polymer resistors. (polish) Przeglad Elektrotechniczny, Vol. 87, no. 10, 2011, pp. 52 – 55.

  35. Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto: External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor. Applied Phys. Express, Vol. 4, no. 4, 2011, DOI 10.1143/APEX.4.045102

  36. Ferranti F., Antonini G., Dhaene T., Knockaert L., Orlandi A.: Compact and Accurate Models of Large Single-Wall Carbon-Nanotube Interconnects. IEEE Trans on EMC, Vol. 53, no. 4, 2011, pp. 1025 – 1033. DOI 10.1109/TEMC.2011.2159207

  37. Pable S.D., Hasan M., Kafeel M.A.: Performance Analysis of Ultra Low-Power Mixed CNT Interconnects for Scaled Technology. Int. Symp. on Electronic System Design (ISED), 2011, pp. 285 – 289. DOI 10.1109/ISED.2011.74

  38. Wen-Yan Yin, Wen-Sheng Zhao: Modeling of carbon nanotube (CNT) interconnects. 15th IEEE Workshop on Signal Propagation on Interconnects (SPI), 2011, pp. 79 – 82. DOI 10.1109/SPI.2011.5898845

  39. S. Krompiewski : Electronic transport through side-contacted graphene nanoribbons: effects of overlap, aspect ratio and orientation. Nanotechnology, Vol. 22, no 44, 2011, pp 445201 (6 pages) doi:10.1088/0957-4484/22/44/445201

  40. A. D. Franklin, S.-J. Han, A. A. Bol, W. Haensch : Effects of nanoscale contacts to graphene. IEEE Electron Device Lett., Vol. 32, no. 8, pp. 1035–1037, 2011. DOI 10.1109/LED.2011.2158058

  41. J. S. Moon, D. Curtis, D. Zehnder, S. Kim, D. K. Gaskill, G. G. Jernigan, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, K.-M. Lee, P. Asbeck : Low-phase-noise graphene FETs in ambipolar RF applications. IEEE Electron Device Lett., Vol. 32, no. 3, pp. 270 – 272, Mar. 2011. DOI 10.1109/LED.2010.2100074

  42. Moon Gyu Sung, Hyungwoo Lee, Kwang Heo, Kyung-Eun Byun, Taekyeong Kim, David H. Seo, Sunae Seo, Seunghun Hong : Scanning Noise Microscopy on Graphene Devices. ACS Nano, Vol. 5, no 11, 2011, pp 8620 – 8628. DOI 10.1021/nn202135g

  43. Yan Zhang, Emilio E. Mendez, Xu Du : Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors. ACS Nano, Vol. 5, no 10, 2011, pp 8124 – 8130. DOI 10.1021/nn202749z

  44. Atindra Nath Pal, Subhamoy Ghatak, Vidya Kochat, E. S. Sneha, Arjun Sampathkumar, Srinivasan Raghavan, Arindam Ghosh : Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion. ACS Nano, Vol. 5, no 3, 2011, pp 2075 – 2081. DOI 10.1021/nn103273n

  45. Rui Zhu, Maoli Lai : Pumped shot noise in adiabatically modulated graphene-based double-barrier structures. J. Phys.: Condens. Matter, Vol. 23, no 45, 2011, pp. 455302 (7 pages). Doi:10.1088/0953-8984/23/45/455302

  46. Yu-Xian Li, Long-Fei Xu : Shot noise suppression in a series graphene tunnel barrier structure. Solid State Communications, Vol. 151, no 3, 2011, pp. 219 – 222. DOI 10.1016/j.ssc.2010.11.029

  47. Xiao-Xiao Guo, De Liu, and Yu-Xian Li : Conductance and shot noise in graphene superlattice. Applied Physics Letters, Vol. 98, no 24, 2011, pp 242101 (3 pages) DOI 10.1063/1.3599447

  48. Guo Xiao-Xiao, Liu De, Li Yu-Xian: Conductance and shot noise in graphene superlattice. Applied Physics Letters, Vol. 98, no. 24, 2011, pp. 242101 – 242101-3. DOI 10.1063/1.3599447

  49. Iannaccone G., Betti A., Fiori G.: Noise in graphene and carbon nanotube devices. 21st Int. Conf on Noise and Fluctuations (ICNF), 2011, pp. 360 – 363. DOI 10.1109/ICNF.2011.5994343

