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NOISE in CARBON NANOTUBE DEVICES

The world is either the effect of cause or chance. If the latter, it is a world for all that,

that is to say, it is a regular and beautiful structure.”

Marcus Aurelius

  1. Korniyenko Y., Shevtsov O., Lofwander T.: Shot noise in a harmonically driven ballistic graphene transistor. Physical Review B, Vol. 95, no. 16, 2017, Article # 165420. DOI 10.1103/PhysRevB.95.165420

  2. Rai Mayank Kumar, Garg Harsh, Kaushik B.K.: Temperature-Dependent Modeling and Crosstalk Analysis in Mixed Carbon Nanotube Bundle Interconnects. J. of Electronic Materials, Vol. 46, no. 8, 2017, pp. 5324 – 5337. DOI 10.1007/s11664-017-5538-1

  3. Kumar Deepak, Chaturvedi Poornendu, Saho Praveen, et al.: Effect of single wall carbon nanotube networks on gas sensor response and detection limit. Sensors & Actuators B-Chemical, Vol. 240, 2017, pp. 1134 – 1140. DOI 10.1016/j.snb.2016.09.095

  4. Yue Xiaowei, Wang Kan, Yan Hao, et al.: Generalized Wavelet Shrinkage of Inline Raman Spectroscopy for Quality Monitoring of Continuous Manufacturing of Carbon Nanotube Buckypaper. IEEE Trans on Automation Science and Engineering, Vol. 14, no. 1, 2017, pp. 196 – 207. DOI 10.1109/TASE.2016.2599023

  5. Schnee M., Besson C., Frielinghaus R., et al.: Quantum transport in carbon nanotubes covalently functionalized with magnetic molecules. Physica Status Solidi B - Basic Solid State Physics, Vol. 253, no. 12, 2016, pp. 2424 – 2427. DOI 10.1002/pssb.201600292

  6. Troudi M., Bergaoui Y., Bondavalli P., et al.: Time domain analysis of traps generated random telegraph signal in (SWCNT) based sensors. Sensors & Actuators A - Physical, Vol. 252, 2016, pp. 185 – 189. DOI 10.1016/j.sna.2016.10.031

  7. Zhang Guang, Jiang Shaohui, Yao Wei, et al.: Enhancement of Natural Convection by Carbon Nanotube Films Covered Microchannel-Surface for Passive Electronic Cooling Devices. ACS Applied Materials & Interfaces, Vol. 8, no. 45, 2016, pp. 31202 – 31211. DOI 10.1021/acsami.6b08815

  8. Mehrabani Yavar Safaei, Eshghi Mohammad: Noise and Process Variation Tolerant, Low-Power, High-Speed, and Low-Energy Full Adders in CNFET Technology. IEEE Trans on VLSI Systems, Vol. 24, no. 11, 2016, pp. 3254 – 3267. DOI 10.1109/TVLSI.2016.2540071

  9. Liu Yang, Wang Sheng, Peng Lian-Mao: Toward High-Performance Carbon Nanotube Photovoltaic Devices. Advanced Energy Materials, Vol. 6, no. 17, 2016, Special Issue: SI. DOI 10.1002/aenm.201600522

  10. Najari Montassar, Makni Wafa, Samet Hekmet, et al.: Noise and Schottky Barriers Effects in Carbon Nanotube Field Effect Transistor Performances and Its Application in Analog Circuit Design. J. of Nanoelectronics & Optoelectronics, Vol. 11, no. 4, 2016, pp. 416 – 424. DOI 10.1166/jno.2016.1928

  11. Gopar Victor A.: Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point. Physica E - Low-Dimensional Systems & Nanostructures, Vol. 82, 2016, pp. 79 – 84. DOI 10.1016/j.physe.2016.02.016

  12. Parmentier F.D., Serkovic-Loli L.N., Roulleau P., et al.: Photon-Assisted Shot Noise in Graphene in the Terahertz Range. Physical Review Lett., Vol. 116, no. 22, 2016, Article # 227401. DOI 10.1103/PhysRevLett.116.227401

