|
Acronym |
Meaning |
|
3D-IDC |
Three-Dimensional
Interdigital Capacitor |
|
AC |
Alternating
Current |
|
ADC |
Analog-to-Digital
Converter |
|
ADMM |
Alternating
Direction Method of Multipliers |
|
AI-EBG |
Alternating
Impedance Electromagnetic Bandgap |
|
ANN |
Artificial Neural
Network |
|
ANSI |
The
American National Standard Institute |
|
APD |
Avalanche
PhotoDiode |
|
BEOL |
Back-end
of line |
|
BER |
Bit
Error Rate |
|
BiCMOS |
Bipolar
& CMOS |
|
CAPD |
Conventional
Avalanche PhotoDiode |
|
CCI |
Co-Channel
Interference |
|
CMD |
Charge
Device Model
(relating to ESD) |
|
CMD |
Code
Division Multiplexing
(relating to communications) |
|
CMOS |
Complementary
Metal Oxide Semiconductor |
|
CMR |
Common
Mode Rejection |
|
CMUT |
Capacitive
Micromachined Ultrasonic Transducer |
|
CNT |
Carbon
NanoTube |
|
CPPM |
Chaotic Pulse Position
Modulation |
|
CSI |
Channel State
Information |
|
DAC |
Digital-to-Analog
Converter |
|
DC |
Direct
Current |
|
DN |
Digital
Number (analog-to-digital converter count) |
|
DSNU
[Pixel]
|
Dark
Signal Non-Uniformity |
|
EBG |
Electromagnetic BandGap |
|
EMC |
Electromagnetic
Compatibility |
|
EMI |
Electromagnetic
Interference |
|
EMP |
Electromagnetic
Pulse |
|
ESD |
Electrostatic
Discharge |
|
EOS/ESD |
Electrical
Overstress/Electrostatic Discharge |
|
ETSOI |
Extreme
Thin Silicon On Insulator |
|
FDTD |
Finite-Difference
Time-Domain |
|
FFT |
Fast
Fourier Transform |
|
FIR
[filter] |
Finite
Impulse Response filter |
|
FSK |
Frequency
Shift Keying |
|
GaAs |
Gallium-Arsenide |
|
HBT |
Heterojunction
Bipolar Transistor |
|
HEMT |
High
Electron Mobility Transistor |
|
ICI |
InterCell
Interference |
|
IGFET |
Insulated
Gate Field-Effect Transistor |
|
IMS |
Insulated Metal
Substrate |
|
InP |
Indium-Phosphide |
|
ISM (equipment) |
Industrial,
Scientific and Medical (equipment) |
|
JFET |
Junction
Field-Effect Transistor |
|
LCMV |
Linearly
Constrained Minimum Variance |
|
LED |
Light
Emitting Diode |
|
LTCC |
Low-Temperature Co-fire
Ceramic |
|
MCBF |
Multicell
Coordinated BeamForming |
|
MESFET |
Metal-Semiconductor
Field-Effect Transistor |
|
MIM (capacitor) |
Metal-Insulator-Metal
(capacitor) |
|
MIMIC |
Monolithic
Microwave Integrated Circuit |
|
MIMO |
Multiple-Input
Multiple-Output |
|
MISO |
Multiple-Input
Single-Output |
|
MLCC |
Multi
Layerd Ceramic Capacitor |
|
MODFET |
Modulation-Doped
Field-Effect Transistor |
|
MOSFET |
Metal
Oxide Semiconductor Field Effect Transistor |
|
MPF |
Microwave Photonic
Filter |
|
MTCMOS |
Multi-Threshold
CMOS |
|
MuGFET |
Multiple
Gate Field-Effect Transistor
(It
refers to a MOSFET) |
|
MVDR |
Minimum
Variance Distorsionless Response |
|
MWNT |
Multiwalled
carbon NanoTube |
|
NEP |
Noise
Equivalent Power |
|
NWFET |
Nanowire
Field-Effect Transistor |
|
PCB |
Printed
Circuit Board |
|
PCPL |
Photonic Crystal
Power/Ground Layer |
|
PDN |
Power Delivery
Network |
|
PMT
|
PhotoMultiplier
Tube |
|
PoP |
Package on Package |
|
PRNU
[Pixel]
|
Photo
Response Non-Uniformity |
|
PSD |
Power
Spectral Density |
|
RF |
Radio
Frequency |
|
RMS |
Root
Mean Square |
|
RTS
|
Random
Telegraph Signal |
|
SAPD |
Superlattice
Avalanche PhotoDiode |
|
SAW |
Surface
Acoustic Wave |
|
SCR |
Silicon-Controlled
Rectifier |
|
SEP |
Symbol Error
Probability |
|
SGT |
Source-Gated
Transistor |
|
SI |
Self-Interference
(equally,
Signal Integrity) |
|
SINR |
Signal-to-Interference-plus-Noise
Ratio |
|
SiP |
System
In Package |
|
SIR |
Signal-to-Interference
Ratio |
|
SIW |
Substrate
Integrated Waveguide |
|
SMT |
Surface Mount
Technology |
|
SMPS |
Switched
Mode Power Supply |
|
SNR |
Signal
to Noise Ratio |
|
SOA |
Semiconductor
Optical Amplifier |
|
SOC |
System
On Chip |
|
SOI |
Silicon
On Insulator |
|
SSB |
Single
Sideband |
|
SSN |
Simultaneous
Switching Noise |
|
SWNT |
Single-Walled
carbon NanoTube |
|
TEM |
Transverse
Electromagnetic Mode |
|
TSV |
Through Silicon
Via |
|
VECSEL |
Vertical Cavity
Surface Emiting Laser |
|
VSWR |
Voltage
Standing Wave Ratio |