  50. Gasparyan F.V., Poghossian A., Vitusevich S. A., Petrychuk M.V., Sydoruk V.A., Siqueira J.R., Oliveira O.N., Offenhausser A., Schoning M.J.: Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon- Nanotube Multilayers. IEEE Sensors Journal, Vol. 11, no 1, 2011, pp 142 – 149. DOI 10.1109/JSEN.2010.2052355

  51. Jamal O., Naeemi A.: Ultralow-Power Single-Wall Carbon Nanotube Interconnects for Subthreshold Circuits. IEEE Trans on Nanotechnology, Vol 10, no 1, 2011, pp 99 – 101. DOI 10.1109/TNAno. 2010.2095428

  52. Sakalas P., Schroter M., Bolter M., Claus M., Mothes S., Wang D.: High frequency noise in manufacturable carbon nanotube transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 372 – 375. DOI 10.1109/ICNF.2011.5994346

  53. Liu L., Kong L., Yin W., Matitsine S. S.: Characterization of Single- and Multiwalled Carbon Nanotube Composites for Electromagnetic Shielding and Tunable Applications. IEEE Trans. on Electromagnetic Compatibility, Vol. 53, no. 4, 2011, pp. 943 – 949. DOI 10.1109/TEMC.2011.2159798

  54. Sydoruk V.A., Petrychuk M.V., Ural A., Bosman G., Offenhausser A., Vitusevich S.A.: Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 238 – 241. DOI 10.1109/ICNF.2011.5994312

  55. Iannaccone G., Betti A., Fiori G.: Noise in graphene and carbon nanotube devices. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 360 – 363. DOI 10.1109/ICNF.2011.5994343

  56. Kawahara T., Yamaguchi S., Maehashi K., Ohno Y., Matsumoto K., Mizutani S.: Gate voltage control of stochastic resonance in carbon nanotube field effect transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 364 – 367. DOI 10.1109/ICNF.2011.5994344

  57. Joo Min-Kyu, Kang Pilsoo, Kim Yongha, Kim Gyu-Tae, Kim Sangtae: A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices. Review of Scientific Instruments, Vol. 82, no. 3, 2011, pp. 034702 – 034702-5. DOI 10.1063/1.3553208

  58. Wei Wang, Zhiyuan Yu, Ken Choi: High SNM 6T CNFET SRAM cell design considering nanotube diameter and transistor ratio. IEEE Int. Conf. on Electro/Information Technology (EIT), 2011, pp. 1 – 4. DOI 10.1109/EIT.2011.5978618

  59. Yang Xuebei, Liu Guanxiong, Balandin A. A., Mohanram Kartik: Triple-Mode Single-Transistor Graphene Amplifier and Its Applications. ACS Nano, Vol. 4, no. 10, 2010, pp. 55325538. DOI 10.1021/nn1021583

  60. Wei Lin, Rongwei Zhang, Kyoung-Sik Moon, Wong C.P.: Synthesis of High-Quality Vertically Aligned Carbon Nanotubes on Bulk Copper Substrate for Thermal Management. IEEE Trans. on Advanced Packaging, Vol. 33, no. 2, 2010, pp 370 – 376. DOI 10.1109/TADVP.2009.2034335

  61. Hakamata Y., Ohno Y., Maehashi K., Inoue K., Matsumoto K.: Improving faint-signal sensitivity of electrolyte-gated carbon nanotube field-effect transistors using external noise. IEEE Nanotechnology Materials and Devices Conf. (NMDC), 2010, pp. 10 – 13. DOI 10.1109/NMDC.2010.5652537

  62. Gasparyan F.: Low-Frequency Noises in Nanotubes and Nanowires. Armenian Journal of Physics, Vol. 3, no. 4, 2010, pp. 312 – 341. http://ajp.asj-oa.am/306/1/05-Gasparyan.pdf

  63. Toshio Kawahara, Satarou Yamaguchi, Kenzo Maehashi, Yasuhide Ohno, Kazuhiko Matsumoto, Tomoji Kawai: Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors. Japanese Journal of Applied Physics, Vol. 49, no. 2S, 2010, Article # 02BD11. DOI 10.1143/JJAP.49.02BD11

  64. Sunkook Kim, Seongmin Kim, David B. Janes, Saeed Mohammadi, Juhee Back, Moonsub Shim: DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology, Vol. 21, no. 38,  2010, Article # 385203. DOI 10.1088/0957-4484/21/38/385203