  13. Pander Adam, Hatta Akimitsu, Furuta Hiroshi: Optimization of catalyst formation conditions for synthesis of carbon nanotubes using Taguchi method. Applied Surface Science, Vol. 371, 2016, pp. 425 – 435. DOI 10.1016/j.apsusc.2016.02.216

  14. Zhang Jian, Zhao Hong-Kang, Wang Qing: Shot noise in a toroidal carbon nanotube coupled with Majorana fermion states. Physics Lett. A, Vol. 380, no. 14-15, 2016, pp. 1378 – 1384. DOI 10.1016/j.physleta.2016.01.055

  15. Liu Che-Hung, Chen Qi, Liu Chang-Hua, et al.: Graphene Ambipolar Nanoelectronics for High Noise Rejection Amplification. NANO Lett., Vol. 16, no. 2, 2016, pp. 1064 – 1068. DOI 10.1021/acs.nanolett.5b04203

  16. Bushmaker A.W., Oklejas V., Walker D., et al.: Single-ion adsorption and switching in carbon nanotubes. Nature Communications, Vol. 7, 2016, Article # 10475. DOI 10.1038/ncomms10475

  17. Kumar Vobulapuram Ramesh, Kaushik Brajesh Kumar, Patnaik Amalendu: Improved crosstalk noise modeling of MWCNT interconnects using FDTD technique. Microelectronics J., Vol. 46, no. 12, Part: A, 2015, pp. 1263 – 1268. DOI 10.1016/j.mejo.2015.10.009

  18. Rai Mayank Kumar, Sarkar Sankar: Temperature dependant crosstalk analysis in coupled single-walled carbon nanotube (SWCNT) bundle interconnects. Int. J. of Circuit Theory and Applications, Vol. 43, no. 10, 2015, pp. 1367 – 1378. DOI 10.1002/cta.2013

  19. Kayyalha Morteza, Chen Yong P.: Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates. Applied Physics Lett., Vol. 107, no. 11, 2015, Article # 113101. DOI 10.1063/1.4930992

  20. Qian Libo, Xia Yinshui, Liang Guojian: Study on crosstalk characteristic of carbon nanotube through silicon vias for three dimensional integration. Microelectronics J., Vol. 46, no. 7, 2015, pp. 572 – 580. DOI 10.1016/j.mejo.2015.04.002

  21. Hills Gage, Zhang Jie, Shulaker Max Marcel, et al.: Rapid Co-Optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations. IEEE Trans on CAD of Integrated Circuits and Systems, Vol. 34, no. 7, 2015, pp. 1082 – 1095. DOI 10.1109/TCAD.2015.2415492

  22. Lekas M., Sunwoo Lee, Wujoon Cha, Hone J., Shepard K.: Noise Modeling of Graphene Resonant Channel Transistors. IEEE Trans on ED, Vol. 62, no. 4, 2015, pp.1276 – 1283. DOI 10.1109/TED.2015.2405540

  23. Priyanka Saha, Amit Jain, Subir Kumar Sarkar: Analytical modeling of read noise margin of a CNFET based 6T SRAM cell. Analog Integrated Circuits & Signal Processing, Vol. 83, no. 3, 2015, pp. 369 – 376. DOI 10.1007/s10470-015-0523-1

  24. Liangliang Chen, Ning Xi, Zhanxin Zhou, Bo Song, Yongliang Yang, Zhiyong Sun, Yujie Hao: Parasitic capacitive coupling analysis of carbon nanotube based infrared detector. IEEE 15th Int. Conf. on Nanotechnology (IEEE-NANO), 2015, pp. 1226 – 1230. DOI 10.1109/NANO.2015.7388850

  25. Wahab M.A., Alam M.A.: Implications of Electrical Crosstalk for High Density Aligned Array of Single-Wall Carbon Nanotubes. IEEE Trans on ED, Vol. 61, no.12, 2014, pp. 4273 – 4281. DOI 10.1109/TED.2014.2360869

  26. Fouladi A. Ahmadi, Vahedi Javad: Quantum interference effects on the noise power in the CNT/aGNR/CNT junction. Physica Scripta, Vol. 89, no. 12, 2014, Article # 125802. DOI 10.1088/0031-8949/89/12/125802