  65. Behnam Ashkan, Biswas Amlan, Bosman Gijs, Ural Ant: Temperature-dependent transport and 1/f noise mechanisms in single-walled carbon nanotube films. Phys. Rev. B, Vol. 81, no. 12,  2010, Article # 125407. DOI 10.1103/PhysRevB.81.125407

  66. Rasekh M., Khadem S. E., Tatari M. : Noise Immunity of Carbon Nanotube Based Switches. Proc. 10th ASME Biennial Conf. on Engineering Systems Design and Analysis (ESDA), 2010, Vol. 5, pp. 681 – 689. DOI 10.1115/ESDA2010-25162 http://proceedings.asmedigitalcollection.asme.org/proceeding.aspx?articleid=1618450

  67. Chan Jack, Kidd D., Burke B., Harriott L, Williams K.: Noise analysis of carbon nanotube field effect transistors irradiated by electron beam. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 28, no. 6, 2010, pp. C6P66 – C6P69. DOI 10.1116/1.3517517

  68. Betti A., Fiori G., Iannaccone G.: Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction. Int. Workshop on Computational Electronics (IWCE), 2010, pp. 1 – 4. DOI 10.1109/IWCE.2010.5677956

  69. Hakamata Y., Ohno Y., Maehashi K., Inoue K., Matsumoto K., Kasai S., Inoue K., Matsumoto K.: Enhancement of weak-signal response based on stochastic resonance in carbon nanotube field-effect transistors. Journal of Applied Physics, Vol. 108, no. 10, 2010, pp. 104313 – 104313-4. DOI 10.1063/1.3514540

  70. Iannaccone G., Betti A., Fiori G.: Transport and noise properties of graphene-based transistors revealed through atomistic modelling. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2010, pp. 3 – 6. DOI 10.1109/SISPAD.2010.5604587

  71. Guangyu Xu, Carlos M. Torres, Jr., Emil B. Song, Jianshi Tang, Jingwei Bai, Xiangfeng Duan, Yuegang Zhang, Kang L. Wang : Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons. Nano Lett., Vol. 10, no. 11, 2010, pp 4590 – 4594. DOI 10.1021/nl1025979

  72. Yositake Takane : Nonuniversal Shot Noise in Disordered Quantum Wires with Channel-Number Imbalance. J. Phys. Soc. Jpn., Vol. 79, 2010, pp. 104706 (4 pages) DOI 10.1143/JPSJ.79.104706

  73. K.-J. Lee, M. Qazi, J. Kong, A. P. Chandrakasan : Low-swing signaling on monolithically integrated global graphene interconnects. IEEE Trans. Electron Devices, Vol. 57, no. 12, 2010, pp. 3418 – 3425. DOI 10.1109/TED.2010.2083667

  74. R. Danneau, F. Wu, M.Y. Tomi, J.B. Oostinga, A.F. Morpurgo, P.J. Hakonen : Shot Noise Suppression and Hopping Conduction in Graphene Nanoribbons. Physical Rev. B, Vol. 82, no. 16, 2010, pp 161405(R), (4 pages), DOI 10.1103/PhysRevB.82.161405

  75. Chaste J., Pallecchi E., Morfin P., Feve G., Kontos T., Berroir J.-M., Hakonen P., Placais B.: Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters, Vol. 96, no. 19, 2010, pp. 192103 – 192103-3. DOI 10.1063/1.3425889

  76. Barone C., Pagano S., Neitzert H. C.: Effect of concentration on low-frequency noise of multiwall carbon nanotubes in high-density polyethylene matrix. Applied Physics Letters, vol. 97, no. 15, 2010, pp. 152107 – 152107-3. DOI 10.1063/1.3502485

  77. D'Amore M., Sarto M. S., Tamburrano A.: Fast Transient Analysis of Next-Generation Interconnects Based on Carbon Nanotubes. IEEE Trans on EMC, Vol. 52, no 2, 2010, pp 496 – 503. DOI 10.1109/TEMC.2010.2045383

  78. Sayer R.A., Sunkook Kim, Franklin A.D., Mohammadi S., Fisher T.S.: Shot Noise Thermometry for Thermal Characterization of Templated Carbon Nanotubes. IEEE Trans. on Components and Packaging Technologies, Vol. 33, no. 1, 2010, pp. 178 – 183. DOI 10.1109/TCAPT.2009.2038488