  27. Jhang Sung Ho: Analysis of random telegraph noise observed in semiconducting carbon nanotube quantum dots. Synthetic Metals, Vol. 198, 2014, pp. 118 – 121. DOI 10.1016/j.synthmet.2014.09.032

  28. Fobelets K., Meghani M., Li C.: Influence of Minority Carrier Gas Donors on Low-Frequency Noise in Silicon Nanowires. IEEE Trans on Nanotechnology, Vol. 13, no. 6, 2014, pp. 1176 – 1180. DOI 10.1109/TNANO.2014.2349738

  29. Tanaka Tomo, Sano Eiichi: Low-frequency noise in carbon nanotube network thin-film transistors. Japanese Journal of Applied Physics, Vol. 53, no. 9, 2014, Article # 090302. DOI 10.7567/JJAP.53.090302

  30. Sharf Tal, Wang Neng-Ping, Kevek Joshua W., et al.: Single Electron Charge Sensitivity of Liquid-Gated Carbon Nanotube Transistors. NANO Lett., Vol. 14, no. 9, 2014, pp. 4925 – 4930. DOI 10.1021/nl403983u

  31. Liang Shibo, Zhang Zhiyong, Si Jia, et al.: High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide. Applied Physics Lett., Vol. 105, no. 6, 2014, Article # 063101. DOI 10.1063/1.4892918

  32. Rai Mayank Kumar, Khanna Rajesh, Sarkar Sankar: Crosstalk Analysis in CNT Bundle Interconnects for VLSI Application. IEE J. Trans on Electrical & Electronic Engineering, Vol. 9, no. 4, 2014, pp. 391 – 397. DOI 10.1002/tee.21984

  33. Chen Hai Yang: Scattering theory of electron transport in single layer graphene with a time-periodic potential. Physics Lett. A, Vol. 378, no. 30-31, 2014, pp. 2226 – 2229. DOI 10.1016/j.physleta.2014.05.004

  34. Laitinen Antti, Oksanen Mika, Fay Aurelien, et al.: Electron-Phonon Coupling in Suspended Graphene: Supercollisions by Ripples. NANO Lett., Vol. 14, no. 6, 2014, pp. 3009 – 3013. DOI 10.1021/nl404258a

  35. Khavasi A., Rejaei B.: Analytical Modeling of Graphene Ribbons as Optical Circuit Elements. IEEE Journal of Quantum Electronics, Vol. 50, no. 6, 2014, pp. 397 – 403. DOI 10.1109/JQE.2014.2316133

  36. Sano Eiichi, Tanaka Tomo: A simple drain current model for single-walled carbon nanotube network thin-film transistors. J. of Applied Physics, Vol. 115, no. 15, 2014, Article # 154507. DOI 10.1063/1.4871775

  37. Wang Huiliang, Wei Peng, Li Yaoxuan, et al.: Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits. PNAS, Vol. 111, no. 13, 2014, pp. 4776 – 4781. DOI 10.1073/pnas.1320045111

  38. Shin Jung Hwal, Kim Guk Bae, Lee Eun Joo, et al.: Carbon- Nanotube- Modified Electrodes for Highly Efficient Acute Neural Recording. Advanced Healthcare Materials, Vol. 3, no. 2, 2014, pp. 245 – 252. DOI 10.1002/adhm.201300183

  39. Martin Landauer Gerhard, Luis Gonzalez Jose: Radio-Frequency Performance of Carbon Nanotube-Based Devices and Circuits Considering Noise and Process Variation. IEEE Trans on Nanotechnology, Vol. 13, no. 2, 2014, pp. 228237. DOI 10.1109/TNANO.2014.2298094

  40. Sydoruk V. A., Goss K., Meyer C., Petrychuk M. V., Danilchenko B. A., Weber P., Stampfer C., Li J., Vitusevich, S. A.: Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation. Nanotechnology, Vol. 25, no. 3, Article # 035703, 2014, DOI 10.1088/0957-4484/25/3/035703

  41. Hossain Z. Md., Rumyantsev S., Shur M.S., Balandin A.A: Reduction of 1/f noise in graphene after electron-beam irradiation. Applied Physics Letters, Vol. 102, no. 15, 2013, Article # 153512. DOI 10.1063/1.4802759

  42. Rengel R., Martín M. J.: Diffusion coefficient, correlation function and power spectral density of velocity fluctuations in monolayer graphene. Journal of Applied Physics, Vol. 114, no. 14, 2013, pp 143702 – 143702-9. DOI 10.1063/1.4824182

  43. Subash S, Kolar J, Chowdhury M.: A New Spatially Rearranged Bundle of Mixed Carbon Nanotubes as VLSI Interconnection. IEEE Trans. on Nanotechnology, Vol. 12, no. 1, 2013, pp 3 – 12. DOI 10.1109/TNAno. 2011.2159014

  44. Huang Huaping, Liu De, Zhang Hongmei, Kong Xiaojun: Electronic transport and shot noise in Thue-Morse sequence graphene superlattice. Journal of Applied Physics, Vol. 113, no. 4, 2013, pp 043702 – 043702-6. DOI 10.1063/1.4788676

  45. Zhuang Jia Ning, Wang Jian: Conductance fluctuation and shot noise in disordered graphene systems, a perturbation expansion approach. Journal of Applied Physics, Vol. 114, no. 6, 2013, pp. 063708 – 063708-8. DOI 10.1063/1.4817885

  46. V. A. Sydoruk, M. V. Petrychuk, A. Ural, G. Bosman, A. Offenhäusser, S. A. Vitusevich : Noise spectroscopy of transport properties in carbon nanotube field-effect transistors. Carbon, Vol. 53, 2013, pp. 252 – 259. DOI 10.1016/j.carbon.2012.10.056

  47. V. A. Sydoruk, M. V. Petrychuk, A. Ural, G. Bosman, A. Offenhäusser, S. A. Vitusevich : Noise spectroscopy of transport properties in carbon nanotube field-effect transistors. Carbon, Vol. 53, 2013, pp. 252 – 259. DOI 10.1016/j.carbon.2012.10.056

  48. Kawahara T., Yamaguchi S., Ohno Y., Maehashi K., Matsumoto K., Mizutani S., Itaka K.: Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy. Applied Surface Science, Vol. 267, Feb. 15 2013, pp. 101 – 105. DOI 10.1016/j.apsusc.2012.08.003

  49. Sharf T., Kevek J. W., DeBorde T., Jenna L. Wardini, Ethan D. Minot  : Origins of Charge Noise in Carbon Nanotube Field-Effect Transistor Biosensors. NANO Lett.  Vol. 12, no. 12, 2012, pp. 6380 – 6384. DOI 10.1021/nl303651t

  50. Kawahara T., Yamaguchi S., Ohno Y., Maehashi K., Matsumoto K., Mizutani S., Itaka K.: Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy. Applied Surface Science, Vol. 267, Feb. 15 2013, pp. 101 – 105. DOI 10.1016/j.apsusc.2012.08.003

  51. Kim Chur, Jung Kwangyun, Kieu Khanh, Jungwon Kim: Low timing jitter and intensity noise from a soliton Er-fiber laser mode-locked by a fiber taper carbon nanotube saturable absorber. Optics Express, Vol. 20, no. 28, 2012, pp. 29524 – 29530. DOI 10.1364/OE.20.029524

  52. Sassine G., Martinez F., El Khoury M., Pascal F., Hoffmann A.: Measurements and Simulations of Surfactant's Impact on the Conductivity and the 1/f Noise in Percolation Carbon Nanotube Networks. IEEE Trans on ED, Vol. 59, no. 10, 2012,  pp. 2803 – 2808. DOI 10.1109/TED.2012.2210046

  53. Lovat G.: Equivalent Circuit for Electromagnetic Interaction and Transmission Through Graphene Sheets. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 101 – 109. DOI 10.1109/TEMC.2011.2169072