  79. Betti A., Fiori G., Iannaccone G.: Enhanced shot noise in carbon nanotube field-effect transistors. Applied Physics Lett., Vol. 95, no 25, 2009, pp 252108 – 252108-3. DOI 10.1063/1.3274128

  80. Gong Yiyang, Guo Yong : Magnetically induced enhancement of shot noise in graphene-based structures. Journal of Applied Physics, Vol. 105, no. 6, 2009, pp. 063717 – 063717-4. DOI 10.1063/1.3103306

  81. Betti A., Fiori G., Iannaccone G.: Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors. IEEE Trans on ED, Vol. 56, no. 9, 2009, pp. 2137 – 2143. DOI 10.1109/TED.2009.2026512

  82. Pu S.-N., Yin W.-Y., Mao J.-F., Liu Q.H.: Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects. IEEE Trans on ED, Vol. 56, no. 4, 2009, pp. 560 – 568. DOI 10.1109/TED.2009.2014429

  83. Merchant C. A., Markovic N.: Current and shot noise measurements in a carbon nanotube-based spin diode. J. of Applied Physics, Vol. 105, no. 7, 2009, pp. 07C711 – 07C711-4. DOI 10.1063/1.3072020

  84. G. F. Close, H.-S. Philip Wong : Assembly and Electrical Characterization of Multiwall Carbon Nanotube Interconnects. IEEE Trans on Nanotechnology, Vol. 7, no. 5, 2008, pp. 596 – 600. DOI 10.1109/TNANO.2008.927373

  85. Behnam Ashkan, Bosman G., Ural Ant: Percolation scaling of 1/f noise in single-walled carbon nanotube films. Phys. Rev. B, Vol. 78, no. 8, 2008, Article # 085431. DOI 10.1103/PhysRevB.78.085431

  86. D. Tobias, M. Ishigami, A. Tselev, P. Barbara, E. D. Williams, C. J. Lobb, M. S. Fuhrer: Origins of 1/f noise in individual semiconducting carbon nanotube field-effect transistors. Phys. Rev. B, Vol. 77, no. 3, 2008, pp. 033407 – 033407-4. DOI 10.1103/PhysRevB.77.033407 http://www.physics.umd.edu/mfuhrer/publications/TobiasPRBv77n033407_2008.pdf

  87. R. A. Sayer, T. S. Fisher : Shot Noise Thermometry with Carbon Nanotubes. I-THERM - Intersociety Conf on Thermal Phenomena in Electronic Systems, 2008, pp. 931 – 936. DOI 10.1109/ITHERM.2008.4544367

  88. Ohno M.K., Inoue K., Matsumoto K.: Suppression of current fluctuations in carbon nanotube field-effect transistors by applying alternating current. Int. Conf. on Nanoscience and Nanotechnology (ICONN 2008), 2008, pp. 67 – 70. DOI 10.1109/ICONN.2008.4639247

  89. Y.-M. Lin, P. Avouris : Strong suppression of electrical noise in bilayer graphene nanodevices. Nano Lett., Vol. 8, no. 8, 2008, pp. 2119 – 2125. DOI 10.1021/nl080241l

  90. Lim P., Xinran Wang, Hongjie Dai, Nishi Y., Harris J.: Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress. 2008 Device Research Conference, 2008, pp. 109 – 110. DOI 10.1109/DRC.2008.4800758

  91. Lu Rongtao, Xu Guowei, Wu J. Z.: Effects of thermal annealing on noise property and temperature coefficient of resistance of single-walled carbon nanotube films. Applied Physics Letters, Vol. 93, no. 21, 2008, pp. 213101 – 213101-3. DOI 10.1063/1.3035848

  92. Xu Guangyu, Liu Fei, Han Song, Ryu Koungmin, Badmaev A., Lei Bo, Zhou Chongwu, Wang Kang L.: Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors. Applied Physics Letters, Vol. 92, no. 22, 2008, pp. 223114 – 223114-3. DOI 10.1063/1.2940590

  93. Betti A., Fiori G., Iannaccone G.: Shot noise in quasi one-dimensional FETs. IEEE Int. Electron Devices Meeting (IEDM), 2008, pp. 1 – 4. DOI 10.1109/IEDM.2008.4796648

  94. Navid R., Jungemann C., Lee T. H., Dutton R. W.: High-frequency noise in nanoscale metal oxide semiconductor field effect transistors. Journal of Applied Physics, Vol. 101, no. 12, 2007, pp. 124501 – 124501-8. DOI 10.1063/1.2740345

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