  54. D'Amore M., D'Aloia A.G., Sarto M.S., Tamburrano A.: Near Field Radiated From Carbon Nanotube Bundles. IEEE Trans on EMC, Vol. 54, no. 5, 2012, pp. 998 – 1005. DOI 10.1109/TEMC.2012.2196045

  55. Jin-Bong Kim, Joon-Hyung Byun: Salisbury Screen Absorbers of Dielectric Lossy Sheets of Carbon Nanocomposite Laminates. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 37 – 42. DOI 10.1109/TEMC.2011.2172983

  56. Stievano I.S., Manfredi P., Canavero F.G.: Carbon Nanotube Interconnects: Process Variation via Polynomial Chaos. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 140 – 148. DOI 10.1109/TEMC.2011.2171490

  57. Quiévy, N., Bollen P., Thomassin J., Detrembleur C., Pardoen T., Bailly C., Huynen I.: Electromagnetic Absorption Properties of Carbon Nanotube Nanocomposite Foam Filling Honeycomb Waveguide Structures. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 43 – 51. DOI 10.1109/TEMC.2011.2179928

  58. Jiang-Peng Cui, Wen-Sheng Zhao, Wen-Yan Yin, Jun Hu: Signal Transmission Analysis of Multilayer Graphene Nano-Ribbon (MLGNR) Interconnects. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 126 – 132. DOI 10.1109/TEMC.2011.2172947

  59. Wen-Sheng Zhao, Wen-Yan Yin, Yong-Xin Guo: Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 149 – 157. DOI 10.1109/TEMC.2011.2167336

  60. Chiariello A.G., Maffucci A., Miano G.: Electrical Modeling of Carbon Nanotube Vias. IEEE Trans on EMC, Vol. 54, no. 1, 2012, pp. 158 – 166. DOI 10.1109/TEMC.2011.2180024

  61. Maehashi K., Kishimoto T., Ohno Y., Inoue K., Matsumoto K.: Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 30, no. 3, 2012, pp. 03D108 – 03D108-4. DOI 10.1116/1.3697527

  62. Gulbahar B., Akan O.B.: A Communication Theoretical Modeling of Single-Walled Carbon Nanotube Optical Nanoreceivers and Broadcast Power Allocation. IEEE Trans on Nanotechnology, Vol. 11, no. 2, 2012, pp. 395 – 405. DOI 10.1109/TNANO.2011.2177500

  63. Bartsch S. T., Rusu A., Ionescu A. M.: Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor. Applied Physics Letters, Vol. 101, no. 15, 2012, pp. 153116 – 153116-5. DOI 10.1063/1.4758991

  64. Landauer G. M., Gonzalez J. L.: Carbon nanotube FET process variability and noise model for radiofrequency investigations. IEEE Conf. on Nanotechnology (IEEE-NANO), 2012, pp. 1 – 5. DOI 10.1109/NANO.2012.6321963

  65. Pribat D., Bondavalli P.: Thin-Film Transistors and Circuits Based on Carbon Nanotubes. Journal of Display Technology, Vol. 8, no. 1, 2012, pp. 54 – 60. DOI 10.1109/JDT.2011.2162817

  66. Liu Guanxiong, Rumyantsev S., Shur M., Balandin A. A. : Graphene thickness-graded transistors with reduced electronic noise. Applied Physics Letters , Vol. 100, no. 3, 2012, pp. 033103 – 033103-3. DOI 10.1063/1.3676277

  67. Moon J. S., Antcliffe M., Seo H. C., Lin S. C., Schmitz A., Milosavljevic I., McCalla K., Wong D., Gaskill D. K., Campbell P. M., Lee K.-M., Asbeck P.: Graphene review: An emerging RF technology. IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012, pp. 199 – 202. DOI 10.1109/SiRF.2012.6160170

  68. Majumder M.K., Pandya N.D., Kaushik B.K., Manhas S.K.: Dynamic crosstalk effect in mixed CNT bundle interconnects. Electronics Lett., Vol. 48, no. 7, 2012, pp. 384 – 385. DOI 10.1049/el.2012.0536

  69. Yanbin An, H. Rao, G. Bosman, Ant Ural : Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions. Appl. Phys. Lett., Vol. 100, no 21, 2012, pp 213102 (4 pages) http://dx.doi.org/10.1063/1.4719094

  70. Sun S., Ang L. K.: Shot noise of low energy electron field emission due to Klein tunneling. Journal of Applied Physics, Vol. 112, no. 1, 2012, pp. 016104 – 016104-3. DOI 10.1063/1.4733349

  71. Hakamata Y., Ohno Y., Maehashi K., Koichi Inoue, Kazuhiko Matsumoto : Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks. Japanese Journal of Applied Physics, Vol. 50, no. 6, 2011, Special Issue SI, Article # 06GE03, Part 2 DOI 10.1143/JJAP.50.06GE03

  72. Stadler A. Witold, Zawislak Zbigniew, Sloma Marcin, Jakubowska M.: Noise properties of CNT-based polymer resistors. (polish) Przeglad Elektrotechniczny, Vol. 87, no. 10, 2011, pp. 52 – 55.

  73. Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto: External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor. Applied Phys. Express, Vol. 4, no. 4, 2011, DOI 10.1143/APEX.4.045102

  74. Ferranti F., Antonini G., Dhaene T., Knockaert L., Orlandi A.: Compact and Accurate Models of Large Single-Wall Carbon-Nanotube Interconnects. IEEE Trans on EMC, Vol. 53, no. 4, 2011, pp. 1025 – 1033. DOI 10.1109/TEMC.2011.2159207

  75. Pable S.D., Hasan M., Kafeel M.A.: Performance Analysis of Ultra Low-Power Mixed CNT Interconnects for Scaled Technology. Int. Symp. on Electronic System Design (ISED), 2011, pp. 285 – 289. DOI 10.1109/ISED.2011.74

  76. Wen-Yan Yin, Wen-Sheng Zhao: Modeling of carbon nanotube (CNT) interconnects. 15th IEEE Workshop on Signal Propagation on Interconnects (SPI), 2011, pp. 79 – 82. DOI 10.1109/SPI.2011.5898845

  77. S. Krompiewski : Electronic transport through side-contacted graphene nanoribbons: effects of overlap, aspect ratio and orientation. Nanotechnology, Vol. 22, no 44, 2011, pp 445201 (6 pages) doi:10.1088/0957-4484/22/44/445201

  78. A. D. Franklin, S.-J. Han, A. A. Bol, W. Haensch : Effects of nanoscale contacts to graphene. IEEE Electron Device Lett., Vol. 32, no. 8, pp. 1035–1037, 2011. DOI 10.1109/LED.2011.2158058

  79. J. S. Moon, D. Curtis, D. Zehnder, S. Kim, D. K. Gaskill, G. G. Jernigan, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, K.-M. Lee, P. Asbeck : Low-phase-noise graphene FETs in ambipolar RF applications. IEEE Electron Device Lett., Vol. 32, no. 3, pp. 270 – 272, Mar. 2011. DOI 10.1109/LED.2010.2100074

  80. Moon Gyu Sung, Hyungwoo Lee, Kwang Heo, Kyung-Eun Byun, Taekyeong Kim, David H. Seo, Sunae Seo, Seunghun Hong : Scanning Noise Microscopy on Graphene Devices. ACS Nano, Vol. 5, no 11, 2011, pp 8620 – 8628. DOI 10.1021/nn202135g

  81. Yan Zhang, Emilio E. Mendez, Xu Du : Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors. ACS Nano, Vol. 5, no 10, 2011, pp 8124 – 8130. DOI 10.1021/nn202749z

  82. Atindra Nath Pal, Subhamoy Ghatak, Vidya Kochat, E. S. Sneha, Arjun Sampathkumar, Srinivasan Raghavan, Arindam Ghosh : Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion. ACS Nano, Vol. 5, no 3, 2011, pp 2075 – 2081. DOI 10.1021/nn103273n

  83. Rui Zhu, Maoli Lai : Pumped shot noise in adiabatically modulated graphene-based double-barrier structures. J. Phys.: Condens. Matter, Vol. 23, no 45, 2011, pp. 455302 (7 pages). Doi:10.1088/0953-8984/23/45/455302

  84. Yu-Xian Li, Long-Fei Xu : Shot noise suppression in a series graphene tunnel barrier structure. Solid State Communications, Vol. 151, no 3, 2011, pp. 219 – 222. DOI 10.1016/j.ssc.2010.11.029

  85. Xiao-Xiao Guo, De Liu, and Yu-Xian Li : Conductance and shot noise in graphene superlattice. Applied Physics Letters, Vol. 98, no 24, 2011, pp 242101 (3 pages) DOI 10.1063/1.3599447

  86. Guo Xiao-Xiao, Liu De, Li Yu-Xian: Conductance and shot noise in graphene superlattice. Applied Physics Letters, Vol. 98, no. 24, 2011, pp. 242101 – 242101-3. DOI 10.1063/1.3599447

  87. Iannaccone G., Betti A., Fiori G.: Noise in graphene and carbon nanotube devices. 21st Int. Conf on Noise and Fluctuations (ICNF), 2011, pp. 360 – 363. DOI 10.1109/ICNF.2011.5994343

  88. Gasparyan F.V., Poghossian A., Vitusevich S. A., Petrychuk M.V., Sydoruk V.A., Siqueira J.R., Oliveira O.N., Offenhausser A., Schoning M.J.: Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon- Nanotube Multilayers. IEEE Sensors Journal, Vol. 11, no 1, 2011, pp 142 – 149. DOI 10.1109/JSEN.2010.2052355

  89. Jamal O., Naeemi A.: Ultralow-Power Single-Wall Carbon Nanotube Interconnects for Subthreshold Circuits. IEEE Trans on Nanotechnology, Vol 10, no 1, 2011, pp 99 – 101. DOI 10.1109/TNAno. 2010.2095428

  90. Sakalas P., Schroter M., Bolter M., Claus M., Mothes S., Wang D.: High frequency noise in manufacturable carbon nanotube transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp. 372 – 375. DOI 10.1109/ICNF.2011.5994346

  91. Liu L., Kong L., Yin W., Matitsine S. S.: Characterization of Single- and Multiwalled Carbon Nanotube Composites for Electromagnetic Shielding and Tunable Applications. IEEE Trans. on Electromagnetic Compatibility, Vol. 53, no. 4, 2011, pp. 943 – 949. DOI 10.1109/TEMC.2011.2159798

  92. Sydoruk V.A., Petrychuk M.V., Ural A., Bosman G., Offenhausser A., Vitusevich S.A.: Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 238 – 241. DOI 10.1109/ICNF.2011.5994312

  93. Iannaccone G., Betti A., Fiori G.: Noise in graphene and carbon nanotube devices. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 360 – 363. DOI 10.1109/ICNF.2011.5994343

  94. Kawahara T., Yamaguchi S., Maehashi K., Ohno Y., Matsumoto K., Mizutani S.: Gate voltage control of stochastic resonance in carbon nanotube field effect transistors. 21st Int. Conf. on Noise and Fluctuations (ICNF), 2011, pp 364 – 367. DOI 10.1109/ICNF.2011.5994344

  95. Joo Min-Kyu, Kang Pilsoo, Kim Yongha, Kim Gyu-Tae, Kim Sangtae: A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices. Review of Scientific Instruments, Vol. 82, no. 3, 2011, pp. 034702 – 034702-5. DOI 10.1063/1.3553208

  96. Wei Wang, Zhiyuan Yu, Ken Choi: High SNM 6T CNFET SRAM cell design considering nanotube diameter and transistor ratio. IEEE Int. Conf. on Electro/Information Technology (EIT), 2011, pp. 1 – 4. DOI 10.1109/EIT.2011.5978618

  97. Yang Xuebei, Liu Guanxiong, Balandin A. A., Mohanram Kartik: Triple-Mode Single-Transistor Graphene Amplifier and Its Applications. ACS Nano, Vol. 4, no. 10, 2010, pp. 55325538. DOI 10.1021/nn1021583

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